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    POWER AMPLIFER CIRCUIT Search Results

    POWER AMPLIFER CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    POWER AMPLIFER CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TDA8844

    Abstract: ic TDA8842 TDA8842 OF IC 78xx regulator Samsung TV tuners module LMC556 LM317 toshiba uA4558 uhf linear amplifier module 5w KA7500
    Text: Function Pins Package IK Semi OP AMP Dual Operational Amplifer Dual Operational Amplifer Dual Operational Amplifer 8 8 8 DIP/SOP/SIP DIP/SOP/SIP DIP/SOP IL358 IL4558 IL4560 Dual Operational Amplifer Quad Operational Amplifer Low Power J-FET Dual Operational Amplifer


    Original     		PDF IL358 IL4558 IL4560 IL4580 IL324 IL062 IL072 IL082 IL1776C IL1458 TDA8844 ic TDA8842 TDA8842 OF IC 78xx regulator Samsung TV tuners module LMC556 LM317 toshiba uA4558 uhf linear amplifier module 5w KA7500

    1000w power AMPLIFIER pcb circuit

    Abstract: 2000w power amplifier 2000w audio power amplifier audio amplifier 1000w class d 1000w amplifier 600W TRANSISTOR AUDIO AMPLIFIER 1000w power amplifier power amplifier for sonar 150W TRANSISTOR AUDIO AMPLIFIER 300W TRANSISTOR AUDIO AMPLIFIER
    Text: CLASS D AUDIO AMPLIFER MODULE SDV1005-600: 600W RMS, CLASS D, AUDIO AMPLIFER MASTER MODULE FEATURES • • • • • • • • • • • • • • • • HIGH POWER: 600W RMS1 HIGH EFFICIENCY ~90% LOW DISTORTION: <0.3% THD OPEN LOOP SIMPLE POWER SUPPLY REQUIREMENT2


    Original     		PDF SDV1005-600: 1000w power AMPLIFIER pcb circuit 2000w power amplifier 2000w audio power amplifier audio amplifier 1000w class d 1000w amplifier 600W TRANSISTOR AUDIO AMPLIFIER 1000w power amplifier power amplifier for sonar 150W TRANSISTOR AUDIO AMPLIFIER 300W TRANSISTOR AUDIO AMPLIFIER

    1000w power AMPLIFIER pcb circuit

    Abstract: 800w power amplifier stereo 300W TRANSISTOR AUDIO AMPLIFIER 150W TRANSISTOR AUDIO AMPLIFIER ECM-300H 1000W Stereo Audio Power Amplifier SDV1015-600 1000W TRANSISTOR AUDIO AMPLIFIER 300w amplifier 300w stereo amplifier
    Text: CLASS D AUDIO AMPLIFER MODULE ECM-300H 300W RMS CLASS D AUDIO AMPLIFER MODULE FEATURES • • • • • • • • • • • • • • • • • HIGH POWER: 300W RMS1 HIGH EFFICIENCY >90% HIGH SWITCHING FREQUENCY: 450KHz. LOW DISTORTION: <0.3% THD OPEN LOOP


    Original     		PDF ECM-300H 450KHz. 1000w power AMPLIFIER pcb circuit 800w power amplifier stereo 300W TRANSISTOR AUDIO AMPLIFIER 150W TRANSISTOR AUDIO AMPLIFIER ECM-300H 1000W Stereo Audio Power Amplifier SDV1015-600 1000W TRANSISTOR AUDIO AMPLIFIER 300w amplifier 300w stereo amplifier

    1000w power AMPLIFIER pcb circuit

    Abstract: 1000W TRANSISTOR AUDIO AMPLIFIER 2000W Stereo Audio Power Amplifier 600W TRANSISTOR AUDIO AMPLIFIER 2000w audio power amplifier 1000W TRANSISTOR POWER AMPLIFIER 2000w audio amplifier 2000w CLASS D AMPLIFIER 300W TRANSISTOR AUDIO AMPLIFIER 2000w power amplifier
    Text: CLASS D AUDIO AMPLIFER MODULE ECM-600H 600W RMS CLASS D AUDIO AMPLIFER MODULE FEATURES • • • • • • • • • • • • • • • • • HIGH POWER: 600W RMS1 HIGH EFFICIENCY ~90% HIGH SWITCHING FREQUENCY: 450KHz. LOW DISTORTION: <0.3% THD OPEN LOOP


    Original     		PDF ECM-600H 450KHz. 1000w power AMPLIFIER pcb circuit 1000W TRANSISTOR AUDIO AMPLIFIER 2000W Stereo Audio Power Amplifier 600W TRANSISTOR AUDIO AMPLIFIER 2000w audio power amplifier 1000W TRANSISTOR POWER AMPLIFIER 2000w audio amplifier 2000w CLASS D AMPLIFIER 300W TRANSISTOR AUDIO AMPLIFIER 2000w power amplifier

