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    POWER AMPLIFIER 500 WATT TRANSISTOR CIRCUIT Search Results

    POWER AMPLIFIER 500 WATT TRANSISTOR CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    POWER AMPLIFIER 500 WATT TRANSISTOR CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ELMWOOD SENSORS

    Abstract: AN1308 500 watts 12 VOLTS audio amplifier schematics 500 watts audio amplifier schematics 1000 watts audio amplifier schematics elmwood sensors ltd 300 watts amplifier schematics Motorola design of audio amplifier an1308 12 volt audio amplifier class D schematic ELMWOOD
    Text: Order this document by AN1308/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE 100 and 200 Watt High Fidelity Audio Amplifiers Utilizing a WidebandĆLow Feedback Design AN1308 Prepared by: Andrew Hefley Audio Engineering Consultant INTRODUCTION Over the past two decades many types of solid state, high


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    PDF AN1308/D AN1308 AN1308/D* ELMWOOD SENSORS AN1308 500 watts 12 VOLTS audio amplifier schematics 500 watts audio amplifier schematics 1000 watts audio amplifier schematics elmwood sensors ltd 300 watts amplifier schematics Motorola design of audio amplifier an1308 12 volt audio amplifier class D schematic ELMWOOD

    motorola AN1308

    Abstract: 300 watts audio amplifier schematics 1000 watts audio amplifier schematics power transistor audio amplifier 500 watts circuit diagram Elmwood Sensors an1308 t1z12 elmwood sensors ltd Aham Tor Inc erg3sj100
    Text: Order this document by AN1308/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE 100 and 200 Watt High Fidelity Audio Amplifiers Utilizing a WidebandĆLow Feedback Design AN1308 Prepared by: Andrew Hefley Audio Engineering Consultant INTRODUCTION Over the past two decades many types of solid state, high


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    PDF AN1308/D AN1308 AN1308/D* AN1308/D motorola AN1308 300 watts audio amplifier schematics 1000 watts audio amplifier schematics power transistor audio amplifier 500 watts circuit diagram Elmwood Sensors an1308 t1z12 elmwood sensors ltd Aham Tor Inc erg3sj100

    Untitled

    Abstract: No abstract text available
    Text: 1997 MTT Presentation Stabilizing Mosfet Amplifiers Polyfet Rf Devices S. K. Leong Stabilizing Mosfet Amplifiers • • • • • • • Series Gate Resistance Shunt Gate Resistance Drain Gate Feedback Drain Shunt Resistance Ferrite Loading Gate Circuit


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    Untitled

    Abstract: No abstract text available
    Text: ECP203 PRELIMINARY DATA SHEET 2.0 WATT POWER AMPLIFIER Product Features Applications 2.1 - 2.7GHz 32.5 dBm P1dB High Linearity: 48 dBm OIP3 10 dB Linear Gain Single 5V Supply High Reliabilty Class A or AB operation Basestations and Repeaters Multi-carrier systems


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    PDF ECP203 QFN-16 ECP203 ECP203G ECP203G-500 ECP203G-1000 ECP203D ECP203D-500 ECP203D-1000 QFN-16

    300 watts amplifier schematics

    Abstract: MCH185C102KK power amplifier 500 watt transistor circuit
    Text: ECP103 PRELIMINARY DATA SHEET 1.0 WATT POWER AMPLIFIER Product Features Applications Basestations and Repeaters Multi-carrier systems 2.1-2.7GHz 30.5 dBm P1dB High Linearity: 46 dBm OIP3 High Efficiency: PAE > 40% 11 dB Linear Gain Single 5V Supply High Reliabilty


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    PDF ECP103 QFN-16 ECP103 ECP103G ECP103G-500 ECP103G-1000 ECP103D ECP103D-500 ECP103D-1000 QFN-16 300 watts amplifier schematics MCH185C102KK power amplifier 500 watt transistor circuit

    transistor RF

    Abstract: SLD3091FZ schematic diagram 800 watt power amplifier RF TRANSISTOR 1 WATT
    Text: Advance SLD3091FZ Product Description The SLD3091FZ is a 30 Watt high performance LDMOS transistor designed for operation to 2200MHz. It is an excellent solution for applications requiring high linearity and efficiency at a low cost. The SLD3091FZ is typically used in


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    PDF SLD3091FZ 2200MHz. SLD3091FZ 881MHz EDS-104668 transistor RF schematic diagram 800 watt power amplifier RF TRANSISTOR 1 WATT

    1/C9000 - 60005

    Abstract: B/C9000 - 60005 R/C9000 - 60005
    Text: AN-60-005 APPLICATION NOTE LZY-2+ and LZY-2X+ ULTRA-LINEAR RF AMPLIFIER 500 MHz - 1000 MHz 20 WATTS MIN., 1 dB COMPRESSION 40 dB MIN. GAIN AN-60-005 Rev.: C M150261 (04/14/15) File: AN60005.doc This document and its contents are the properties of Mini-Circuits.


