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    PNP TRANSISTOR 1000V Search Results

    PNP TRANSISTOR 1000V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PNP TRANSISTOR 1000V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N4148 SMD PACKAGE

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT23 SMD DIODE 1N4007 smd zener diode code M1 RESISTOR AXIAL 0207 FAIRCHILD 1n4007 smd diode smd zener diode code T2 smd code C2 zener diode bridge rectifier 1N4007 SMD DIODE 1N4007 DATASHEET
    Text: Document reference: PCB reference: Date: March, 20 2006 STEVAL-IHT003V1 Company: STMicroelectronics Index Quantity Reference 1 1 Triac 2 1 SCR 3 1 PNP Transistor 4 1 NPN Transistor 5 1 N-Channel Transistor 6 1 Resistor 620 1/4W 1% 7 1 Resistor 470K 1/4W 1%


    Original     		PDF STEVAL-IHT003V1 10nF/50V 1N4007 1N4148 O-220 OT-223 OT-23 1N4148 SMD PACKAGE TRANSISTOR SMD CODE PACKAGE SOT23 SMD DIODE 1N4007 smd zener diode code M1 RESISTOR AXIAL 0207 FAIRCHILD 1n4007 smd diode smd zener diode code T2 smd code C2 zener diode bridge rectifier 1N4007 SMD DIODE 1N4007 DATASHEET

    pnp transistor 1000v

    Abstract: FZT758 FZT658 DSA003716
    Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT758 ISSUE 2 – FEBRUARY 1995 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE – FZT658 PARTMARKING DETAIL – FZT758 TYPICAL CHARACTERISTICS IC/IB =10 1.6


    Original     		PDF OT223 FZT758 FZT658 -200mA, -20mA, 20MHz -100mA, -100V -20mA pnp transistor 1000v FZT758 FZT658 DSA003716

    pnp transistor 1000v

    Abstract: FMMT558 FMMT458 ZTX558 DSA003698
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 – JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE – FMMT458 PARTMARKING DETAIL – 558 TYPICAL CHARACTERISTICS 1.4 1.0 0.6 V 0.6


    Original     		PDF FMMT558 100mA FMMT458 -50mA, -100mA, -10mA, 20MHz -100V pnp transistor 1000v FMMT558 FMMT458 ZTX558 DSA003698

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 – JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE – FMMT458 PARTMARKING DETAIL – 558 TYPICAL CHARACTERISTICS 1.4 1.0 0.6 V 0.6


    Original     		PDF FMMT558 100mA FMMT458 -50mA, -100mA, -10mA, 20MHz -100V

    pnp transistor 1000v

    Abstract: FMMT558 FMMT458 DSA003671
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 – JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE – FMMT458 PARTMARKING DETAIL – 558 TYPICAL CHARACTERISTICS 1.4 1.0 0.6 V 0.6


    Original     		PDF FMMT558 100mA FMMT458 -50mA, -100mA, -10mA, 20MHz -100V pnp transistor 1000v FMMT558 FMMT458 DSA003671

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR M EDIUM POWER TRANSISTOR FM M T555 ISSUE 4 – AUGUST 2003 FEATURES * 150 Volt VCEO * 1 Amp continuous current E C COMPLEMENTARY TYPE – FMMT455 PARTMARKING DETAIL – 555 B SOT23 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL VALUE


    Original     		PDF FMMT455 100ms

    pnp transistor 1000v

    Abstract: TS665 FMMT596 FMMT596TA TS16949 PNP 1000V 100a
    Text: FMMT596 SOT 23 PNP silicon planar high voltage transistor Ordering information Device Reel size inches Tape width (mm Quantity per reel 7 8 3,000 FMMT596TA Device marking C E 596 C B B Pinout - top view E Absolute maximum ratings Parameter Symbol Value Unit


    Original     		PDF FMMT596 FMMT596TA D-81541 pnp transistor 1000v TS665 FMMT596 FMMT596TA TS16949 PNP 1000V 100a

    FMMT455

    Abstract: FMMT555 transistor ztx
    Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 ISSUE 4 – AUGUST 2003 FEATURES * 150 Volt VCEO * 1 Amp continuous current TYPICAL CHARACTERISTICS ZTX554/55-2 tr ns Switching time 200 2 -0.001 -0.01 -0.1 200 1 -1 400 100 -0.01 tr IC - Collector Current Amps


