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    POWER BJTS Search Results

    POWER BJTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    POWER BJTS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXAN0061

    Abstract: Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs JA BJT depletion mode power mosfet mosfet depletion power bjt datasheet POWER BJTs transconductance mosfet Drive Base BJT BJT with i-v characteristics
    Text: IXAN0061 Power MOSFET Basics Abdus Sattar, IXYS Corporation Power MOSFETs have become the standard choice for the main switching devices in a broad range of power conversion applications. They are majority carrier devices with no minority carrier injection, superior to Power Bipolar Junction Transistors BJTs and


    Original     		IXAN0061 AN10273 IXAN0061 Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs JA BJT depletion mode power mosfet mosfet depletion power bjt datasheet POWER BJTs transconductance mosfet Drive Base BJT BJT with i-v characteristics PDF

    bjt specifications

    Abstract: TRANSISTORS BJT list DG-2128 DG2128 POWER BJTs common base bjt DS-1639 CAMSEMI common emitter bjt TRANSISTOR REPLACEMENT table for transistor
    Text: Power BJT Specification for RDFC Applications Application Note AN-2276 RDFC Circuit Description ABSTRACT This application note provides key parametric requirements of power BJTs suitable for Resonant Discontinuous Forward Converter RDFC applications. As the main power switch, the BJT


    Original     		AN-2276 AN-2276-0904 07-Apr-2009 bjt specifications TRANSISTORS BJT list DG-2128 DG2128 POWER BJTs common base bjt DS-1639 CAMSEMI common emitter bjt TRANSISTOR REPLACEMENT table for transistor PDF

    BLY93a

    Abstract: No abstract text available
    Text: Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. P a r t Number: BLY93A DescrIption: BJTs , Si NPN Power HP" The RF Line 40 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR


    Original     		BLY93A 30Vdc. 175MHzl BLY93a PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: smps circuit diagram 450w DATASHEET OF IC 741C ATX smps troubleshooting atx power supply 450W schematic PWM 220v ac stabilizer aPPLICATION NOTES ON KA3525A ka3842a application note atx power supply 450W SG6105
    Text: POWER S O L U T I O N S Fairchild’s Power Solutions Fairchild Semiconductor is a global leader in delivering energy-efficient power analog, power discrete, and optoelectronic solutions. These products maximize energy savings in power-sensitive applications such as power


    Original     		PDF

    Drive Base BJT

    Abstract: vertical pnp bjt Semiconductor Group igbt the calculation of the power dissipation for the IGBT
    Text: APPLICATION NOTE AN INTRODUCTION TO IGBTS by M. Melito, A. Galluzzo INTRODUCTION In the low and medium power range, Bipolar Junction Transistors BJTs have up to now been the most commonly used power semiconductors, and they still hold a large part of


    Original     		PDF

    POWER BJTs

    Abstract: BI 170 Power Modules tantalum nitride thermister thermisters "Power Modules"
    Text: MODEL 170 Custom Power Modules CUSTOM POWER MODULES DESCRIPTION BI’s Custom Power Modules are designed to assemble all of your circuit’s power components into one, easy to manage, package. Power modules offer a low cost method to improve the circuit density. These modules will


    Original     		PDF

    SIT Static Induction Transistor

    Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
    Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are


    Original     		AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: HMC714LP5 / 714LP5E v01.1108 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Features • Crest Factor Peak-to-Average Power Ratio Measurement • Envelope-to-Average Power Ratio Measurement • Dual channel and channel difference output ports POWER DETECTORS - SMT


    Original     		HMC714LP5 714LP5E 25mm2 PDF

    reverse-conducting thyristor

    Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
    Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate


    Original     		MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor PDF

    bridge rectifier 2A 30v

    Abstract: 5.1V SOD87 sod64 dual diode Schottky Diode 30V 1A SOD87 5V1 zener philips 1PS74SB43 220v 2a diode bridge philips zener SOD87 Schottky Diode 40V sod87
    Text: Discretes and MultiMarket ICs DMI – BL Power 07/08/2002 DMI – BL Power Components in a DVD player/recorder: • Power supply • Audio/video processing board includes control • DVD (reader or reader/writer) engine Semiconductors ASPD / page:2 DMI – BL Power


    Original     		BYD13J 1N4005ID SI4466DY BSP030 PHN103T BSH108 BSP100 PHN210T PHN203 SI4420DY bridge rectifier 2A 30v 5.1V SOD87 sod64 dual diode Schottky Diode 30V 1A SOD87 5V1 zener philips 1PS74SB43 220v 2a diode bridge philips zener SOD87 Schottky Diode 40V sod87 PDF

    Untitled

    Abstract: No abstract text available
    Text: HMC714LP5 / 714LP5E v02.1208 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Features • Crest Factor Peak-to-Average Power Ratio Measurement • Envelope-to-Average Power Ratio Measurement • Dual channel and channel difference output ports • Excellent Channel Matching and Channel


    Original     		HMC714LP5 714LP5E 25mm2 PDF

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    Silicon Tuners

    Abstract: Temperature sensors TDA18272 tda18273 TDA20136 convert sata to usb cable diagram tda19997 usb to sata converter circuit diagram TDA20142 TDA19995
    Text: Application guide Flat-panel TV sets Contents Your partner for flat-panel TV sets 3 1. Power solutions 4 1.1 1.2 1.3 1.4 Primary AC/DC controllers Main power supply: secondary synchronous rectification ICs Standby power supply Discretes 2. RF reception stage


