T9541
Abstract: HP3070 PM5347
Text: - PMC_Sierra_Cells for PMC - Sierra revision : VHDL Package and Package Body 1.0 created by : James Lamond Hewlett Packard Canada Ltd date : 20 December 1995 package PMC_Sierra_Cells is use STD_1149_1_1990.all; constant cele0 : CELL_INFO; end PMC_Sierra_Cells;
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PM5347
T9541
HP3070
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RX 433
Abstract: 2.tx transistor tx/rx 433 tx 433 tx rx 433 rx 451 AN2184 M5272C3 MCF5272
Text: PLIC ISR Performance Analysis General Purpose Average CPU Cycles (Cache off) Average CPU Cycles (Cache on) 800 700 600 400 300 200 100 R Po x B 1 rt 3 Rx B2 Po rt 3 Rx Po D rt 3 Tx Po B1 rt 3 Tx B2 Po rt 3 Tx D Po rt 3 R Po x B 1 rt 2 Rx B2 Po rt 2 Rx Po
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App60
M5272C3
MCF5272
RX 433
2.tx transistor
tx/rx 433
tx 433
tx rx 433
rx 451
AN2184
M5272C3
MCF5272
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M9703
Abstract: HP3070
Text: BSDL SOURCE CODE - PMC_Sierra_Cells for PMC - Sierra revision : VHDL Package and Package Body 1.0 created by : James Lamond Hewlett Packard Canada Ltd date : 20 December 1995 package PMC_Sierra_Cells is use STD_1149_1_1990.all; constant cele0 : CELL_INFO;
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pm7375
LASAR-155
pm7375;
M9703
HP3070
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High-Frequency Modulation IC for Laser Diode
Abstract: TC9386FU
Text: 5. Technical Datasheets 5–3 TOLD2003SDA Features • Two-wavelength laser diode • Use of a monolithic chip realizes high-precision lasing point spacing. • Has succeeded in 85˚C operation for the first time as a two-wavelength laser diode. Suitable for use in DVD car
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OLD2003SDA
Reve50
TC9386FU)
TC9386FU
High-Frequency Modulation IC for Laser Diode
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STK401-140
Abstract: STK401-000
Text: Ordering number:ENN4898 Thick Film Hybrid IC STK401-140 2ch AF Power Amplifier Split Power Supply (120W + 120W min, THD = 0.4%) Overview Package Dimensions A major feature of Sanyo thick-film power amplifier ICs is that all ICs within a given product series are pin compatible. This allows users to construct a product line of amplifiers with differing power output capacities using the same
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ENN4898
STK401-140
STK401-140
STK401-000
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NE960R2
Abstract: NE960R200 NE960R275 NE961R200
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power CW with high linear
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NE960R2
NE961R200
NE960R200
NE960R275
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PI7C7300D
Abstract: 272-PIN M66EN PI7C7300A
Text: PI7C7300D 3-PORT PCI-to-PCI BRIDGE Revision 1.01 3545 North 1ST Street, San Jose, CA 95134 Telephone: 1-877-PERICOM 1-877-737-4266 FAX: 408-435-1100 Internet: http://www.pericom.com PI7C7300D 3-PORT PCI-TO-PCI BRIDGE LIFE SUPPORT POLICY Pericom Semiconductor Corporation’s products are not authorized for use as critical components in life support devices or systems
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PI7C7300D
1-877-PERICOM
66MHz.
272-PIN
PI7C7300DNA
PI7C7300DNAE
PI7C7300D
M66EN
PI7C7300A
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Untitled
Abstract: No abstract text available
Text: UTC LM4880 CMOS IC DUAL 250mW AUDIO POWER AMPLIFIER WITH SHUTDOWN MODE DESCRIPTION The UTC LM4880 is a dual audio power amplifier capable of delivering typically 250mW per channel of continuous average power to an 8Ω load with 0.1% THD+N using a 5V power supply.
