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    POWER BJT 100A Search Results

    POWER BJT 100A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    POWER BJT 100A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fairchild power bjt

    Abstract: pn junction diode structure BJT Gate Drive circuit transistor bjt Drive Base BJT AN-9065 NPN Power BJT 100v synchronous rectifier
    Text: www.fairchildsemi.com AN-9065 FRFET in Synchronous Rectification Introduction A synchronous rectifier becomes essential building block for greater efficiency and higher power density in switching power supplies. It is popular in applications from high-end


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    PDF AN-9065 fairchild power bjt pn junction diode structure BJT Gate Drive circuit transistor bjt Drive Base BJT AN-9065 NPN Power BJT 100v synchronous rectifier

    full bridge mosfet smps

    Abstract: Full-bridge series resonant converter Full bridge SMPS ZVT full bridge ZVT full bridge for welding make full-bridge SMPS smps* ZVT ZVS DRIVER PCIM 95 IRFP450A
    Text: MOSFET Failure Modes in the Zero-Voltage-Switched Full-Bridge Switching Mode Power Supply Applications Alexander Fiel and Thomas Wu International Rectifier Applications Department El Segundo, CA 90245, USA Abstract-As the demand for the telecom/server power is


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    PDF zero-voltag23-32, full bridge mosfet smps Full-bridge series resonant converter Full bridge SMPS ZVT full bridge ZVT full bridge for welding make full-bridge SMPS smps* ZVT ZVS DRIVER PCIM 95 IRFP450A

    Full-bridge LLC resonant converter

    Abstract: LLC resonant converter application note resonant converter for welding AN-9067 Resonant Half-Bridge converter LLC resonant converter transformer fdpf10n50 LLC resonant transformer FDPF10N50FT smps resonant llc
    Text: www.fairchildsemi.com AN-9067 Analysis of MOSFET Failure Modes in LLC Resonant Converter Abstract The trend in power converters is towards increasing power densities. To achieve this goal, it is necessary to reduce power losses, overall system size, and weight by increasing


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    PDF AN-9067 Full-bridge LLC resonant converter LLC resonant converter application note resonant converter for welding AN-9067 Resonant Half-Bridge converter LLC resonant converter transformer fdpf10n50 LLC resonant transformer FDPF10N50FT smps resonant llc

    h-bridge pwm schematics circuit

    Abstract: H-bridge speed control 12v 10a 10a h-bridge driver 12vdc motor forward reverse control diagram H-bridge motor drive source code h-bridge gate drive schematics circuit mosfet based h bridge TRANSISTORS BJT list Switching Power supply with HIP4080A HRF3205 equivalent
    Text: Column #52: Stamp-controlled High-power H-bridge Column #52, August 1999 by Lon Glazner: Stamp-Controlled High Power H-Bridge It seems like quite a few people are using BASIC Stamps as the brains in low-level robotics. Because of simplicity, ease of use, and versatility, it's no wonder that the


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    mosfet base induction heat circuit

    Abstract: mitsubishi sic MOSFET power IGBT MOSFET GTO SCR diode skiip 33 ups 063 IGCT mitsubishi igbt induction heating generator Cree SiC MOSFET SiC BJT zvs zcs induction heating igbt Heatsink For stud devices - Semikron
    Text: High Heat Flux Applications in Power Electronics Scott G. Leslie Chief Technologist Powerex Inc Youngwood PA High Heat Flux Applications in Power Electronics 2005 1 Power Switching Capacity VA Power Semiconductor Device Power Switching Capacity & Application Map


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    igbt spice model

    Abstract: MOSFET IGBT THEORY AND APPLICATIONS shockley diode application GTO thyristor Curve properties HIGH VOLTAGE 3.3kv mosfet IGBT THEORY AND APPLICATIONS calculation of IGBT snubber shockley diode spice shockley diode SIEMENS THYRISTOR
    Text: Power Semiconductor Application Note AN_PSM2e IEEE Industry Applications Society Annual Meeting New Orleans, Louisiana, October 5-9, 1997 Parameter Extraction Methodology and Validation for an Electro-Thermal Physics-Based NPT IGBT Model J. Sigg, P. Türkes, R. Kraus*