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    PDF AN-60-005 AN-60-005 M150261 AN60005 1/C9000 - 60005 B/C9000 - 60005 R/C9000 - 60005

    16 pin 4x4 amplifier gsm

    Abstract: mch185C102kk MCH185A100DK ECJ-1VF1A105Z
    Text: PRELIMINARY DATA SHEET ECP052 0.5 WATT POWER AMPLIFIER Features Applications 0.8GHz to 1GHz 28.0dBm P1dB High Linearity: 44dBm OIP3 High Efficiency: PAE > 50% 17dB Linear Gain High Reliability Class A or AB operation Basestations and Repeaters CDMA/GSM/TDMA/EDGE


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    PDF ECP052 44dBm QFN-16 ECP052 ECP052G ECP052G-500 ECP052G-1000 ECP052D ECP052D-500 ECP052D-1000 16 pin 4x4 amplifier gsm mch185C102kk MCH185A100DK ECJ-1VF1A105Z

    1000w power amplifier circuit diagram

    Abstract: 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 500 watt mosfet power amplifier circuit diagram 27.12MHz power amplifier APT9701 1000 watt ferrite transformer ar164 hf 800w power Amplifier diagram
    Text: APPLICATION NOTE APT9701 Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz 1 Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz Richard Frey, P.E., RF Applications Engineering, Advanced Power Technology Inc, Bend, OR ABSTRACT directly to a single stage PFC regulated power supply


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    PDF APT9701 12MHz O-247 300VDC AN749, DL110, 1000w power amplifier circuit diagram 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 500 watt mosfet power amplifier circuit diagram 27.12MHz power amplifier APT9701 1000 watt ferrite transformer ar164 hf 800w power Amplifier diagram

    G9131

    Abstract: G9131-33T24U G9131-33T73U SOT 89 GMT marking 12 T7 SOT-89
    Text: G9131 Global Mixed-mode Technology Inc. 300mA Low-Dropout Linear Regulators Features General Description „55µA Quiescent Current „Guaranteed 300mA Output Current „Dropout Voltage is 70mV @ 50mA Load „Over-Temperature Protection and Short-Circuit The G9131 is a low supply current, low dropout linear


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    PDF G9131 300mA G9131 G9131-33T24U G9131-33T73U SOT 89 GMT marking 12 T7 SOT-89

    16 pin 4x4 amplifier gsm

    Abstract: amplifier QFN16 MCH185A3R3CK
    Text: ECP100 PRELIMINARY DATA SHEET 1.0 WATT POWER AMPLIFIER Product Features Applications Basestations and Repeaters CDMA/GSM/TDMA/EDGE PCS/CDMA2000/IMT2000/UMTS Multi-carrier systems 100 - 2300MHz 31 dBm P1dB High Linearity: 47 dBm OIP3 High Efficiency: PAE > 45%


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    PDF ECP100 2300MHz 96GHz PCS/CDMA2000/IMT2000/UMTS QFN-16 ECP100 ECP100G ECP100G-500 ECP100G-1000 ECP100D 16 pin 4x4 amplifier gsm amplifier QFN16 MCH185A3R3CK

    Untitled

    Abstract: No abstract text available
    Text: ECP200 PRELIMINARY DATA SHEET 2.0 WATT POWER AMPLIFIER Product Features Applications 100 - 2300MHz 33 dBm P1dB High Linearity: 49 dBm OIP3 11 dB Linear Gain at 1.96GHz Single 5V Supply High Reliabilty Class A or AB operation Basestations and Repeaters CDMA/GSM/TDMA/EDGE


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    PDF ECP200 2300MHz 96GHz PCS/CDMA2000/IMT2000/UMTS QFN-16 ECP200 ECP200G ECP200G-500 ECP200G-1000 ECP200D

    Stackpole 57-9322-11

    Abstract: EB-27 motorola 2N6368 ecom-2989 Granberg Design of H. F. Wideband Power Transformers AN593 Broadband Linear Power Amplifiers Using Push-Pull Transistors EB-32 complementary symmetry amplifier Indiana general ferrite core 2N6367
    Text: Order this document by AN593/D MOTOROLA SEMICONDUCTOR 33333 APPLICATION NOTE AN593 BROADBAND LINEAR POWER AMPLIFIERS USING PUSH-PULL TRANSISTORS Prepared by: Helge Granberg RF Circuits Engineering INTRODUCTION Linear power amplifier operation, as used in SSB


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    PDF AN593/D AN593 Stackpole 57-9322-11 EB-27 motorola 2N6368 ecom-2989 Granberg Design of H. F. Wideband Power Transformers AN593 Broadband Linear Power Amplifiers Using Push-Pull Transistors EB-32 complementary symmetry amplifier Indiana general ferrite core 2N6367

    transistor MRF321

    Abstract: JMC5201 redcap erie redcap capacitors vk200 coil erie redcap vk200 1N4001 MRF321 case 244-04
    Text: Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc


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    PDF MRF321/D MRF321 transistor MRF321 JMC5201 redcap erie redcap capacitors vk200 coil erie redcap vk200 1N4001 MRF321 case 244-04

