2SK1658
Abstract: TC236
Text: MOS FIELD EFFECT TRANSISTOR 2SK1658 IM-CHANNELMOS FET FOR SWITCHING The 2SK1658 is an N-channel vertical type MOS FET which can be PACKAGE DIMENSIONS Unit : mm driven by 2.5 V power supply. As the MOS FET is low Gate Leakage Current, it is suitable fo r
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2SK1658
2SK1658
IEI-1209)
TC236
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sot89-3
Abstract: No abstract text available
Text: MOS FET P-CHANNEL POWER MOS FET FOR SWITCHING The S-90P series is a P-channel power MOS FET that realizes low on-resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate protection
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S-90P
OT-23-3
OT-89-3
OT-23-3,
OT-89-3
S-90P0112SMA
S-90P0222SUA
S-90P0332SUA
sot89-3
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G1563
Abstract: D1563 2SK1658 C10535E VP15-00-3 NEC MARKING surface TC236
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SK1658 is an N -channel vertical type MOS FET which can be PACKAGE DRAWING Unit : mm driven by 2.5 V power supply. 2.1 ±0.1 1.25 ±0.1 As the MOS FET is low Gate Leakage Current, it is suitable for appliances
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2SK1658
2SK1658
G1563
D1563
C10535E
VP15-00-3
NEC MARKING surface
TC236
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90n0212sma
Abstract: SOT233
Text: MOS FET N-CHANNEL POWER MOS FET FOR SWITCHING The S-90N series is an N-channel power MOS FET that realizes a low on-resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate
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S-90N
OT-23-3
OT-89-3
OT-23-3,
OT-89-3,
S-90N0113SMA
S-90N0133SUA
S-90N0212SMA
S-90N0232SUA
90n0212sma
SOT233
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nec 2501
Abstract: nec RF package SOT89 NE5500134 nec marking power amplifier NEC MARKING CODE code marking NEC date code marking NEC FET SOT-89 N-Channel HS350 sot89 fet
Text: DATA SHEET SILICON POWER MOS FET NE5500134 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate
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NE5500134
NE5500134
OT-89
nec 2501
nec RF package SOT89
nec marking power amplifier
NEC MARKING CODE
code marking NEC
date code marking NEC
FET SOT-89 N-Channel
HS350
sot89 fet
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ELECTRONIC BALLAST SK
Abstract: No abstract text available
Text: Panasonic Power MOS-FET Gate Drive IC AN8175/S • Overview The AN8175/S is a high voltage,high speed power MOS-FET and IGBT driver with both high side and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized
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AN8175/S
AN8175/S
200/420mA
700ns
D00281AE
ELECTRONIC BALLAST SK
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dc 20v motor matsua
Abstract: mosfet Gate Drive dc 20v motor matsushita AN8175 panasonic igbt and power mosfet driver
Text: Panasonic Power MOS-FET Gate Drive 1C AN8175/S Overview The AN8175/S is a high voltage,high speed power MOS-FET and IGBT driver with both high side and low side referenced output channels. Proprietary HYIC and latch immune CMOS technologies enable ruggedized
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AN8175/S_
AN8175/S
200/420mA
700ns
D00281AE
dc 20v motor matsua
mosfet Gate Drive
dc 20v motor matsushita
AN8175
panasonic igbt and power mosfet driver
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2SK1656
Abstract: No abstract text available
Text: DATASHEET Warn MOS FIELD EFFECT TRANSISTOR m È8 Œ Êfflfë »n m , 2SK1656 N-CHANNEL MOS FET FOR SW ITC H IN G The 2SK1656 is an N-channel vertical type MOS FET which can be PACKAGE DIMENSIONS Unit : mm driven by 2.5 V power supply. As the MOS FET is low Gate Leakage Current, it is suitable for
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2SK1656
IEI-1209)
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PDF
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2SK1657
Abstract: No abstract text available
Text: M O S FIELD EFFECT TRANSISTOR 2SK1657 N-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit: mm 2.8 ± 0.2 0.65ig:!5 1.5 3 The 2SK1657 is an N-channel vertical type MOS FET w hich can be driven by 2.5 V power supply. As the MOS FET is lo w Gate Leakage C urrent, it is suitable fo r filte r
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2SK1657
2SK1657
El-1209)
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90n0212sma
Abstract: No abstract text available
Text: POWER SUPPLY ICs [GENERAL-PURPOSE] POWER MOS FET Under Development The S-90N series is an N-channel power MOS FET that realizes a low on-resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate
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S-90N
OT-23-3
OT-89-3
OT-23-3,
OT-89-3,
S-90N0113SMA
S-90N0133SUA
90n0212sma
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MP4208
Abstract: No abstract text available
Text: MP4208 TOSHIBA Power MOS FET Module Silicon P Channel MOS Type Four L2-π-MOSV in One MP4208 Industrial Applications High Power High Speed Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • −4 V gate drive available