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    PDF D-81739 D-85577 29July igbt spice model MOSFET IGBT THEORY AND APPLICATIONS shockley diode application GTO thyristor Curve properties HIGH VOLTAGE 3.3kv mosfet IGBT THEORY AND APPLICATIONS calculation of IGBT snubber shockley diode spice shockley diode SIEMENS THYRISTOR

    IXZ421DF12N100

    Abstract: No abstract text available
    Text: designfeature Siddarth Sundaresan, Director-Device Design & Fabrication, Michael Digangi, Chief Business Development Officer, and Ranbir Singh, President, GeneSiC Semiconductor, Inc. SiC “Super” Junction Transistors Offer Breakthrough High Temp Performance


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    PDF kV-10 -500V -1000V IXZ421DF12N100

    qualcomm msm 8660

    Abstract: ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517
    Text:                 1      2        3         4       5    6      7 ! " 8      #  9 !   


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    PDF RF2043 RF2044 RF2045 RF2046 RF2047 RF2048 RF2103P org/jedec/download/std020 qualcomm msm 8660 ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517

    BJT with V-I characteristics

    Abstract: bjt 100a power bjt transistor 600v 1100D-050 bjt 100a 600v KRT 30 BJT 600V BJT IC Vce
    Text: 2-Pack BJT 2 D I 100D-050 ‘ SSX ✓ n° 7 - POWER TRANSISTOR MODULE • # 5 : Features • 7 1} — 5fc-f K rti >$¥<4 • hF E ^iS *,' Including Free W heeling Diode High DC Current Gain Insulated Type ' Applications • "jJ- H i g H Power S witching


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    PDF 1100D-050 E82988 -di/dt-100A/us BJT with V-I characteristics bjt 100a power bjt transistor 600v 1100D-050 bjt 100a 600v KRT 30 BJT 600V BJT IC Vce

    power bjt transistor 600v

    Abstract: fuji bjt 50D-050A transistor and schematic symbols Transistor BJT 100A 2D TRANSISTOR 50d-050 M208 bjt transistor 600v 2pack transistor module 50a 600V
    Text: FUJI 2DI 50D-050A M U M Ë ïïr a iÊ /< 2-Pack BJT 600 V 50 A 7— \ s7 'S *S 7 & :& > n .— V POWER TRANSISTOR MODULE Features • High Current • h F E ^ g i' High DC Current Gain •mm Insulated Type A pplicatio ns • High Power Switching • ftE fM n X X fll Uninterruptible Power Supply


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    PDF 50D-050A E82988 power bjt transistor 600v fuji bjt 50D-050A transistor and schematic symbols Transistor BJT 100A 2D TRANSISTOR 50d-050 M208 bjt transistor 600v 2pack transistor module 50a 600V

    bjt 100a

    Abstract: 2D11002-100 power BJT 100A power transistor bjt 1000 a TRANSISTOR 0156 Transistor BJT 100A S1m diode ifrd W-J M6 M210
    Text: Ä ID- / I1 2 2-Pack BJT 1000 V 100 a 0 2^ - ' V 1 0W0 V0 W 1 I Outline Drawings POWER TRANSISTOR MODULE i Features • i6 IiJ ± High Voltage # 7 ' J —sfc'f U > 9 ¥ A =t — KF*9/8 • ASO tf'jAi' Including Free Wheeling Diode Excellent Safe Operating Area


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    PDF 2D11002-100 E82988 Ic-100A, 00A/jws bjt 100a 2D11002-100 power BJT 100A power transistor bjt 1000 a TRANSISTOR 0156 Transistor BJT 100A S1m diode ifrd W-J M6 M210

    diode B14A

    Abstract: bjt 100a B14A equivalent 2D11002-120 M210 power BJT 100A B14A
    Text: 2 Ä ID- / I1 1* v i0 / ^2 "- 1 2-Pack BJT 1200 V 100 a 1 ^2 01 / I Outline Drawings s < r7 — Y :7 > i * X 9 3E i > a . — k POWER TRANSISTOR MODULE Features • iS iM ± H igh V olta ge m y \) ij — K rt/R • ASO M S v ,' • In c lu d in g Free W h e e lin g D iode


