PMBF Search Results
PMBF Price and Stock
Nexperia PMBF170,235MOSFET N-CH 60V 300MA TO236AB |
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PMBF170,235 | Cut Tape | 71,173 | 1 |
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PMBF170,235 | 26,448 |
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PMBF170,235 | 30,000 | 30,000 |
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PMBF170,235 | 30,000 | 8 Weeks | 30,000 |
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PMBF170,235 | Reel | 20,000 |
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PMBF170,235 | 30,000 | 10 Weeks | 10,000 |
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PMBF170,235 | 10 Weeks | 10,000 |
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Switchcraft Conxall VMPMBFADAPTER, MICRO BNC TO MIDSIZE WE |
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VMPMBF | Bulk | 20 | 1 |
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VMPMBF | 10 |
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VMPMBF | Bulk | 10 |
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VMPMBF | Bulk | 17 Weeks | 10 |
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VMPMBF | 2 |
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VMPMBF | 10 |
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Switchcraft Conxall VMMPMBFADAPTER, MICRO BNC TO MICRO WECO |
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VMMPMBF | Bulk | 20 | 1 |
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VMMPMBF | 9 |
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VMMPMBF | Bulk | 10 |
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VMMPMBF | Bulk | 17 Weeks | 10 |
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VMMPMBF | Bulk | 10 | 1 |
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VMMPMBF | 2 |
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VMMPMBF | 10 |
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NXP Semiconductors PMBFJ176,215JFET P-CH 30V SOT23 |
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PMBFJ176,215 | Reel |
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PMBFJ176,215 | 3,000 |
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PMBFJ176,215 | 3,000 |
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NXP Semiconductors PMBFJ111,215JFET N-CH 40V SOT23 |
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PMBFJ111,215 | Reel |
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PMBFJ111,215 | 54 Weeks | 3,000 |
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PMBFJ111,215 | 1,172 |
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PMBF Datasheets (174)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMBF107 |
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N-channel enhancement mode vertical D-MOS transistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMBF107 |
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N-channel enhancement mode vertical D-MOS transistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMBF107 |
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N-channel enhancement mode vertical D-MOS transistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMBF107 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMBF107T/R | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMBF170 |
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N-channel enhancement mode vertical D-MOS transistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMBF170 |
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N-channel enhancement mode field-effect transistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMBF170 |
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N-channel enhancement mode vertical D-MOS transistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMBF170 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMBF170-03 |
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N-channel enhancement mode field-effect transistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMBF170,215 |
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N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 5000@10V5300@4.5V mOhm; VDSmax: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMBF170,235 |
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N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 5000@10V5300@4.5V mOhm; VDSmax: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMBF170/DG,215 |
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PMBF170/DG - N-channel TrenchMOS intermediate level FET, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMBF170T/R |
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N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 5000@10V5300@4.5V mOhm; VDSmax: 60 V | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMBF170TR |
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N-channel enhancement mode field-effect transistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMBF170T/R | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMBF4391 |
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PMBF4391 - N-channel FETs - CRS: 3.5 pF; IDSS: 50 to 150 mA; IDSS max.: 150 mA; IDSS min.: 50 mA; IG: 50 mA; RDS(on): 30 Ohm; toff: 20 ns; ton: 15 ns; -V(P)GS: 4 to 10 V; V(P)GS: 4 V; V(P)GS: 10 V; VDSmax: 40 V | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMBF4391 |
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N-channel FETs | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMBF4391 |
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N-Channel FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMBF4391 | Unknown | Semiconductor Master Cross Reference Guide | Scan |
PMBF Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MBB691
Abstract: MBB076 MAR 745 TRANSISTOR MBB692 MSB003 PMBF107