    2SA1046

    Abstract: 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275


    Original     		PDF 2N6274 2N6275 2N6277 2N6377 2N6277* POWER32 TIP73B TIP74 2SA1046 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100

    2N6277

    Abstract: 2N6274 2N6275 2N6277 applications transistor 2N6274 1N3879 2N6377 MOTOROLA 2N6277
    Text: MOTOROLA Order this document by 2N6274/D SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274


    Original     		PDF 2N6274/D 2N6274 2N6275 2N6277 2N6377 2N6274/D* 2N6277 2N6274 2N6275 2N6277 applications transistor 2N6274 1N3879 MOTOROLA 2N6277

    HN4C08J

    Abstract: No abstract text available
    Text: HN4C08J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C08J Unit: mm Low Frequency Power Amplifer Applications Power Switching Application High DC Current Gain : hFE = 100~320 Low Saturation Voltage : VCE(sat)=0.4V (Max.) : (IC = 500mA , IB = 20mA)


    Original     		PDF HN4C08J 500mA HN4C08J

    HN4A08J

    Abstract: No abstract text available
    Text: HN4A08J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A08J Unit: mm Low Frequency Power Amplifer Applications Power Switching Application High DC Current Gain : hFE = 100~320 Low Saturation Voltage : VCE(sat)= −0.4V (Max.) : (IC = −500mA , IB = −20mA)


    Original     		PDF HN4A08J -500mA -20mA) HN4A08J

    Untitled

    Abstract: No abstract text available
    Text: HN4C08J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C08J Unit: mm Low Frequency Power Amplifer Applications Power Switching Application z High DC Current Gain : hFE = 100~320 z Low Saturation Voltage : VCE(sat)=0.4V (Max.) : (IC = 500mA , IB = 20mA)


    Original     		PDF HN4C08J 500mA

    MJE371

    Abstract: MJE-371 MJE521
    Text: SavantIC Semiconductor Product Specification MJE371 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type MJE521 APPLICATIONS ·For use in general-purpose amplifer and switching circuits, ·Recommended for use in 5 to 20 W audio amplifiers utilizing complementary


    Original     		PDF MJE371 O-126 MJE521 -100mA MJE371 MJE-371 MJE521

    HN4C08J

    Abstract: No abstract text available
    Text: HN4C08J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C08J Unit: mm Low Frequency Power Amplifer Applications Power Switching Application z High DC Current Gain : hFE = 100~320 z Low Saturation Voltage : VCE(sat)=0.4V (Max.) : (IC = 500mA , IB = 20mA)


    Original     		PDF HN4C08J 500mA HN4C08J

    HN4A08J

    Abstract: pnp amplifer
    Text: HN4A08J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A08J Low Frequency Power Amplifer Applications Power Switching Application z z Unit: mm High DC Current Gain : hFE = 100~320 Low Saturation Voltage : VCE(sat)= −0.4V (Max.) : (IC = −500mA , IB = −20mA)


    Original     		PDF HN4A08J -500mA -20mA) HN4A08J pnp amplifer

    electrolytic capacitor 2200 uf

    Abstract: No abstract text available
    Text: PTMA180402EL PTMA180402FL Wideband RF LDMOS Integrated Power Amplifer 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt LDMOS integrated circuits intended for base station applications. They can be used for all typical modulation formats


    Original     		PDF PTMA180402EL PTMA180402FL 40-watt H-33265-8 H-34265-8 electrolytic capacitor 2200 uf

    Untitled

    Abstract: No abstract text available
    Text: HN4A08J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A08J Low Frequency Power Amplifer Applications Power Switching Application z z Unit: mm High DC Current Gain : hFE = 100 to 320 Low Saturation Voltage : VCE(sat) = −0.4V (max) (IC = −500mA , IB = −20mA)


    Original     		PDF HN4A08J 500mA

    Untitled

    Abstract: No abstract text available
    Text: HN4A08J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A08J Low Frequency Power Amplifer Applications Power Switching Application z z Unit: mm High DC Current Gain : hFE = 100~320 Low Saturation Voltage : VCE(sat)= −0.4V (Max.) : (IC = −500mA , IB = −20mA)


    Original     		PDF HN4A08J -500mA -20mA)

    CAPACITOR 2.2UF THROUGH HOLE

    Abstract: d-class amplifier gaas Low Noise Amplifier power amplifier circuit diagram with pcb layout surface mounted fuse, moisture sensitivity level ACPM-7881 ACPM-7881-BLK ACPM-7881-TR1 J-STD-033 coal
    Text: ACPM - 7881 W-CDMA Power Amplifer Data Sheet Description Features The ACPM-7881 is a high performance W-CDMA power amplifier module offered in a 4x4x1.1mm package. Designed around Avago Technologies’ GaAs Enhancement Mode pHEMT process, the ACPM-7881 offers premium