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    PDF 2D11002-120 E82988 diode B14A bjt 100a B14A equivalent 2D11002-120 M210 power BJT 100A B14A

    bjt 50a

    Abstract: M603 fuji bjt fuji bjt 6-pack power bjt transistor 600v 6di 120 50C-050 transistor and schematic symbols
    Text: FUJI 6-Pack BJT 600 V 50 A 6DI50C-050 [M L S m S O e l £ POWER TRANSISTOR MODULE f '• Outline Drawings LÖÖ^JM 4 18-5 I 18"5""i" 18-5 |fiÖij 4-^5.a ! Features • K r tlt -y i — y f z j i) ' s f ? j • h F E ^ iS ^ ' In c lu d in g Free W h e e lin g D iode


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    PDF 50C-050 E82988 bjt 50a M603 fuji bjt fuji bjt 6-pack power bjt transistor 600v 6di 120 50C-050 transistor and schematic symbols

    IGBT board FUJI

    Abstract: snubber resistance of IGBT thyristor 750vdc l series IGBT 150a 1200v IGBT FUJI module RBSOA circuit of six pack module igbt fuji igbt transistor modules 3rd Generation of 1200V IGBT Modules fuji igbt
    Text: The Design Advantages of a Current Limited Third Generation IGBT Module Jerry Gallagher, Collmer Semiconductor Inc., Dallas, Texas Third generation IGBT modules that include a non-latch-up circuit simplify circuit designs. The NLU limits short circuit currents to simplify


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    ECUV1H080DCN

    Abstract: ECU-E1H330JCQ ECSH1CY105R
    Text: I RFI BMH! H _ P MICRO-DEVICES RF2128P • _ MEDIUM POWER LINEAR AMPLIFIER Typical Applications • PCS Communication Systems Commercial and Consumer Systems • 2.5GHz ISM Band Applications Portable Battery Powered Equipment E POWER AMPLIFIERS • Wireless LANs


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    PDF RF2128P RF2128P 22VDC 150WVDC ECU-V1H080DCN ECU-E1H330JCQ 100A2R4CP150X ECS-H1CY105R ECU-V1H331JCG ATC/1O0A2ROCP15OX ECUV1H080DCN ECSH1CY105R

    ECU-V1H080DCN

    Abstract: ECU-V1H331JCG ecuv1h080dcn ECUV1H331JCG ECU-V1H080
    Text: RF2128PI MICRO ’DEVICES MEDIUM POWER LINEAR AMPLIFIER Typical Applications • PCS Communication Systems Commercial and Consumer Systems • 2.5GHz ISM Band Applications Portable Battery Powered Equipment B POWER AMPLIFIERS • Wireless LANs Product Description


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    PDF RF2128PI RF2128P 45GHz 1900MHz 2200MHz, 100mW 150WVDC ECU-V1H080DCN ECU-E1H330JCO 100A2R4CP150X ECU-V1H331JCG ecuv1h080dcn ECUV1H331JCG ECU-V1H080

    42019 AC

    Abstract: No abstract text available
    Text: RF RF2127 MICRO •DEVICES MEDIUM POWER LINEAR AM PLIFIER Typical A pplications • DECT Cordless Applications Commercial and Consumer Systems • PCS Communication Systems Portable Battery Powered Equipment IL s < cc Product Description LU The RF2127 is a medium power, high efficiency linear


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    PDF RF2127 RF2127 1800MHz 1900MHz, 100mW RF2125 1000pF, 50WVDC 330pF. 42019 AC

    ECUV1H102KBN

    Abstract: ECU-V1H102KBN ECUV1H220JCN panasonic hf series capacitor panasonic ge capacitor panduit MPSS100 RF2125 RF2127 RF2127PCBA ECSH1CY105R
    Text: RFI RF2127 MICRO •DEVICES M ED IU M P O W ER L IN E A R A M P L IF IE R T y p ic a l A p p lic a tio n s • D E C T Cordless Applications Com m ercial and Consum er System s • P C S Communication System s Portable Battery Powered Equipment P ro d u ct D e sc rip tio n