    Helitrim

    Abstract: Helitrim pot model 91 Helitrim Model 91 CRT MONITOR SCHEMATIC DIAGRAM monochrome monochrome monitor schematic HELITRIM 55 LM1201N lm1201 HP8082 C1996
    Text: LM1201 Video Amplifier System Y General Description The LM1201 is a wideband video amplifier system intended for high resolution monochrome or RGB monitor applications In addition to the wideband video amplifier the LM1201 contains a gated differential input black level clamp


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    PDF LM1201 LM1203 Helitrim Helitrim pot model 91 Helitrim Model 91 CRT MONITOR SCHEMATIC DIAGRAM monochrome monochrome monitor schematic HELITRIM 55 LM1201N HP8082 C1996

    C1608X7R1H104KT

    Abstract: K 2645 schematic circuit RESISTOR AXIAL transistor r29 on semiconductor C1608X7R1H104KT TDK TSL1315S-101K2R5 MMSZ5248BT1 FQP12N60 C3216X5R1A475KT K 2645 schematic
    Text: AND8106/D 100 Watt, Universal Input, PFC Converter ON Semiconductor http://onsemi.com APPLICATION NOTE General Description This 100 watt converter demonstrates the wide range of features found on the NCP1650. This chip is capable of controlling PFC converters well into the kilowatt range.


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    PDF AND8106/D NCP1650. C1608X7R1H104KT K 2645 schematic circuit RESISTOR AXIAL transistor r29 on semiconductor C1608X7R1H104KT TDK TSL1315S-101K2R5 MMSZ5248BT1 FQP12N60 C3216X5R1A475KT K 2645 schematic

    tip420

    Abstract: 12 volts 50 watt stereo amplifier schematic diagram LM391N 90 schematic diagram 800 watt power amplifier free d LM391N lm391 LM391N-100 LM391N equivalent 2N5880 equivalent TIP41A equivalent
    Text: LM391 Audio Power Driver General Description Features The LM391 audio power driver is designed to drive external power transistors in 10 to 100 watt power amplifier designs High power supply voltage operation and true high fidelity performance distinguish this IC The LM391 is internally protected for output faults and thermal overloads circuitry providing output transistor protection is user programmable


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    PDF LM391 tip420 12 volts 50 watt stereo amplifier schematic diagram LM391N 90 schematic diagram 800 watt power amplifier free d LM391N LM391N-100 LM391N equivalent 2N5880 equivalent TIP41A equivalent

    LM391N 90

    Abstract: LM391N equivalent schematic diagram 800 watt power amplifier free d irc pw5 LM391N-100 12 volts 50 watt stereo amplifier schematic diagram 2N5880 equivalent LM391n lm391n amplifier schematic diagram 500 watt power amplifier free d
    Text: LM391 Audio Power Driver General Description Features The LM391 audio power driver is designed to drive external power transistors in 10 to 100 watt power amplifier designs High power supply voltage operation and true high fidelity performance distinguish this IC The LM391 is internally protected for output faults and thermal overloads circuitry providing output transistor protection is user programmable


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    PDF LM391 LM391N 90 LM391N equivalent schematic diagram 800 watt power amplifier free d irc pw5 LM391N-100 12 volts 50 watt stereo amplifier schematic diagram 2N5880 equivalent LM391n lm391n amplifier schematic diagram 500 watt power amplifier free d

    rca transistor manual

    Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
    Text: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi­ conductor devices and circuits. It will be useful to engineers, service technicians, edu­ cators, students, radio amateurs, hobbyists, and others technically interested in transis­


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    lg crt monitor rgb cable

    Abstract: lg crt monitor circuit diagram Helitrim CRT MONITOR SCHEMATIC DIAGRAM monochrome HP1120A LG crt monitor PCB diagram crt monitor block diagram lg 15 lm1201 Helitrim Model 91 LM1201N
    Text: LM1201 £3 National ÆM Semiconductor LM1201 Video Amplifier System General Description The LM1201 is a wideband video amplifier system intended for high resolution monochrome or RGB monitor applica­ tions. In addition to the wideband video amplifier the


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    PDF LM1201 LM1201 LM1203 F/15V, LM1201. lg crt monitor rgb cable lg crt monitor circuit diagram Helitrim CRT MONITOR SCHEMATIC DIAGRAM monochrome HP1120A LG crt monitor PCB diagram crt monitor block diagram lg 15 Helitrim Model 91 LM1201N

    vk200 coil

    Abstract: FERROXCUBE VK200 jmc 5201
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 1 0 Watts


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    PDF MRF321 vk200 coil FERROXCUBE VK200 jmc 5201

    Untitled

    Abstract: No abstract text available
    Text: data sheet UTO-1025, UTC-1025 1 Watt Amplifier April, 1990 Q a v a n tek APPLICATIONS FEATURES • • • • Bench Top UHF/VHF Transmitters Communication Circuits Instrumentation Mobile Radio 1 Watt Output Wide Bandwidth: 20-1000 MHz Low Noise Figure: 3dB Typ.


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    PDF UTO-1025, UTC-1025

    jmc 5201

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPH Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts


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    PDF MRF321 jmc 5201

    rohm mtbf

    Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this


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    PDF 1S211 1S22I MRF20030 rohm mtbf kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861