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2SA1213
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini |
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TTA012
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini |
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TTA004B
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N |
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TTA2070
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini |
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TTA013
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.32 V / tf=65 ns / PW-Mini |
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