PNP POWER TRANSISTOR TIP102 Search Results

2SC1419

Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.

BUS48AP

Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

BU108

Abstract: 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

MJ4502 EQUIVALENT

Abstract: BU108 BU806 Complement BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ4502 High-Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — hFE = 25 – 100 @ IC = 7.5 A

2N5037

Abstract: 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi

2SA835

Abstract: transistor D 1557 bu806 equivalent 2SD436 2SD669 equivalent BU108 TL 188 TRANSISTOR PNP 2Sd525 equivalent 2sa1046 2N6021
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE9780* Advance Information PNP Silicon Power Transistor *Motorola Preferred Device The MJE9780 is designed for vertical output of 14–inch to 17–inch televisions and CRT monitors, as well as other applications requiring a 150 volt PNP transistor.

TIP42C as regulator

Abstract: BU108 2SC103 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 NSP2100 2SD68 BDX54 2SC1943 MJE2482 2SD675
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE1123 Bipolar Power PNP Low Dropout Regulator Transistor PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS The MJE1123 is an applications specific device designed to provide low–dropout linear regulation for switching–regulator post regulators, battery powered systems

tip122 tip127 audio amp

Abstract: BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ3281A* PNP MJ1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power

sec tip41c

Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power

MJE371 equivalent

Abstract: MJ13019 ST BDW83C BU108 transistor d 1557 mje521 equivalent transistor 2N6546 2N3713 MOTOROLA BDX36 equivalent IR-6062
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE371 Plastic Medium-Power PNP Silicon Transistors 4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry

IC 3526

Abstract: transistor MJ15024 tip3055 equivalent RCA1C13 BU108 2N6277 applications MJ3247 BDX54 motorola MJ3000 2N3791 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD802 Plastic High Power Silicon PNP Transistor 8 AMPERE POWER TRANSISTORS PNP SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 1.0 Adc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

TIP102

Abstract: TIP105
Contextual Info: TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER ■ GENERAL POWER SWITCHING

Contextual Info: TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER ■ GENERAL POWER SWITCHING

Contextual Info: tSsml-donctuctoi {Pioduati., One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT . AUDIO POWER AMPLIFIER

RCA423

Abstract: BD413 BD139.16 2SA698 2sc1943 BD139.10 2SC1224 BD419 2SA939 BD4112
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP D45C Complementary Silicon Power Transistor 4.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS . . . for general purpose driver or medium power output stages in CW or switching applications. • Low Collector–Emitter Saturation Voltage — 0.5 V Max

2SA1046

Abstract: BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

high gain low voltage PNP transistor

Abstract: TIP102 TIP107 transistor TIP107 transistor pnp Vcbo 25V darlington power transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -2.0V(Max)@ IC= -3A

pin configuration transistor bd140

Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

T1P42C

Abstract: Power transistor TO-220 NPN 100 V, TIP 41C TIP 41c transistor T1P42A T1P42 TIP 42c transistor T1P-42C T1P49 t1p41 tlp42c
Contextual Info: SAMSUNG S E M I C O N O U G TOR INC 14E TIP42 SERIES D | 11142 0 0 0 7 7 2 2 - 7 | TIP42/42A/42B/42C PNP EXITAXIAL SILICON TRANSISTOR T - MEDIUM POWER LINEAR N SWITCHING APPLICATIONS 73- zj • Com plem ent to T1P41/41AV41B/41C ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

107 npn

Contextual Info: MOTOROLA SC O I O D E S / O P T O J - 34 6 3 6 7 2 5 5 MOTOROLA SC <D I O D E S / O P T O SILICON POWER TRANSISTOR DICE continued) De | b3L.725S DOBTTtiT 3 | 34C 37969 D T * ' ¡? 3 -C= I DIE NO. TIPC100,101,102/ die noT IP C I 05,106,107 NPN LINE SOURCE — PL500.E268/ PNP LINE SOURCE — PL500.E269

transistor T 023

Abstract: TIP107G TRANSISTOR 023 TIP102 TIP107
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP107 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC TIP107 is designed for using in general purpose amplifier and switching applications. „ FEATURES * Low VCE SAT * High Current Gain * Complementary to TIP102

TIP107G

Abstract: TRANSISTOR 023 PNP Silicon Transistor tip107T transistor TIP107
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP107 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC TIP107 is designed for using in general purpose amplifier and switching applications. „ FEATURES * Low VCE SAT * High Current Gain * Complementary to TIP102

TIP107

Abstract: TRANSISTOR 023 transistor T 023 TIP102 TIP107G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP107 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC TIP107 is designed for using in general purpose amplifier and switching applications. „ FEATURES * Low VCE SAT * High Current Gain * Complementary to TIP102