PJ TRANSISTOR Search Results

553B

Abstract: IRFF9220 JANTX2N6847 JANTXV2N6847 diode ior 0014
Contextual Info: |0 p pj p| I IOR Rectifier I pj Provisional Data Sheet No. PD-9.553B I" I q JANTX2N6847 HEXFET POWER MOSFET JANTXV2N6847 [REF:MIL-PRF-19500/563] [GENERIC :IRFF9220] P -C H A N N E L -200 Volt, 1.5Q HEXFET Product Summanf HEXFET technology is the key to International

2EDL23N06

Abstract: trimble R8
Contextual Info: Eice DR IV ER High voltage gate driver IC BDTIC E valu atio n B oar d Application Note EV AL -2 E DL2 3N 06 PJ EV AL -2 E DL2 3N 06 PJ Applic atio n N ote Rev. 1.0 2014-04-11 Infin eon T echnol ogi es A G www.BDTIC.com/infineon BDTIC Edition 2014-04-11

Contextual Info: Supertexinc. HV441 P relim inary High-Voltage Ring Generator Ordering Information Operating Voltage Package Options Vv PP1 - Vv NN1 44-Pin PLCC 220V HV441 PJ General Description Features □ 220V maximum operating voltage □ Integrated high voltage transistors

Contextual Info: Preliminary_ R F 2 1 2 8 PJ MICRO-DEVICES MEDIUM POWER LINEAR AM PLIFIER Typical Applications • PCS Communication Systems Commercial and Consumer Systems • 2.5GHz ISM Band Applications Portable Battery Powered Equipment • Wireless LANs

Transistor PJ 431

Contextual Info: HA16103 PJ/FPJ Watchdog Timer Description The HA16103PJ/FPJ monolithic voltage control is designed for microcomputer systems. In addition to voltage regulator, it includes watch dog timer function, power on reset function, and output voltage monitor function.

Transistor PJ 431

Contextual Info: HA16103 PJ/FPJ Watchdog Timer Description The HA16103PJ/FPJ monolithic voltage control is designed for microcomputer systems. In addition to voltage regulator, it includes watch dog timer function, power on reset function, and output voltage monitor function.

Transistor PJ 431

Abstract: PJ 431 TRANSISTOR PJ H8/532 h a 431 transistor 2SB857D HA16103 HA16103FPJ HA16103PJ PJ TRANSISTOR
Contextual Info: HA16103 PJ/FPJ Watchdog Timer Description The HA16103PJ/FPJ monolithic voltage control is designed for microcomputer systems. In addition to voltage regulator, it includes watch dog timer function, power on reset function, and output voltage monitor function.

B52 transistor

Contextual Info: Thal mLUM HEWLETT PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features This device is designed for use in low noise, wideband amplifier, • High Output Power: mixer and oscillator applications 21.0 dBm Typical Pj iB at 2.0 GHz

transistor 86 y 87

Abstract: eic 57 210 17bs2 AT-42000 AT-42000-GP4 pj 68 S2a
Contextual Info: « Thai minM HP AECWKLAERTDT Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features This device is designed for use in low noise, wideband amplifier, • High O utput Power: 21.0 dBm Typical Pj dB at 2.0 GHz m ixer and oscillator applications

pj 929 diode

Abstract: 2SJ214 sawtooth wave generator through transformer buck-boost chopper 28 pin ic TM 1628 npn vdb 1S2076A pj 83 diode chopper transformer winding HA16666
Contextual Info: HA16114P/PJ/FP/FPJ, HA16120FP/FPJ Switching Regulator for Chopper Type DC/DC Converter REJ03F0055-0200Z Previous: ADE-204-020A Rev.2.0 Sep.18.2003 Description The HA16114P/FP/FPJ and HA16120FP/FPJ are single-channel PWM switching regulator controller ICs

2SC2003

Abstract: I3002 2SC2003 transistor transistor 2sC2003
Contextual Info: NPN SILICON TRANSISTOR 2SC2003 D E S C R IP TIO N The 2SC2003 is designed for use in driver stage of high voltage audio equipments. FEATURES • High total power dissipation. Pj : 600 mW • High hp£ and high voltage. hpE l c = 50 mA : 200 TYP. V CEO = 80 V

N12015

Abstract: 5672 2N5671 2N5672
Contextual Info: MANUFACTURING 2N5671 2N 5672 NPN SILICON pj-ANAR MULTI EPITAXIAL POWER TRANSISTORS HIG H CURRENT! FAST SW ITC H IN G APPLICATIONS 140 waJtts at 2 ^ C 30A rated collector current 0 .5 /¿s fall tim e TO —3 O U TLIN E D IM E N S IO N S mm 1.7 max. 22.86

