POWER DIODE SOT223 Search Results

13003D

Contextual Info: DXT13003DG 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 450V • • • BVCES > 700V BVEBO > 9V • • IC = 1.5A high Continuous Collector Current • • Integrated Collector-Emitter Diode to act as free-wheeling diode

Contextual Info: BAT66. Silicon Schottky Diode • Power rectifier diode • For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purpose BAT66-05 " ,   , ! ESD: Electrostatic discharge sensitive device, observe handling precaution!

BAT70

Abstract: BAT70-05
Contextual Info: BAT70. Silicon Schottky Diode
Power rectifier diode
Parallel connection for maximum I F per package
Low forward voltage drop
For power supply
For clamping and protection BAT70-05 4 D 1 1 2 D 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution!

bat66

Contextual Info: BAT66. Silicon Schottky Diode • Power rectifier diode • For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purpose BAT66-05 " ,   , ! ESD: Electrostatic discharge sensitive device, observe handling precaution!

fdfs6n303

Abstract: 6n303 Schottky Diode 50V 3A SOIC-16 a12s
Contextual Info: October 2001 FDFS6N303 N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.

fdfs6n303

Abstract: 6n303 L86Z SOIC-16 F011 F63TNR F852
Contextual Info: October 2001 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.

fdfs6n303

Abstract: F011 F63TNR F852 L86Z SOIC-16
Contextual Info: January 2000 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.

6n303

Abstract: fdfs6n303 fdfs SOIC-16
Contextual Info: October 2001 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.

fdfs6n303

Abstract: SOIC-16 mosfet with schottky body diode
Contextual Info: October 2003 FDFS6N303 N-Channel MOSFET with Schottky Diode General Description Features The FDFS6N303 incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The MOSFET and Schottky diode are isolated inside the package. The general purpose pinout has been chosen to maximize flexibility and

BAT66

Abstract: BAT66-05
Contextual Info: BAT66. Silicon Schottky Diode
Power rectifier diode
For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purpose BAT66-05 4 D 1 1 D 2 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE  DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications.  FEATURES

diode l 0607

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE  DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications.  FEATURES

Contextual Info: SIEMENS Silicon Schottky Diode BAT 66-05 Preliminary Data • Low-power Schottky rectifier diode • For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes Type Marking Ordering Code tape and reel BAT 66-05 BAT 66-05

Q62702-A988

Abstract: A988 DIODE BAT Code 035 on semiconductor JS marking diode
Contextual Info: Silicon Schottky Diode BAT 66-05 Preliminary Data Low-power Schottky rectifier diode ● For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes ● Type Marking Ordering Code tape and reel BAT 66-05 BAT 66-05 Q62702-A988

motorola 5118

Abstract: SOT-223 KD
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M V7005T1 Silicon Epicap Diode Motorola Preferred Device This silicon epicap diode is designed for use in high capacitance, high-tuning ratio applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

VPS05163

Abstract: bat66 BAT66-05
Contextual Info: BAT66-05 Silicon Schottky Diode
Low-power Schottky rectifier diode
For low-loss, fast-recovery rectification, 4 meter protection, bias isolation and clamping purpose 3 2 1 VPS05163 2, 4 1 3 EHA00005 Type Marking BAT66-05 BAT 66-05 Pin Configuration 1 = A1

VPS05163

Abstract: Schottky Diode SOT-223 6605
Contextual Info: BAT 66-05 Silicon Schottky Diode • Low-power Schottky rectifier diode • For low-loss, fast-recovery rectification, 4 meter protection, bias isolation and clamping purpose 3 2 1 VPS05163 2, 4 1 3 EHA00005 Type Marking BAT 66-05 BAT 66-05 Pin Configuration

1N5825

Abstract: diode 1N5825 N5824 1n6823 1N5824 1N5823 marking Bq sot23 1N5824 ON
Contextual Info: 1N5823,1N5824 1N5825 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5823 and 1N5825 are Motorola Preformi Devices Designer’s Data Sheet SCHOTTKY BARRIER RECTIFIERS Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diode DAP222 This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board

3148b

Contextual Info: MBR3520 MBR3535 MBR3545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR3545 is a Motorola Preferred Device Switchmode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art

1N5628

Abstract: 12115X marking AB SOD123 1N5828
Contextual Info: 1N5826 1N5827 1N5828 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N582S and 1N5828 are Motorola Preferred Devices Designer’s Data Sheet Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.

DIODE SD51

Abstract: 5817 SOD-123 bly 83 Motorola Switchmode SD51
Contextual Info: 1N6097 1N6098 SD51 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifiers . . . using the platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

12v dc full wave bridge rectifier

Abstract: 5000 watt full bridge design 1N5S34
Contextual Info: 1N5832 IN 5833 1N5834 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5832 and 1N5S34 are Motorola Preferred Devices Switchmode Power Rectifier SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.