POWER PHONE Search Results

POWER PHONE Result Highlights (5)

Part	Manufacturer	Description
ISL98611AIIZ-T	Renesas Electronics Corporation	High Efficiency Display Power and LED Driver for Smart Phones
TPD4164F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31
TPD4164K	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30
TPD4163K	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30
TPD4163F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31

POWER PHONE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
DIODE ZENER 3.3V Abstract: vishay crcw0805 SOD-223 SW415-ND 67-1002-1-ND poe pse injector CRCW0805000Z SOD223 151j CAPACITOR MAX5922 Text: Maxim > App Notes > HOT-SWAP AND POWER SWITCHING CIRCUITS Keywords: PoE, power-over-ethernet, IEEE 802.3af, power-over-lan, power-sourcing-equipment, PSE, PD, Power Device, IP Phone, Wireless LAN Jun 07, 2005 APPLICATION NOTE 3507 IEEE 802.3af-Compliant Single-Port, Power-Sourcing-Equipment Application	Original	PDF	B3S-1000 SW415-ND com/an3507 MAX5922: AN3507, APP3507, Appnote3507, DIODE ZENER 3.3V vishay crcw0805 SOD-223 SW415-ND 67-1002-1-ND poe pse injector CRCW0805000Z SOD223 151j CAPACITOR MAX5922
pcf50611 Abstract: handset charger circuit diagram CELL PHONE WALL charger pcf5061 PCF506 Ericsson Battery Backup System Text: Longer battery life and smaller PHONES PCF50611 Highly integrated power management unit for mid-range mobile applications The PCF50611 power management unit PMU provides very efﬁcient power generation and offers real-times power management to reduce power consumption and	Original	PDF	PCF50611 PCF50611 HVQFN52 FLSTN506110109 handset charger circuit diagram CELL PHONE WALL charger pcf5061 PCF506 Ericsson Battery Backup System
bgy284e Abstract: BGY502 BGY288 PHILIPS GSM ic Power Amplifier Module for GSM philips GSM 1800 transceiver pa 900 amplifier UAA3587 Text: BGY284E GSM/GPRS/EDGE Mobile phone RF power amplifier power amplifier module with integrated power control loop Measuring only 80 mm2, the BGY284E is an ultra-small GSM/GPRS/EDGE power amplifier module with an accurate, integrated power control loop. Combined with	Original	PDF	BGY284E UAA3587E BGY284E, 1800/1ly. BGY502 BGY288 PHILIPS GSM ic Power Amplifier Module for GSM philips GSM 1800 transceiver pa 900 amplifier UAA3587
flyback transformer high voltage Abstract: switching power supply transformer switching power supply transformer construction switch mode power supply flyback transformer hv flyback transformer HV Flyback TRANSFORMERS line output transformer dc line EMI filter transformer Text: Power Integrations High-Voltage Analog ICs Reference Design Kit RDK-83 To Speed Power Supply Design 1.6W Cordless Phone Adapter (Power Supply) with 10 kV surge withstand Power Integrations (PI) reference design kit, RDK-83, contains a jump-start power supply design	Original	PDF	RDK-83) RDK-83, RDK-83 210mA 150mW 265VAC RDK-83: com/PDFFiles/rdr83 flyback transformer high voltage switching power supply transformer switching power supply transformer construction switch mode power supply flyback transformer hv flyback transformer HV Flyback TRANSFORMERS line output transformer dc line EMI filter transformer
