Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PNP 500V Search Results

    PNP 500V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    PNP 500V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pnp 500v

    Abstract: No abstract text available
    Text: High Voltage Transistors PNP High Voltage Transistors 300 to 500 Volts The Zetex range of 300V to 500V transistors provide optimized high performance PNP specifications in a variety of through hole and surface mount packages. Providing very efficient high voltage operation, these devices are ideally suited to line


    Original
    PDF OT223 OT223 pnp 500v

    nte175

    Abstract: NTE38
    Text: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high– speed switching and linear amplifier applications for high–voltage operational amplifiers, switching


    Original
    PDF NTE38 NTE175 NTE38: 200mA NTE175: NTE38 875mA nte175

    inductive proximity sensor

    Abstract: LE16SF02DPO AB Electronic "inductive Proximity Sensor"
    Text: Inductive Proximity Sensor • Plastic V-Body • 2m Cable • PNP / Normally Open Item Code LE16SF02DPO Sensing Distance 2mm Mounting Flushed Output PNP NO Supply Voltage 10…30VDC Standard Target Fe 16*16*1t Switch Shifts B±10% Hysteresis 1…20% Repeated Error


    Original
    PDF LE16SF02DPO 30VDC B200mA B10mA 1000Hz 000V/AC 50/60Hz L50MM 500VDC inductive proximity sensor LE16SF02DPO AB Electronic "inductive Proximity Sensor"

    K900 transistor

    Abstract: FX2N-1HC Transistor 1hc K4010 bfm 31 K1234 M8002 M8000 FX2N HARDWARE MANUAL Denki
    Text: 2 3.3 Buffer memories BFM WIRING BFM number PNP output encoders PNP output encoders 3.3k FX2N-1HC A24+ 1.5k A12+ 0.27k A5 + 0.1k A B24+ 2.2kW B12+ B5 + B 12 to 24V inputtable 1.5k XP24 0.5k XP 5 0.2k COMP 2.2kW 12 to 24V inputtaable XD24 XD 5 COMD Shielding Wire


    Original
    PDF JY992D65401B J24532 JY992D65401 JY992D65401A K900 transistor FX2N-1HC Transistor 1hc K4010 bfm 31 K1234 M8002 M8000 FX2N HARDWARE MANUAL Denki

    pnp 500v

    Abstract: vbe 10v, vce 500v NPN Transistor NTE175 NTE38
    Text: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch TO66 Type Package Description: The NTE38 (PNP) and NTE175 (NPN) are complementary silicon transistors in a TO66 type package designed for high−speed switching and linear amplifier applications for high−voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.


    Original
    PDF NTE38 NTE175 NTE38: 200mA NTE175: NTE38 875mA pnp 500v vbe 10v, vce 500v NPN Transistor NTE175

    s41 hall effect sensor s41

    Abstract: sensor sr21 datalogic DATA SENSOR TLU-015 D50NK LASER ILLUMINATOR hall effect sensor s41
    Text: SENSORS, SAFETY & MEASUREMENT Short Form Catalogue 2014 I 2015 www.acdc.co.za PRODUCT PICTURE OUTPUT SPECIFICATIONS PAGE • 3 Wire VDC PNP NO-NC, NPN NO-NC 1 • 2 Wire VDC NO-NC 1 • 2 Wire VAC NO-NC 1 • Terminal Block VDC PNP NO-NC, NPN NO-NC 2 • 2 Wire VAC/VDC NO, NC


    Original
    PDF 4-20mA s41 hall effect sensor s41 sensor sr21 datalogic DATA SENSOR TLU-015 D50NK LASER ILLUMINATOR hall effect sensor s41

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT560Q 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features 


    Original
    PDF FMMT560Q -500V -150mA 500mA 100mA AEC-Q101 DS37020

    TRANSISTOR 0835

    Abstract: transistor F12 TSA874 transistor sot 223
    Text: TSA874 PNP Silicon Planar High Voltage Transistor SOT-223 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -500V BVCEO -500V IC -150mA VCE SAT Ordering Information Features ● ● -0.5V @ IC / IB = -50mA / -10mA Low Saturation Voltages


    Original
    PDF TSA874 OT-223 -500V -150mA -50mA -10mA -50mA TSA874CW TRANSISTOR 0835 transistor F12 TSA874 transistor sot 223

    TSA874

    Abstract: No abstract text available
    Text: TSA874 PNP Silicon Planar High Voltage Transistor SOT-223 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO -500V BVCEO -500V IC -150mA VCE SAT Ordering Information Features ● ● -0.5V @ IC / IB = -50mA / -10mA Low Saturation Voltages


    Original
    PDF TSA874 OT-223 -500V -150mA -50mA -10mA -50mA TSA874CW TSA874

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DXTP560BP5 ADVANCE INFORMATION 500V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR POWERDI 5 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -500V IC = -150mA Continuous Collector Current


    Original
    PDF DXTP560BP5 -500V -150mA OT223; AEC-Q101 J-STD-020 DS35054

    pnp 500v

    Abstract: A8 diode sot-23 marking code B2 PNP Epitaxial Silicon Transistor sot-23 SOT-23 marking a8 tsa884 hFE is transistor TSA88
    Text: TSA884 PNP Silicon Planar High Voltage Transistor SOT-23 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Base 3. Collector BVCBO -500V BVCEO -500V IC -150mA VCE SAT Features ● ● Ordering Information Low Saturation Voltages Excellent gain characteristics specified up to -50mA