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LM4880
250mW
LM4880
QW-R502-033
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WORKING PRINCIPLE OF proximity sensor
Abstract: flow nozzle catologue 0 281 002 507 0 281 002 401 49100
Text: Position detectors www.crouzet.com 21 Pressure decay sensor • 100 % pneumatic Also available in ATEX version for use in potentially explosive atmospheres in accordance with 94/9/EC Directive Pressure decay sensor 81 504 025 Symbol Characteristics Operating pressure
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94/9/EC
WORKING PRINCIPLE OF proximity sensor
flow nozzle
catologue
0 281 002 507
0 281 002 401
49100
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PDF
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NE960R2
Abstract: NE960R200 NE960R275 NE961R200
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power CW with high linear
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NE960R2
NE961R200
NE960R200
NE960R275
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PDF
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P2439
Abstract: No abstract text available
Text: w w w . s w i t c h c r a f t . on l in e co m po ne nt s. co m Pro Audio & Broadcast Catalog Sixth Edition Patchbays, Patchcords & Molded Cable Assemblies Connectors and Adapters Jacks and Plugs Guitar Switches c o m * Please visit the product pages on our website for the most up-to-date product information
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TT34B.
TT34BN
TT34BNY.
TT96EDACNO.
TT96EDACNS
TTD10.
P2439
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PDF
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BOSCH 9 190 040 099 E
Abstract: schrack ZF 112 Schrack* zf 900 052 taiko relay TB1 taiko relay guardian relay 192 1C 12 NEC MR602 RELAYS NEC Relay MR31 24 nec omron g2v relay schrack ZF 132
Text: AMERICAN ZETTLER, INC. IT’S A BETTER RELAY SOLID STATE RELAYS AUTOMOTIVE RELAYS on lin e co m po ne nt s. co m ELECTROMECHANICAL RELAYS SELECTION GUIDE R E L AY SELECTION s. co m GUIDE on lin e co m po ne nt A m e r i c a n Z e t t l e r, I n c . R e v. 8 / 0 1 / 0 7
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AZ164â
AZ166
BOSCH 9 190 040 099 E
schrack ZF 112
Schrack* zf 900 052
taiko relay TB1
taiko relay
guardian relay 192 1C 12
NEC MR602 RELAYS
NEC Relay MR31 24 nec
omron g2v relay
schrack ZF 132
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mW51
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - I M 3 = -44 d B c at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 7.1 GHz to 7.9 GHz
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TIM7179-8L
MW51000196
7179-8L
mW51
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KOWA
Abstract: 2014n J0123 vitramon 10C
Text: STYLE V J 0 4 0 2 M onolithic C eram ic Chip C apacitors _ FEATURES Vttramon* proprietary "wet fabrication* process lor manufacturing ceramic chip capacitors results in maximum capacitance per unit area. A full range of dielectrics and voltage ratings is available in
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VJ0402
BP113
F-41102
MIL-C-5568'
KOWA
2014n
J0123
vitramon 10C
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PDF
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PRO MATE II Universal Programmer
Abstract: AN546 REGISTER19 de 119 I2C MULTIMASTER AN MICROCHIP it27
Text: PICI 6C9XX INDEX A A/D Accuracy/Error. 86 , 80 ADCON1. 79, 80
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DS30444E
PRO MATE II Universal Programmer
AN546
REGISTER19
de 119
I2C MULTIMASTER AN MICROCHIP
it27
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PDF
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itr 9009
Abstract: R/Vitramon J0603 marking code k4t KOWA specification CECC 3009 VJ0603Y104KXXMT
Text: _ STYLE V J 0 6 0 3 M onolithic C eram ic Chip C apacitors Igtl Ji FEATURES Vitramon* proprietary "wet fabrication' process or manufacturing ceramic crup capacitors results in maximum capacitance per unit area. A full range ot dielectrics and voltage ratings is available in industry
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VJ0603
J0603
11-4D-7191-8140
BP11S
F-41102
C-55661.
itr 9009
R/Vitramon
marking code k4t
KOWA
specification CECC 3009
VJ0603Y104KXXMT
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Untitled
Abstract: No abstract text available
Text: CRT Driver calodic CORPORATION Preliminary Product Information CVA1769N FEATURES DESCRIPTION • • • • • The CVA1769N CRT driver amplifier is a very low cost solution designed for monitors up to 69KHz. This product is designed to replace the discrete solution for the 15" and 17" monitors.
