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    PNP HIGH EMITTER BASE VOLTAGE 15 VOLT Search Results

    PNP HIGH EMITTER BASE VOLTAGE 15 VOLT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HNFZAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP100-1414-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFZAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    PNP HIGH EMITTER BASE VOLTAGE 15 VOLT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sm 170 380

    Abstract: ZDT1147 IB 115 DSA003723
    Text: SM-8 DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1147 ISSUE 1 - AUGUST 1997 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZDT1147 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -15 V Collector-Emitter Voltage


    Original     		PDF ZDT1147 OT223) 100ms 100us sm 170 380 ZDT1147 IB 115 DSA003723

    mjl4281

    Abstract: MJL4302A mjl4302 MJL428
    Text: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:


    Original     		PDF MJL4281A MJL4302A MJL4281A MJL4302A mjl4281 mjl4302 MJL428

    MJL4281A

    Abstract: MJL4302A mjl 350 mjl4302
    Text: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:


    Original     		PDF MJL4281A MJL4302A MJL4281A MJL4302A MJL4281A/D mjl 350 mjl4302

    IC 7418

    Abstract: IC 7418 by national semiconductor 7418 national 2n2222 RF Transistor 2n2222 PNP Transistor 2N2222 equivalent LM195 2N2222 application note emitter follower A-083081-2 tl 2n2222
    Text: INTRODUCTION Overload protection is perhaps most necessary in power circuitry This is shown by recent trends in power transistor technology Safe-area voltage and current handling capability have been increased to limits far in excess of package power dissipation In RF transistors devices are now available and able to withstand badly mismatched loads without


    Original     		PDF

    MJL4281A

    Abstract: MJL4302AG
    Text: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. Features • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:


    Original     		PDF MJL4281A MJL4302A MJL4281A MJL4302A MJL4281A/D MJL4302AG

    MJL4302AG

    Abstract: mjl4302a mjl4281 MJL4281AG MJL4281A SEC1100 ALL TRANSISTORS
    Text: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. Features • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:


    Original     		PDF MJL4281A MJL4302A MJL4281A MJL4302A O-264 MJL4281A/D MJL4302AG mjl4281 MJL4281AG SEC1100 ALL TRANSISTORS

    2N2222 application note emitter follower

    Abstract: PNP Transistor 2N2222 equivalent 2n2222 npn transistor general purpose LM195 AN-110 LM105 Pin layout for a 2N2222 transistor A0830
    Text: National Semiconductor Application Note 110 April 1998 INTRODUCTION Overload protection is perhaps most necessary in power circuitry. This is shown by recent trends in power transistor technology. Safe-area, voltage and current handling capability have been increased to limits far in excess of package


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MJL4281A NPN MJL4302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are power transistors for high power audio. Features • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary: • • • • Gain Linearity from 100 mA to 5 A


    Original     		PDF MJL4281A MJL4302A MJL4281A MJL4302A O-264 MJL4281A/D

    2N2222 die

    Abstract: light activated switch 2N2222 application note emitter follower AN-110 LM105 LM195 2N2222 NPN Transistor features 12v bulb national 2n2222 equivalent component of transistor 2N2222
    Text: INTRODUCTION Overload protection is perhaps most necessary in power circuitry. This is shown by recent trends in power transistor technology. Safe-area, voltage and current handling capability have been increased to limits far in excess of package power dissipation. In RF transistors, devices are now available and able to withstand badly mismatched loads without


    Original     		PDF an007418 2N2222 die light activated switch 2N2222 application note emitter follower AN-110 LM105 LM195 2N2222 NPN Transistor features 12v bulb national 2n2222 equivalent component of transistor 2N2222

    transistor a750

    Abstract: No abstract text available
    Text: NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE sat Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		PDF NSS40302PDR2G NSS40302P/D transistor a750

    C40302

    Abstract: NSS40302PDR2G
    Text: NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE sat Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		PDF NSS40302PDR2G NSS40302P/D C40302 NSS40302PDR2G

    Untitled

    Abstract: No abstract text available
    Text: NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE sat Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		PDF NSS40302PDR2G NSS40302P/D

    NJX1675PDR2G

    Abstract: No abstract text available
    Text: NJX1675PDR2G Product Preview Complementary 30 V, 6.0 A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage


