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    Omega Engineering WTPO4-4401

    WATER TESTING KITS - Bulk (Alt: WTPO4-4401)
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    Newark WTPO4-4401 Bulk 1
    • 1 $139.27
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    Dichtomatik TPO44 (ALTERNATE: 75186736)

    Oil Seal, 4.645" ID, 4.225" OD, 0.21" Width | Dichtomatik TPO44
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    RS TPO44 (ALTERNATE: 75186736) Bulk 3 Weeks 1
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    TE Connectivity MINCIP5616192-1

    5616192-2/B,MINCIP,O,44,#20 SO
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    TE Connectivity MINO8412196-10

    8412196/-,MINCCP,O,44#20 170DE
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    TE Connectivity MINO8412196-4

    8412196/-,MINCCP,O,44#20 60DEG
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    PO44 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PO44A Philips Semiconductors Optocoupler Original PDF

    PO44 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PO 168

    Abstract: PO150C 420C PO150B PO406 PO450C
    Text: Cut Charts PO SERIES PO150C / PO150B Page: 1 of 1 Date: 03/08 PO440C Operating Freq. Inches 124.5 440 MHz 10 1/4 26.0 47 1/2 120.7 445 MHz 9 3/4 24.8 152 MHz 46 116.8 450 MHz 9 1/8 23.2 156 MHz 44 1/4 112.4 455 MHz 8 3/4 22.2 160 MHz 42 1/2 108.0 460 MHz 8 3/8


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    PO150C PO150B PO440C PO450C PO406C PO470C 112th PO 168 420C PO150B PO406 PO450C PDF

    circuit diagram of Tri-State Buffer using CMOS

    Abstract: verilog code for UART with BIST capability block diagram for UART with BIST capability tri state AT28 vhdl code for flip-flop vhdl pid verilog code pid controller free vhdl code for usart
    Text: Features • 0.5 µm Drawn Gate Length 0.45 µm Leff Sea-of-Gates Architecture with • • • • • Triple-level Metal Embedded E2 Memory up to 256 Kb 3.3V Operation with 5.0V Tolerant Input and Output Buffers High-speed, 200 ps Gate Delay, 2-input NAND, FO = 2 Nominal


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    10T/100 ATL50/E2 1173D 11/99/1M circuit diagram of Tri-State Buffer using CMOS verilog code for UART with BIST capability block diagram for UART with BIST capability tri state AT28 vhdl code for flip-flop vhdl pid verilog code pid controller free vhdl code for usart PDF

    ATL35

    Abstract: CL11 PO22 PO33 PO44 PO55 ATL35/208
    Text: ATL35 I/O Buffer Cell Library-1.0-12/97 ATL35 0.35µ I/O Buffer Cell Library I/O Buffer Naming Convention . 8-2 I/O Site: Pad and Sub-Sections . 8-2


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    ATL35 CL11 PO22 PO33 PO44 PO55 ATL35/208 PDF

    AOI222

    Abstract: AOI2223 AOI222H MH1099 MH1242 0.35-um CMOS standard cell library inverter
    Text: Features • High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries • System Level Integration Technology Cores on Request: SRAM and TRAM (Gate Level or Embedded) • I/O Interfaces:


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    5962-01B01 4138E AOI222 AOI2223 AOI222H MH1099 MH1242 0.35-um CMOS standard cell library inverter PDF

    AVR 8515 microcontroller

    Abstract: FPGA AMI coding decoding tri state AOI222 AOI2223 AOI2223H AOI222H ATL35 0.35-um CMOS standard cell library inverter
    Text: Features • System Level Integration Technology • 0.35 µm Geometry in Triple-level Metal • I/O Interfaces; CMOS, LVTTL, LVDS, PCI, USB – Output Currents up to 20 mA, 5V Tolerant I/O • Embedded Flash Memory with Capacities of 1Mbit, 2Mbit or 4Mbit


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    22-bit 16-bit 1184B 03/00/xM AVR 8515 microcontroller FPGA AMI coding decoding tri state AOI222 AOI2223 AOI2223H AOI222H ATL35 0.35-um CMOS standard cell library inverter PDF

    tristate buffer

    Abstract: smd transistor AO HEX TO DECIMAL tristate buffer cmos A101 A201 MH1099E MH1156E PO11F MH1332E
    Text: Features • High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal • Up to 1.198M Used Gates and 512 Pads with 3.3V, 3V and 2.5V Libraries when Tested to Space Quality Grades • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries when Tested to


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    4110F tristate buffer smd transistor AO HEX TO DECIMAL tristate buffer cmos A101 A201 MH1099E MH1156E PO11F MH1332E PDF

    54175

    Abstract: PO11V5 16889 49035 56374 28548 58128 13.562 93408 atmel 246
    Text: ERRATA SHEET DATE: April 2009 TO: Aerospace customers SUBJECT: 5V COMPLIANT BUFFERS WITH CORE POWERED AT 2.5V A 5V compliant buffer is a buffer powered by a 5V supply which is able to tolerate with negligible leakage current and without any reliability problems 5V signals (input buffer and pullup/pull-down) or drive 5V signals on its output (output buffer).