Contextual Info: W hat HEWLETT« mLMÆ PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical Pj dB at 2.0 GHz 20.5 dBm Typical Pi ¿b at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical Gi ^ at 2.0 GHz

pj 69 diode

Abstract: pj 54 diode pj 83 diode CODE PJ TRANSISTOR PJ pwm circuits 1990 pj 5d diode 1S2076A 240 AC to 12V dc transformer HRP24
Contextual Info: HA16114P/PJ/FP/FPJ, HA16120FP/FPJ Switching Regulator for Chopper Type DC/DC Converter Description The HA16114P/FP/FPJ and HA16120FP/FPJ are single-channel PWM switching regulator controller ICs suitable for chopper-type DC/DC converters. Integrated totem-pole output circuits enable these ICs to

F2683

Contextual Info: That HEWLETT mi/LMPACKARD 2-16 GHz General Purpose Gallium Arsenide FET Technical Data A TF-26836 F e a tu r e s D escrip tio n • High Output Power: 18.0 dBm Typical Pj dB at 12 GHz The ATF-26836 is a high perfor­ mance gallium arsenide Schottkybarrier-gate field effect transistor

AMD geode

Abstract: amd geode motherboard
Contextual Info: AMD0040 32884a_nxfamily_pb.qxd 9/3/04 3:57 PM Page 1 AMD Geode NX Processor Family THE INTEGER GROUP 1999 Bryan Street, Suite 1700 Dallas, Tx 75201 214 758-6800 Fax (214)758-6904 Date: 09/02/04 Job#: AMD0040 PJ Name: NX1250@6W Product Brief Versatile, Low-Power

Contextual Info: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ Pj{jg Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted

pj 82 diode

Abstract: pj 906 diode pj 906 pj 48 diode diode pj 33 Phototransistor bp 101 DIODE PJ 2450 pj 17 diode ha17385 0/pj 906 diode
Contextual Info: HA17431VPJ/PJ/PAJ/FPJ/FPAJ/PNAJ/UPA, HA17432UPA Shunt Regulator REJ03D0892-0100 Rev.1.00 Apr 03, 2007 Description The HA17431 series is temperature-compensated variable shunt regulators. The main application of these products is in voltage regulators that provide a variable output voltage. The on-chip high-precision reference voltage source can

2SC2103

Abstract: TRANSISTOR 2SC2103 TRANSISTOR 2SC RFC-M transistor power rating 5w
Contextual Info: 'J 3 5> y tiP U T £ *ì> ? l 7 2S c 2 { ; - t B ^ y = J Z y .ICON NPN EPITAXIAL PLANAR TRANSISTOR HI 1 * ffl O VHF Band Power A m plifier Applications INDUSTRIAL APPLICATIONS • * i i c B .n tim m K t k A 'c -i- o P 0 = 24W Min ) ( f = 175MHz, V CC = 12.5X Pj = XW )

28 pin ic TM 1628

Abstract: pj 83 diode chopper transformer winding pj 54 diode TM 1628 IC SOP HA16666 pj 89 diode pj 5d diode Nippon capacitors HRP24
Contextual Info: HA16114P/PJ/FP/FPJ, HA16120FP/FPJ Switching Regulator for Chopper Type DC/DC Converter ADE-204-020A Z Rev. 1 Dec. 2000 Description The HA16114P/FP/FPJ and HA16120FP/FPJ are single-channel PWM switching regulator controller ICs suitable for chopper-type DC/DC converters. Integrated totem-pole output circuits enable these ICs to

cny57a

Abstract: CNY57 CNY57AU 4N25 PHILIPS "sot-90B" CNY57U Philips 4N26 sot90b sot-90B 80T-90B
Contextual Info: N AMER PHILIPS/DISCRETE 5SE D • ^53=131 Gült^S1! 1 ■ 'P'+l-Pj 76 Optoelectronic Devices OPTOCOUPLERS PACKAGE OUTLINE TYPE CURRENTTRANSFER RATIO CTR % AT If Vce MIN mA VOLTS V|ORW d.c. VOLTS v C e (s a t) MAX ATff VOLTS mA fc AT mA / i* ton^off TYPICAL

transistor atf

Contextual Info: What H E W L E T T * mLliM PACKARD 2 -1 8 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 Features • Low N oise Figure: 1.1 dB Typical at 12 GHz • High A ssociated Gain: 9.5 dB Typical at 12 GHz • High Output Power: 17.5 dBm Typical Pj ¿b at 12 GHz

2SC2407

Abstract: PA33 SC-43A
Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE D E S C R IP T IO N FEATU RES 2SC2407 The 2SC2407 is designed for U H F and V H F amplifier. Pout: 160 m W TYP. @ f= 5 0 0 M H z , V CC= 1 2 .6 V Pj=5 mW Class B ABSO LU TE M A X IM U M R A T IN G S Maximum Temperatures

Contextual Info: WhatHEWLETT mL'EM P A C K A R D 2 - 1 0 GHz Medium Pow er Gallium Arsenide FE T Technical Data ATF-46101 Features • High Output Power: 27.0 dBm Typical Pj dB at 4 GHz • High Gain a t 1 dB Compression: 12.0 dB Typical Gj ^ at 4 GHz • High Power Efficiency: