Micro Linear Application Note 33
Abstract: ML4827-1 ML 723 CT IEC1000-3-2 ML4824-1 ML4827 ML4827-2 400V to 6V DC Regulator TO 220 Package Micro Linear Application Note 33 pfc
Text: November 1998 PRELIMINARY ML4827 Fault-Protected PFC and PWM Controller Combo GENERAL DESCRIPTION FEATURES The ML4827 is a controller for power factor corrected, switched mode power supplies, that includes circuitry necessary for conformance to the safety requirements of
|
Original
|
ML4827
ML4827
UL1950.
ML4824-1,
IEC1000-3-2
Micro Linear Application Note 33
ML4827-1
ML 723 CT
ML4824-1
ML4827-2
400V to 6V DC Regulator TO 220 Package
Micro Linear Application Note 33 pfc
|
PDF
|
G32A-A450-VD2
Abstract: G32A-A40
Text: Operation • Replacement Parts G32A-A Power Device Cartridge The G32A-A Power Device Cartridge a Triac Unit can be replaced with a new one. When the temperature indicator has changed from pink to red, the triac circuitry may have malfunctioned possibly by an excessive flow of current, in which case, dismount the damaged cartridge for replacement.
|
Original
|
G32A-A
G3PA-420B-VD
G32-A-A
G32A-A450-VD2
G32A-A40
|
PDF
|
1001 dl pwm
Abstract: Diode 0.6V irl2203 equivalent irl2203 VO17 SC1189SWTR *fr120n
Text: SC1189 Programmable Synchronous DC/DC Converter, Dual LDO Controller POWER MANAGEMENT Description Features The SC1189 combines a synchronous voltage mode controller with two low-dropout linear regulators providing most of the circuitry necessary to implement
|
Original
|
SC1189
200kHz,
IPC-SM-782A,
1001 dl pwm
Diode 0.6V
irl2203 equivalent
irl2203
VO17
SC1189SWTR
*fr120n
|
PDF
|
MBRS130LT3
Abstract: MC34710 PC33710EW
Text: Freescale Semiconductor Technical Data MC34710 Rev. 3.0, 3/2006 Document order number: Dual Output DC-DC & Linear Regulator IC The 34710 is a dual-output power regulator IC integrating switching regulator, linear regulator, supervisory and power supply sequencing circuitry. With a wide operating input voltage range of
|
Original
|
MC34710
MBRS130LT3
MC34710
PC33710EW
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WPMDH1200601J MagI³C Power Module Product Family VDRM - Variable Step Down Regulator Module DESCRIPTION The VDRM series of the MagI³C Power Modules Family comprise a fully integrated current mode DC/DC power supply with both the switching power stage, control circuitry and passive all in one package
|
Original
|
WPMDH1200601J
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WPMDL1300331BD – 3.3V MagI³C Power Module Product Family FDRM - Fixed Step Down Regulator Module DESCRIPTION 3 The FDRM series of the MagI C Power Modules Family comprise a fully integrated current mode DC/DC power supply with both the switching power stage, control circuitry and passive all in one package.
|
Original
|
WPMDL1300331BD
O263-5
|
PDF
|
LM358
Abstract: 4410 SO-8
Text: SC1185 & SC1185A Programmable Synchronous DC/DC Converter, Dual LDO Controller POWER MANAGEMENT Description Features The SC1185 combines a synchronous voltage mode controller with two low-dropout linear regulators providing most of the circuitry necessary to implement three DC/
|
Original
|
SC1185
140kHz,
IPC-SM-782A,
LM358
4410 SO-8
|
PDF
|
bq4014
Abstract: bq4014Y
Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy
|
Original
|
bq4014/bq4014Y
256Kx8
bq4014
152-bit
32-pin
10-year
bq4014Y
|
PDF
|
LM358
Abstract: 1186C
Text: SC1186 Programmable Synchronous DC/DC Converter, Dual LDO Controller POWER MANAGEMENT Description Features u u u u u u The SC1186 combines a synchronous voltage mode controller with two low-dropout linear regulators providing most of the circuitry necessary to implement
|
Original
|
SC1186
140kHz,
1500uF
330uF
IRLR3103N
IRLR024N
1186C
LM358
|
PDF
|
Untitled
Abstract: No abstract text available
Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy
|
Original
|
bq4014/bq4014Y
256Kx8
bq4014
152-bit
32-pin
10-year
|
PDF
|
bq4014
Abstract: BQ4014MB-120 BQ4014MB-85 bq4014Y BQ4014YMB-85
Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy
|
Original
|
bq4014/bq4014Y
256Kx8
bq4014
152-bit
32-pin
10-year
BQ4014MB-120
BQ4014MB-85
bq4014Y
BQ4014YMB-85
|
PDF
|
Untitled
Abstract: No abstract text available
Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy
|
Original
|
bq4014/bq4014Y
256Kx8
bq4014
152-bit
32-pin
10-year
|
PDF
|
Eimac 3cx400a7
