PNP BC559 TRANSISTOR Search Results

TRANSISTOR bc549

Abstract: BC549 BC559 BC559C BP317 transistor BC559
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC559 PNP general purpose transistor Product specification Supersedes data of 1997 Jun 03 1999 May 28 Philips Semiconductors Product specification PNP general purpose transistor BC559 FEATURES PINNING

TRANSISTOR bc560

Abstract: BC560 C420 BC559
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. BC559/560 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC BC559 Collector-Base Voltage BC560 C ollector-Em itter BC559 Voltage BC560 Emitter-Base Voltage

BC549 input

Abstract: BC557C
Contextual Info: BC556 . BC559 BC556 . BC559 General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2011-08-19 Power dissipation – Verlustleistung 18 9 16 C BE 2 x 2.54 Dimensions - Maße [mm] 500 mW

BC559C

Abstract: BC549 BC559 SC-43A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC559 PNP general purpose transistor Product specification Supersedes data of 1999 May 28 2004 Nov 05 Philips Semiconductors Product specification PNP general purpose transistor BC559 FEATURES PINNING

BC559

Abstract: TRANSISTOR bc560 BC560 bc560 c
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC559/560 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. FEATURE • For Complementary With NPN Type BC549/550. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC BC559 Collector-Base Voltage BC560 C ollector-Em itter BC559 Voltage

BC560 MOTOROLA

Abstract: BC560C BC559B BC559 BC560
Contextual Info: MOTOROLA Order this document by BC559/D SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors PNP Silicon BC559, B, C BC560C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC559 BC560 Unit Collector – Emitter Voltage VCEO –30 –45 Vdc Collector – Base Voltage

Contextual Info: MOTOROLA Order this document by BC559/D SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors PNP Silicon BC559, B, C BC560C COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating Symbol BC559 BC560 Unit Collector-Em itter Voltage VCEO -3 0 -4 5 Vdc Collector-Base Voltage

Contextual Info: BC556 . BC559 BC556 . BC559 General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-05-31 Power dissipation – Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 500 mW Plastic case

bc559c

Abstract: MAM281
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC559 PNP general purpose transistor Product data sheet Supersedes data of 1999 May 28 2004 Nov 05 NXP Semiconductors Product data sheet PNP general purpose transistor BC559 FEATURES PINNING • Low current max. 100 mA

BC547 CBE

Abstract: BC548 CBE bc549 equivalent BC558 bc558c datasheet 10D3 BC546 BC549 BC556 BC557
Contextual Info: BC556 . BC559 BC556 . BC559 General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-05-31 Power dissipation – Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 500 mW Plastic case

transistor BC559

Abstract: BC549 DATASHEET BC559 BC559C pnp bc559 transistor BC549 SC-43A transistor BC549 hfe
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC559 PNP general purpose transistor Product data sheet Supersedes data of 1999 May 28 2004 Nov 05 NXP Semiconductors Product data sheet PNP general purpose transistor BC559 FEATURES PINNING • Low current max. 100 mA

bc559

Abstract: BC559B BC560
Contextual Info: BC559 Low Noise Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol BC559 BC560 Unit Collector −Emitter Voltage VCEO −30 −45 Vdc Collector −Base Voltage VCBO −30 −50 Vdc Emitter −Base Voltage VEBO −5.0 Vdc Collector Current — Continuous

BC560

Abstract: bc559 TRANSISTOR bc560 transistor BC559
Contextual Info: SEMICONDUCTOR BC559/560 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. B FEATURE C A ・For Complementary with NPN Type BC549/550. N E K G MAXIMUM RATING Ta=25℃ SYMBOL RATING UNIT -30 BC559 VCBO Collector-Base Voltage V BC560 -50

BC560C

Abstract: BC559 BC559B BC560
Contextual Info: Low Noise Transistors BC559, B, C BC560C PNP Silicon MAXIMUM RATINGS Rating Symbol BC559 BC560 Unit Collector–Emitter Voltage VCEO –30 –45 Vdc Collector–Base Voltage VCBO –30 –50 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous

BC558B

Abstract: bc560
Contextual Info: BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor Features • • • • Switching and Amplifier High-Voltage: BC556, VCEO = -65 V Low-Noise: BC559, BC560 Complement to BC546, BC547, BC548, BC549, and BC550 1 TO-92 1. Collector 2. Base 3. Emitter

Contextual Info: SEMICONDUCTOR BC559/560 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. FEATURE 1999. 11. 30 Revision No : 2 1/1

BC560

Abstract: TRANSISTOR bc560 BC559
Contextual Info: SEMICONDUCTOR BC559/560 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. FEATURE B C A For Complementary with NPN Type BC549/550. N E K MAXIMUM RATING Ta=25 G J D SYMBOL -30 VCBO Collector-Base Voltage BC560 BC559 V -50 VEBO -5 V Collector Current

BC560 philips

Abstract: B559C BC560 BC560B BC560C TRANSISTOR BC560C philips bc560c BC559A b559 TRANSISTOR bc560
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC559; BC560 PNP general purpose transistors Product specification Supersedes data of 1997 Mar 14 File under Discrete Semiconductors, SC04 1997 Jun 03 Philips Semiconductors Product specification PNP general purpose transistors

transistor potencia

Abstract: PA6015 t092 ebc Transistor BC558 ebc CEB npn PB6025 PA6014 transistores BF494
Contextual Info: SI» I1ICR0ELETR0NICA S/A SDE D • fl531Bñ4 OOODOOfl 4 ■ TRANSISTORES Term. Tipo BC546 Pol. NPN BC547 NPN BC548 NPN BC549 NPN BC556 PNP BC557 PNP BC558 BC559 BF199 BF494 BF495 PNP PNP NPN NPN NPN PA6013 NPN PB6013 PNP PA6014 NPN PB6014 PNP PA6015 NPN PB6015 PNP

BC557

Abstract: BC559 CBC556 bc546.bc549
Contextual Info: BC556 thru BC559 Small Signal Transistors PNP TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) max. ∅ 0.022 (0.55) Features • PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • These transistors are subdivided into three groups

BC559

Abstract: BC557 hie hre hfe cl 100 hie hre hfe
Contextual Info: BC556 THRU BC559 Small Signal Transistors PNP TO-92 FEATURES PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. ♦ These transistors are subdivided into three groups A, B and C according to their current gain. The type BC556 is avail­

BC559

Abstract: pin configuration NPN transistor BC558 pin configuration pnp transistor BC558 BC557 hie hre hfe BC556 Amplifier with transistor bc549 BC549 input BC557 BC549 NPN transistor download datasheet pin configuration npn transistor BC557
Contextual Info: BC556 THRU BC559 Small Signal Transistors PNP TO-92 .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) ♦ ♦ max. ∅ .022 (0.55) ♦ .098 (2.5) FEATURES PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. These transistors are subdivided into

Contextual Info: FORWARD ETTERNATIONAL ELECTRONICS LID . BC559 SEMICONDUCTOR _ TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER Package: TO-92 * Complement to BC549 * Low Noise ABSOLUTE MAXIMUM RATINGS at Tan*=2$°C C haracteristic • Symbol R ating

BC549

Abstract: bc550 Amplifier with transistor BC549 transistor BC550 bc549 noise figure transistor BC549 hfe transistor BC549 bc550 noise figure BC549 NPN transistor B200-450
Contextual Info: SEMICONDUCTOR BC549/550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE ・For Complementary with PNP Type BC559/560. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT 30 BC549 VCBO Collector-Base Voltage V