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M3D088 PMBF107 SC13b SCA54 135108/00/03/pp8 MBB691 MBB076 MAR 745 TRANSISTOR MBB692 MSB003 PMBF107 | |
13006 TRANSISTOR
Abstract: transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D
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PMBFJ620 OT363 MSC895 13006 TRANSISTOR transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D | |
Contextual Info: PMBFJ110 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25.0 V(BR)GSS (V)25.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)3.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V).5 |
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PMBFJ110 | |
Contextual Info: PMBFJ310 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25.0 V(BR)GSS (V)25.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V)2.0 |
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PMBFJ310 | |
Contextual Info: PMBFJ176 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30.0 V(BR)GSS (V)30.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)20.0 V(GS)off Min. (V)1.0 |
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PMBFJ176 | |
Contextual Info: PMBFJ111 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)40.0 V(BR)GSS (V)40.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V)3.0 |
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PMBFJ111 | |
philips ET-E 60Contextual Info: Philips Semiconductors • bbSBTBl D02HQ41 OTB HIAPX AMER PH IL IPS /DISCRETE N-channel field-effect transistors PMBF5484; PMBF5485; PMBF5486 QUICK REFERENCE DATA FEATURES MIN. MAX. UNIT - 25 V PMBF5484 1 5 mA PMBF5485 4 10 mA • Low noise SYMBOL • Interchangeability of drain and |
OCR Scan |
D02HQ41 PMBF5484; PMBF5485; PMBF5486 PMBF5484 PMBF5485 -SOT23 philips ET-E 60 | |
PMBFJ174Contextual Info: bb Sim i 002405b 524 H A P X N APIER P H IL IP S/ D IS CR ET E b?E I> PMBFJ174 to 177 _ J V _ P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in plastic microminiature SOT-23 envelopes. They are intended for application with analogue switches, choppers, commutators etc. using SMD |
OCR Scan |
002405b PMBFJ174 OT-23 PMBFJ174 RMBFJ174 | |
pmbfj174
Abstract: PMBFJ174 to 177 SMD 4B0
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OCR Scan |
PMBFJ174 OT-23 PMBFJ174 7Z94962 PMBFJ174 to 177 SMD 4B0 | |
PMBFJ620,115Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken |
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PMBFJ620 OT363 PMBFJ620,115 | |
pmbfj310Contextual Info: 3 SO T2 PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION |
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PMBFJ308; PMBFJ309; PMBFJ310 PMBFJ308 pmbfj310 | |
SNW-EQ-608
Abstract: transistor d 1862
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OCR Scan |
SNW-EQ-608, SNW-FQ-302A SNW-FQ-302B. PMBF107 DA763 SNW-EQ-608 transistor d 1862 | |
PMBFJ108
Abstract: MAM385 PMBFJ109 PMBFJ110
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PMBFJ108; PMBFJ109; PMBFJ110 PMBFJ108) MAM385 PMBFJ108 MAM385 PMBFJ109 PMBFJ110 | |
pmbfj174
Abstract: marking p6s P6S SMD
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PMBFJ174 MAM386 marking p6s P6S SMD | |
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Contextual Info: PMBFJ108 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25.0 V(BR)GSS (V)25.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)3.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V)3.0 |
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PMBFJ108 | |
Contextual Info: PMBFJ113 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)40.0 V(BR)GSS (V)40.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V).5 |
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PMBFJ113 | |
Contextual Info: PMBFJ109 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25.0 V(BR)GSS (V)25.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)3.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V)2.0 |
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PMBFJ109 | |
MRC172
Abstract: PMBF5484 marking code 10 sot23 PMBF5485 PMBF5486 MRC165 MRC171
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PMBF5484; PMBF5485; PMBF5486 MAM385 MRC172 PMBF5484 marking code 10 sot23 PMBF5485 PMBF5486 MRC165 MRC171 | |
Contextual Info: P h ilip s C o m p o n e n t s Data sheet status Product specification date of issue November 1990 PMBF107 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA FEATURES SYM BOL PARAM ETER • Direct interface to C-M O S, TTL, |
OCR Scan |
PMBF107 VCB711 003b2G5 BF107 | |
field-effect transistor
Abstract: MRC160 pmbf4416a TRANSISTOR D 471
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OCR Scan |
PMBF4416; PMBF4416A MAM385 F4416A PMBF4416 PMBF4416A cPMBF4416A MRC166 field-effect transistor MRC160 TRANSISTOR D 471 | |
PMBFJ174Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel |
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PMBFJ174 MAM386 R77/02/8 | |
PMBF4416
Abstract: PMBF4416A
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OCR Scan |
bb53q31 PMBF4416; PMBF4416A PMBF4416 DD240MD PMBF4416 PMBF4416A | |
TRANSISTOR SMD MARKING CODE pKX
Abstract: TRANSISTOR SMD MARKING CODE DM smd code pKX TRANSISTOR SMD MARKING CODE ld smd transistor marking BL SMD TRANSISTOR MARKING code DD SMD CODE TRANSISTOR JA PMBF170 TRANSISTOR SMD MARKING CODE 2A SMD SOT23 transistor PMBF170
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OCR Scan |
PMBF170 200rnA bbS3T31 TRANSISTOR SMD MARKING CODE pKX TRANSISTOR SMD MARKING CODE DM smd code pKX TRANSISTOR SMD MARKING CODE ld smd transistor marking BL SMD TRANSISTOR MARKING code DD SMD CODE TRANSISTOR JA PMBF170 TRANSISTOR SMD MARKING CODE 2A SMD SOT23 transistor PMBF170 | |
TRANSISTOR code marking 2FI sot23
Abstract: PMBF107 UCB710 U34 marking 11 sot23
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OCR Scan |
PMBF107 003b20S TRANSISTOR code marking 2FI sot23 PMBF107 UCB710 U34 marking 11 sot23 |