POWER LINEAR LDMOS FREESCALE Search Results
POWER LINEAR LDMOS FREESCALE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN |
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MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN |
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MGN1S0508MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-8V GAN |
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MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN |
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MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN |
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POWER LINEAR LDMOS FREESCALE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 PCS Band RF Linear LDMOS Amplifier Designed for ultra - linear amplifier applications in 50 Ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity |
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MHL19926 MHL19926N | |
Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 PCS Band RF Linear LDMOS Amplifier Designed for ultra - linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity |
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MHL19338 MHL19338N | |
Contextual Info: Freescale Semiconductor Technical Data Rev. 3, 1/2005 PCS Band RF Linear LDMOS Amplifier Designed for ultra - linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity |
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MHL18336 MHL18336N | |
Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 PCS Band RF Linear LDMOS Amplifier MHL18926N Designed for ultra - linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity |
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MHL18926 MHL18926N | |
MMZ20363B
Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
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MRF1550
Abstract: MMH3101 ar164 uhf amplifier design MRF454 motorola MOTOROLA SELECTION mrf150 MRF247 bts 425 l1 mrf5015 MRF9135
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SG46/D xx/2004 MRF1550 MMH3101 ar164 uhf amplifier design MRF454 motorola MOTOROLA SELECTION mrf150 MRF247 bts 425 l1 mrf5015 MRF9135 | |
MRF8P9040N
Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
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3332-GContextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 Cellular Band RF Linear LDMOS Amplifiers Designed for ultra - linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding |
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MHL9236 MHL9236M MHL9236N MHL9236MN 3332-G | |
Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 1/2005 Cellular Band RF Linear LDMOS Amplifier MHL9838N Designed for ultra - linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding |
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MHL9838 MHL9838N | |
Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 1/2005 3G Band RF Linear LDMOS Amplifier Designed for ultra - linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity |
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MHL21336 MHL21336N 211in, MHL21336N | |
Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 1/2005 PCS Band RF Linear LDMOS Amplifier Designed for ultra - linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity |
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MHL19936 MHL19936N | |
Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 Cellular Band RF Linear LDMOS Amplifier MHL9318N Designed for ultra - linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding |
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MHL9318 MHL9318N | |
power transistors table
Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
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301apContextual Info: Freescale Semiconductor Technical Data Rev. 2, 1/2005 CDMA Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase |
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MHPA18010N 301ap | |
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MHL18336Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MHL18336/D SEMICONDUCTOR TECHNICAL DATA The RF Line PCS Band RF Linear LDMOS Amplifier MHL18336 Freescale Semiconductor, Inc. Designed for ultra–linear amplifier applications in 50 ohm systems operating in |
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MHL18336/D MHL18336 MHL18336 | |
MHL18926Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MHL18926/D SEMICONDUCTOR TECHNICAL DATA The RF Line PCS Band RF Linear LDMOS Amplifier MHL18926 Freescale Semiconductor, Inc. Designed for ultra–linear amplifier applications in 50 Ohm systems operating |
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MHL18926/D MHL18926 MHL18926 | |
MHL18336N
Abstract: MHL18336
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MHL18336. MHL18336N MHL18336N MHL18336 | |
Contextual Info: Document Number: MHL18926N Rev. 6, 8/2006 Freescale Semiconductor Technical Data MHL18926N Designed for ultra - linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity |
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MHL18926N MHL18926. | |
Contextual Info: MHL18926N Rev. 4, 1/2005 Freescale Semiconductor Technical Data PCS Band RF Linear LDMOS Amplifier MHL18926N Designed for ultra - linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding |
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MHL18926N MHL18926 MHL18926N | |
king 525
Abstract: MHL18336 MHL18336N
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MHL18336N MHL18336. king 525 MHL18336 MHL18336N | |
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHL19926N Rev. 5, 7/2005 PCS Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 Ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding |
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MHL19926N MHL19926. MHL19926N | |
Contextual Info: Freescale Semiconductor Technical Data PCS Band RF Linear LDMOS Amplifier MHL18926N LIFETIME BUY Designed for ultra - linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity |
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MHL18926N MHL18926. MHL18926N | |
Contextual Info: Freescale Semiconductor Technical Data PCS Band RF Linear LDMOS Amplifier LIFETIME BUY Designed for ultra - linear amplifier applications in 50 Ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity |
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MHL19926N MHL19926. MHL19926N | |
Contextual Info: MHL18336N Rev. 3, 1/2005 Freescale Semiconductor Technical Data PCS Band RF Linear LDMOS Amplifier Designed for ultra - linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity |
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MHL18336N MHL18336 MHL18336N |