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    PN JUNCTION DIODE STRUCTURE Search Results

    PN JUNCTION DIODE STRUCTURE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TL074ACNSR
    		Texas Instruments Low-Noise JFET-Input Operational Amplifier 14-SO 0 to 70 Visit Texas Instruments Buy
    TL082BCD
    		Texas Instruments JFET-Input Operational Amplifier 8-SOIC 0 to 70 Visit Texas Instruments Buy
    TL084ACDRG4
    		Texas Instruments JFET-Input Operational Amplifier 14-SOIC 0 to 70 Visit Texas Instruments Buy
    TL092CPSR
    		Texas Instruments JFET-input operational amplifiers 8-SO 0 to 70 Visit Texas Instruments Buy
    TL288CP
    		Texas Instruments JFET-input Operational Amplifiers 8-PDIP 0 to 70 Visit Texas Instruments Buy

    PN JUNCTION DIODE STRUCTURE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    pn junction diode structure

    Abstract: PIN diode
    Contextual Info: Section 2 PIN Diode Features A PIN diode has an intrinsic semiconductor layer I layer in the middle of the PN junction, which makes it a diode with a P-I-N junction. It is a high frequency variable resistor that can change its high frequency series resistance (rf) by controlling the forward current applied to the junction.


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    position sensitive diode circuit

    Abstract: PD-S30M
    Contextual Info: Waitrony Infrared Pin Photo Diode Model No.: PD-S30M 1. General Description: Dimensions The PD-S30M is a high sensitive and high speed PN junction silicon photo diode with PIN structure, which is mounted in a black epoxy and surface mount package. 1. Cathode


    OCR Scan     		PD-S30M PD-S30M position sensitive diode circuit PDF

    PD-37BRC

    Abstract: infrared circuit diagram
    Contextual Info: Waitrony Infrared Pin Photo Diode Model No.: PD-37BRC 1. General Description: Dimensions The PD-37BRC consists of a PN junction silicon photo diode with PIN structure mounted in a lens, water clear plastic epoxy, and end looking package. The lens effect allows an acceptance angle


    OCR Scan     		PD-37BRC PD-37BRC ---T80 500Lux 400LUX 200Lux- infrared circuit diagram PDF

    PD-34BRC

    Contextual Info: Waitrony Infrared Pin Photo Diode Model No.: PD-34BRC 1. General Description: Dimensions The PD-34BRC consists of a PN junction silicon photo diode with PIN structure mounted in a lens, water clear plastic epoxy, and end looking package. The lens effect allows an acceptance angle


    OCR Scan     		PD-34BRC PD-34BRC 500L/UX 300Lux 200LUX PDF

    PD-34BRD

    Contextual Info: Waitrony Infrared Pin Photo Diode Model No.: PD-34BRD 1. General Description: Dimensions The PD-34BRD consists of a PN junction silicon photo diode with PIN structure mounted in a lens, black plastic epoxy, and end looking package. The lens effect allows an acceptance angle of ±15°


    OCR Scan     		PD-34BRD PD-34BRD 400LUX 200LUX PDF

    2ACE

    Abstract: PD-52BRD infrared circuit diagram
    Contextual Info: Waitrony Infrared Pin Photo Diode Model No.: PD-52BRD 1. General Description: Dimensions The PD-52BRD consists of a PN junction silicon photo diode with PIN structure mounted in a lens, black epoxy, and end looking package. The lens effect allows an acceptance angle of ±25° measured


    OCR Scan     		PD-52BRD PD-52BRD 2ACE infrared circuit diagram PDF

    PD-32BRC

    Abstract: Photo diode circuit diagram cm2215
    Contextual Info: Waitrony Infrared Pin Photo Diode Model No.: PD-32BRC 1. General Description: Dimensions The PD-32BRC consists of a PN junction silicon photo diode with PIN structure mounted in a lens, clear epoxy, and end looking package. The lens effect allows an acceptance angle of ±16° measured


    OCR Scan     		PD-32BRC PD-32BRC -25CC 300Lux 200Lux Photo diode circuit diagram cm2215 PDF

    PD-42BRC

    Contextual Info: Waitrony Infrared Pin Photo Diode Model No.: PD-42BRC 1. General Description: Dimensions The PD-42BRC consists of a PN junction silicon photo diode with PIN structure mounted in a lens, clear epoxy, and side looking package. The lens effect allows an acceptance angle of ±30° measured


    OCR Scan     		PD-42BRC PD-42BRC 2856K. 75R-1 PDF

    PD-32BRD

    Abstract: 1050nm Waitrony
    Contextual Info: Waitrony Infrared Pin Photo Diode Model No.: PD-32BRD 1. General Description: Dimensions The PD-32BRD consists of a PN junction silicon photo diode with PIN structure mounted in a lens, black epoxy, and end looking package. The lens effect allows an acceptance angle of ±16° measured


    OCR Scan     		PD-32BRD PD-32BRD 2856K. 2-PD-32BRD 1050nm Waitrony PDF

    Photo diode circuit diagram

    Abstract: PD-52BRC
    Contextual Info: Waitrony Infrared Pin Photo Diode Model No.: PD-52BRC 1. General Description: Dimensions The PD-52BRC consists of a PN junction silicon photo diode with PIN structure mounted in a lens, clear epoxy, and end looking package. The lens effect allows an acceptance angle of ±25° measured


    OCR Scan     		PD-52BRC PD-52BRC 2856K. 000Lux 400LUX 300LUX 200Lux. Photo diode circuit diagram PDF