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    125pf 130pf 135pf 140pf 145pf 150pf 155pf 160pf 165pf 170pf 54175 PO11V5 16889 49035 56374 28548 58128 13.562 93408 atmel 246 PDF

    AT 2005A

    Abstract: L33 TRANSISTOR ATMEl 837 ARM CORE 1825 verilog code for UART with BIST capability 8 bit risc microprocessor using vhdl L33v verilog code for 32 bit risc processor 2005A-ASIC-06 MIPS64 5kf
    Text: Features • • • • • Available in Gate Array, Embedded Array or Standard Cell High-speed, 75 ps Gate Delay, 2-input NAND, FO = 2 nominal Up to 13.7 Million Used Gates and 1516 Pins 0.18µ Geometry in up to Six-level Metal System-level Integration Technology


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    ARM920TTM ARM946E-STM MIPS64TM AT 2005A L33 TRANSISTOR ATMEl 837 ARM CORE 1825 verilog code for UART with BIST capability 8 bit risc microprocessor using vhdl L33v verilog code for 32 bit risc processor 2005A-ASIC-06 MIPS64 5kf PDF

    atmel 216

    Abstract: ECL IC NAND CQFP 256 PIN actel Atmel 642 PO22 tri state ATL35 atmel 334 20PCI atmel h 952
    Text: Features • High-speed - 150 ps Gate Delay - 2-input NAND, FO = 2 nominal • Up to 2.7 Million Used Gates and 976 Pins • System Level Integration Technology – Cores: ARM7TDMI and AVR RISC Microcontrollers, OakDSP™ and LodeDSPCores™, 10T/100 Ethernet MAC, USB and PCI Cores


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    10T/100 ATL35 0802E 10/99/0M atmel 216 ECL IC NAND CQFP 256 PIN actel Atmel 642 PO22 tri state atmel 334 20PCI atmel h 952 PDF

    PO77

    Abstract: No abstract text available
    Text: ATL25 I/O Buffer Cell Library - Preliminary - 1.1 - 09/99 ATL25 0.25µ I/O Buffer Cell Library Preliminary I/O Buffer Naming Convention . 8-2 I/O Site: Pad and Sub-sections. 8-2


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    ATL25 PO77 PDF

    Untitled

    Abstract: No abstract text available
    Text: PO11 ATL25 CMOS Gate Array cell data sheets 4.0 Description: Tristate output buffer, 2mA drive. Characterization: 25C, 3.3v, Nominal Process Cell area sites : 0.0 Pin caps(pF): AO=0.060, E0=0.060 Typical delay times (slope in ns/pF; intercept in ns; input transition = 0.600ns):


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    ATL25 600ns) PDF

    PO77F

    Abstract: PO55F 090569 PO55V 24236 PO11F 328-529 po11s PX2L PO22
    Text: ATL35 I/O Buffer Cell Library-1.4-09/99 ATL35 0.35µ I/O Buffer Cell Library I/O Buffer Naming Convention . 8-2 I/O Site: Pad and Sub-Sections . 8-2


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    ATL35 PO22V5 PO44V5 PO77F PO55F 090569 PO55V 24236 PO11F 328-529 po11s PX2L PO22 PDF

    PO88

    Abstract: ttl buffer AOI222 AOI2223 AOI2223H AOI222H MH1099 MH1242 PRD21 PRD29V5
    Text: Features • High Speed - 170 ps Gate Delay - 2 input NAND, FO=2 nominal • Up to 1.6 Million Used Gates and 596 pads, with 3.3V, 3V, and 2.5V libraries • System Level Integration Technology Cores on request: SRAM and TRAM (Gate Level or Embedded) • I/O Interfaces:


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    250MHz 220MHz 800MHz 5962-01B01 PO88 ttl buffer AOI222 AOI2223 AOI2223H AOI222H MH1099 MH1242 PRD21 PRD29V5 PDF

    TEMIC PLD

    Abstract: PRU10 PRD8 buffer 8x Structure of D flip-flop DFFSR AOI222 AOI2223 AOI2223H AOI222H MH1099
    Text: MH1 1.6 Million gates Sea of Gates / Embedded Arrays 1. Description The MH1 Series Gate Array and Embedded Array families from TEMIC are fabricated in a 0.35µ CMOS process, with up to 3 levels of metal. This family features arrays with up to 1.6 million routable gates and 600 pins. The


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    Transistor Equivalent list po55

    Abstract: atmel 938 on digital code lock using vhdl mini pr credence tester 2042B atmel 532 atmel 422 bsu 479 atmel 424 2042B-ASIC
    Text: ATL25 Series . Design Manual Table of Contents Section 1 ATL25 Series ASIC. 1-1 1.1 1.2


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    ATL25 2042B-ASIC Transistor Equivalent list po55 atmel 938 on digital code lock using vhdl mini pr credence tester 2042B atmel 532 atmel 422 bsu 479 atmel 424 PDF

