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    PN JUNCTION DIODE APPLICATIONS Search Results

    PN JUNCTION DIODE APPLICATIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ30V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ36V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 36 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ20V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CEZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Visit Toshiba Electronic Devices & Storage Corporation

    PN JUNCTION DIODE APPLICATIONS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BAT41

    Abstract: LL41
    Contextual Info: BAT41 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges


    Original     		BAT41 DO-35 100uA 100OC 200mA 300uS BAT41 LL41 PDF

    BAT46 sod80

    Abstract: BAT46 C 704 diode MINI-MELF DIODE green CATHODE DIODE WITH SOD CASE
    Contextual Info: L L 46 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges.


    Original     		DO-35 BAT46. OD-80) 100uA 300us, 250mA BAT46 sod80 BAT46 C 704 diode MINI-MELF DIODE green CATHODE DIODE WITH SOD CASE PDF

    Contextual Info: BAT41 Small-Signal Diode Schottky Diode Features ‹ For general purpose applications. ‹ This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges


    Original     		BAT41 DO-35 100uA 100OC 200mA 300uS PDF

    Contextual Info: BAT86 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.


    Original     		BAT86 BAS86. DO-35 D-74025 03-Feb-04 PDF

    Contextual Info: BAT86 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.


    Original     		BAT86 BAS86. DO-35 08-Apr-05 PDF

    Contextual Info: BAT86 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.


    Original     		BAT86 BAS86. DO-35 D-74025 05-Apr-04 PDF

    Contextual Info: BAT86 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.


    Original     		BAT86 BAS86. DO-35 D-74025 31-Mar-04 PDF

    Diode BAT41

    Abstract: BAT41 200MA diode SOD-80 IF1001 MINI-MELF DIODE green CATHODE
    Contextual Info: L L 41 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges


    Original     		DO-35 BAT41. OD-80) 100uA/300uS 300us 100OC 200mA Diode BAT41 BAT41 200MA diode SOD-80 IF1001 MINI-MELF DIODE green CATHODE PDF

    bat48 sod-80

    Abstract: BAT48 200MA diode SOD-80 MINI-MELF DIODE green CATHODE
    Contextual Info: L L 48 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.


    Original     		DO-35 BAT48. OD-80) 100uA 300us, 200mA 500mA bat48 sod-80 BAT48 200MA diode SOD-80 MINI-MELF DIODE green CATHODE PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES


    Original     		WBFBP-06C FBAS70TW WBFBP-06C PDF

    Contextual Info: L L 46 Small-Signal Diode Schottky Diode Features ‹ For general purpose applications. ‹ This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges.


    Original     		DO-35 BAT46. OD-80C) 100uA 300us, 250mA PDF

    transistor k43

    Abstract: FBAS40TW marking k43 diode
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES


    Original     		WBFBP-06C FBAS40TW WBFBP-06C transistor k43 FBAS40TW marking k43 diode PDF

    K73 Package

    Abstract: FBAS70TW
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES


    Original     		WBFBP-06C FBAS70TW WBFBP-06C K73 Package FBAS70TW PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES


    Original     		WBFBP-06C FBAS40TW WBFBP-06C PDF

    Contextual Info: BAT41 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive


    Original     		BAT41 AEC-Q101 DO-35 TR/10K 50K/box TAP/10K 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Contextual Info: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.


    Original     		BAS86 DO-35 BAT86. AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08 PDF

    Contextual Info: LL46 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive


    Original     		DO-35 BAT46 OD-123 BAT46W-V AEC-Q101 OD-80 GS18/10K 10K/box GS08/2 2002/95/EC. PDF

    Contextual Info: BAT41 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive


    Original     		BAT41 AEC-Q101 DO-35 TR/10K 50K/box TAP/10K 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Contextual Info: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.


    Original     		BAS86 DO-35 BAT86. AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11 PDF

    Contextual Info: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.


    Original     		BAS86 DO-35 BAT86. AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08 PDF

    BAS86

    Abstract: BAT86 DO-204AH
    Contextual Info: BAT86 Vishay Semiconductors formerly General Semiconductor Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic


    Original     		BAT86 BAS86. DO-204AH DO-35 100mA 13-May-02 BAS86 BAT86 DO-204AH PDF

    MINI-MELF DIODE markings

    Contextual Info: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.


    Original     		BAS86 DO-35 BAT86. AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. MINI-MELF DIODE markings PDF

    BAS85

    Abstract: BAT85
    Contextual Info: BAS85 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. This diode is also available in the DO-35 case with type


    Original     		BAS85 DO-35 BAT85. OD-80) 300us 100mA BAS85 BAT85 PDF

    BAT85

    Contextual Info: BAT85 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges This diode is also available in the MiniMELF case with type


    Original     		BAT85 BAS85. DO-35 300us, 100mA BAT85 PDF