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    PJA55P03 Price and Stock

    PanJit Group PJA55P03_R2_00001

    MOSFET DIS.4.3A 30V P-CH SOT23 SMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik PJA55P03_R2_00001
    • 1 -
    • 10 $0.12374
    • 100 $0.12374
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    PanJit Group PJA55P03_R1_00001

    MOSFET DIS.4.3A 30V P-CH SOT23 SMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik PJA55P03_R1_00001
    • 1 -
    • 10 $0.12374
    • 100 $0.12374
    • 1000 $0.12374
    • 10000 $0.1076
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    PJA55P03 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PJA55P03 30V P-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 4.3 Amperes • RDS ON , VGS@-10V,ID@-4.3A < 48 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance 0.008(0.20) 0.111(2.82) 0.024(0.6) 0.119(3.02)


    Original
    PJA55P03 2002/95/EC IEC61249 OT-23-1 MIL-STD-750 0084grams 2011-REV PDF

    marking CODE GA

    Abstract: No abstract text available
    Text: PJA55P03 30V P-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 4.3 Amperes • RDS ON , VGS@-10V,ID@-4.3A < 48 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance 0.008(0.20) 0.111(2.82) 0.024(0.6) 0.119(3.02)


    Original
    PJA55P03 2002/95/EC IEC61249 OT-23-1 2011-REV RB500V-40 marking CODE GA PDF

    Untitled

    Abstract: No abstract text available
    Text: PJA55P03 30V P-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 4.3 Amperes • RDS ON , VGS@-10V,ID@-4.3A < 48 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance 0.008(0.20) 0.111(2.82) 0.024(0.6) 0.119(3.02)


    Original
    PJA55P03 2002/95/EC IEC61249 OT-23-1 MIL-STD-750 0084grams 2011-REV RB500V-40 PJA55P03 PDF

    Untitled

    Abstract: No abstract text available
    Text: PJA55P03 30V P-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 4.3 Amperes • RDS ON , VGS@-10V,ID@-4.3A < 48 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance 0.008(0.20) 0.111(2.82) 0.024(0.6) 0.119(3.02)


    Original
    PJA55P03 2002/95/EC IEC61249 OT-23-1 2011-REV PDF