    Original     		PDF

    EE16 429

    Abstract: EE13 8 pin bobbin transformers MJE13003 st DS-1639 core EE13 5V power supply sot23-6 CAMSEMI MJE13003 TO-92 EE-1312 pc40 core EE13 6 pin bobbin transformers
    Text: Basic Design Guide Low Power Resonant Discontinuous Forward Converter Rapidly Implement Application Circuits up to 6 W Using CamSemi’s Low Power RDFC Topology and Advanced Controller ICs C2471LX2 SOT23-6 CamSemi’s low power RDFC topology and advanced controller IC deliver low cost replacements for linear


    Original     		C2471LX2 OT23-6) DG-2128-0905 06-May-2009 EE16 429 EE13 8 pin bobbin transformers MJE13003 st DS-1639 core EE13 5V power supply sot23-6 CAMSEMI MJE13003 TO-92 EE-1312 pc40 core EE13 6 pin bobbin transformers PDF

    SiC BJT

    Abstract: transistor 304
    Text: Proceedings of The 25th International Symposium on Power Semiconductor Devices & ICs, Kanazawa 6-1 10 kV SiC BJTs – static, switching and reliability characteristics Siddarth Sundaresan, Stoyan, Jeliazkov, Brian Grummel, Ranbir Singh GeneSiC Semiconductor, Inc.


    Original     		12M6501 SiC BJT transistor 304 PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC2974 4-Channel PMBus Power System Manager Featuring Accurate Output Current Measurement Features Description Sequence, Trim, Margin and Supervise Four Power Supplies n Manage Faults, Monitor Telemetry and Create Fault Logs n PMBus Compliant Command Set


    Original     		LTC2974 14-Bit 16-Bit 2974fc com/LTC2974 PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC2974 4-Channel PMBus Power System Manager Featuring Accurate Output Current Measurement FEATURES DESCRIPTION Sequence, Trim, Margin and Supervise Four Power Supplies n Manage Faults, Monitor Telemetry and Create Fault Logs n PMBus Compliant Command Set


    Original     		LTC2974 14-Bit LTC2977 16-Bit LTC3880 LTC3883 2974fb com/LTC2974 PDF

    LTC2974UP

    Abstract: ltc2974cup 017VL L16 eeprom
    Text: LTC2974 4-Channel PMBus Power System Manager Featuring Accurate Output Current Measurement FEATURES DESCRIPTION Sequence, Trim, Margin and Supervise Four Power Supplies n Manage Faults, Monitor Telemetry and Create Fault Logs n PMBus Compliant Command Set


    Original     		LTC2974 14-Bit 16-Bit 2974fa com/LTC2974 LTC2974UP ltc2974cup 017VL L16 eeprom PDF

    Untitled

    Abstract: No abstract text available
    Text: The Leader in High Temperature Semiconductor Solutions CHT-ATLAS Version: 3.4 12-Nov-13 Last Modification Date Dual Channel Power Transistor Driver General description Features CHT-ATLAS is a high-temperature, high reliability power transistor driver integrated


    Original     		12-Nov-13 DS-100781 PDF

    HEXFET Power MOSFET designer manual

    Abstract: MOSFET designer manual HEXFET Power MOSFET Designers Manual N-Channel jfet 100V depletion P-Channel Depletion Mosfets BJT with i-v characteristics BJT Gate Drive circuit BJT with V-I characteristics TRANSISTORS BJT with low gate voltage Low Capacitance bjt
    Text: Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different


    Original     		PDF

    current fed push pull topology

    Abstract: EFD25 n87 N87 material
    Text: MIC3830/3831/3832/3833 Current-Fed PWM Controllers Preliminary Information The three output stages are totem-pole drivers capable of 1A peak current to external power MOSFETs, BJTs, or IGBTs. General Description The MIC3830, MIC3831, MIC3832, and MIC3833 are a


    OCR Scan     		MIC3830/3831/3832/3833 MIC3830, MIC3831, MIC3832, MIC3833 IC3830/1/2/3 200kHz IRF540 1N968 EFD25, current fed push pull topology EFD25 n87 N87 material PDF

    HEXFET Power MOSFET designer manual

    Abstract: MOSFET designer manual BJT Gate Drive circuit POWER BJTs BJT with i-v characteristics BJT characteristics N-Channel jfet 200V depletion P-Channel Depletion Mosfet HEXFET Power MOSFET Designers Manual n channel silicon mosfet
    Text: Index Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different


    Original     		PDF

    APT9403

    Abstract: 3000-4-CMD5005 mosfet power hf 1kw CMD5005 APT9302 RC07 768XT188 AP031HV Class B power amplifier, 13.56MHz 13.56Mhz class e power amplifier
    Text: APT9403 By: Kenneth Dierberger Simple and Inexpensive High-Efficiency Power Amplifier Using New APT MOSFETs Presented at RF Expo East November 1994 Simple and Inexpensive High-Efficiency Power Amplifier Using New APT MOSFETs Kenneth Dierberger Applications Engineering Manager


    Original     		APT9403 APT9403 3000-4-CMD5005 mosfet power hf 1kw CMD5005 APT9302 RC07 768XT188 AP031HV Class B power amplifier, 13.56MHz 13.56Mhz class e power amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC2975 4-Channel PMBus Power System Manager Featuring Accurate Input Current and Energy Measurement Description Features Sequence, Trim, Margin and Supervise Four Power Supplies nn Manage Faults, Monitor Telemetry and Create Fault Logs nn PMBus Compliant Command Set


    Original     		LTC2975 LTC3880 16-Bit LTC3883 LTM4676 com/LTC2975 com/2975 2975f PDF