Untitled
Abstract: No abstract text available
Text: PM6/PM8/PM0 Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data Avalanche capability High thermal shock resistance Glass passivated for hermetic sealing Low reverse leakage currents Low forward voltage drop
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369mg
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Untitled
Abstract: No abstract text available
Text: RECTIFIER, up to 1kV, 2A, 2.5|JS January 29, 1998 QUICK REFERENCE DATA = 600- 1000V If = 2.0A trr = 2.5pS V Ir r = 1.0m A PM6 PM8 PMO TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED STANDARD RECOVERY RECTIFIER DIODE
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OCR Scan
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TEL805-498-2111
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PDF
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G957
Abstract: GR-468-CORE OAT6223S-OLT-V2-10
Text: OKI 600M FSAN OLT Transceiver Specifications 1/ Document Number: PM1-1001-008-1 600M FSAN OLT Transceiver Specifications Document Number Revision DATE: Author Project Manager PM6-1001-008 DRAFT 0.5 May, 02, 2001 O. Kikuchi K. YUSA Part Number : OAT6223S-OLT-V2-10 / ES Board
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PM1-1001-008-1
PM6-1001-008
OAT6223S-OLT-V2-10
MIL-STD-883
GR-468-CORE.
G957
GR-468-CORE
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PDF
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Untitled
Abstract: No abstract text available
Text: PM6/PM8/PM0 Axial Leaded Hermetically Sealed Standart Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data VR = 600V - 1000V IF = 2.0A trr = 3µS IR = 1.0µA Avalanche capability High thermal shock resistance Glass passivated for hermetic sealing
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Original
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369mg
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PDF
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Untitled
Abstract: No abstract text available
Text: PM6/PM8/PM0 Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data VR = 600V - 1000V IF = 2.0A trr = 3µS IR = 1.0µA Avalanche capability High thermal shock resistance Glass passivated for hermetic sealing
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Original
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369mg
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PDF
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STK600
Abstract: FSI-150 Atmel STK600 499 P44 20 PJ7D BLM21AG102SN1D N-7075 NC7SZ57P6X NC7SZ58P6X
Text: 5 4 3 GND PF0 PF2 PF4 PF6 GND PG0 PG2 PG4 PG6 GND PH0 PH2 PH4 PH6 PB1 B PB3 GND XTAL1 XTAL2 GND TOSC1 TOSC2 RESET GND 1 2 3 6 5 4 6 5 4 PB2 C1 100n 499-P44-20 BLM21AG102SN1D GND PL0 PL2 PL4 PL6 GND GND VTG PD1 PD3 PD5 PD7 GND PM0 PM2 PM4 PM6 VTG PE1 PE3 PE5
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499-P44-20
BLM21AG102SN1D
NC7SZ57P6X
STK600-ATtiny10
STK600-ATtiny10
STK600
FSI-150
Atmel STK600
499 P44 20
PJ7D
BLM21AG102SN1D
N-7075
NC7SZ57P6X
NC7SZ58P6X
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PDF
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Untitled
Abstract: No abstract text available
Text: P8TG-xxxxE/Z2:1 H35 LF PM6-SERIES Rev.09-2009 1.5 Watt 2:1 Wide Input Regulated DIP24 Plastic Case 1.5 or 3.5 KV DC I/O Isolation SINGLE and DUAL Output Continuous Short Circuit Prot. Mainzer Straße 151–153 D-55299 Nackenheim Tel. +49 6135 7026-0 Fax: +49 6135 931070
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Original
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DIP24
D-55299
1500VDC
3500VDC
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PDF
