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    POWER MOS FET Search Results

    POWER MOS FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NP90N04MDH Renesas Electronics Corporation Switching　N-CHANNEL POWER MOS FET Visit Renesas Electronics Corporation
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
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    POWER MOS FET Price and Stock

    ROHM Semiconductor RUF015N02TL

    MOSFETs Med Pwr, Sw MOSFET P Chan, 20V, 1.5A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI RUF015N02TL Reel 84,000 3,000
    • 1 -
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    • 10000 $0.133
    		Buy Now

    ROHM Semiconductor RV2C010UNT2L

    MOSFETs 20V 1A Nch Power MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI RV2C010UNT2L Reel 24,000 8,000
    • 1 -
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    • 1000 -
    • 10000 $0.066
    		Buy Now

    Vishay Intertechnologies SIHD1K4N60E-GE3

    MOSFETs 600V Vds 30V Vgs DPAK (TO-252)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SIHD1K4N60E-GE3 Reel 9,000 3,000
    • 1 -
    • 10 -
    • 100 -
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    • 10000 $0.419
    		Buy Now

    Vishay Intertechnologies SIR826BDP-T1-RE3

    MOSFETs 80V Vds 20V Vgs PowerPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SIR826BDP-T1-RE3 Reel 6,000 3,000
    • 1 -
    • 10 -
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    • 1000 -
    • 10000 $0.571
    		Buy Now

    Vishay Intertechnologies SIHH068N60E-T1-GE3

    MOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SIHH068N60E-T1-GE3 Reel 6,000 3,000
    • 1 -
    • 10 -
    • 100 -
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    • 10000 $4.23
    		Buy Now
    Find more POWER MOS FET price and stock on Findchips.com

    POWER MOS FET Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Power MOSFET single-shot and repetitive avalanche ruggedness rating NXP Semiconductors AN10273 - Power MOSFET single-shot and repetitive avalanche ruggedness rating Original PDF

    POWER MOS FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pa1556ah

    Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
    Text: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET


    Original     		PDF O-251/-252, O-220/-262 SC-96 SC-95 SC-96 OT-23) D10702EJAV0PF00 pa1556ah PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326

    NE5500434

    Abstract: nec RF package SOT89 nec 2501
    Text: DATA SHEET SILICON POWER MOS FET NE5500434 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate lateral MOS


    Original     		PDF NE5500434 NE5500434 OT-89 nec RF package SOT89 nec 2501

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier


    Original     		PDF NE5520379A NE5520379A

    C10535E

    Abstract: C10943X MEI-1202 PA1701 TEA-1035 UPA1701 1037 u
    Text: DATA SHEET MOS Field Effect Power Transistors µPA1701 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect Transistor in millimeter designed for power management applications of note


    Original     		PDF PA1701 C10535E C10943X MEI-1202 PA1701 TEA-1035 UPA1701 1037 u

    NE5520379A

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier


    Original     		PDF NE5520379A NE5520379A

    nec 1678

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5500479A 3.5 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier


    Original     		PDF NE5500479A NE5500479A nec 1678

    NE5510379A

    Abstract: NE5510379A-T1
    Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510379A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 3 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier


    Original     		PDF NE5510379A NE5510379A NE5510379A-T1

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier


    Original     		PDF NE5520379A NE5520379A

    NE5510279A

    Abstract: NE5510279A-T1
    Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510279A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier


    Original     		PDF NE5510279A NE5510279A NE5510279A-T1

    C10535E

    Abstract: C10943X C11531E MEI-1202 PA1703 TEA-1035
    Text: DATA SHEET SHEET DATA MOS FIELD EFFECT POWER TRANSISTORS µPA1703 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect Transis- in millimeter tor designed for power management applications of


    Original     		PDF PA1703 C10535E C10943X C11531E MEI-1202 PA1703 TEA-1035

    MEI-1202

    Abstract: PA1703 TEA-1035 C10535E C10943X C11531E transistor t 2180
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µPA1703 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect Transis- in millimeter tor designed for power management applications of notebook computers.


    Original     		PDF PA1703 MEI-1202 PA1703 TEA-1035 C10535E C10943X C11531E transistor t 2180

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SHEET DATA MOS FIELD EFFECT POWER TRANSISTORS µPA1703 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect Transis- in millimeter tor designed for power management applications of


    Original     		PDF PA1703

    C10535E

    Abstract: C10943X C11531E MEI-1202 PA1700A TEA-1035
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µPA1700A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The µ PA1700A is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management of notebook computers. PACKAGE DRAWING Unit : mm


    Original     		PDF PA1700A PA1700A C10535E C10943X C11531E MEI-1202 TEA-1035

    hitachi fet

    Abstract: Hitachi 2SJ fet array 2SJ series
    Text: Hitachi Power MOS FET DATA BOOK No. 1 P-Channel 2SJ Series Power MOS FET Array Power MOS FET Module SOP-8 (HAT Series) HITACHI ADE-408-002E


    OCR Scan     		PDF ADE-408-002E hitachi fet Hitachi 2SJ fet array 2SJ series

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA POWER MOS FET 7t-MOS Series € %


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ ¿tPA1702 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect in: millimeter Transistor designed for DC/DC converters and power


    OCR Scan     		PDF tPA1702

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ ¿¿PA1702 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect in: millimeter Transistor designed for DC/DC converters and power


    OCR Scan     		PDF uPA1702

    a1037

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ ¿¿PA1700A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeter This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power


    OCR Scan     		PDF uPA1700A a1037

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ pPM 703 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect Transis­ in millimeter tor designed for power management applications of


    OCR Scan     		PDF

    C 2371

    Abstract: 2SK2133-Z
    Text: MOS FIELD EFFECT POWER TRANSISTORS 2SK2133, 2SK2133-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS Unit : mm DESCRIPTION The 2SK2133, 2SK2133-Z are N-channel Power MOS Field Effect Transistors designed for high voltage switching applications.


    OCR Scan     		PDF 2SK2133, 2SK2133-Z 2SK2133 2SK2133-Z IEI-1209) C 2371

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS FIELD EFFECT POWER TRANSISTORS _ /¿PA 1700A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeter This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power


    OCR Scan     		PDF

    2SK2133

    Abstract: 2SK2133-Z MP-25
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SK2133, 2SK2133-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION The 2SK2133, 2SK2133-Z are N-channel Power MOS Field Effect Unit : mm Transistors designed for high voltage switching applications.


    OCR Scan     		PDF 2SK2133, 2SK2133-Z 2SK2133 MP-25 O-220AB) 2SK2133-Z 2SK2133 MP-25

    SK2134

    Abstract: 2SK2134 SK213 2SK2134-Z MP-25 NEC 2sk2134
    Text: MOS FIELD EFFECT POWER TRANSISTORS 2SK2134, 2SK2134-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2134, 2SK2134-Z are N-channel Power MOS Field Effect Transistors designed for high voltage switching applications. FEATURES • Low On-state Resistance


    OCR Scan     		PDF 2SK2134, 2SK2134-Z 2SK2134-Z IEI-1209) SK2134 2SK2134 SK213 MP-25 NEC 2sk2134

    093.216

    Abstract: 2sk2974 093.941 transistor 2sk2974
    Text: MITSUBISHI RF POWER MOS FET 2SK2974 SILICON MOS FET TYPE DESCRIPTION OUTLINE DRAWING Dimensions in mm 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. INDEX MARK BOTTOM (TOP) FEATURES • High power gain:Gpe>8.4dB


    OCR Scan     		PDF 2SK2974 2SK2974 450MHz 30dBm 600mA 093.216 093.941 transistor 2sk2974