    Original     		PDF ACPM-7881 5989-1894EN CAPACITOR 2.2UF THROUGH HOLE d-class amplifier gaas Low Noise Amplifier power amplifier circuit diagram with pcb layout surface mounted fuse, moisture sensitivity level ACPM-7881-BLK ACPM-7881-TR1 J-STD-033 coal

    PTMA180402M

    Abstract: PTMA180402M V1 marking
    Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifer 40 W, 1800 – 2000 MHz Description The PTMA180402M is a matched, wideband 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications


    Original     		PDF PTMA180402M PTMA180402M 40-watt 20-pin, PG-DSO-20-63 50-ohm PTMA180402M V1 marking

    a 70084 transistor

    Abstract: 0.9112 data sheet IC 7408 IC 7408 DATASHEET a 70084 nec 8705 NE461M02 NE46M02
    Text: California Eastern Laboratories TECHNICAL NOTE1 TN1031 Medium Power Wideband Amplifer for MMDS Application Introduction Designers of high-volume commercial microwave subsystems share common goals: high performance, low cost and ease of manufacturability. This technical note describes the process


    Original     		PDF TN1031 a 70084 transistor 0.9112 data sheet IC 7408 IC 7408 DATASHEET a 70084 nec 8705 NE461M02 NE46M02

    XE1205

    Abstract: capacitor npo NESG250134 1N4148 0603 exs00a HMC595 capacitor 1nF 0402 0915LP15B026 AN12050 RF TRANSISTOR 10GHZ
    Text: AN1205.04 ADVANCED COMMUNICATIONS & SENSING FINAL Application Note AN1205.04 250mW Power Amplifer Platform with the XE1205 GENERAL DESCRIPTION KEY PRODUCT FEATURES The XE1205 is an integrated transceiver operating in the 433, 868 and 915 MHz license-free ISM Industrial,


    Original     		PDF AN1205 250mW XE1205 XE1205 24dBm) Part15 ISO9001 capacitor npo NESG250134 1N4148 0603 exs00a HMC595 capacitor 1nF 0402 0915LP15B026 AN12050 RF TRANSISTOR 10GHZ

    Class D RF amplifer

    Abstract: PTMA080302M
    Text: Preliminary PTMA080302M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifer 30 W, 700 – 1000 MHz Description The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation


    Original     		PDF PTMA080302M PTMA080302M 30-watt, 20-lead, PTMA080302M* PG-DSO-20 P-SSOP-20] Class D RF amplifer

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SGL-0622Z Pb RoHS Compliant & Green Package Product Description The SGL-0622 is a low power, high gain, fully matched LNA designed for 0.1 - 4GHz operation. This LNA is designed for low power, 2.7 to 3.6V battery operation. This amplifer is fully matched and requires only 4-5


    Original     		PDF SGL-0622Z SGL-0622 SGL-0622Z EDS-104519

    2n6277

    Abstract: 2N6274 2N6275 MOTOROLA 2N6277 transistor 2N6274
    Text: MOTOROLA Order this document by 2N6274/D SEMICONDUCTOR TECHNICAL DATA 2N6274 2N6275 2N6277* High-Power NPN Silicon Transistors . . . designed for use in industrial—military power amplifer and switching circuit applications. • • • • • High Collector Emitter Sustaining —


    OCR Scan     		PDF 2N6274/D 2N6274 2N6275 2N6277 2N6377-79 2N6274 2N6275 2N6277* MOTOROLA 2N6277 transistor 2N6274

    2294a

    Abstract: No abstract text available
    Text: PACIFIC DATA SHEET MONOLITHICS n_n_o_o_R _n PM2102A 0 1m m 900 MHz Low Voltage, High Efficiency GaAs MMIC Power Amplifer Features: Applications: • • • • • • • • 3.0 Volt Supply +28 dBm Output Power 50% Efficiency 16 Pin SOIC Package Commercial Products


    OCR Scan     		PDF PM2102A PM2102A PM2102, 40H-732-800( 2294a

    2n6277

    Abstract: ts 3110 TRANSISTOR itt500 2N6274 transistor 6277 08/bup 3110 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA H ig h -P o w e r NPN S ilicon T ran sisto rs 2N 6274 2N 6275 2N 6277* . . . designed for use In Industrial-military power amplifer and switching circuit applications. *Motorola Prtf*rr»d 0*v1c* • High Collector Emitter Sustaining —


    OCR Scan     		PDF 2N6274 2N6275 2N6277 2N6377-7uration 2n6277 ts 3110 TRANSISTOR itt500 2N6274 transistor 6277 08/bup 3110 transistor