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CVA1769N
CVA1769N
69KHz.
69KHz
1T-04A
1T-04B
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max2846
Abstract: No abstract text available
Text: CRT Driver calodic CORPORATION Preliminary Product Information CVA1569N FEATURES DESCRIPTION • • • • • The CVA1569N CRT driver amplifier is a very low cost solution designed for monitors up to 69KHz. This product is designed to replace the discrete solution for the 14" and 15" monitors.
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CVA1569N
CVA1569N
69KHz.
48KHz,
56KHz
69KHz
1T-04A
1T-04B
max2846
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA M ICROW AVE POWER MICROWAVE SEMICONDUCTOR GaAs FET TIM 7179-8L TECHNICAL DATA FEATURES : • LO W IN T E R M O D U L A T IO N D IS T O R T IO N I M 3 = - 4 4 dBc at Po = 2 8 dBm, Single Carrier Level ■ H IG H GAIN G ^ b = 5.5 dB at 7.1 GHz to 7.9 GHz
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OCR Scan
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7179-8L
TIM7179-8L-----TIM
7179-8L
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PDF
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5651 tube
Abstract: 5651 Scans-0017480
Text: S Y lA A M V jp ^ SYLVANIA engineering data service 555^ QUICK R E F E R E N C E DATA The Sylvania T ype 5651 is a m iniature cold cathode, gas filled glow discharge diode intended for use as a voltage reference tube in electronically regulated pow er supplies.
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T-51/2
5651 tube
5651
Scans-0017480
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PDF
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Untitled
Abstract: No abstract text available
Text: lu e :* : i PR1001 thru PR1007 SEMICONDUCTORS FEATURES DO-41 • Low cost .034 .86 .028 (.71) • Diffused junction • Low leakage • Low forward voltage drop 1.0 {25.4) M IN • High current capability • Easily cleaned with Freon, Alcohol, Chlorothene and
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PR1001
PR1007
DO-41
DO-41,
L-STD-202,
DO-15
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PDF
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diode 0a47
Abstract: DIODE OA91 OA95 diode OA90 diode oa47 diode DIODE OA90 OA91 diode OA1182 0a47 diode germanium oa95
Text: B K C INTERNATIONAL 30E D • 1 1 7 H 4 3 0000355 ? ■ x iiL lL H - d - . -pOl-OT i 6 Lake Street PO Box 1436 Lawrence. MA 01841 617)681-0392 (508) 681-0392 BK C International Electronics Inc. Gold Bond Germanium Diodes TYPE G1607 FEATURES Low forward voltage drop
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117T1Ã
G1607
300mA
MIL-S-19500,
diode 0a47
DIODE OA91
OA95 diode
OA90 diode
oa47 diode
DIODE OA90
OA91 diode
OA1182
0a47
diode germanium oa95
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PDF
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Vendome
Abstract: No abstract text available
Text: STYLE V J0 80 5 M onolithic C eram ic Chip C ap acitors FEATURES VHram on* proprietary "W et fabrication* process for m anufacturing ceram ic chip capacitors results in maximum capacitance per unit area. A fu ll range of dielectrics and voltage ratings is available in
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VJ0805
BP113
F-41102
3-5423-54i
011-33-IM80-2092
ILC-65681
Vendome
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PDF
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Untitled
Abstract: No abstract text available
Text: PO SITRO NC M D USTRCS BELIEVES TH E DATA ON T H 6 DRMMNG TO B E RELIABLE, SIN CE TH E TECH M CAL INFORMATION IS GIVEN FR EE O F CHARGE, TH E USER EM PLO YS SU CH INFORMATION AT H 6 OWN DSCRETION AND RISK. PO SfTRO NC INDUSTRIES ASSU M ES NO R E SPO N S B U T Y FOR RESULTS OBENNED O R DAMAGES
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SK6131
SK6370
CBM17I2M93S00S
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PDF
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