    Original     		PDF FMMT555 FMMT455 IC/10 -100mA, -10mA* -10mA, FMMT455 FMMT555 transistor ztx

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 ISSUE 4 – AUGUST 2003 FEATURES * 150 Volt VCEO * 1 Amp continuous current TYPICAL CHARACTERISTICS ZTX554/55-2 tr ns Switching time 200 2 -0.001 -0.01 -0.1 1 -0.01 -1 400 100 200 tr IC - Collector Current Amps


    Original     		PDF FMMT555 FMMT455 IC/10 -100mA, -10mA* -10mA,

    transistor VCBO 1000V IC 100mA

    Abstract: pnp transistor 1000v FMMT596 DSA003699
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT596 ISSUE 3 - NOVEMBER 1995 FMMT596 ✪ PARTMARKING DETAIL – 596 TYPICAL CHARACTERISTICS 0.4 0.4 +25 ° C 0.3 0.2 ABSOLUTE MAXIMUM RATINGS. -55 °C +25 °C +100 °C 0.2 0.1 B I+/I*=10 0.3 I+/I*=10 I+/I*=50


    Original     		PDF FMMT596 100mA 100ms -100mA -250mA -400mA -50mA, transistor VCBO 1000V IC 100mA pnp transistor 1000v FMMT596 DSA003699

    pnp transistor 1000v

    Abstract: FMMT555 FMMT455 PNP POWER TRANSISTOR SOT23 ZTX554 ZTX555 DSA003698 transistor VCBO 1000V IC 100mA
    Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 TYPICAL CHARACTERISTICS ZTX5 5 4 /5 5 -2 ts ns µs 500 Switching time - Volts -0.6 tr -0.4 V -0.2 400 4 300 3 200 2 -0.0001 -0.001 -0.01 -0.1 -1 800 tf td 400 100 200 50 1 tr -0.01 IC - Collector Current (Amps)


    Original     		PDF FMMT555 FMMT455 IC/10 100ms -10mA, -300mA, -50mA, 100MHz ZTX554 ZTX555 pnp transistor 1000v FMMT555 FMMT455 PNP POWER TRANSISTOR SOT23 ZTX554 ZTX555 DSA003698 transistor VCBO 1000V IC 100mA

    pnp transistor 1000v

    Abstract: FMMT455 FMMT555 transistor VCBO 1000V IC 100mA DSA003671
    Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 TYPICAL CHARACTERISTICS ZTX5 5 4 /5 5 -2 ts ns µs 500 Switching time - Volts -0.6 tr -0.4 V -0.2 400 4 300 3 200 2 -0.0001 -0.001 -0.01 -0.1 -1 800 tf td 400 100 200 50 1 tr -0.01 IC - Collector Current (Amps)


    Original     		PDF FMMT555 FMMT455 IC/10 100ms -10mA, -300mA, -50mA, 100MHz pnp transistor 1000v FMMT455 FMMT555 transistor VCBO 1000V IC 100mA DSA003671

    Untitled

    Abstract: No abstract text available
    Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IC/IB =10 1.6 Tamb=25°C IC/IB =20 1.4 -55°C +25°C +100°C +175°C 1.6 IC/IB =50 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 ISSUE 2 – FEBRUARY 1995 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current


    Original     		PDF OT223 FZT658 FZT758 100ms

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR -55°C +25°C +100°C +175°C IC/IB =10 1.6 IC/IB =20 1.6 IC/IB =50 1.4 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.001 0.01 0.1 1 10 20 1.4 IC/IB =10 0.01 0.1 1 -55°C +25°C +100°C +175°C VCE =10V


    Original     		PDF 100mA FMMT458 FMMT558 100ms

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


    Original     		PDF

    panasonic inverter manual vf 200

    Abstract: panasonic inverter manual vf 100 MBDHT2510 MANUAL npn transistor w26 CY-122A-P-Z
    Text: 02/04/2013 Overview Panasonic automation products Panasonic offers a broad spectrum of products for all automation tasks, sensors, PLCs, HMIs, Servo Drives and FA Components. Along with our service philosophy to advise and take care of our customers, products