Untitled Abstract: No abstract text available Text: BH6178GUL \| Power Management IC Series for Mobile Phones \| Power Management IC. Page 1 of 2 Site Search 6 Site Map HOME, Products > ICs > Power Management ICs > Power Management IC Series for Mobile Phones > BH6178GUL ICs EEPROMs Data Sheets High-efficiency Power Management IC	Original	PDF	BH6178GUL BH6178GUL phone/high-efficiency/bh6178gul/
2.4GHz Cordless Phone circuit diagram Abstract: 2.4GHz SiGe Linear Power Amplifier RF Power detector SE2522L SE2522L-EK1 SE2522L-R Text: SE2522L RangeCharger 2.4 GHz Power Amplifier And Power Detector IC Preliminary Information Applications Product Description IEEE 802.11b DSSS radios, Wireless LAN 2.4GHz cordless phones, ISM radios Features Integrated power detector circuit High linear output power for IEEE802.11b:	Original	PDF	SE2522L IEEE802 20dBm, 30dBc, 50dBc 110mA 23dBm, 140mA SE2522L 18-DST-01 2.4GHz Cordless Phone circuit diagram 2.4GHz SiGe Linear Power Amplifier RF Power detector SE2522L-EK1 SE2522L-R
mark e2 Abstract: BH6053GU BH6951GU D312C Text: TECHNICAL NOTE Power Management IC Series for Mobile Phones High-efficiency Power Management IC BH6053GU, BH6951GU, BH6952GU zDescription The High-Efficiency Power Management IC is considered to be the best power supply for CPU application. It integrates a	Original	PDF	BH6053GU, BH6951GU, BH6952GU mark e2 BH6053GU BH6951GU D312C
AAAA Abstract: p0603 CGY96 marking aaa aaa marking code Text: GaAs MMIC CGY96 Preliminary Datasheet Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V *Overall power added efficiency 50 %	Original	PDF	CGY96 35dBm) AAAA p0603 CGY96 marking aaa aaa marking code
NE5520379A Abstract: NE5520379A-T1 NE5520379A-T1A VP215 ldmos nec Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier	Original	PDF	NE5520379A NE5520379A NE5520379A-T1 NE5520379A-T1A VP215 ldmos nec
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier	Original	PDF	NE5520379A NE5520379A
4012 Abstract: No abstract text available Text: RL-4012 SHIELDED SMD POWER INDUCTOR DESCRIPTION FEATURES & APPLICATIONS • Shielded SMD Power Inductor • Surface mount power inductors in a low profile • Excellent as a power inductor used in notebook computers, PDAs, cell phones, step-up or step-down converters, and	Original	PDF	RL-4012 4012
NE5520379A Abstract: No abstract text available Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier	Original	PDF	NE5520379A NE5520379A
MAX2235 Abstract: MAX2240 MAX2264 MAX2430 MAX2601 MAX2602 TSSOP-EP max2282 UltraChip max2281 Text: WIRELESS, RF, AND CABLE Nov 01, 2000 Maxim Wireless/RF Power Amplifier Selector Guide An overview of Maxim's RF power amplifier PA products targeted towards cellular, PCS, 802.11b, cordless phone and Bluetooth applications. Table compares operating voltage, supply current, output power, package, power	Original	PDF	MAX2240 MAX2264/MAX2265 MAX2267/MAX2268/MAX2269 MAX2320/Mpin ANSAQ101 MAX2240: MAX2251: MAX2264: MAX2265: MAX2267: MAX2235 MAX2240 MAX2264 MAX2430 MAX2601 MAX2602 TSSOP-EP max2282 UltraChip max2281
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier	Original	PDF	NE5520379A NE5520379A

