Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    POINT CONTACT DIODE INTRODUCTION Search Results

    POINT CONTACT DIODE INTRODUCTION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    POINT CONTACT DIODE INTRODUCTION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Melles Griot Laser Diode driver

    Abstract: Melles Griot DIODE LASER diode laser power supply melles griot melles griot laser 2 Wavelength Laser Diode point contact diode introduction Melles Griot 56 Melles Melles Griot diode laser
    Text: Chpt. 45 Final 9/8/99 10:35 AM Page 45.10 Introduction to Lasers Available in: ✔ Production Quantities ✔Custom Configurations Helium Neon Lasers Ion and Helium Cadmium Lasers Diode-Pumped Solid State-Lasers Compact Diode Laser Point/Line Projectors 56 DIB and 56 DIL point/line projectors from Melles Griot feature rugged construction at an economical price. They are ideal for


    Original     		PDF 572/P1 Melles Griot Laser Diode driver Melles Griot DIODE LASER diode laser power supply melles griot melles griot laser 2 Wavelength Laser Diode point contact diode introduction Melles Griot 56 Melles Melles Griot diode laser

    IEC-100-4-2

    Abstract: AP-209 AP-208 DN006 IEC-1000-4-2 PACDN002 PACDN004 PACDN006 PACDN007 IEC 1000-4-2 ESD
    Text: AP-209 Application Note CALIFORNIA MICRO DEVICES Design Considerations for ESD Protection Using ESD Protection Diode Arrays Introduction As electronic appliances become more pervasive, and with the continuing trend to scale transistor sizes down to pack more performance and functions into a silicon die,


    Original     		PDF AP-209 IEC-1000-4-2 18channel IEC-100-4-2 AP-209 AP-208 DN006 IEC-1000-4-2 PACDN002 PACDN004 PACDN006 PACDN007 IEC 1000-4-2 ESD

    30g 122 igbt

    Abstract: SEMIKRON type designation PCIM 176 display CALCULATION SemiSel 3.1 PCIM 176 pure sinus inverter circuit 60749 IGBT cross reference semikron CALCULATION SemiSel PCIM 95
    Text: SEMiX - Technical Explanations SEMiX ® IGBT Modules & Bridge Rectifier Family Technical Explanations Version 2.0 / January 2008 Christian Daucher 1 Version 2.0 2008-01-22 by SEMIKRON SEMiX® - Technical Explanations Content 1 Introduction . 3


    Original     		PDF

    AN1028

    Abstract: AN-1028 DV240 fluke 52
    Text: National Semiconductor Application Note 1028 June 2001 INTRODUCTION As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus the purpose of this paper is to aid the user in


    Original     		PDF OT-223 AN-1028 AN1028 AN-1028 DV240 fluke 52

    AN1028

    Abstract: fluke 52 k/j thermometer tesec DV240 fluke 52 k/j Thermocouple AN-1028 AN-569 DV240 an-569 national
    Text: National Semiconductor Application Note 1028 June 2001 PDMAX t = [TJMAX − TA] / RθJA(t) Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of


    Original     		PDF OT-223 AN-1028 AN1028 fluke 52 k/j thermometer tesec DV240 fluke 52 k/j Thermocouple AN-1028 AN-569 DV240 an-569 national

    61000-4-X

    Abstract: IEC61000-4-X inductive TR-10 hbm 7637 circuit diagram electronic choke for tube light SDS Relay sds relays has 50-s lem SDS 24 HIGH SPEED RELAY AND8169
    Text: AND8181/D TVS Diode Selection Guidelines for the CAN Bus Prepared by: Jim Lepkowski, Paul Lem http://onsemi.com APPLICATION NOTE Introduction line capacitance less than 30 pF, which is required for the high 1.0 MHz data transmission rate. The voltage clamping


    Original     		PDF AND8181/D 61000-4-X IEC61000-4-X inductive TR-10 hbm 7637 circuit diagram electronic choke for tube light SDS Relay sds relays has 50-s lem SDS 24 HIGH SPEED RELAY AND8169

    Diode HER 507

    Abstract: an1543 AN1577 on semiconductor AN873 saturable core oscillator MJE18604D2 electronic ballast with npn transistor BUD43B BUD44D2 BUL44D2
    Text: AN1577/D ON Semiconductor’s D2 Series Transistors for Fluorescent Converters Prepared by: Pascal M. Otero ON Semiconductor Applications Engineer http://onsemi.com APPLICATION NOTE INTRODUCTION Switching bipolar transistors are very popular in the fluorescent ballast field where they provide cheap designs.