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Untitled
Abstract: No abstract text available
Text: P8TG-xxxxE/Z2:1 H35 MLF PM6-SERIES Rev.09-2009 1.5 Watt 2:1 Wide Input Regulated DIP24 Metal Case 1.5 or 3.5 KV DC I/O Isolation SINGLE and DUAL Output Continuous Short Circuit Prot. Mainzer Straße 151–153 D-55299 Nackenheim Tel. +49 6135 7026-0 Fax: +49 6135 931070
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DIP24
D-55299
1500VDC
3500VDC
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PDF
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P10TG-243R3E2
Abstract: No abstract text available
Text: P10TG-xxxxE/Z2:1 H35 MLF PM6-SERIES Rev.09-2009 2 Watt 2:1 Wide Input Regulated DIP24 Metal Case 1.5 or 3.5 KV DC I/O Isolation SINGLE and DUAL Output Continuous Short Circuit Prot. Mainzer Straße 151–153 D-55299 Nackenheim Tel. +49 6135 7026-0 Fax: +49 6135 931070
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Original
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P10TG-xxxxE/Z2
DIP24
D-55299
1500VDC
3500VDC
P10TG-243R3E2
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PDF
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P10TG-243R3E2
Abstract: No abstract text available
Text: P10TG-xxxxE/Z2:1 H35 LF PM6-SERIES Rev.09-2009 2 Watt 2:1 Wide Input Regulated DIP24 Plastic Case 1.5 or 3.5 KV DC I/O Isolation SINGLE and DUAL Output Continuous Short Circuit Prot. Mainzer Straße 151–153 D-55299 Nackenheim Tel. +49 6135 7026-0 Fax: +49 6135 931070
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Original
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P10TG-xxxxE/Z2
DIP24
D-55299
1500VDC
3500VDC
P10TG-243R3E2
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PDF
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Untitled
Abstract: No abstract text available
Text: P14TG-xxxxE/Z2:1 H35 LF PM6-SERIES Rev.09-2009 3 Watt 2:1 Wide Input Regulated DIP24 Plastic Case 1.5 or 3.5 KV DC I/O Isolation SINGLE and DUAL Output Continuous Short Circuit Prot. Mainzer Straße 151–153 D-55299 Nackenheim Tel. +49 6135 7026-0 Fax: +49 6135 931070
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Original
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P14TG-xxxxE/Z2
DIP24
D-55299
1500VDC
3500VDC
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PDF
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Untitled
Abstract: No abstract text available
Text: P14TG-xxxxE/Z2:1 H35 MLF PM6-SERIES Rev.09-2009 3 Watt 2:1 Wide Input Regulated DIP24 Metal Case 1.5 or 3.5 KV DC I/O Isolation SINGLE and DUAL Output Continuous Short Circuit Prot. Mainzer Straße 151–153 D-55299 Nackenheim Tel. +49 6135 7026-0 Fax: +49 6135 931070
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Original
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P14TG-xxxxE/Z2
DIP24
D-55299
1500VDC
3500VDC
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PDF
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Untitled
Abstract: No abstract text available
Text: R E ^ T I F I E R ’ u p to TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com January 29, 1998 QUICK REFERENCE DATA V r = 6 0 0 - 1000V If = 2 .0 A trr = 2 .5 p S Ir = 1.0m A PM6 PM8 PMO 1 k V ’ 2 A ’ 2 - 5 ii s AXIAL LEADED HERMETICALLY SEALED
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TEL805-498-2111
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PDF
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Untitled
Abstract: No abstract text available
Text: T H IS COPY IS PROVIDED ON A RESTRICTED B ASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. DI MENS IONS P A N D U 1T PART # WIRE SIZE PREFI X PK PM 1 -P10 -c -M PM2-P10 -C PM6-P10 -L -M -D mm* t0.5 A t0,3 mm ±0,4 B DIA.