    Original     		PDF NJX1675PDR2G NJX1675P/D NJX1675PDR2G

    Untitled

    Abstract: No abstract text available
    Text: MJE4343 NPN , MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. http://onsemi.com Features 16 AMPS POWER TRANSISTORS COMPLEMENTARY SILICON 160 VOLTS


    Original     		PDF MJE4343 MJE4353 MJE4343 MJE4343/D

    2SA2160

    Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
    Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series


    Original     		PDF O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027

    MJL3281A MJL1302A

    Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors
    Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors


    Original     		PDF MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A MJL3281A-D complementary npn-pnp power transistors

    MJ3281A

    Abstract: MJ1302A Motorola Bipolar Power Transistor Data complementary npn-pnp power transistors transistor pnp 3015 MJ1302 LOW FREQUENCY POWER bipolar npn TRANSISTOR to3 motorola bipolar transistor Motorola Power Transistor
    Text: MOTOROLA Order this document by MJ3281A/D SEMICONDUCTOR TECHNICAL DATA NPN Designer's MJ3281A* PNP MJ1302A*  Data Sheet Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS


    Original     		PDF MJ3281A/D MJ3281A* MJ1302A* MJ3281A MJ1302A 204AA MJ3281A/D* Motorola Bipolar Power Transistor Data complementary npn-pnp power transistors transistor pnp 3015 MJ1302 LOW FREQUENCY POWER bipolar npn TRANSISTOR to3 motorola bipolar transistor Motorola Power Transistor

    MJD253

    Abstract: No abstract text available
    Text: MJD243 NPN , MJD253 (PNP) Preferred Device Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features http://onsemi.com 4.0 A, 100 V, 12.5 W


    Original     		PDF MJD243 MJD253 MJD243 MJD253

    Untitled

    Abstract: No abstract text available
    Text: NJX1675PDR2G Complementary 30 V, 6.0 A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage


    Original     		PDF NJX1675PDR2G NJX1675P/D

    NJX1675PDR2G

    Abstract: No abstract text available
    Text: NJX1675PDR2G Complementary 30 V, 6.0 A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage


    Original     		PDF NJX1675PDR2G NJX1675P/D NJX1675PDR2G

    2N5153

    Abstract: No abstract text available
    Text: PNP SILICON TRANSISTOR HIGH-FREQUENCY POWER TRANSISTORS • 15 m J Reverse Energy Rating with Ic = 10 A and 4 V Reverse Bias MAXIMUM RATINGS Rating Collector-Em itter Voltage 1 Collector-Base Voltage Emitter-Base Voltage Collector C u rren t - Continuous


    OCR Scan     		PDF 2N5153

    chip die npn transistor

    Abstract: MM1007
    Text: 0PLESSEY FEBRUARY 1989 Semiconductors MM Series Macrochip Analog Semicustom Arrays DESCRIPTION The MM "Macrochip" series utilizes a standard bipolar pro­ cess allowing for operation at voltages up to 20V. Typical circuit blocks for the MM series include pre-amplifiers, com­


    OCR Scan     		PDF PS2314, chip die npn transistor MM1007

    Untitled

    Abstract: No abstract text available
    Text: KSB817 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER • High Current Capability • High Power Dissipation • Complementary to KSD1047 ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating U nit Collector Base Voltage VcBO - 160


    OCR Scan     		PDF KSB817 KSD1047

    op amp 741 model PSpice

    Abstract: pnp transistor 3609 pnp npn dual emitter connected plessey capacitor MM-10004 transistor 2x MM1008 DN660 me 4946 operational amplifier discrete schematic
    Text: Q PLESSEY FEBRUARY 1989 Semiconductors MM Series Macrochip Analog Semicustom Arrays DESCRIPTION The MM "Macrochip" series utilizes a standard bipolar pro­ cess allowing for operation at voltages up to 20V. Typical circuit blocks for the MM series include pre-amplifiers, com­


    OCR Scan     		PDF PS2314, op amp 741 model PSpice pnp transistor 3609 pnp npn dual emitter connected plessey capacitor MM-10004 transistor 2x MM1008 DN660 me 4946 operational amplifier discrete schematic