    Original     		PDF AN1577/D Diode HER 507 an1543 AN1577 on semiconductor AN873 saturable core oscillator MJE18604D2 electronic ballast with npn transistor BUD43B BUD44D2 BUL44D2

    R-T curves RJC

    Abstract: motorola application note AN-569 tesec DV240 AN1028 AN-569 DV240 NDS9956
    Text: AN1028 April, 1996 Maximum Power Enhancement Techniques for SOT-223 Power MOSFETs Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong 1. Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus


    Original     		PDF AN1028 OT-223 OT223 R-T curves RJC motorola application note AN-569 tesec DV240 AN1028 AN-569 DV240 NDS9956

    tesec DV240

    Abstract: AN1027 AN-569 DV240 NDS9956
    Text: AN1027 April, 1996 Maximum Power Enhancement Techniques for SuperSOTTM-8 Power MOSFETs Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong 1. Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus


    Original     		PDF AN1027 tesec DV240 AN1027 AN-569 DV240 NDS9956

    Mohan

    Abstract: AN1026 AN-569 DV240 NDS9956 motorola application note AN-569
    Text: AN1026 April, 1996 Maximum Power Enhancement Techniques for SuperSOTTM-6 Power MOSFETs Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong 1. Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus


    Original     		PDF AN1026 Mohan AN1026 AN-569 DV240 NDS9956 motorola application note AN-569

    DIODE T25-4

    Abstract: RT-911-15 PX1-DM3N human presence detection sensors circuit LX12N NA40-B photoelectric sensor circuit diagram circuit diagram water level INFRARED sensor Optical proximity sensor through beam laser triangulation
    Text: INTRODUCTION Principles of operation • Photoelectric sensor is a generic name for sensors which detect an object by using light. The optical signal transmitted from the emitting part of the sensor is modified by being reflected, transmitted, absorbed, etc., by the sensing object and is then detected by the receiving part of the


    Original     		PDF 100/ND300 LX12N DIODE T25-4 RT-911-15 PX1-DM3N human presence detection sensors circuit LX12N NA40-B photoelectric sensor circuit diagram circuit diagram water level INFRARED sensor Optical proximity sensor through beam laser triangulation

    Untitled

    Abstract: No abstract text available
    Text: Using the UCC24610EVM-693 User's Guide Literature Number: SLUU450 September 2010 User's Guide SLUU450 – September 2010 UCC24610EVM-693 Secondary-Side Synchronous Rectifier Controller Diode Replacement Demonstration Board 1 Introduction This demonstration board is intended for use to evaluate efficiency improvements gained by synchronous


    Original     		PDF UCC24610EVM-693 SLUU450 UCC24610EVM-693

    MJ10100

    Abstract: all transistor transistor Common Base configuration AN875 transistor on semiconductor AN875 K.S. Terminals USE OF TRANSISTOR MJ10021 fastest finger first
    Text: AN875/D Power Transistor Safe Operating Area Special Considerations for Switching Power Supplies http://onsemi.com Prepared by: Warren Schultz Applications Engineering APPLICATION NOTE Introduction The power transistor, in today’s switching power supply,


    Original     		PDF AN875/D r14525 MJ10100 all transistor transistor Common Base configuration AN875 transistor on semiconductor AN875 K.S. Terminals USE OF TRANSISTOR MJ10021 fastest finger first

    transorb motorola

    Abstract: temperature gague TP10 TPS2590
    Text: Using the TPS2590EVM User's Guide Literature Number: SLUU373 July 2009 User's Guide SLUU373 – July 2009 TPS2590 Hot Swap Controller System Test Board This User’s Guide describes the setup and operation of the TPS2590 System Test Board. 1 Introduction This User’s Guide describes the features of the TPS2590EVM. The TPS2590 schematic, layout and List


    Original     		PDF TPS2590EVM SLUU373 TPS2590 TPS2590EVM. TPS2590/91 transorb motorola temperature gague TP10

    HP 5082-3081

    Abstract: HSMP-3814 avago 5188 hsmp3814 HSMP-386x Series KYOCERA RESISTOR NETWORKS mcr10ezhj222 "Common rail" HSMP-38 sot-323 CR21
    Text: A Low-Cost Surface Mount PIN Diode π Attenuator Application Note 1048 Introduction Background Analog attenuators find wide application in RF and microwave networks. Realized as either GaAs MMICs or PIN diode networks, these circuits are used to set the power level of an RF signal from a voltage control. In


    Original     		PDF 5966-0449E HP 5082-3081 HSMP-3814 avago 5188 hsmp3814 HSMP-386x Series KYOCERA RESISTOR NETWORKS mcr10ezhj222 "Common rail" HSMP-38 sot-323 CR21

    R-T curves RJC

    Abstract: tesec DV240 AN-569 DV240 NDS9956 AN1025 SuperSOTTM -3 Fluke 16 thermocouple FLUKE 52
    Text: AN1025 April, 1996 Maximum Power Enhancement Techniques for SuperSOTTM-3 Power MOSFETs Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong 1. Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices.