    Original
    PDF TSA884 OT-23 -500V -150mA -50mA TSA884CX -50mA -10mA pnp 500v A8 diode sot-23 marking code B2 PNP Epitaxial Silicon Transistor sot-23 SOT-23 marking a8 tsa884 hFE is transistor TSA88

    TRANSISTOR 0835

    Abstract: PNP transistor 263 TSA874
    Text: TSA874 PNP Silicon Planar High Voltage Transistor SOT-223 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO -500V BVCEO -500V IC -150mA VCE SAT Features ● ● Ordering Information Low Saturation Voltages Excellent gain characteristics specified up to -50mA


    Original
    PDF TSA874 OT-223 -500V -150mA -50mA TSA874CW -50mA -10mA TRANSISTOR 0835 PNP transistor 263 TSA874

    TSA894

    Abstract: No abstract text available
    Text: TSA894 PNP Silicon Planar High Voltage Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Base 3. Collector BVCBO -500V BVCEO -500V -150mA IC VCE SAT Features   Ordering Information Low Saturation Voltages Excellent gain characteristics specified up to -50mA


    Original
    PDF TSA894 -500V -150mA -50mA TSA894CT -50mA -10mA TSA894

    pnp 500v

    Abstract: Silicon PNP Epitaxial Planar Transistor high gain low voltage PNP transistor TO-92 high voltage transistor
    Text: TSA894 PNP Silicon Planar High Voltage Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Base 3. Collector BVCBO -500V BVCEO -500V IC -150mA VCE SAT Features ● ● Ordering Information Low Saturation Voltages Excellent gain characteristics specified up to -50mA


    Original
    PDF TSA894 -500V -150mA -50mA TSA894CT -50mA -10mA pnp 500v Silicon PNP Epitaxial Planar Transistor high gain low voltage PNP transistor TO-92 high voltage transistor

    TSA884

    Abstract: No abstract text available
    Text: TSA884 PNP Silicon Planar High Voltage Transistor SOT-23 PRODUCT SUMMARY Pin Definition: 1. Base 2. Emitter 3. Collector BVCBO -500V BVCEO -500V IC -150mA VCE SAT Features ● ● Ordering Information Low Saturation Voltages Excellent gain characteristics specified up to -50mA


    Original
    PDF TSA884 OT-23 -500V -150mA -50mA TSA884CX -50mA -10mA TSA884

    Untitled

    Abstract: No abstract text available
    Text: TSA884 PNP Silicon Planar High Voltage Transistor SOT-23 PRODUCT SUMMARY Pin Definition: 1. Base 2. Emitter 3. Collector BVCBO -500V BVCEO -500V -150mA IC VCE SAT Features   Ordering Information Low Saturation Voltages Excellent gain characteristics specified up to -50mA


    Original
    PDF TSA884 OT-23 -500V -150mA -50mA TSA884CX -50mA -10mA

    Untitled

    Abstract: No abstract text available
    Text: TSA874 PNP Silicon Planar High Voltage Transistor SOT-223 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO -500V BVCEO -500V -150mA IC VCE SAT Features   Ordering Information Low Saturation Voltages Excellent gain characteristics specified up to -50mA


    Original
    PDF TSA874 OT-223 -500V -150mA -50mA TSA874CW -50mA -10mA

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DXTP560BP5 ADV AN CE I N FORM AT I ON 500V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR POWERDI 5 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -500V IC = -150mA Continuous Collector Current


    Original
    PDF DXTP560BP5 -500V -150mA OT223; AEC-Q101 DS35054

    FMMT560T

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT560 500V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • BVCEO > -500V IC = -150mA high Continuous Collector Current Excellent hFE Characteristics up to IC = 100mA


    Original
    PDF FMMT560 -500V -150mA 100mA AEC-Q101 J-STD-020 MIL-STD-202, DS33102 FMMT560T

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT560 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT223 Features Mechanical Data •         BVCEO > -500V IC = -150mA High Continuous Current ICM = -500mA Peak Pulse Current Lead-Free Finish; RoHS compliant Notes 1 & 2


    Original
    PDF FZT560 OT223 -500V -150mA -500mA AEC-Q101 J-STD-020 MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT560 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data •         BVCEO > -500V IC = -150mA high Continuous Collector Current ICM Up to 500mA Peak Pulse Current Excellent hFE Characteristics up to IC = 100mA


    Original
    PDF FMMT560 -500V -150mA 500mA 100mA AEC-Q101 J-STD-020 DS33102

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original
    PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    Yamatake hpx-t4

    Abstract: Yamatake hpx Yamatake HPX T1 Yamatake hpx t4 "Digital Display" HPX-T yamatake hpx series Yamatake HPX V1 hpx yamatake EN61000-4-2
    Text: SR. N o. Yamatake Corporation CATALOG LISTING H P X -T 3 H P X -T 4 H P X -T V 3 H P X -T V 4 SPECIFICATIONS 51.8 45 32.3 NPN PNP NPN PNP OUTPUT OPEN COLLECTOR OPEN COLLECTOR OPEN COLLECTOR OPEN COLLECTOR LIGHT SOURCE RED LED GREEN LED O F F -D E L A Y DISPLAY


    OCR Scan
    PDF 2000min 5000min 10000min ad41635e Yamatake hpx-t4 Yamatake hpx Yamatake HPX T1 Yamatake hpx t4 "Digital Display" HPX-T yamatake hpx series Yamatake HPX V1 hpx yamatake EN61000-4-2

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)


    OCR Scan
    PDF 5-500V MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 MJ10012 MJ13015