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    PNP 200V Search Results

    PNP 200V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CS4200V-01L Coilcraft Inc Current Sense Transformer, 35A, ROHS COMPLIANT Visit Coilcraft Inc
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    PNP 200V Datasheets Context Search

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    10 amp npn power transistors

    Abstract: pnp 200v Central Electronic Central Semiconductor datasheets 140v NPN CTLT853-M833 CTLT953-M833 TLM833
    Text: PRODUCT announcement Low VCE SAT Power Transistors in a Tiny Leadless Module CTLT853-M833 6 Amp/200V (NPN) CTLT953-M833 5 Amp/140V (PNP) TLM833 Sample Devices features available • High Voltage (200V NPN, 140V PNP) upon request. • High Current (IC = 6.0A NPN, 5.0A PNP)


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    PDF CTLT853-M833 Amp/200V CTLT953-M833 Amp/140V TLM833 T-223 10 amp npn power transistors pnp 200v Central Electronic Central Semiconductor datasheets 140v NPN CTLT853-M833 CTLT953-M833 TLM833

    mpsa92 transistor

    Abstract: Transistor MPSA92
    Text: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES 1 * High Collector-Emitter voltage:


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    PDF MPSA92 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW MPSA92 MPSA93 mpsa92 transistor Transistor MPSA92

    MPSA92

    Abstract: No abstract text available
    Text: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES 1 * High Collector-Emitter voltage:


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    PDF MPSA92 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW MPSA93

    Untitled

    Abstract: No abstract text available
    Text: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES 1 * High Collector-Emitter voltage:


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    PDF MPSA92 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW MPSA92 MPSA93

    MPSA92

    Abstract: MPS-A92
    Text: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 FEATURES * High Collector-Emitter voltage:


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    PDF MPSA92 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW OT-89 MPSA92 MPSA93 MPS-A92

    MPSA92

    Abstract: No abstract text available
    Text: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 FEATURES * High Collector-Emitter voltage:


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    PDF MPSA92 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW OT-89 MPSA93

    SOT-23 2D

    Abstract: sot 23 2D pnp transistor 300v sot23 MMBTA92 MPSA92 MPSA93
    Text: UTC MMBTA92 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 2 1 FEATURES * High Collector-Emitter voltage: VCEO=-300V


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    PDF MMBTA92 MMBTA92 -300V 350mW OT-23 MPSA93 MPSA92 625mW 100MHz QW-R206-005 SOT-23 2D sot 23 2D pnp transistor 300v sot23 MPSA92 MPSA93

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBTA92 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 2 1 FEATURES * High Collector-Emitter voltage: VCEO=-300V


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    PDF MMBTA92 MMBTA92 -300V 350mW OT-23 -30sing QW-R206-005

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBTA92 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 FEATURES * High Collector-Emitter voltage: VCEO=-300V UTC MMBTA92


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    PDF MMBTA92 MMBTA92 -300V MMBTA92) 625mW OT-23 MPSA93 MPSA92

    MPSA93

    Abstract: PZTA92 PZTA93
    Text: UTC PZTA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC PZTA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 2 1 3 FEATURES * High Collector-Emitter voltage:


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    PDF PZTA92 PZTA92/93 -300V PZTA92) -200V PZTA93) 1000mW OT-223 PZTA92 PZTA93 MPSA93 PZTA93

    Untitled

    Abstract: No abstract text available
    Text: UTC PZTA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC PZTA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 2 3 FEATURES * High Collector-Emitter voltage:


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    PDF PZTA92 PZTA92/93 -300V PZTA92) -200V PZTA93) 1000mW OT-223 PZTA92 PZTA93

    MMBTA92G

    Abstract: MMBTA92 MMBTA92-AE3-R MMBTA92L MMBTA92L-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA92 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR „ DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. „ FEATURES * High Collector-Emitter voltage: VCEO=-300V


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    PDF MMBTA92 MMBTA92 -300V 350mW MMBTA92L MMBTA92G MMBTA92-AE3-R MMBTA92L-AE3-R MMBTA92G-AE3-R OT-23 MMBTA92G MMBTA92-AE3-R MMBTA92L

    MPSA92L

    Abstract: mpsa92 MPSA92-T92-K MPS-A92A MPSA92 datasheet Mpsa92/93 MPSA93 mpsa92g mpsa92a high voltage pnp transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA92/93 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR „ DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. „ FEATURES * High Collector-Emitter voltage:


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    PDF MPSA92/93 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW MPSA92L/MPSA93L MPSA92G/MPSA93G MPSA92-AB3-R MPSA92L mpsa92 MPSA92-T92-K MPS-A92A MPSA92 datasheet MPSA93 mpsa92g mpsa92a high voltage pnp transistor

    MMBTA92G

    Abstract: 102 TRANSISTOR MMBTA92 MMBTA92-AE3-R MMBTA92L MMBTA92L-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA92 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR „ DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. „ FEATURES * High Collector-Emitter voltage: VCEO=-300V


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    PDF MMBTA92 MMBTA92 -300V 350mW MMBTA92L MMBTA92G MMBTA92-AE3-R MMBTA92L-AE3-R MMBTA92G-AE3-R OT-23 MMBTA92G 102 TRANSISTOR MMBTA92-AE3-R MMBTA92L MMBTA92L-AE3-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA92/93 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR „ DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. „ FEATURES * High Collector-Emitter voltage:


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    PDF MPSA92/93 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW MPSA92L-AB3-R MPSA92G-AB3-R MPSA92L-T92-B

    AL 102 pnp transistor

    Abstract: transistor marking SA p sot-23 MMBTA92 MMBTA92-AE3-R MMBTA92L MMBTA92L-AE3-R SOT-23 2D transistor 5w marking 2D
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA92 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR 3 DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 2 FEATURES SOT-23 * High Collector-Emitter voltage: VCEO=-300V


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    PDF MMBTA92 MMBTA92 OT-23 -300V 350mW MMBTA92L MMBTA92-AE3-R MMBTA92L-AE3-R AL 102 pnp transistor transistor marking SA p sot-23 MMBTA92-AE3-R MMBTA92L MMBTA92L-AE3-R SOT-23 2D transistor 5w marking 2D

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA92 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR  3 DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier.  2 1 SOT-23 FEATURES JEDEC TO-236


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    PDF MMBTA92 MMBTA92 OT-23 O-236) -300V 350mW MMBTA92G-AE3-R QW-R206-005

    TIP522

    Abstract: No abstract text available
    Text: TIP522 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 200V 0.41 (0.016)


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    PDF TIP522 O205AD) 1-Aug-02 TIP522

    BSS74

    Abstract: No abstract text available
    Text: BSS74 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


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    PDF BSS74 O206AA) 10/30m 2-Aug-02 BSS74

    Untitled

    Abstract: No abstract text available
    Text: 2N4930 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 200V 0.41 (0.016)


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    PDF 2N4930 O205AD) 10/10mParameter 10/10m 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: BSS74 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


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    PDF BSS74 O206AA) 10/30m 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N4930 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 200V 0.41 (0.016)


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    PDF 2N4930 O205AD) 10/10m 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: TIP522 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 200V 0.41 (0.016)


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    PDF TIP522 O205AD) 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: BSS74 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


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    PDF BSS74 O206AA) 10/30m 19-Jun-02