PNP TRANSISTOR 5A 150V Search Results

PNP TRANSISTOR 5A 150V Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini
TTA004B	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N
TTA2070	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini

PNP TRANSISTOR 5A 150V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: , U na. C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TIP514 DESCRIPTION • Continuous Collector Current-lc= -5A • Collector-Emitter Breakdown Voltage:V(BR)CEo=-150V(Min.)	Original	TIP514 -150V 1001C -30mA;	PDF
2SA1860 Abstract: 2SC4886 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1860 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4886 APPLICATIONS ·Designed for audio and general purpose applications.	Original	2SA1860 -150V 2SC4886 -150V 2SA1860 2SC4886	PDF
2SA1303 Abstract: 2SC3284 pnp transistor 5A 150V power transistor transistors equivalents Contextual Info: INCHANGE Semiconductor Product Specification 2SA1303 Silicon PNP Power Transistor DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3284 APPLICATIONS ·Designed for audio and general purpose applications	Original	2SA1303 -150V 2SC3284 -150V 2SA1303 2SC3284 pnp transistor 5A 150V power transistor transistors equivalents	PDF
2SA1107 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1107 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·High Power Dissipation APPLICATIONS ·For audio and general purpose applications	Original	2SA1107 -150V -150V; 2SA1107	PDF
2SC4886 Abstract: 2SA1860 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1860 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4886 APPLICATIONS ·Designed for audio and general purpose applications.	Original	2SA1860 -150V 2SC4886 -150V 2SC4886 2SA1860	PDF
2SC3284 Abstract: 2SA1303 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1303 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3284 APPLICATIONS ·Designed for audio and general purpose applications	Original	2SA1303 -150V 2SC3284 -150V 2SC3284 2SA1303	PDF
Contextual Info: , One. J. CX TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1107 DESCRIPTION PIN I. BASE • Collector-Emitter Breakdown Voltage- 2. COLLECTOR V(BR)CEo=-150V(Min)	Original	2SA1107 -150V MT-200 -25mA; -150V;	PDF
Contextual Info: J.S.IIS.LI ^zml-tLoncmctoi iJ^ioauati, Una. 20 STERN AVE. TELEPHONE: 973 376-2922 SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 U.S.A. FAX: Silicon PNP Power Transistor (973) 376-8960 2SA1303 ft 'X DESCRIPTION • High Collector-Emitter Breakdown VoltageV(BR)CEO=-150V(Min)	Original	2SA1303 -150V 2SC3284 -25mA	PDF
2SA1068 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1068 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Designed for AF amplifier, high power amplifier applications.	Original	2SA1068 -150V -100mA; -150V; 2SA1068	PDF
2SA649 Abstract: transistor 2sa649 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA649 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) ·Wide Area of Safe Operation APPLICATIONS ·Designed for audio power amplifier applications.	Original	2SA649 -150V -25mA; -150V; 2SA649 transistor 2sa649	PDF
2SA650 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA650 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) ·Wide Area of Safe Operation APPLICATIONS ·Designed for audio power amplifier applications.	Original	2SA650 -150V -25mA; -150V; 2SA650	PDF
2SB755 Abstract: 2SD845 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB755 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SD845 APPLICATIONS ·Designed for power amplifier applications.	Original	2SB755 -150V 2SD845 -10mA; -150V; 2SB755 2SD845	PDF
2SA1166 Abstract: 100W AUDIO ic AMPLIFIER Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1166 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·High Power Dissipation APPLICATIONS ·Power amplifier applications ·Recommended for 100W high-fidelity audio frequency	Original	2SA1166 -150V -150V; 2SA1166 100W AUDIO ic AMPLIFIER	PDF
Contextual Info: , One. J. C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1068 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo=-150V(Min.) • Good Linearity of hFE	Original	2SA1068 -150V -10mA; -150V;	PDF

Contextual Info: \Jtoaucti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1166 DESCRIPTION • Collector-Emitter Breakdown VoltageV(BR)CEO=-150V(Min) • Good Linearity of hFE	Original	2SA1166 -150V MT-200 -25mA;	PDF
2sa649 Abstract: transistor a4u Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA649 DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-150V(Min.) • Wide Area of Safe Operation	Original	2SA649 -150V -25mA; -150V; 2sa649 transistor a4u	PDF
Contextual Info: Jziieu ^Emi-L.onaucto'i £/-^ioaucti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA651 DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR,cEo=-150V(Min.)	Original	2SA651 -150V -25mA; -200V;	PDF
2SB681 Abstract: 80 watts power amplifier Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB681 DESCRIPTION •High Current Capability ·Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) APPLICATIONS ·For AF power amplifier use. ·Recommended for use in output stage of 80 watts power	Original	2SB681 -150V -50mA -120V; 2SB681 80 watts power amplifier	PDF
2SA908 Abstract: 2SC1585 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA908 DESCRIPTION •High Power Dissipation: PC= 150W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min.) ·Complement to Type 2SC1585 APPLICATIONS ·Designed for amplifier and general purpose applications.	Original	2SA908 -150V 2SC1585 -50mA; -150V; 2SA908 2SC1585	PDF
2SA971 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA971 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) ·High Power Dissipation APPLICATIONS ·Designed for general purpose applications. n c . i m e	Original	2SA971 -150V -50mA; -150V; 2SA971	PDF
2SA1007 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1007 DESCRIPTION •High Current Capability ·Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) APPLICATIONS ·Designed for audio and general purpose applications.	Original	2SA1007 -150V -30mA; -150V; 2SA1007	PDF
2SA1186 Abstract: transistor p100 2SC2837 2sA1186 transistor transistor p90 y130 2sc2837 transistor transistor pnp VCEO 12V Ic 1A Y140 Y160 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1186 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2837 APPLICATIONS ·For audio and general purpose applications	Original	2SA1186 -150V 2SC2837 2SA1186 transistor p100 2SC2837 2sA1186 transistor transistor p90 y130 2sc2837 transistor transistor pnp VCEO 12V Ic 1A Y140 Y160	PDF
2sA1186 transistor Abstract: transistor p100 2SA1186 Y130 Y-140 2SC2837 Y140 Y160 5060 transistor 2sc2837 transistor Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1186 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2837 APPLICATIONS ·For audio and general purpose applications	Original	2SA1186 -150V 2SC2837 2sA1186 transistor transistor p100 2SA1186 Y130 Y-140 2SC2837 Y140 Y160 5060 transistor 2sc2837 transistor	PDF
Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA908 DESCRIPTION • High Power Dissipation: Pc= 150W(Max.)@Tc=25°C • Collector-Emitter Breakdown Voltage: V(BR)CEo=-150V(Min.)	Original	2SA908 -150V 2SC1585 -50mA; -150V;	PDF

PNP TRANSISTOR 5A 150V Search Results

PNP TRANSISTOR 5A 150V Result Highlights (5)

PNP TRANSISTOR 5A 150V Datasheets Context Search

2SA1860

2SA1303

2SA1107

2SC4886

2SC3284

2SA1068

2SA649

2SA650

2SB755

2SA1166

2sa649

2SB681

2SA908

2SA971

2SA1007

2SA1186

2sA1186 transistor