Abstract: Eimac 8874 3CX400A7 power transistor audio amplifier 500 watts tube socket SK-1900 "Power Triode" 200 watt audio amplifier high power Triode 30MHZ Power Triode
Text: Eimac Power Grid Tube - Quick Reference Data Sheet Page 1 of 1 3CX400A7/8874 The Eimac 3CX400A7/8874 is a compact high-mu power triode intended for use in zero bias Class B amplifiers in audio or RF applications. Operation with zero bias simplifies circuitry and cathode driven
|
Original
|
3CX400A7/8874
3CX400A7/8874
150MHZ)
432MHz)
ngs\carolyn\Desktop\Objects\3cx400a7-8874
Eimac 3cx400a7
Eimac 8874
3CX400A7
power transistor audio amplifier 500 watts
tube socket SK-1900
"Power Triode"
200 watt audio amplifier
high power Triode
30MHZ
Power Triode
|
PDF
|
506AL
Abstract: NCP346 NUS3046MN NUS3046MNT1G
Text: NUS3046MN Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining the NCP346 overvoltage protection circuit OVP with a 30 V P−channel power MOSFET. This IC is specifically designed to protect sensitive electronic circuitry from overvoltage transients and
|
Original
|
NUS3046MN
NCP346
NUS3046MN/D
506AL
NUS3046MN
NUS3046MNT1G
|
PDF
|
|
|
bq4017
Abstract: bq4017Y
Text: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable
|
Original
|
bq4017/bq4017Y
2048Kx8
bq4017
216-bit
bq4017Y
|
PDF
|
full adder using ic 74138
Abstract: full adder using Multiplexer IC 74151 decoder IC 74138 TTL 74194 74151 multiplexer pin configuration of IC 74138 Application of Multiplexer IC 74151 IC 74138 74138 IC decoder Multiplexer IC 74151
Text: EP1800JC-EV1 EP1800JC-EV1 EVALUATION CHIP • Advanced CHMOS circuitry features low power, high performance, and high noise immunity power consumption, high noise margins, and ease of design. The EP1800 is implemented in a sub 2-micron dual-polysilicon CHMOS floating gate EPROM tech
|
OCR Scan
|
EP1800JC-EV1
EPt800
68-pin
EP1800JC-EV1
0UT20
0UT21
OUT22
0UT23
full adder using ic 74138
full adder using Multiplexer IC 74151
decoder IC 74138
TTL 74194
74151 multiplexer
pin configuration of IC 74138
Application of Multiplexer IC 74151
IC 74138
74138 IC decoder
Multiplexer IC 74151
|
PDF
|
si9970
Abstract: brushless dc motor simple circuit ups active power easy 600 SI9955 tachometer vdo SI9956
Text: _AN714 Vishay Siliconix A Compact Controller for Brushless DC Motors W harton McDaniel The drive electronics for 3-phase brushless dc motors often occupy a surprising amount of space. Complex circuitry is needed to drive the power MOSFETs, and this gets even
|
OCR Scan
|
AN714
Si9979
Si9979,
si9970
brushless dc motor simple circuit
ups active power easy 600
SI9955
tachometer vdo
SI9956
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The inte gral control circuitry and lithium
|
OCR Scan
|
bq4017/bq4017Y
2048Kx8
bq4017
216-bit
bq4017
2048K
|
PDF
|
Untitled
Abstract: No abstract text available
Text: bq4011/bq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy
|
OCR Scan
|
bq4011/bq4011Y
32Kx8
bq4011
144-bit
28-pin
10-year
bq4011YMA-150N
bq4011
|
PDF
|
BQ4025
Abstract: bq4025Y
Text: bq4025/bq4025Y BENCHMARQ 256KX16 Nonvolatile SRAM Features General Description > Data retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 w ords by 16 b its . The integral control circuitry and lithium
|
OCR Scan
|
bq4025/bq4025Y
256KX16
bq4025
304-bit
D0037CH
bq4025Y
|
PDF
|
Z7777
Abstract: No abstract text available
Text: bq4011/bq4011Y UNITRODE- 32Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy
|
OCR Scan
|
28-pin
10-year
bq4011/bq4011Y
32Kx8
bq4011
144-bit
bq4011YMA-150N
bq4011Y-70
bq4011YMA-70N
Z7777
|
PDF
|
Untitled
Abstract: No abstract text available
Text: bq4013/bq4013Y BENCHMARQ 128Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy
|
OCR Scan
|
bq4013/bq4013Y
128Kx8
bq4013
576-bit
32-pin
bq4013YMA-120N
bq4013-70
bq4013Y-70
bq4013
|
PDF
|
Untitled
Abstract: No abstract text available
Text: bq4011/bq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy
|
OCR Scan
|
bq4011/bq4011Y
32Kx8
bq4011
144-bit
bq4011-70
bq4011Y-70
bq4011YMA-70N
bq4011
|
PDF
|
Untitled
Abstract: No abstract text available
Text: bq4010/bq401 OY UNITRODE- 8Kx8 Nonvolatile SRAM Features General Description > D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy
|
OCR Scan
|
bq4010/bq401
bq4010
536-bit
bq4010YMA-70N
bq4010-70
bq4010/bq4010Y
bq401Q
150ns
200ns
|
PDF
|
