fusible resistor
Abstract: fusible fusible fused resistor polysilicon fuse resistor AAAA fusible fuse resistor
Text: Fusible Links June 1995 Features Applications • Made with Polysilicon one minimum square ~ 50W • Resistor Trimming • Programming Applications • Easy and Fast Tester Programmable (~10 ms) • Device Identification / Serial Number • Typical Power Supply Required for 2 µm width:
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fusible
Abstract: fusible fuse resistor Links passivation resistor trimming
Text: Fusible Links October 1995 Features Applications • • • • • • • Made with Polysilicon one minimum square ~ 50ohms Easy and Fast Tester Programmable (~10 ms) Typical Power Supply Required for 2 µm width: 10 volts Proven Reliability Resistor Trimming
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50ohms)
fusible
fusible fuse resistor
Links
passivation
resistor trimming
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Untitled
Abstract: No abstract text available
Text: One Time Programming Features • Made with Polysilicon one minimum square ~ 50 Ohms • Easy and Fast Tester Programmable (~10 ms) • Typical Power Supply Required for 2 µm width: 10 volts • Proven Reliability Description Fusible links can be designed in all Mitel CMOS processes to
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XH035 library
Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3
Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and
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XA035
XA035
35-micron
XH035
XH035 library
depl
"X-Fab" Core cell library
nmos transistor 0.35 um
cmos transistor 0.35 um
CMOS spice model
Q100
analog devices transistor tutorials
MOS RM3
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cmos transistor 0.35 um
Abstract: 0.35Um c035 ZENER C035 5V IMD2 transistor bsim3v3 polysilicon 20v zener diode 3.3v zener C035
Text: 0.35µ µm 5V / 3.3V CMOS Process ID: SL [C035] Applications Main Process Flow • Interfacing high density industry- • P Substrate standard 0.35um core logic to 5V • LOCOS Field Oxidation
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SG 1050
Abstract: C06 60V polysilicon fuse
Text: 0.6µ µm 60V CMOS Process ID: SG [C06] Applications Main Process Flow • Automotive, including 42V standard. • P Substrate • HV Well Formation • LOCOS Field Oxidation • Twin Retrograde Wells
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MOS RM3
Abstract: No abstract text available
Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing
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XO035
XO035
35-micron
MOS RM3
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1 kilo ohm resistor specifications
Abstract: RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM
Text: Standard Features • • • • • • • • 3.3V CMOS Transistors NPN Transistors Lateral PNP Transistors Analog Resistors Mono-Silicon Capacitor Schottky Diode Poly Fusing Element Multilevel Metallization-Metal Layers 1-3 Optional Features • • •
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AT46700
1 kilo ohm resistor specifications
RESISTOR 10 KILO OHM
100 KILO OHM RESISTOR
atmel 802
polysilicon resistor
atmel 813
1 kilo ohm resistor
10 kilo ohm resistor
3.3 kilo ohm resistor
RESISTOR 1 KILO OHM
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180NM mos
Abstract: 180NM IBM 180NM aluminium 6351 IBM efuse 180-nm polysilicon resistor International CMOS Technology
Text: High-quality imaging for a wide range of applications Foundry technologies 180-nm CMOS image sensor IBM Global Engineering Solutions Highlights offers a leading-edge CMOS image sensor CIMG technology based on Standard features: Optional features: IBM’s industry-standard 180-nm CMOS
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180-nm
TGD01612-USEN-07
180NM mos
180NM IBM
180NM
aluminium 6351
IBM efuse
polysilicon resistor
International CMOS Technology
