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    PNP LOW SATURATION TRANSISTOR SOT23 Search Results

    PNP LOW SATURATION TRANSISTOR SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC156R0G3D Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    NFM31PC276D0E3L Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    NFMJMPL226R0G5D Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    PNP LOW SATURATION TRANSISTOR SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1A; PNP: VCEO=-60V; VCE(sat)=-0.175V; IC= -1A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very


    Original     		ZXTD6717E6 OT23-6 Continuo725 PDF

    transistor pnp VCEO 12V Ic 1A

    Abstract: ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC transistor pnp 12V 1A Continuous Current Peak
    Text: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1.5A; PNP: VCEO=-12V; VCE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very


    Original     		ZXTD6717E6 OT23-6 OT23-6 transistor pnp VCEO 12V Ic 1A ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC transistor pnp 12V 1A Continuous Current Peak PDF

    4420 Transistor

    Abstract: Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23
    Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.


    Original     		ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23 PDF

    4420 Transistor

    Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
    Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.


    Original     		ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS3540F 40 V low VCEsat PNP transistor Product specification 2001 Jul 13 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS3540F FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage


    Original     		M3D425 PBSS3540F 613514/01/pp8 PDF

    ZXT10P40DE6

    Abstract: ZXT10P40DE6TA ZXT10P40DE6TC MARKING 720 NS435 DSA0037441
    Text: ZXT10P40DE6 SuperSOT 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 105m ; IC= -2A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		ZXT10P40DE6 OT23-6 OT23-6 ZXT10P40DE6 ZXT10P40DE6TA ZXT10P40DE6TC MARKING 720 NS435 DSA0037441 PDF

    2N2894AC1

    Abstract: LE17 MIL-PRF19500 QR217 marking l3d sot23
    Text: HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available


    Original     		2N2894AC1 -200mA 360mW 2N2894AC1B 2N2894AC1 LE17 MIL-PRF19500 QR217 marking l3d sot23 PDF

    ZXT10P12DE6

    Abstract: ZXT10P12DE6TA ZXT10P12DE6TC Marking 717 DSA0037437
    Text: ZXT10P12DE6 SuperSOT 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 65m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		ZXT10P12DE6 OT23-6 OT23-6 ZXT10P12DE6 ZXT10P12DE6TA ZXT10P12DE6TC Marking 717 DSA0037437 PDF

    P40D

    Abstract: ZXT13P40DE6 ZXT13P40DE6TA ZXT13P40DE6TC DSA0037469
    Text: ZXT13P40DE6 SuperSOT4 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 58m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		ZXT13P40DE6 OT23-6 OT23-6 P40D ZXT13P40DE6 ZXT13P40DE6TA ZXT13P40DE6TC DSA0037469 PDF

    marking P20D SOT23-6

    Abstract: P20D ZXT13P20DE6TC marking p20d ZXT13P20DE6 ZXT13P20DE6TA DSA0037467
    Text: ZXT13P20DE6 SuperSOT4 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 47m ; IC= -3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		ZXT13P20DE6 OT23-6 OT23-6 marking P20D SOT23-6 P20D ZXT13P20DE6TC marking p20d ZXT13P20DE6 ZXT13P20DE6TA DSA0037467 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXT13P20DE6 SuperSOT4 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 47m ; IC= -3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		ZXT13P20DE6 OT23-6 OT23-6 PDF

    sot23-6 marking 718

    Abstract: 718 SOT23 ZXT10P20DE6 ZXT10P20DE6TA ZXT10P20DE6TC DSA0037439
    Text: ZXT10P20DE6 SuperSOT 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 96m ; IC= -2.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		ZXT10P20DE6 OT23-6 OT23-6 sot23-6 marking 718 718 SOT23 ZXT10P20DE6 ZXT10P20DE6TA ZXT10P20DE6TC DSA0037439 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXT13P40DE6 SuperSOT4 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 58m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		ZXT13P40DE6 OT23-6 OT23-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXT13P12DE6 SuperSOT4 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		ZXT13P12DE6 OT23-6 OT23-6 PDF

    P12D

    Abstract: P12D marking ZXT13P12DE6 ZXT13P12DE6TA ZXT13P12DE6TC marking p12d DSA0037465
    Text: ZXT13P12DE6 SuperSOT4 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		ZXT13P12DE6 OT23-6 OT23-6 P12D P12D marking ZXT13P12DE6 ZXT13P12DE6TA ZXT13P12DE6TC marking p12d DSA0037465 PDF

    ZXT13P40DE6TC

    Abstract: P40D P-40D
    Text: ZXT13P40DE6 SuperSOT4 50V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 58m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		ZXT13P40DE6 OT23-6 OT23-6 ZXT13P40DE6TA ZXT13P40DE6TC P40D P-40D PDF

    sot23 transistor marking ZF

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5240T 40 V low VCEsat PNP transistor Product specification 2001 Oct 31 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage


    Original     		M3D088 PBSS5240T OT89/SOT223 SCA73 613514/01/pp12 sot23 transistor marking ZF PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available


    Original     		2N4209C1A 2N4209C1B -50mA 360mW 05mW/Â PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available


    Original     		2N4209C1A 2N4209C1B -50mA 360mW 05mW/Â PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTD6717E6 COM PLEM ENTARY NPN/ PNP LOW SATURATION DUAL TRANSISTORS SUM M ARY NPN: V CEO=15V; V CE sat =0.1V; IC= 1.5A; PNP: V CEO=-12V; V CE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very


    Original     		ZXTD6717E6 OT23-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available


    Original     		2N4209C1A 2N4209C1B -50mA 360mW 05mW/Â 2N4209C1B PDF

    PNP POWER TRANSISTOR SOT23

    Abstract: FT-110 sot23 6 device Marking SOT23-6 ZXTP2006E6 ZXTP2006E6TA ZXTP2006E6TC 52 sot23-6 PNP SOT23-6 .FT SOT23-6
    Text: ZXTP2006E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Packaged in the SOT23-6 outline this new low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTP2006E6 OT23-6 OT23-6 -70mV A/100mA ZXTP2006E6TA PNP POWER TRANSISTOR SOT23 FT-110 sot23 6 device Marking SOT23-6 ZXTP2006E6 ZXTP2006E6TA ZXTP2006E6TC 52 sot23-6 PNP SOT23-6 .FT SOT23-6 PDF

    free transistor equivalent book

    Abstract: PBSS5350T PBSS4350T ZD 103 ZD 103 ma free all transistor equivalent book PBSS5350
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5350T 50 V low VCEsat PNP transistor Product specification 2002 Aug 08 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat and


    Original     		M3D088 PBSS5350T SCA74 613514/01/pp12 free transistor equivalent book PBSS5350T PBSS4350T ZD 103 ZD 103 ma free all transistor equivalent book PBSS5350 PDF

    MLD882

    Abstract: free transistor equivalent book Transistor MLD882 sot23 transistor marking ZH transistor 2 marking SOT23 Transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5320T 20 V low VCEsat PNP transistor Product specification 2002 Aug 08 Philips Semiconductors Product specification 20 V low VCEsat PNP transistor PBSS5320T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat and


    Original     		M3D088 PBSS5320T SCA74 613514/01/pp12 MLD882 free transistor equivalent book Transistor MLD882 sot23 transistor marking ZH transistor 2 marking SOT23 Transistor PDF