PNP 200V 5A SWITCHING CHARACTERISTICS Search Results

pnp 200v 5a switching characteristics

Abstract: pnp 200v 2SA1250 200v 5a transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1250 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·Low Collector Saturatioin Voltage: VCE(sat)= -1.0V(Max.)@ IC= -5A APPLICATIONS ·Designed for general-purpose power switching applications.

ZTX956

Abstract: DSA003780
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX956 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -770 -900 mV IC=-2A, VCE=-5V* Static Forward Current Transfer Ratio

Contextual Info: , U na. J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1250 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min) • Low Collector Saturatioin Voltage.)= -1.0V(Max.)@ lc= -5A

BZX85C12V

Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes

2SC2607

Abstract: 2SA1116 pnp 200v 5a switching characteristics pnp 200v 5a switching times 2SA1116 equivalent
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications.

2SC2607

Abstract: 2SA1116 pnp 200v 5a switching times 2SA1116 equivalent 200v 5a transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications.

NPN triple diffused 60V

Abstract: 2N2658 JAN2N2880 JAN2N3749 JAN2N3996 JAN2N3999 SDT9001 SDT9012
Contextual Info: -JGlitron ÄTM >© MEDIUM TO HIGH VOLTAGE, FAST SWITCHING Devices, Inc. NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* (FORMERLY 84 CHIP NUM BER cf] CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)

2SC3857

Abstract: 2SA1493
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1493 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3857 APPLICATIONS ·For audio and general purpose applications

300pF

Abstract: NPN triple diffused 60V 2N4070 2N4071 JAN2N4150 JAN2N5237 JAN2N5238 SDT7601 SDT7618 SDT7A05
Contextual Info: ^olîtran Devices. Inc Ä ¥ M ,© MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* (FORMERLY 85 CHIP NUMBER dfl CONTACT METALLIZATION Base and emitter: > 30,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)

JAN2N

Contextual Info: Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPIM EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* FORMERLY 84 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilv er" also available)

2SA1250

Contextual Info: JMnic Product Specification 2SA1250 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・High breadown voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications PINNING see Fig.2 PIN

2SA1250

Contextual Info: SavantIC Semiconductor Product Specification 2SA1250 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Excellent safe operating area ·High breadown voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications PINNING see Fig.2

2SA1250

Contextual Info: Inchange Semiconductor Product Specification 2SA1250 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Excellent safe operating area ·High breadown voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications PINNING see Fig.2

Contextual Info: 8368602 SOLITRON DEVICES INC ~TS 95D 02 86 3 D 3 3 - t / - DE|fl3bôb02 OOOEflk.3 E | Devices. Inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* (FORMERLY 85 CHIP NUMBER CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum

Contextual Info: FZT955 FZT956 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2 - OCTOBER 1995_ FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps

PNP TRANSISTOR 0.1A 60V

Abstract: 2n2658 Solitron
Contextual Info: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC _9 5 D S0LITR0N DEVICES INC "TS 02861 D T ~~2S~- DF|fl3bflbDa DDDEflbl M [o [y]©Tr ©ättäil < M EDIUM TO HIGH VOLTAGE, FAST SWITCHING IJ'ëEÊùi'oa Devices. Inc NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* FORMERLY 84)

SDT7601

Contextual Info: 8 3 6 8 6 0 2 SO L IT RO N D E V I C E S ELEMENT NUMBER flb INC 86 D 0 2 5 7 5 dF | fl3hfib02 0 0D 5 S7 S fi |~_ 185 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 3 0 .0 0 0 A Aluminum

2SA1493

Abstract: pnp 200v 5a switching characteristics 2SC3857
Contextual Info: Inchange Semiconductor Product Specification 2SA1493 Silicon PNP Power Transistors • DESCRIPTION ·With MT-200 package ·Complement to type 2SC3857 APPLICATIONS ·Audio and general purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to

2SA1493

Abstract: 2SC3857
Contextual Info: SavantIC Semiconductor Product Specification 2SA1493 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·Complement to type 2SC3857 APPLICATIONS ·Audio and general purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SA1493

Abstract: 2SC3857
Contextual Info: JMnic Product Specification 2SA1493 Silicon PNP Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SC3857 APPLICATIONS ・Audio and general purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

FZT855

Abstract: FZT956 FZT955
Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT955 FZT956 ISSUE 3 – MARCH 2005 FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps C

2SC3857

Abstract: 2SA1493 MT20
Contextual Info: 2SA1493 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3857 –200 VCBO •Electrical Characteristics Conditions V ICBO VCB=–200V –100max VEB=–6V –100max µA IC=–50mA –200min V 2SA1493 Unit –200 V IEBO VEBO –6 V V(BR)CEO IC

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX956 ISSUE 3 – JUNE 94 FEATURES * 2 Amps continuous current * Up to 5 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 2 Amps * Spice model available C B E E-Line

2SA1493

Abstract: 2SC3857 DSA0016503
Contextual Info: 2SA1493 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3857 –200 VCBO •Electrical Characteristics Conditions Ratings Unit V ICBO VCB=–200V –100max µA VEB=–6V –100max µA IC=–50mA –200min V VCEO –200 V IEBO VEBO –6 V V(BR)CEO