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MP4208
-60oducts
MP4208
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HAF2026RJ
Abstract: HAF2026RJ-EL-E
Text: HAF2026RJ Silicon N Channel Power MOS FET Power Switching REJ03G1255-0100 Rev.1.00 Sep 26, 2005 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
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HAF2026RJ
REJ03G1255-0100
HAF2026RJ
HAF2026RJ-EL-E
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Here I Am Lord
Abstract: HAF2026RJ HAF2026RJ-EL-E
Text: HAF2026RJ Silicon N Channel Power MOS FET Power Switching REJ03G1255-0200 Rev.2.00 Jun 02, 2006 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
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HAF2026RJ
REJ03G1255-0200
Here I Am Lord
HAF2026RJ
HAF2026RJ-EL-E
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Untitled
Abstract: No abstract text available
Text: MP4208 TOSHIBA Power MOS FET Module Silicon P Channel MOS Type L2-π-MOSV 4 in 1 MP4208 Industrial Applications High Power High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • −4 V gate drive available ·
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MP4208
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Untitled
Abstract: No abstract text available
Text: MP4210 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type Four L2-π-MOSV inOne MP4210 Industrial Applications High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver • 4-V gate drivability
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MP4210
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Untitled
Abstract: No abstract text available
Text: MP4211 TOSHIBA Power MOS FET Module Silicon P Channel MOS Type Four L2-π-MOSV inOne MP4211 Industrial Applications High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver • 4-V gate drivability
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MP4211
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MP4410
Abstract: No abstract text available
Text: MP4410 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type L2-π-MOSV 4 in 1 MP4410 Industrial Applications High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • 4 V gate drive available •
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MP4410
MP4410
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MP4209
Abstract: No abstract text available
Text: MP4209 Silicon N Channel MOS Type Four L2-π-MOSV in One TOSHIBA Power MOS FET Module MP4209 Industrial Applications High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver • 4-V gate drivability
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MP4209
MP4209
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2SJ128-Z
Abstract: TC181
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ128-Z P-CHANNEL SILICON POWER MOS FET FOR HIGH SPEED SWITCHING PACKAGE DRAWING Unit: mm • Suitable for switching power supplies, actuator controls, and pulse circuits. 5.0 ±0.2 • 4 V gate drive (Logic level)
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2SJ128-Z
2SJ128-Z
TC181
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Untitled
Abstract: No abstract text available
Text: MP4412 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type Four L2-π-MOSV inOne MP4412 Industrial Applications High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver • 4-V gate drivability
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MP4412
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Untitled
Abstract: No abstract text available
Text: Rev.2.0_00 S-90N0113SMA POWER MOS FET The S-90N0113SMA is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate protection diode is built in
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S-90N0113SMA
S-90N0113SMA
OT-23-3
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Untitled
Abstract: No abstract text available
Text: Rev.2.0_00 S-90N0513SPN POWER MOS FET The S-90N0513SPN is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate protection diode is built in
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S-90N0513SPN
S-90N0513SPN
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PA2770GR
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2770GR SWITCHING DUAL P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2770GR is Dual P-Channel MOS Field Effect Transistors designed for Motor Drive application. 8 5 1 ; Source 1 2 ; Gate 1
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PA2770GR
PA2770GR
M8E0904E
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13003 TRANSISTOR equivalent
Abstract: No abstract text available
Text: Rev.2.0_00 S-90N0442SUA POWER MOS FET The S-90N0442SUA is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate protection diode is built in
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S-90N0442SUA
S-90N0442SUA
OT-89-3
13003 TRANSISTOR equivalent
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