LD2R2NC Abstract: CDRH2D18 LD Text: POWER INDUCTORS POWER INDUCTORS CDRH2D18/LD M OUTLINE It is a power inductor which corresponds to the power supply application for both laptop PC HDD and W-CDMA cellular phone. Thinner core diameter and thicker wire diameter enables low D.C.R. K DIMENSIONS mm	Original	PDF	CDRH2D18/LD 100kHz) CDRH2D18/LD-2R2NC CDRH2D18/LD-3R3NC CDRH2D18/LD-4R7NC CDRH2D18/LD-6R8NC CDRH2D18/L7NC CDRH2D18/LD-100NC CDRH2D18/LD-150NC LD2R2NC CDRH2D18 LD
Untitled Abstract: No abstract text available Text: RL-4012 SHIELDED SMD POWER INDUCTOR DESCRIPTION FEATURES & APPLICATIONS • Shielded SMD Power Inductor • Surface mount power inductors in a low profile • Excellent as a power inductor used in notebook computers, smartphones, cell phones, step-up or step-down converters,	Original	PDF	RL-4012
BGY284 Abstract: BGY502 bgy284e Text: BGY284 GSM quad-band amplifier Ultra-small power amplifier module with integrated power control loop Measuring only 64 mm2, the BGY284 is an ultra-small, GSM power-amplifier module with an integrated power control loop. Designed for 850, 900, 1800 and 1900 MHz GSM phones,	Original	PDF	BGY284 BGY284, BGY502 bgy284e
rf detector diode Abstract: cfdb DIODE RF DETECTOR LMV248 LMV248LQ LMV248LQX RF Directional Couplers Text: LMV248 Dual Band GSM Power Controller General Description Features The LMV248 RF power amplifier controller allows simple implementation of transmit power control loops in GSM and DCS/PCS and mobile phones. The LMV248 supports, GaAs HBT and bipolar RF power amplifiers. The device operates	Original	PDF	LMV248 LMV248 rf detector diode cfdb DIODE RF DETECTOR LMV248LQ LMV248LQX RF Directional Couplers
gsm signal amplifier circuit diagram Abstract: IC internal structure rf detector diodes Text: LMV248 Dual Band GSM Power Controller General Description Features The LMV248 RF power amplifier controller allows simple implementation of transmit power control loops in GSM and DCS/PCS and mobile phones. The LMV248 supports, GaAs HBT and bipolar RF power amplifiers. The device operates	Original	PDF	LMV248 gsm signal amplifier circuit diagram IC internal structure rf detector diodes
NCP2890FCT1 Abstract: NCP2890DMR2 CRCW0805 NCP2890 TELEGARTNER CONNECTOR 499E Text: NCP2890 1.0 Watt Audio Power Amplifier The NCP2890 is an audio power amplifier designed for portable communication device applications such as mobile phone applications. The NCP2890 is capable of delivering 1.0 W of continuous average power to an 8.0 W load from a 5.0 V power	Original	PDF	NCP2890 NCP2890 NCP289 r14525 NCP2890/D NCP2890FCT1 NCP2890DMR2 CRCW0805 TELEGARTNER CONNECTOR 499E
siemens CAPACITOR Abstract: siemens inductor ACP885 transistor 835 "1u0 1206" D 835 680R BAS40-04W BC848B BCP72 Text: CGY 0819 GaAs MMIC l l l l l l Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones Dual band operation 31.5 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Two independent amplifier chains Power ramp control	Original	PDF	Q62702G0076 siemens CAPACITOR siemens inductor ACP885 transistor 835 "1u0 1206" D 835 680R BAS40-04W BC848B BCP72
varicap diodes Abstract: BIPOLAR TRANSISTOR dual gate mosfet in vhf amplifier hitachi SAW Filter gsm module with microcontroller p channel mosfet Transistors mosfet p channel Mosfet transistor hitachi Low frequency power transistor vhf fet lna Text: AMPS Cellular Phone RF Power Amplifier M odules For PA PF0032 Power Module for AMPS Mobile PF0040 Power Module for AMPS Mobile PF0042 Power Module for EAMPS Mobile PF0045A Power Module for AMPS Handheld PF0065 Power Module for AMPS Handheld PF0065A Power Module for AMPS Handheld	OCR Scan	PDF	PF0032 PF0040 PF0042 PF0045A PF0065 PF0065A HWCA602 HWCB602 HWCA606 HWCB606 varicap diodes BIPOLAR TRANSISTOR dual gate mosfet in vhf amplifier hitachi SAW Filter gsm module with microcontroller p channel mosfet Transistors mosfet p channel Mosfet transistor hitachi Low frequency power transistor vhf fet lna
Untitled Abstract: No abstract text available Text: SIEMENS GaAs MMIC CGY96 Preliminary Datasheet Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50 % Fully integrated 3 stage amplifier Single supply operation Power ramp control *lnput matched to 50 ohms, simple output match	OCR Scan	PDF	CGY96 35dBm)
GY81 Abstract: c.d.m. technology avx Text: SIEMENS CGY 81 GaAs MMIC • • • • • Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones 31 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control	OCR Scan	PDF	627002G GY81 c.d.m. technology avx

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POWER PHONE Search Results

POWER PHONE Result Highlights (5)

POWER PHONE Datasheets Context Search

DIODE ZENER 3.3V

pcf50611

bgy284e

flyback transformer high voltage

Untitled

2.4GHz Cordless Phone circuit diagram

mark e2

AAAA

NE5520379A

Untitled

4012

NE5520379A

MAX2235

Untitled

LD2R2NC

Untitled

BGY284

rf detector diode

gsm signal amplifier circuit diagram

NCP2890FCT1

siemens CAPACITOR

varicap diodes

Untitled

GY81