2SA1627
Abstract: pnp transistor 600V 2sa162
Text: UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching
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2SA1627
2SA1627
O-126
QW-R204-010
pnp transistor 600V
2sa162
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Untitled
Abstract: No abstract text available
Text: UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching
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2SA1627
2SA1627
O-126
QW-R204-010
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2SA1627A
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES * High voltage * Low collector saturation voltage.
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2SA1627A
2SA1627A
2SA1627AL-x-AA3-R
2SA1627AG-x-AA3-R
2SA1627AL-x-T60-K
2SA1627AG-x-T60-K
2SA1627AL-x-T6C-K
2SA1627AG-x-T6C-K
2SA1627AL-x-TN3-R
2SA1627AG-x-TN3-R
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES * High voltage * Low collector saturation voltage.
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2SA1627A
2SA1627A
2SA1627AL-x-AA3-R
2SA1627AG-x-AA3-R
2SA1627AL-x-TM3-T
2SA1627AG-x-TM3-T
2SA1627AL-x-TN3-R
2SA1627AG-x-TN3-R
2SA1627AL-x-T60-K
2SA1627AG-x-T60-K
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2SA1627A
Abstract: 600v pnp
Text: UTC 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. 1 *High-speed switching
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2SA1627A
2SA1627A
O-126C
QW-R217-004
600v pnp
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Untitled
Abstract: No abstract text available
Text: UTC 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. 1 *High-speed switching
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2SA1627A
2SA1627A
O-126C
QW-R217-004
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES * High voltage * Low collector saturation voltage.
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2SA1627A
2SA1627A
2SA1627AG-x-AA3-R
2SA1627AL-x-TM3-T
2SA1627AG-x-TM3-T
2SA1627AL-x-TN3-R
2SA1627AG-x-TN3-R
2SA1627AL-x-T60-K
2SA1627AG-x-T60-K
2SA1627AL-x-T6C-K
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pnp transistor 600V
Abstract: PNP -600v
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR 1 TO-126C DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES * High voltage
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2SA1627A
O-126C
2SA1627A
O-126
2SA1627AL-T60-K
2SA1627AG-T60-K
2SA1627AL-T6C-K
2SA1627AG-T6C-K
O-126
O-126C
pnp transistor 600V
PNP -600v
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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PNP -600v
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR 1 TO-252 DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. 1 TO-126 FEATURES * High voltage
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2SA1627A
O-252
2SA1627A
O-126
O-126C
2SA1627AL-x-T60-K
2SA1627AG-x-T60-K
2SA1627AL-x-T6C-K
2SA1627AG-x-T6C-K
2SA1627AL-x-TN3-R
PNP -600v
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR 1 TO-252 DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. 1 TO-126 FEATURES * High voltage * Low collector saturation voltage.
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2SA1627A
O-252
2SA1627A
O-126
O-126C
2SA1627AL-x-T60-K
2SA1627AG-x-T60-K
2SA1627AL-x-T6C-K
2SA1627AG-x-T6C-K
2SA1627AL-x-TN3-R
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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pnp transistor 600V
Abstract: TSA1765 600v pnp TRANSISTOR 0835
Text: TSA1765 High Voltage PNP Epitaxial Planar Transistor SOT-223 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -600V BVCEO -560V IC -150mA VCE SAT Features ● ● Ordering Information Low Saturation Voltages High Breakdown Voltage Part No.
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TSA1765
OT-223
-600V
-560V
-150mA
-50mA
-10mA
TSA1765CW
pnp transistor 600V
TSA1765
600v pnp
TRANSISTOR 0835
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Untitled
Abstract: No abstract text available
Text: SFT5094-4 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 AMP 600 VOLTS HIGH VOLTAGE PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • BVCER to 600V.
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SFT5094-4
200oC
SFT5015.
100oC
100mA;
10MHz
100mA
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Untitled
Abstract: No abstract text available
Text: SFT5094-4 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 AMP 600 VOLTS HIGH VOLTAGE PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • BVCER to 600V.
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SFT5094-4
200oC
SFT5015.
100oC
10MHz
100mA
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Untitled
Abstract: No abstract text available
Text: SFT5094/5 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 AMP 600 VOLTS HIGH VOLTAGE PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • BVCER to 600V.