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130nm CMOS
Abstract: ibm 130nm CMOS IBM efuse cmos IMAGE SENSOR 180-nm 130nm 180NM mos 180NM linear cmos camera SENSOR
Text: High-quality imaging for small format applications Foundry technologies 130-nm/180-nm CMOS image sensor CIMG7HY IBM Global Engineering Solutions offers Highlights a leading-edge CMOS image sensor CIMG technology based on IBM’s Standard features: Optional features:
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130-nm/180-nm
130-nm
180-nm
TGD03007-USEN-02
130nm CMOS
ibm 130nm CMOS
IBM efuse
cmos IMAGE SENSOR
180-nm
130nm
180NM mos
180NM
linear cmos camera SENSOR
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180-nm
Abstract: 180NM mos CMOS/0.18-um CMOS technology
Text: High-quality imaging for a wide range of applications Foundry technologies 180-nm CMOS image sensor IBM Semiconductor solutions offers a Highlights leading-edge CMOS image sensor CIMG technology based on IBM’s Standard features: Optional features: •
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180-nm
TGD01612-USEN-02
180NM mos
CMOS/0.18-um CMOS technology
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ASX 12 D Germanium Transistor
Abstract: 1394 audio subunit domino logic,dynamic logic ibm 6X86MX IBM-6x86MX Japan dvd cjc Transistor Data Book nand flash HET PR333 PR300 APPLE LM INVERTER
Text: v ol 4 3 ume A publication of IBM Microelectronics IBM’s Blue Logic Strategy In This Issue Third Quarter 1998, Vol. 4, No.3 1 IBM’s Blue Logic Strategy 4 High-Speed Design Styles Leverage IBM Technology Prowess 8 Low-Power Methodology and Design Techniques
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XH035
Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3
Text: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target
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XH035
XH035
35-micron
mos rm3 data
nmos transistor 0.35 um
MOS RM3
"X-Fab" Core cell library
bsim3v3
jfet wn 428
PHVC
polysilicon resistor
bsim3
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Untitled
Abstract: No abstract text available
Text: ST1200 256 BITS ONE TIME PROGRAMMABLE EPROM WITH LOCK OUT BRIEF DATA • ■ ■ ■ ■ ■ ■ 256 X 1 ORGANIZATION 96 BITS PROTECTED IN WRITE MODE BY LOCK-OUT FUSE 5V VCC POWER SUPPLY AND 21V VPP PROGRAMMING VOLTAGE 85 MW IN READ MODE POWER ON RESET VERY HIGH RELIABILITY LEVEL
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ST1200
ST1200
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T1200
Abstract: polysilicon fuse OR-SMA-R
Text: SGS-THOMSON m ST1200 256 BITS ONE TIME PROGRAMMABLE EPROM WITH LOCK OUT BRIEF DATA 256 X 1 ORGANIZATION 96 BITS PROTECTED IN WRITE MODE BY LOCK-OUT FUSE Figure 1 Delivery forms 5V VCC POWER SUPPLY AND 21V VPP PROGRAMMING VOLTAGE 85 MW IN READ MODE POWER ON RESET
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ST1200
ST1200
T1200
polysilicon fuse
OR-SMA-R
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74LS04
Abstract: 74ls04 dip specification of IC 74ls04 20-PIC NOT gate 74LS04 DS1000 DS1000-IND DS1005 DS1007 DS1010
Text: Application Note 14 Design Considerations for All-Silicon Delay Lines www.dalsemi.com SILICON DELAY LINES VS. HYBRID L-C NETWORKS Figure 1 shows internal views of a typical 5-tap hybrid delay line and its silicon counterpart. A hybrid is manufactured using a commercially available hex inverter DIP e.g., 74LS04 with a small PC board
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74LS04)
DS1007,
74LS04
74ls04 dip
specification of IC 74ls04
20-PIC
NOT gate 74LS04
DS1000
DS1000-IND
DS1005
DS1007
DS1010
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Untitled
Abstract: No abstract text available
Text: Zero-Drift, Single-Supply, Sensor Signal Amplifier with Digitally Programmable Gain and Offset a Preliminary Technical Data AD8555 with a resolution of better than 0.4% of the difference between VDD and VSS. A lockout trim after gain and offset adjustment