    Lo5 SMD

    Abstract: PD-S32M
    Contextual Info: Waitrony Infrared Pin Photo Diode Model No.: PD-S32M 1. General Description: Dimensions The PD-S32M consists of a PN junction silicon photo diode with PIN structure mounted in a black epoxy, SOT-23 SMD package. 1 -3 .0 + 0 .1 5 — 1.9±0.1—[ —-4 o .9 5 f—


    OCR Scan     		PD-S32M OT-23 PD-S32M Lo5 SMD PDF

    PC923 equivalent

    Abstract: ST ZO 103 TRIAC triac zo 109 ma triac ZO 109 st triac ZO 109 PC922 equivalent S202S02 application S216S02 Application note PC851 equivalent TRIAC ZO 103 MA
    Contextual Info: General Description of Optoelectronic Devices 2-1 General Description of Optoelectronic Devices 2-1-1 Infrared Emitting Diode LED * 1-24 , =— (1 ) Operating principle The infrared L E D utilizes the PN junction of gallium arsenide (G aA s) crystals.


    OCR Scan     		S101D01 S102S01 112S01/S116S01 S10211) PC923 equivalent ST ZO 103 TRIAC triac zo 109 ma triac ZO 109 st triac ZO 109 PC922 equivalent S202S02 application S216S02 Application note PC851 equivalent TRIAC ZO 103 MA PDF

    SBJ200-04J

    Contextual Info: SBJ200-04J Ordering number : EN8969 SBJ200-04J Schottky Barrier Diode Twin Type • Cathode Common 40V, 20A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • Small reverse current (IR typ=10µA) due to adoption of MRJ (Multi Refined PN Junction) structure.


    Original     		SBJ200-04J EN8969 SBJ200-04J PDF

    SBJ200-06J

    Contextual Info: SBJ200-06J Ordering number : ENA0193 SBJ200-06J Schottky Barrier Diode Twin Type • Cathode Common 60V, 20A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • Small reverse current (IR typ=10µA) due to adoption of MRJ (Multi Refined PN Junction) structure.


    Original     		SBJ200-06J ENA0193 A0193-3/3 SBJ200-06J PDF

    SBJ100-06J

    Contextual Info: SBJ100-06J Ordering number : ENA0192 SBJ100-06J Schottky Barrier Diode Twin Type • Cathode Common 60V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • Small reverse current (IR typ=5µA) due to adoption of MRJ (Multi Refined PN Junction) structure.


    Original     		SBJ100-06J ENA0192 A0192-3/3 SBJ100-06J PDF

    pn junction diode

    Abstract: p-n junction diode pn junction diode structure
    Contextual Info: Application Note Power-Up Behavior of ProASIC 500K Devices I n tro du ct i on Actel’s ProASIC Flash family offers a number of desirable characteristics during power up. ProASIC family devices remain live at power up, and no configuration device is required due to the nonvolatile structure of Actel FPGAs. In


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    BPW-20R

    Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
    Contextual Info: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200


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    TSAL6200

    Abstract: pn junction diode structure phototransistor K-T TSAL6200 application circuit
    Contextual Info: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80086 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si


    Original     		PDF

    uv phototransistor

    Abstract: 8602 rectifier photodiode ge uv photodiode, GaP TSAL6200 ga09 80086 "photoconductive" 1015
    Contextual Info: VISHAY Vishay Semiconductors Physics and Technology Emitters www.vishay.com 1 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. Structure of the chip is displayed in figure 1. Al p - GaAs : Si n - GaAs : Si 94 8200


    Original     		14-Apr-04 uv phototransistor 8602 rectifier photodiode ge uv photodiode, GaP TSAL6200 ga09 80086 "photoconductive" 1015 PDF

    uv phototransistor

    Abstract: solar cell transistor infrared monocrystalline solar cell telefunken Dielectric Constant Silicon Nitride power density for monocrystalline solar cell External Quantum Efficiency solar 10MW BPW21R short distance measurement ir infrared diode Telefunken Phototransistor
    Contextual Info: Vishay Telefunken Physics and Technology Emitters Materials vt vt 05.00 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 1. p - GaAs : Si Al n - GaAs : Si 94 8200


    Original     		PDF

    BPW21R

    Abstract: emitter "1060 nm" RECTIFIER 8212 near IR photodiodes with daylight filter photodiode application luxmeter osram Phototransistor 7.6 v AXIAL INCANDESCENT equivalent of transistor 80113 Tungsten power density for monocrystalline solar cell
    Contextual Info: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80113 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 62. p - GaAs : Si Al


    Original     		PDF

    pn junction diode structure

    Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
    Contextual Info: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss


    Original     		PDF

    BD9897FS

    Abstract: BD9897 bd9897f dc-ac inverter Controller PWM
    Contextual Info: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit NAME OF PRODUCT DC-AC Inverter Control IC TYPE ＢＤ９８９７ＦＳ FUNCTION ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ 36V High voltage process 1ch control with Full-Bridge Lamp current and voltage sense feed back control


    Original     		BD9897FS R0039A BD9897 bd9897f dc-ac inverter Controller PWM PDF

    DC-AC Power Inverter an

    Contextual Info: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit NAME OF PRODUCT DC-AC Inverter Control IC TYPE ＢＤ９８８８ＦＢＤ９８８８ＦＶ FUNCTION ・2ch control with Push-Pull ・Lamp current and voltage sense feed back control ・Sequencing easily achieved with Soft Start Control


    Original     		BD9888F BD9888FV R0039A DC-AC Power Inverter an PDF