    Original     		PDF RM1205-9, panasonic inverter manual vf 200 panasonic inverter manual vf 100 MBDHT2510 MANUAL npn transistor w26 CY-122A-P-Z

    Panasonic PLC FP communication

    Abstract: SIGMA RELAY
    Text: FPS Sigma Series Programmable Controllers 09/2008 FPS (Sigma) The next generation compact PLC Highlights State-of-the-art PLC technology in the most compact size plus the ability to communicate via all important modern media characterize the FPS (Sigma). With its two 100kHz pulse outputs, four high speed counters that function at up to 50kHz for


    Original     		PDF 100kHz 50kHz RS232C RS485, RM1205-9, Panasonic PLC FP communication SIGMA RELAY

    70413080

    Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
    Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919


    Original     		PDF 2N3391 SPS-953 MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919 2N4249 SPS-690, PN-2907A 70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180

    pnp transistor 1000v

    Abstract: mos Turn-off Thyristor applications of mos controlled thyristor 1000V 2A BJT SGSP363
    Text: n ^ rz 7 # , S G S -T H O M S O N 5 [L [I T [H ] M D © Ì T E C H N IC A L N O TE AN INTRODUCTION TO HIMOS INTRODUCTION The structure and characteristics of HIMOS (High Injection MOS) devices, provide circuit designers with an INSULATED GATE BIPOLAR TRANSI­


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    mos Turn-off Thyristor

    Abstract: SiC BJT pnp transistor 1000v BJT Gate Drive circuit fast thyristor 1000V MOS Controlled Thyristor
    Text: rZ J SCS-THOMSON ~7w m R 0 [H ]© i[L i© U É © M D © S t e c h n ic a l n o te AN INTRODUCTION TO HIMOS INTRODUCTION The structure and characteristics of HIMOS High Injection MOS devices, provide circuit designers with an INSULATED GATE BIPOLAR TRANSI­


    OCR Scan     		PDF

    TRANSISTOR BDX

    Abstract: TRANSISTOR BDX 285 pnp transistor 1000v TRANSISTOR BDX 53 transistor BDX 65 transistor BDX 80 bux diode darlington NPN 1000V isotop DARLINGTON ESM 749 transistor BU 184
    Text: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BUW 4ff 30 A BUW 49 20 A BUX 69 IS A J/T


    OCR Scan     		PDF BUV48 BUV47 O-22CIAB CB-117 BUV37 CB-244 CB-285 TRANSISTOR BDX TRANSISTOR BDX 285 pnp transistor 1000v TRANSISTOR BDX 53 transistor BDX 65 transistor BDX 80 bux diode darlington NPN 1000V isotop DARLINGTON ESM 749 transistor BU 184

    pnp transistor 1000v

    Abstract: transistor buv 90 bux diode darlington NPN 1000V transistor pnp transistor 600V transistor ESM 30 buv PNP transistor BU 104 NPN Transistor VCEO 1000V transistor BUX 48
    Text: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \ V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125 V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BU W 4ff 30 A BU W 49 20 A BUX 69 IS A


    OCR Scan     		PDF BUV48 BUV47 CB-244 CB-285 pnp transistor 1000v transistor buv 90 bux diode darlington NPN 1000V transistor pnp transistor 600V transistor ESM 30 buv PNP transistor BU 104 NPN Transistor VCEO 1000V transistor BUX 48

    TRANSISTOR NPN BA RV SOT - 89

    Abstract: bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124
    Text: Selection Guide Page Small Signal Transistors 44 Small Signal DMOS FETs 55 Junction FETs 56 Digital Transistor 56 Power Transistors 57 Switching Diodes 60 Schottky Diodes 63 Low Leakage Diodes 66 Ultra Low Leakage Diodes 66 Stabistor Diodes 67 Zener Diodes


    OCR Scan     		PDF CQ89N CQ89DS CQ89MS CQ89NS OT-89 CMPSS061 CMPS5062 CMPS5063 CMPS5064 CZS5064 TRANSISTOR NPN BA RV SOT - 89 bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124

    CMPZ4124

    Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
    Text: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches


    OCR Scan     		PDF OT-23 350mW CMPT8099 CMPT2222A OT-23 OT-223 OT-89 CQ89D CQ89DS CMPS5061 CMPZ4124 CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B