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SFT5094/5
200oC
SFT5015.
100oC
10MHz
100mA
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Untitled
Abstract: No abstract text available
Text: SFT5094/5 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 AMP 600 VOLTS HIGH VOLTAGE PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • BVCER to 600V.
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SFT5094/5
200oC
SFT5015.
2N5094
100oC
10MHz
100mA
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KTA1807D
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA1807D/L TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. A FEATURES I C High Voltage : VCEO=-600V. J : tf D High Speed Switching Time. B 1.0 s IC=-0.5A Low Collector Emitter Saturation Voltage.
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KTA1807D/L
-600V.
-60mA)
150PULSE)
KTA1807D
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TR0007A
Abstract: STX6905 STX7905 pnp transistor 600V transistor A 562
Text: PRELIMINARY STX6905 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: 562 404-4474 * Fax: (562) 404-1773 1 AMP 600 VOLTS PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • • • • • • BVCBO 600V. Fast Switching. Low Leakage.
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STX6905
200oC
STX7905.
20uADC)
600VDC)
25mADC,
50mADC
10VDC,
30VDC
TR0007A
STX6905
STX7905
pnp transistor 600V
transistor A 562
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600V PNP
Abstract: pnp transistor 600V Transistor SMD 028 SMD TRANSISTOR MARKING 28 transistor 2sa1413 high voltage TRANSISTOR SMD 1a 9 2SA1413-Z 2sa1413
Text: Transistors SMD Type PNP Silicon Transistor 2SA1413-Z Features 6.50 +0.2 5.30-0.2 +0.15 -0.15 High Voltage: VCEO=-600V +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127
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2SA1413-Z
-600V
O-252
-60mA
-50mA
-250V
600V PNP
pnp transistor 600V
Transistor SMD 028
SMD TRANSISTOR MARKING 28
transistor 2sa1413
high voltage TRANSISTOR SMD 1a 9
2SA1413-Z
2sa1413
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2sa1627
Abstract: pnp 600v 1a pnp transistor 600V TO-126C
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SA1627 TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM : 1.25 W (Tamb=25℃) 1. EMITTER Collector current : -1 A ICM Collector-base voltage V V(BR)CBO : -600
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O-126C
2SA1627
O-126C
-300mA,
-60mA
-100mA
-250V,
2sa1627
pnp 600v 1a
pnp transistor 600V
TO-126C
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pnp transistor 600V
Abstract: KTA1716 600v pnp switching 600V PNP
Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTA1716 EPITAXIAL PLANAR PNP TRANSISTOR HIGH-VOLTAGE SWITCHING TRANSISTOR TELEPHONE POWER-SUPPLY USE. FEATURES • High Breakdown Voltage. : VCeo=-600V • Low V cE sat (Typ. -0.25V) • Fast Switching.
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KTA1716
-600V
-300mA,
-60mA)
-600V,
100mA
--300mA,
-60mA
pnp transistor 600V
KTA1716
600v pnp switching
600V PNP
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pnp transistor 600V
Abstract: 600V PNP
Text: SEMICONDUCTOR TECHNICAL DATA KTA1716 EPITAXIAL PLANAR PNP TRANSISTOR HIGH-VOLTAGE SWITCHING TRANSISTOR TELEPHONE POWER-SUPPLY USE. FEATURES • High Breakdown Voltage. : VCeo=-600V • Low V cE sat (Typ. -0.25V) • Fast Switching. • Wide SOA. ( I c = -300mA,
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-600V
KTA1716
-300mA,
-60mA)
100mA
-60mA
-50mA
pnp transistor 600V
600V PNP
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2SA1807
Abstract: AO2000 600V PNP 230-Z 2SA1807F5 5A SF SC 30
Text: h 7 > v7> £ /Transistors 2SA1807F5 2SA 1807F5 PNP y U ^ > h Triple Diffused Planar PNP Silicon Transistor High Voltage Switching For Telephone Switching Power Suppliers • ftft • rfi&ia/Dimenslons (U nit: mm) 1) ¡ 5 H E T £ 3 o B V ceo = -600 V 2)
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2SA1807F5
-600V
-300mA/-60mA
500mA)
-300mA/-60mA)
-500mA)
SC-63
2SA1807
AO2000
600V PNP
230-Z
2SA1807F5
5A SF SC 30
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