HIP4080 amplifier circuit diagram class D
Abstract: class d amplifier schematic hip4080 jfet normally off to220 mosfet L 3055 HIP4080 ITL5-1 dual jfet transistor array AN9404 oscilloscope schematic EAS 200 Switching Power supply with HIP4080A
Text: No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an
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AN9539
HIP2060,
HIP2060
HIP4080 amplifier circuit diagram class D
class d amplifier schematic hip4080
jfet normally off to220
mosfet L 3055
HIP4080
ITL5-1
dual jfet transistor array
AN9404
oscilloscope schematic EAS 200
Switching Power supply with HIP4080A
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class d amplifier schematic hip4080
Abstract: HIP4080 amplifier circuit diagram class D AN9404 AN9539 mosfet L 3055 1350P AN9405 0-60V HIP2060 MO-169AB
Text: TM No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an
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AN9539
HIP2060,
HIP2060
class d amplifier schematic hip4080
HIP4080 amplifier circuit diagram class D
AN9404
AN9539
mosfet L 3055
1350P
AN9405
0-60V
MO-169AB
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class d amplifier schematic hip4080
Abstract: hip4080 h-bridge gate drive schematics circuit HIP4080 amplifier circuit diagram class D oscilloscope schematic EAS 200 lem la 50p mosfet p 3055 RM1S HIP2060 mosfet L 3055 high power fet audio amplifier schematic
Text: Harris Semiconductor No. AN9539 Harris Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an
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AN9539
HIP2060,
HIP2060
1-800-4-HARRIS
class d amplifier schematic hip4080
hip4080 h-bridge gate drive schematics circuit
HIP4080 amplifier circuit diagram class D
oscilloscope schematic EAS 200
lem la 50p
mosfet p 3055
RM1S
mosfet L 3055
high power fet audio amplifier schematic
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bi-directional switches FET
Abstract: bare Die mosfet Bi-Directional P-Channel mosfet R-THETA Bi-Directional P-Channel list of P channel power mosfet so8 footprint bare chip mosfet Power MOSFET Wafer
Text: Flip Chip Power MOSFET: A New Wafer Scale Packaging Technique Aram Arzumanyan, Ritu Sodhi, Dan Kinzer, Hazel Schofield, Tim Sammon International Rectifier Corporation, El Segundo, CA 90245 USA As presented at ISPSD, June 2001 Abstract This paper describes the first flip chip power MOSFET
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ISPSD-99
bi-directional switches FET
bare Die mosfet
Bi-Directional P-Channel mosfet
R-THETA
Bi-Directional P-Channel
list of P channel power mosfet
so8 footprint
bare chip mosfet
Power MOSFET Wafer
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IDM30512CW100 TECHNOLOGIES, INC. Broadband RF Power MOSFET Silicon MOSFET High Power Gain Superior thermal stability The high power transistor part number IDM30512CW100 is designed for VHF/UHF-Band systems operating over the frequency band 30-512
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IDM30512CW100
IDM30512CW100
30-512MHz
400MHz.
2x100mA
IDM30512CW100-REV-NC-DS-REV-B
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IDM500CW120 TECHNOLOGIES, INC. UHF-Band RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM500CW120 is designed for VHF/UHF-Band systems operating at 1-500 MHz. Operating at CW
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IDM500CW120
IDM500CW120
2x100mA
200mA
1ms-10%
D3913-6-10
IDM500CW120-REV-PR1-DS-REV-NC
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Untitled
Abstract: No abstract text available
Text: NCP5338 Integrated Driver and MOSFET The NCP5338 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5338
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NCP5338
NCP5338
NCP5338/D
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QFN40
Abstract: application note gate driver with bootstrap capacitor PGND19
Text: NCP5369 Integrated Driver and MOSFET The NCP5369 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5369
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NCP5369
NCP5369
40-pin
QFN40
NCP5369/D
QFN40
application note gate driver with bootstrap capacitor
PGND19
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Untitled
Abstract: No abstract text available
Text: NCP5369 Integrated Driver and MOSFET The NCP5369 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5369
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NCP5369
NCP5369
NCP5369/D
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ncp53
Abstract: QFN-40
Text: NCP5369 Integrated Driver and MOSFET The NCP5369 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5369
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NCP5369
40-pin
QFN40
485AZ
NCP5369/D
ncp53
QFN-40
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QFN56 footprint
Abstract: bootstrap diode ncp53 NCP5360R
Text: NCP5360R Integrated Driver and MOSFET The NCP5360R integrates a MOSFET driver, high-side MOSFET and low-side MOSFET into a 8mm x 8mm 56-pin QFN package. The driver and MOSFETs have been optimized for high-current DC-DC buck power conversion applications. The NCP5360R integrated
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NCP5360R
56-pin
NCP5360R/D
QFN56 footprint
bootstrap diode
ncp53
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IDM500CW300 TECHNOLOGIES, INC. UHF-Band RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM500CW300 is designed for VHF/UHF-Band systems operating at 1-500 MHz. Operating at CW
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IDM500CW300
IDM500CW300