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    PDF RF2127 1800MHz 1900MHz, 100mW RF2125 50WVDC ECU-V1H220JCN PCC220CNTR-ND 10WVDC ECUV1H102KBN ECU-V1H102KBN ECUV1H220JCN panasonic hf series capacitor panasonic ge capacitor panduit MPSS100 RF2127PCBA ECSH1CY105R

    MJ10200

    Abstract: MC13528 MTE200N05 C2785 high speed Zener Diode 200v 200A fet MTE200N06 MR2525L equivalent 200a mosfet MJ-102
    Text: AR133 mi lllililll g M ilM MULTICHIP POWER MOSFETS BEAT BIPOLARS AT HIGH-CURREIUT SWITCHING iMMHi By W arren Schultz Motorola Inc. Power Products Division Reprinted by Permission of ELECTRONIC DESIGN, June 14, 1 9 8 4 . 1984, Hayden Publishing Co., Inc.


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    PDF AR133 MTE200N05 MC14050B MC14528B C27852 MJ10200 MC13528 C2785 high speed Zener Diode 200v 200A fet MTE200N06 MR2525L equivalent 200a mosfet MJ-102

    H331 transistor

    Abstract: fj series capacitor panasonic 980630 ECU-V1H102KBN transistor h331 RF2125 RF2127 RF2127PCBA W0010 ECUV1H102KBN
    Text: RFEÜ RF2127 MICRO-DEVICES M E D IU M POW ER L IN E A R A M P L IF IE R T y p ic a l A p p lic a t io n s • Commercial and Consumer Systems • PCS Communication Systems • Portable Battery Powered Equipment 2 POWER AMPLIFIERS • DECT Cordless Applications


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    PDF RF2127 RF2127 1800M 1900M ECU-V1H102KBN ECU-V1H331JCG ECU-V1H220JCN ECS-H1CY105R 100A160JP150X 100A6R2CP150X H331 transistor fj series capacitor panasonic 980630 transistor h331 RF2125 RF2127PCBA W0010 ECUV1H102KBN

    panasonic ECU-V1H

    Abstract: ECU-V1H "Panasonic" ECU-V1H Panasonic ECUV1H102KBN 980630 S/H0A0872-n55
    Text: >: >:->:


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    PDF 10WVDC 150WVDC Panasonic/ECU-V1H102KBN Panasonic/ECU-V1H331JCQ ECS-H1CY105R 100A160JP150X 00A6R2CP150X MPSS100-3C D/RF2127 panasonic ECU-V1H ECU-V1H "Panasonic" ECU-V1H Panasonic ECUV1H102KBN 980630 S/H0A0872-n55

    33ka5

    Abstract: No abstract text available
    Text: MICRO-DEVICES CDMA/FM TRANSMIT AGC AM PLIFIER Typical Applications • C D M A /FM Cellular Systems General Purpose Linear IF Amplifier • Supports Dual-Mode A M P S/C D M A Portable Battery Powered Equipment • Supports Dual-Mode TACS/CDMA Commercial and Consumer Systems


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    PDF RF2609 IS-95 100-3C 3040-S 100nH 270nH B3040 33ka5

    0805CS-101XKBC

    Abstract: kl2 j2 KSS 1206
    Text: !Ü P H RF2619 F MICRO-DEVICES 3 V CDMA/FM T R A N S M IT A 6 C A M PLIFIER Typical A pplications • 3 V CDMA/FM Cellular Systems General Purpose Linear IF Amplifier • Supports Dual-Mode AM PS/CDM A Portable Battery Powered Equipment • Supports Dual-Mode TACS/CDMA


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    PDF RF2619 RF2619 IS-95 270nH WB3040 RF2609PCBA RF2609410 0805CS-101XKBC kl2 j2 KSS 1206

    Untitled

    Abstract: No abstract text available
    Text: R F U MICRO•DEVICES CDMA/FM TRANSMIT AGC AMPLIFIER Typical Applications • C D M A /F M Cellular Systems General Purpose Linear IF Amplifier • Supports Dual-M ode A M P S /C D M A Portable Battery Powered Equipment • Supports Dual-M ode TA C S/CDM A


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    PDF RF2609 IS-95 RF2609 RF26Q9