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Abstract: No abstract text available
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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Untitled
Abstract: No abstract text available
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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PO 9038
Abstract: gaas fet marking a MAX 8985 pin diagram of 7414 019 triquint d 5287 power FET transistor 2 gigahertz Gp 28 db transistor 5478 01380
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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OT223:
PO 9038
gaas fet marking a
MAX 8985
pin diagram of 7414
019 triquint
d 5287
power FET transistor 2 gigahertz Gp 28 db
transistor 5478
01380
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Untitled
Abstract: No abstract text available
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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CLY5
Abstract: 93 69 MARKING CODE
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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04435
Abstract: CLY 70
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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CLY5
Abstract: MAX 8985 09069 ipc 9702 07293 13.3921
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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OT223
CLY5
MAX 8985
09069
ipc 9702
07293
13.3921
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MARKING 717
Abstract: sot-223 MARKING CODE 718 Power amplifier for mobile phones For sot223
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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Abstract: No abstract text available
Text: CLY10 Datasheet High-Power Packaged GaAs FET Description: The CLY10 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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CLY10
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09917
Abstract: No abstract text available
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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Abstract: No abstract text available
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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Untitled
Abstract: No abstract text available
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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OT223
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Untitled
Abstract: No abstract text available
Text: CLY10 Datasheet High-Power Packaged GaAs FET Description: The CLY10 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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CLY10
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cly10
Abstract: CLY 10
Text: CLY10 Datasheet High-Power Packaged GaAs FET Description: The CLY10 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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CLY10
CLY 10
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cly 10
Abstract: Q62702-L94 CLY 70 GPS05560 SMD MARKING CODE TRANSISTOR 501
Text: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,
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Q62702-L94
OT-223
P-SOT223-4-2
GPS05560
cly 10
Q62702-L94
CLY 70
GPS05560
SMD MARKING CODE TRANSISTOR 501
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transistor smd code marking 561
Abstract: sot-223 MARKING CODE 718 smd marking 271 Sot
Text: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,
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OT-223
Q62702-L99
P-SOT223-4-2
EHT08941
GPS05560
transistor smd code marking 561
sot-223 MARKING CODE 718
smd marking 271 Sot
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WL431003667
Abstract: TRANSISTOR SMD MARKING CODE 703 TRANSISTOR SMD MARKING CODE 723 smd transistor marking p1 TRANSISTOR SMD MARKING CODE 512
Text: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,
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OT-223
Q62702-L94
P-SOT223-4-2
GPS05560
WL431003667
TRANSISTOR SMD MARKING CODE 703
TRANSISTOR SMD MARKING CODE 723
smd transistor marking p1
TRANSISTOR SMD MARKING CODE 512
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transistor smd code marking 561
Abstract: GPS05560 Q62702-L99 s-parameter s11 s12 s21
Text: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,
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Q62702-L99
OT-223
P-SOT223-4-2
EHT08941
GPS05560
transistor smd code marking 561
GPS05560
Q62702-L99
s-parameter s11 s12 s21
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transistor smd 661 752
Abstract: GPS05560 Q62702-L90 high power FET transistor s-parameters TRANSISTOR SMD MARKING CODE p1 smd transistor code 621 marking code 933 SMD Transistor SMD transistor marking P
Text: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,
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OT-223
Q62702-L90
P-SOT223-4-2
EHT08956
GPS05560
transistor smd 661 752
GPS05560
Q62702-L90
high power FET transistor s-parameters
TRANSISTOR SMD MARKING CODE p1
smd transistor code 621
marking code 933 SMD Transistor
SMD transistor marking P
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transistor smd 661 752
Abstract: CLY 30 marking code 933 SMD Transistor TRANSISTOR SMD MARKING CODE p1 GPS05560 Q62702-L90 CLY 5 809 code Marking SOT-223 marking code s21 SMD Transistor
Text: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,
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OT-223
Q62702-L90
P-SOT223-4-2
EHT08956
GPS05560
transistor smd 661 752
CLY 30
marking code 933 SMD Transistor
TRANSISTOR SMD MARKING CODE p1
GPS05560
Q62702-L90
CLY 5
809 code Marking SOT-223
marking code s21 SMD Transistor
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transistor smd code marking 561
Abstract: smd marking 271 Sot GPS05560 Q62702-L99 GAAS FET AMPLIFIER 3400 Mhz TRANSISTOR SMD MARKING CODE 352 smd transistor 718
Text: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device, observe handling precautions!
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OT-223
Q62702-L99
P-SOT223-4-2
EHT08941
GPS05560
transistor smd code marking 561
smd marking 271 Sot
GPS05560
Q62702-L99
GAAS FET AMPLIFIER 3400 Mhz
TRANSISTOR SMD MARKING CODE 352
smd transistor 718
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marking code 933 SMD Transistor
Abstract: transistor smd 661 752 CLY5 high power FET transistor s-parameters
Text: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,
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OT-223
Q62702-L90
P-SOT223-4-2
EHT08956
GPS05560
marking code 933 SMD Transistor
transistor smd 661 752
CLY5
high power FET transistor s-parameters
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GaAs pHEMT LOW SOT-343
Abstract: CLY 2
Text: GaAs Components Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
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OT-363
VQFN-16-2
SCT-598
GaAs pHEMT LOW SOT-343
CLY 2
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N-Channel, Dual-Gate FET
Abstract: CF750 GaAs pHEMT Low Noise MMIC Amplifier sot-343 N-channel dual-gate GaAs MESFET
Text: Ga As Components Infineon ? a c Kn o ! o 9 i a s Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules. 5 Dual-Gate GaAs F E T s.
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OT-363
OT-363
VQFN-16-2
SCT-598
N-Channel, Dual-Gate FET
CF750
GaAs pHEMT Low Noise MMIC Amplifier sot-343
N-channel dual-gate GaAs MESFET
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