    Transistor Equivalent list po55

    Abstract: Structure of D flip-flop DFFSR tristate buffer sis 968 PO-44Z PRU11 AC/DC drive nec 78054 PO22 tristate buffer cmos
    Text: Features • High Speed - 180 ps Gate Delay - 2 input NAND, FO=2 nominal • Up to 1.198 M Used Gates and 512 Pads with 3.3 V, 3V and 2.5V libraries when tested to space quality grades • Up to 1.6M Used Gates and 596 Pads with 3.3 V, 3V and 2.5V libraries when tested to


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    spw -136

    Abstract: SMCS116
    Text: SpW-10X SpaceWire Router User Manual Ref.: UoD_SpW-10X_ UserManual Issue: 3.4 Date: 11th July 2008 SpW-10X SpaceWire Router User Manual Ref: UoD_SpW-10X_UserManual Atmel Part No.: AT7910E Document Revision: Issue 3.4 Date: 11th July 2008 Prepared by - Chris McClements, University of Dundee


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    SpW-10X SpW-10X_ SpW-10X AT7910E 19th-March-2004 spw -136 SMCS116 PDF

    1F00H-1FFFH

    Abstract: TMS370C777A "TMS370 Family Data Manual" SE370C777A texas instruments ttl manual TMS370 SPNS014
    Text: TMS370Cx7x 8-BIT MICROCONTROLLER S PN S034B-SEPTEM BER 1 9 9 5 - REVISED MARCH 1996 CMOS/EEPROM/EPROM Technologies on a Single Device - Mask-ROM Devices for High-Volume Production - One-Time-Programmable OTP EPROM Devices for Low-Volume Production - Reprogrammable EPROM Devices for


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    TMS370Cx7x SPNS034B-SEPTEMBER 70Cx7x SPNS034B R-PDIP-T64) 0o-15" 4040056/B 0CH73b3 1F00H-1FFFH TMS370C777A "TMS370 Family Data Manual" SE370C777A texas instruments ttl manual TMS370 SPNS014 PDF

    TI Marking P272

    Abstract: p135L mip283 L5106 ALI 3101 C I-CUBE iq P109t transistor P239 416L CA3125
    Text: •Pt I - C u b IQX Family Data Sheet e m F eatures D e s c r ip t io n • SRAM-based, in-system programmable The IQX family of SRAM-based bit-oriented switching devices is • Switch Matrix manufactured using a 0.6nm CMOS process. These devices offer clock speeds of up to 133 MHz and pin-to-pin delay as low


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    thx 203

    Abstract: thx 203 h THX7899M 7899M PD44 diode THOMSON-CSF CCD sensor or31 TB 25 Abc P15B1 A5 vNB
    Text: T O E b ö 7E GÜÜES'i? 177 _THX 7899M FULL FIELD CCD IMAGE SENSOR 2048 x 2048 PIXELS Designed for digital photography, graphic arts, medical and scientific applications Pixel 14|imxl4|un photomos with 100% aperture Image zone: 28,67mmx28,67mm


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    7899M 67mmx28 20MHz 1024x1024 unx28 20MHz/output 400-1100nm thx 203 thx 203 h THX7899M 7899M PD44 diode THOMSON-CSF CCD sensor or31 TB 25 Abc P15B1 A5 vNB PDF

    Untitled

    Abstract: No abstract text available
    Text: RT9170 1. 1.1 Intelligent T1 Controller INTRODUCTION 1.2 SUMMARY * The Rockwell RT9170 Intelligent T1 Controller is a micro­ processor MPU controlled device which implements a T1 interlace between the multiplexed digital DS1 signal and the PCM highway of digital voice and data system equip­


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    RT9170 RT9170 ss064 8S41762 PDF

    uPD447-2

    Abstract: No abstract text available
    Text: N E C M i c r o c o m p u t e r s , I n c . ^ p d u 7 ^ /x PD447-1 H PD447-2 2048 x 8 BIT STATIC CMOS RAM D E S C R IP T IO N The /jPD447 is a high speed, low power, 2048 word by 8 bit static CMOS RAM fabricated using an advanced silicon gate CMOS technology. A unique circuitry tech­


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    uPD447-1 uPD447-2 /jPD447 fxPD447 PD447 PD447C juPD447D PDF

    I-CUBE

    Abstract: 2P034 P001 pb416 PO88 TPA 4863 A18K tq52 P046 P009
    Text: & l •Cube IQ Family Data Sheet Update IQ96, IQ64B, IQ48, IQ32B Features Description • • These additional members in the IQ previously called FPID family are based on 0.6|im CMOS Process. • • • • • 32, 48, 64 and 96 I/O Ports SRAM-based Programming for In-system


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    IQ64B, IQ32B I-CUBE 2P034 P001 pb416 PO88 TPA 4863 A18K tq52 P046 P009 PDF

    mip283

    Abstract: P124d ST P239 p037 ke EL B17 A017 I-CUBE ior p135 p005 ab 48 tag 91 P106t TI Marking P272
    Text: •Pt I - C u b IQX Family Data Sheet e m F eatures D e s c r ip t io n • SRAM-based, in-system programmable The IQX family of SRAM-based bit-oriented switching devices is • Switch Matrix manufactured using a 0.6nm CMOS process. These devices offer clock speeds of up to 133 MHz and pin-to-pin delay as low


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    PDF