PMV1 Search Results

Contextual Info: Product specification PMV16UN 20 V, 5.8 A N-channel Trench MOSFET Rev. 1 — 4 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

PMV117

Abstract: PMV117EN
Contextual Info: PMV117EN µTrenchMOS enhanced logic level FET Rev. 01 — 26 February 2003 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology Product availability: PMV117EN in SOT23.

tm03

Contextual Info: T H IS COPY IS PROVIDED ON A RESTRICTED B A S IS AND D I MENS 1ONS PANDUIT PART # PREFI X WIRE S IZ E mmz PK -C -M -C -M -L -D PMV1 - P 10 P M V 2-P 1 0 P M V 6-P 1 0 i ,8 i.3 A 21 , 1 1.8 3 21 , 1 1 ,5 -2 ,5 1.8 3 ) * 2 ,5 - 6 ,0 2 7 ,9 1 .1 0 ) 0 ,5 -1 ,5

MOSFET TRANSISTOR SMD MARKING CODE nh

Abstract: PMV160UP
Contextual Info: SO T2 3 PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 1 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

PMV16UN

Abstract: NXP SMD diode MARKING CODE SMD MARKING CODE C4170 58A1
Contextual Info: SO T2 3 PMV16UN 20 V, 5.8 A N-channel Trench MOSFET Rev. 1 — 4 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

A41426

Contextual Info: T H IS COPY IS PROVIDED ON A RESTRICTED B ASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. PANDU 1 T PART NUMBER STUD SIZE PMV1-3FB M3 PMV1-4FB M4 PMV1-5FB M5 PMV1-6FB M6 DI MENS 1ONS A *0.5. 21 , 5 9 .851 23, 11 ( . 91

Contextual Info: PART No. PMV1216GY for more information visit www.hammfg.com Data subject to change without notice Isometric drawing Not to Scale TOP VIEW 1.50 4.00 24.25 ISOMETRIC VIEW SIDE VIEW FRONT VIEW BOTTOM VIEW SIDE VIEW

PMV117EN

Contextual Info: PMV117EN µTrenchMOS enhanced logic level FET Rev. 02 — 7 April 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.

Contextual Info: T H IS COPY IS PROVIDED ON A RESTRICTED B ASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. DI MENS IONS PANDUIT PART # STUD S IZ E PREFI X PK PMV1 - 3RB -C -M -C -M -C -M -C -M PMV1-4RB PMV1 -5RB PMV1 -6RB NOTES M3 M4 M5

A41426

Contextual Info: T H IS COPY IS PROVIDED ON A RESTRICTED B ASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. PANDUIT PART NUMBER PREF IX PMV1-3FB PMV1-4FB PMV1-5FB PMV1-6FB PKG -C -M -C -M -C -M -c -M STUD SIZE M3 M4 M5 M6 A ±0,51 21 ,59

Contextual Info: Product specification PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: Product specification PMV117EN µTrenchMOS enhanced logic level FET Rev. 02 — 7 April 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.

Contextual Info: SO T2 3 PMV130ENEA 40 V, N-channel Trench MOSFET 12 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

MOSFET TRANSISTOR SMD MARKING CODE nh

Contextual Info: Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. STUD SIZE DIMENSIONS PANDUIT PART # B ENGLISH METRIC L .03 [0,8] W .01 [0,3] C in. [mm] .015 [0,4] M W .03 [0,8] H .01 [0,3] PMV1-3FB

PMV117EN215

Abstract: PMV117EN
Contextual Info: PMV117EN µTrenchMOS enhanced logic level FET Rev. 02 — 7 April 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.

SOt23-3 footprint wave soldering

Abstract: MARKING TR SOT23-3 P MOSFET
Contextual Info: PMV185XN 30 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

MOSFET TRANSISTOR SMD MARKING CODE NH

Abstract: PMV160UP smd TRANSISTOR code marking 05 sot23
Contextual Info: SO T2 3 PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: Metric Ring Terminals — Nylon, Vinyl and Non-Insulated Electrical Group Part Number System for PAN-TERM Metric Terminals PMV1-3RB-C Type Insulation N = Nylon PM = PAN-TERM Metric NF = Nylon Funnel V = Vinyl Wire Range Stud Size 1 = 0.5-1.0mm2 2 = 1.5-2.5mm2

Contextual Info: SO T2 3 PMV130ENEA 40 V, N-channel Trench MOSFET 13 March 2014 Preliminary data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. PART NUMBER STUD SIZE WIRE RANGE mmz AWG PMVI-3RB-3K M3 PMV1-35RB-3K M3.E PMVI-4RB-3K M4 PMVI-5RB-3K M5 0,5-1,0 (22-18) 0,5-1,0 (22-18)

Contextual Info: THIS COPY IS P R O V I D E D ON A RE ST R I C T E D BASIS AND IS N O T DIMENSIONS PANDUIT PART # STUD SIZE A PREFIX PMV1-3RB M3 PMV1-4RB M4 PMVI-5RB M5 PMV1-6RB M6 TO BE USED IN A N Y WAY DETRIMENTAL TO T H E INTERESTS OF PA ND UI T CORP. mm ±0,51 w ±0S25 £±0 s38 M ±° j5 i l_l±0 ,25

Contextual Info: R induit Electrical Group Part Number System for PAN-TERM Metric Terminals PMV1 -3RB-C — Type TTI2 i-r Insulation PM = N = Nylon Pa n -T e r m Metric n f = Nylon Funnel V = Vinyl Wire Range Stud Size 3 4 5 6 8 1 = 0 .5 -1 .0mm2 2 = 1.5-2.5mm2