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PM2-P10
PM6-P10
A41445
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PDF
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diode 36b3
Abstract: micron sram MS-026
Text: OBSOLETE ADVANCE 128K x 18, 64K x 32/36 3.3V I/O, FLOW-THROUGH SYNCBURST SRAM MT58LC128K18B3, MT58LC64K32B3, MT58LC64K36B3 SYNCBURST SRAM 3.3V Supply, Flow-Through and Burst Counter FEATURES • • • • • • • • • • • • • • • Fast access times: 8.5ns, 9ns, 10ns and 11ns
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MT58LC128K18B3,
MT58LC64K32B3,
MT58LC64K36B3
diode 36b3
micron sram
MS-026
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PDF
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Untitled
Abstract: No abstract text available
Text: M I ir S n M MT58LC32K32/36B3 32K X 32/36 SYNCBURST SRAM SYNCHRONOUS SRAM 32K x 32/36 SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 8 .5 ,9 ,1 0 and 11ns
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MT58LC32K32/36B3
100-PIN
MT50LC32K32/36B3
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 1, 2 MEG x 32 DRAM DIMMs DRAM MODULE MT2LD132U X MT4LD232U(X) FEATURES • JEDEC pinout in a 100-pin, dual in-line memory module (DIMM) • 4MB (1 Meg x 32) and 8MB (2 Meg x 32) • State-of-the-art, high-performance CMOS silicon-gate process
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100-pin,
024-cycle
MT2LD132U
MT4LD232U
100-Pin
MT4LD232UG)
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PDF
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Oscilloquartz
Abstract: OCXO8673 Crystal 8.672 OSCILLOQUARTZ S.A OCXO 406 oscilloquartz 4.096
Text: SC-cut Product Description The modular design offers the flexibility to accomodate 3rd overtone crystal resonator to enhance long term stability few parts in 10-10 per day and features a sine or TTL-compatible output. Furthermore, industry standard footprint
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Original
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1E-10/day
CH-2002
\XO\SPECOSA\DATA\OCXO8673
Oscilloquartz
OCXO8673
Crystal 8.672
OSCILLOQUARTZ S.A
OCXO 406
oscilloquartz 4.096
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PDF
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Untitled
Abstract: No abstract text available
Text: PD -9.1649 International IQR Rectifier IRF7526D1 PRELIMINARY FETKY M O S F E T and Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • P-Channel HEXFET • Low Vp Schottky Rectifier • Generation V Technology • Micro8 Footprint
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OCR Scan
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IRF7526D1
Rf7526d1
S545E
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PDF
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MT8LSDT264HG-662C1
Abstract: MT8LSDT264HG-662 SO-DIMM 144-pin
Text: OBSOLETE 2 MEG x 64 SDRAM SODIMM MT8LSDT264H SMALL-OUTLINE SDRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View • JEDEC-standard 144-pin, small-outline, dual in-line
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Original
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MT8LSDT264H
144-pin,
MT8LSDT264HG-662C1
MT8LSDT264HG-662
SO-DIMM 144-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-9.1647 International IQR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a o r- ID K ur * - - 3 g an
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IRF7523D1
Rf7523d1
0D2B023
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PDF
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MT28F016S3VG-9
Abstract: TRS090 A4 marking Quantum Devices
Text: OBSOLETE ADVANCE 2 MEG x 8 EVEN-SECTORED FLASH MEMORY MT28F016S3 FLASH MEMORY 3V Only, Dual Supply FEATURES • • • • • • • • Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: 10µA MAX 3V-only, dual-supply operation:
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Original
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MT28F016S3
110ns
40-Pin
110ns
40-lead
MT28F016S3VG-9
TRS090
A4 marking
Quantum Devices
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PDF
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ir*526
Abstract: smd diode schottky code marking 2F
Text: P D - 9.1649 International IGR Rectifier IRF7526D1 PRELIMINARY FETKY • Co-packaged HEXFET Power MOSFET and Schottky Diode • P-Channel HEXFET • Low Vp Schottky Rectifier • Generation V Technology • Micro8 Footprint Description MOSFET and Schottky Diode
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OCR Scan
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IRF7526D1
Rf7526d1
ir*526
smd diode schottky code marking 2F
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PDF
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DIODE F7 SMD
Abstract: smd diode schottky code marking 2F Diode smd code sm
Text: P D -9 .1 6 4 8 International IQR Rectifier IRF7524D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low Vp Schottky Rectifier Generation V Technology Micro8 Footprint VDSS = -20V RDS on = 0 .2 7 Q
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OCR Scan
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IRF7524D1
Rf7524d1
DIODE F7 SMD
smd diode schottky code marking 2F
Diode smd code sm
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PDF
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