2x100mA
IDM500CW300-REV-NC-DS-REV-NC
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IDM500CW200 TECHNOLOGIES, INC. UHF-Band RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM500CW200 is designed for VHF/UHF-Band systems operating at 1-500 MHz. Operating at CW
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IDM500CW200
IDM500CW200
2x100mA
IDM500CW200-REV-NC-DS-REV-C
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Untitled
Abstract: No abstract text available
Text: NCP5360R Integrated Driver and MOSFET The NCP5360R integrates a MOSFET driver, high-side MOSFET and low-side MOSFET into a 8mm x 8mm 56-pin QFN package. The driver and MOSFETs have been optimized for high-current DC-DC buck power conversion applications. The NCP5360R integrated
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NCP5360R
NCP5360R
56-pin
NCP5360R/D
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Untitled
Abstract: No abstract text available
Text: NCP5360A Integrated Driver and MOSFET The NCP5360A integrates a MOSFET driver, high-side MOSFET and low-side MOSFET into a 8mm x 8mm 56-pin QFN package. The driver and MOSFETs have been optimized for high-current DC-DC buck power conversion applications. The NCP5360A integrated
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NCP5360A
NCP5360A
56-pin
QFN56
485AY
NCP5360A/D
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Untitled
Abstract: No abstract text available
Text: NCP5369 Integrated Driver and MOSFET The NCP5369 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5369
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NCP5369
40-pin
QFN40
485AZ
NCP5369/D
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Untitled
Abstract: No abstract text available
Text: NCP5338 Integrated Driver and MOSFET The NCP5338 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5338
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NCP5338
40-pin
NCP5338/D
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Untitled
Abstract: No abstract text available
Text: NCP5338 Integrated Driver and MOSFET The NCP5338 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5338
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NCP5338
NCP5338
NCP5338/D
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Untitled
Abstract: No abstract text available
Text: NCP5366 Integrated Driver and MOSFET The NCP5366 integrates a MOSFET driver, high-side MOSFET and low-side MOSFET into a 6mm x 6mm 40-pin QFN package. The driver and MOSFETs have been optimized for high-current DC-DC buck power conversion applications. The NCP5366 integrated
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NCP5366
NCP5366
40-pin
NCP5366/D
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application note gate driver with bootstrap capacitor
Abstract: AD2G ncp53
Text: NCP5366 Integrated Driver and MOSFET The NCP5366 integrates a MOSFET driver, high-side MOSFET and low-side MOSFET into a 6mm x 6mm 40-pin QFN package. The driver and MOSFETs have been optimized for high-current DC-DC buck power conversion applications. The NCP5366 integrated
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NCP5366
40-pin
NCP5366/D
application note gate driver with bootstrap capacitor
AD2G
ncp53
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71933
Abstract: Mohan si4886 Si4420 siliconix Mohan power electronics converters applications a MOSFET SO-8 Si4420 siliconix datasheet SI4442 AN605 Si4420
Text: AN605 Vishay Siliconix Power MOSFET Basics: Understanding MOSFET Characteristics Associated With The Figure of Merit Jess Brown, Guy Moxey INTRODUCTION There are several factors which affect the gate of the MOSFET, and it is necessary to understand the fundamental
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AN605
08-Sep-03
71933
Mohan
si4886
Si4420 siliconix
Mohan power electronics converters applications a
MOSFET SO-8
Si4420 siliconix datasheet
SI4442
AN605
Si4420
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IDM30512CW50 TECHNOLOGIES, INC. Broadband RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM30512CW50 is designed for VHF/UHF-Band systems operating over the frequency band 30-512 MHz under CW conditions. Over the
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IDM30512CW50
IDM30512CW50
30-512MHz
400MHz.
2x100mA
IDM30512CW50-REV-NC-DS-REV-NC
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IRLML6401TRPBF
Abstract: FTS6000 IR2153PBF irf7530 Top View micro-8 m4820 4864 so8
Text: PD - 95335C IRF7413ZPbF HEXFET Power MOSFET Applications l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems Benefits l Ultra-Low Gate Impedance
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95335C
IRF7413ZPbF
IRF740SPBF,
IRFR3707ZPBF,
IRLL2705PBF
IRF4905PBF
O-220)
IRFP450PBF
O-247)
IRF740SPBF
IRLML6401TRPBF
FTS6000
IR2153PBF
irf7530
Top View micro-8
m4820
4864 so8
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G60N
Abstract: Thermistor pspice mosfet mark code G4 ic 8870 ORCAD PSPICE BOOK AN1256 IRFZ34 MBR340 TC1410N 100n00
Text: AN1256 Microchip’s Power MOSFET Driver Simulation Models Author: Cliff Ellison Microchip Technology Inc. Ron Wunderlich (Innovative Ideas and Design) INTRODUCTION The simulation models for Microchip’s power MOSFET drivers aid in the design and analysis of various circuits
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AN1256
TC1410N
DS01256A-page
G60N
Thermistor pspice
mosfet mark code G4
ic 8870
ORCAD PSPICE BOOK
AN1256
IRFZ34
MBR340
100n00
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