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    B24N10

    Abstract: YMB 06
    Text: PJB24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch


    Original     		PDF PJB24N10 2002/95/EC O-263 MIL-STD-750 B24N10 O-263 800PCS/REEL 2010-REV B24N10 YMB 06

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    Abstract: No abstract text available
    Text: PJB24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch


    Original     		PDF PJB24N10 2002/95/EC O-263 MIL-STD-750 B24N10 O-263 800PCS/REEL 983A5F 2010-REV