PNP TRANSISTOR TO-92 BC327 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2.BASE Symbol 3. EMITTER Parameter Value

BC327

Abstract: BC328 transistor BC328
Contextual Info: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn BC327/ BC328 TRANSISTOR PNP FEATURES Power dissipation TO-92 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. COLLECTOR Symbol 2.BASE Parameter Value

BC327A

Abstract: Transistor B C 458
Contextual Info: BC327A PNP Epitaxial Silicon Transistor BC327A PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages 1 TO-92 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings * T a Symbol

Contextual Info: BC327A PNP Epitaxial Silicon Transistor BC327A PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages 1 TO-92 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings * T a Symbol

BC327

Abstract: BC328 BC327 equivalent transistor BC328 BC327 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR PNP FEATURES Power dissipation TO-92 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. COLLECTOR Symbol 2.BASE Parameter Value VCBO Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR PNP FEATURES Power dissipation PCM: TO-92 0.625 W (Tamb=25℃) 1. COLLECTOR Collector current -0.8 A ICM: Collector-base voltage BC327 -50 V

BC327

Contextual Info: BC327 TO-92 Plastic-Encapsulate Transistor s Transistor PNP TO-92 1.COLLECTOR 2.BASE 3.EMITTER 1 2 3 TYPICAL CHARACTERISTICS -1.0 -1.0 o T A =25 o C T j =25 C V BE (sat)@Ic/I B =10 -0.8 Ic=-500mA -0.6 -0.4 Ic=-300mA -0.2 V VOLTAGE(VOLTS) V CE ,COLLECTOR EMITTER VOLTAGE(VOLTS)

bc327 pnp

Abstract: BC327
Contextual Info: BC327 PNP EPITAXIAL PLANAR TRANSISTOR Features KM h H Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation T B TO-92 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS  FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to UTC BC337/338 1 TO-92  ORDERING INFORMATION Ordering Number

transistor BC327

Abstract: BC307 BC327 PNP transistor download datasheet 100C BC327 BC328 BC338
Contextual Info: BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage

IC 630

Abstract: BC327
Contextual Info: DC COMPONENTS CO., LTD. BC327 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for driver and output stage of audio amplifiers. TO-92 Pinning .190 4.83 .170(4.33) 1 = Collector 2 = Base 3 = Emitter

BC337 pnp transistor

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA= 2 5 t C haracteristic Sym bol Collector-Em itter Voltage

BC327

Abstract: BC328 TRANSISTOR BC327-40 BC327 PNP transistor TRANSISTOR pnp BC328 BC327 transistor BC328-16 transistor BC328 bc327 datasheet BC327-25
Contextual Info: BC327 / BC328 PNP Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 2Base 3Emitter J CLASSIFICATION OF hFE 1 A Product-Rank BC327-16

Contextual Info: BC327 VISHAY PNP EPITAXIAL PLANAR TRANSISTOR /uTE M ir I POWER SEMICONDUCTOR J Features Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation TO-92 Mechanical Data_

Contextual Info: UTC BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC337/338 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified

TRANSISTOR BC327-40

Abstract: bc327 TRANSISTOR
Contextual Info: UTC BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC337/338 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified

BC327

Abstract: BC327 PNP transistor download datasheet BC327 transistor utc BC328 328 transistor BC327 pnp transistor datasheet PNP BC327 transistor bc327 BC328 OF TRANSISTOR BC337
Contextual Info: UTC BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC337/338 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified

BC307

Abstract: BC327 BC328 BC338 BC327 W 75
Contextual Info: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

BC307

Abstract: BC338 BC327 BC328
Contextual Info: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

BC327

Abstract: BC328
Contextual Info: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

bc338

Contextual Info: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

bc337 fairchild

Abstract: BC337 pnp transistor
Contextual Info: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

BC307

Abstract: 2001 PNP TO-92
Contextual Info: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

BC327

Abstract: DS21
Contextual Info: BC327 VISHAY PNP EPITAXIAL PLANAR TRANSISTOR /l i t e w i i / POWERSEMICONDUCTOR I Features • • • Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation TO-92 Mechanical Data