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AD8555
50nV/Â
AD8555AR
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Untitled
Abstract: No abstract text available
Text: Zero-Drift, Single-Supply, Sensor Signal Amplifier with Digitally Programmable Gain and Offset a Preliminary Technical Data AD8555 supply voltage variations. Output offset voltage can be adjusted with a resolution of better than 0.4% of the difference between
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DS-1100
Abstract: 74ls04 dip 74LS04 Hex Inverter definition 74LS04 DS-1135 74LS04 NOT gate IC data sheet 74LS04 NOT gate 74LS04 sample 74LS04 DS1000-IND
Text: OSCILLATORS/DELAY LINES/TIMERS/COUNTERS Feb 21, 2002 App Note 14: Design Considerations for AllSilicon Delay Lines This application brief discusses the architectural and structural differences between solid-state and hybrid delay lines. In many cases, solid-state delay
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DS1007,
DS1007:
DS1100:
DS1110:
DS1135:
DS-1100
74ls04 dip
74LS04 Hex Inverter definition
74LS04
DS-1135
74LS04 NOT gate
IC data sheet 74LS04
NOT gate 74LS04
sample 74LS04
DS1000-IND
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AD8555
Abstract: AD8555AR otp polyfuse
Text: Zero-Drift, Single-Supply, Sensor Signal Amplifier with Digitally Programmable Gain and Offset a Preliminary Technical Data AD8555 with a resolution of better than 0.4% of the difference between VDD and VSS. A lockout trim after gain and offset adjustment
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AD8555
AD8555AR
PR04598-0-1/04
AD8555
otp polyfuse
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74LS04 Hex Inverter definition
Abstract: 74ls04 dip ttl cmos advantages disadvantages 74LS04 DS-1100 Appnote14 TTL 74ls04 data DS1005 DS1100 DS1110
Text: Maxim > App Notes > Oscillators/Delay Lines/Timers/Counters Keywords: DS1100, DS1135, DS1110, delay line, hybrid delay line, digital delay line, FAQ Sep 30, 2002 APPLICATION NOTE 14 Design Considerations for All-Silicon Delay Lines Abstract: This application brief discusses the architectural and structural differences between solid-state and
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DS1100,
DS1135,
DS1110,
DS1100:
DS1110:
DS1135:
com/an14
APP14,
Appnote14,
74LS04 Hex Inverter definition
74ls04 dip
ttl cmos advantages disadvantages
74LS04
DS-1100
Appnote14
TTL 74ls04 data
DS1005
DS1100
DS1110
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AD8557
Abstract: lfcsp_VQ package otp polyfuse MO-220-VGGC MS-012-AA
Text: Digitally Programmable Sensor Signal Amplifier AD8557 Preliminary Technical Data FEATURES APPLICATIONS Very low offset voltage: 10 V max over temperature Very low input offset voltage drift: 50 nV/°C max High CMRR: 96 dB min Digitally programmable gain and output offset voltage
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AD8557
AD8557AR
AD8557AR-REEL
AD8557AR-REEL7
AD8557AR-EVAL
AD8557ACP-R2
AD8557ACP-REEL
AD8557ACP-REEL7
16-Lead
AD8557
lfcsp_VQ package
otp polyfuse
MO-220-VGGC
MS-012-AA
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antifuse
Abstract: actel act1 family ANTIFUSE-based actel antifuse programming technology
Text: Back Actel and the Antifuse Page 1 of 5 Actel and the Antifuse • • • • • • • • Introduction Antifuse vs Memory-based Programmable Logic Antifuse Technology Evaluating Antifuse Alternatives User Benefits of Actel's PLICE Technology Future Directions in Antifuse Technology
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Abstract: No abstract text available
Text: 0.35 m Process Family: XA035 0.35 Micron High Temperature Modular CMOS Technology DESCRIPTION The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and Industrial products with temperature range up to
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XA035
XA035
35-micron
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