    Original     		PDF AN1025 OT-23) R-T curves RJC tesec DV240 AN-569 DV240 NDS9956 AN1025 SuperSOTTM -3 Fluke 16 thermocouple FLUKE 52

    tesec DV240

    Abstract: AN1029 AN-569 DV240 NDS9956 213 so8
    Text: AN1029 April, 1996 Maximum Power Enhancement Techniques for SO-8 Power MOSFETs Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong 1. Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus


    Original     		PDF AN1029 tesec DV240 AN1029 AN-569 DV240 NDS9956 213 so8

    d2 transistor

    Abstract: motorola transistor cross reference motorola bipolar transistor GUIDE AN1543 Electronic Lamp Ballast Design high power bipolar transistor selection motorola diode cross reference an1543 npn pnp transistor bipolar cross reference AN1577 BUD44D2
    Text: MOTOROLA Order this document by AN1577/D SEMICONDUCTOR APPLICATION NOTE AN1577 Motorola's D2 Series Transistors for Fluorescent Converters Prepared by: Pascal M. OTERO Application Engineer – MOTOROLA – Toulouse INTRODUCTION ture are probably the most critical issues the designer has to


    Original     		PDF AN1577/D AN1577 d2 transistor motorola transistor cross reference motorola bipolar transistor GUIDE AN1543 Electronic Lamp Ballast Design high power bipolar transistor selection motorola diode cross reference an1543 npn pnp transistor bipolar cross reference AN1577 BUD44D2

    Video Switches

    Abstract: AN230 PI5V330S
    Text: 230 Interface Video Signal Using Pericom Video Switches By Paul Li Introduction Pericom PI3Vxx and PI5Vxx families are wide-bandwidth Video Switches specifically designed and characterized for analog video signal applications, including the component video signals of Ypbpr, YUV, YIQ, Y/R-Y/B-Y, RGB, and the


    Original     		PDF PI3V520 570Mhz PI5V330S. AN230 Video Switches PI5V330S

    Varactor Diodes

    Abstract: symbol of varactor diode and equivalent circuit varactor diode capacitance measurement varactor diode datasheet Dual Varactor Diode with Common Cathode reverse biasing a varactor diode varactor diode high frequency varactor diode q factor measurement "Varactor Diodes" hyperabrupt tuned oscillator
    Text: APPLICATION NOTE Varactor Diodes Introduction A varactor diode is a P-N junction diode that changes its capacitance and the series resistance as the bias applied to the diode is varied. The property of capacitance change is utilized to achieve a change in the frequency and/or the phase of an


    Original     		PDF

    jointal Z

    Abstract: 5n fast recovery diodes 30DL4 diode 30dl4 F10P20F circuit SCHEMATIC DIAGRAM SMPS 12v 5A diode RP 6040 31DF2 diode f5kq100 smps 8085
    Text: APPLICATION NOTE FRED U ltr a F a st R ec o v er y AND SCHOTTKY BARRIER D i ODE SBD APPLICATION NOTE TABLE OF CONTENTS Introduction. 27 1.Fast Recovery Diode . 27 2 .FRD and SBD .'. 28


    OCR Scan     		PDF JIS-C7021 40VDC jointal Z 5n fast recovery diodes 30DL4 diode 30dl4 F10P20F circuit SCHEMATIC DIAGRAM SMPS 12v 5A diode RP 6040 31DF2 diode f5kq100 smps 8085

    gunn diode generator

    Abstract: No abstract text available
    Text: GEC P L E S S E Y CT3513-1.2 GUNN DIODES - INTRODUCTION INTRODUCTION 1.1. Basic Gunn Diode Action There are two energy levels A and B— also known as Valleys—with the following properties: The variation of current with field for a perfect two terminal gallium arsenide device is shown in simplified form in Fig.1.


    OCR Scan     		PDF CT3513-1 gunn diode generator

    80500 TRANSISTOR

    Abstract: Vo 80500 TRANSISTOR HE 80500 HE 80500 TRANSISTOR CT 80500 80500+TRANSISTOR GR-900 double slug tuner varactor diode q factor measurement Silicon Power Cube
    Text: Application Note 80500: Tuning Diodes L introduction In recent years continuous development of tuning varactors - voltage controlled capacitors - together with an increased commercial and military use has led to sub­ stantial improvement in Q, reproducibility, and reliability.


    OCR Scan     		PDF Figure81sketches DKV6550B DVH6791, 80500 TRANSISTOR Vo 80500 TRANSISTOR HE 80500 HE 80500 TRANSISTOR CT 80500 80500+TRANSISTOR GR-900 double slug tuner varactor diode q factor measurement Silicon Power Cube

    backward diode

    Abstract: tunnel diode General Electric "backward diode"
    Text: P j p i GE C P L E S S E Y CT3508-1.2 MIXER & DETECTOR DIODES - INTRODUCTION M ETAL S E M IC O N D U C TO R SC H O TTK Y BA RRIER DIO DES INTRODUCTION A mixer is a sensitive receiver circuit which makes use of the nonlinear properties of a mixer diode to produce a


    OCR Scan     		PDF CT3508-1 backward diode tunnel diode General Electric "backward diode"