PINOUT DIAGRAM FOR AM2 Search Results

29LV160

Abstract: Am29LV800 28F160 28F160B3 28F640B3 AP-657 INTEL application notes Intel AP Am29LV0641D 38000-3FFFF
Contextual Info: AP-680 AP-680 APPLICATION NOTE Multi-Source Solution for Intel 28Fxx0B3 Advanced Boot Block and AMD* AM29LVxxxx October 2001 NOTE: This document formerly known as Multi-Source Solution for Intel® 28F160B3 Advanced Boot Block and AMD 29LV160. Order Number: 297876-004

29LV160

Abstract: 28F160 28F160B3 28F640B3 AP-657 intel 28f160 Advanced Boot Block Flash 28FxxxB 29lv160 Flash
Contextual Info: AP-680 AP-680 APPLICATION NOTE Multi-Source Solution for Intel 28Fxx0B3 Advanced Boot Block and AMD* AM29LVxxxx October 2001 NOTE: This document formerly known as Multi-Source Solution for Intel® 28F160B3 Advanced Boot Block and AMD 29LV160. Order Number: 297876-005

Contextual Info: A D V A N C E IN F O R M A T IO N AMDZ1 Am29F160D 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 5.0 Volt-only, Boot or Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt single power supply operation — Minimizes system-level power requirements

AM27C49T

Contextual Info: a Am27C49 65,536-Bit 8192x8 High-Performance CMOS PROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS High-speed (35 ns)/Low-Power (90 mA) CMOS EPROM Technology Direct plug-ln replacement for Bipolar PROMs — JEDEC-approved pinout 5-Volt ±10% power supplies for both Commer­

Amd 27C49

Contextual Info: Am27C49 65,536-Bit 8192x8 High-Performance CMOS PROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS High-speed (35 ns)/Low-Power (90 mA) CMOS EPROM Technology Direct plug-in replacement for Bipolar PROMs JEDEC-approved pinout S-Volt ±10% power supplies for both Commer­

Contextual Info: ADVANCE INFORMATION Am29LV256M 64 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 2.7–3.6 volt read, erase, and program operations

Contextual Info: ADVANCE INFORMATION Am29F160D 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 5.0 Volt-only, Boot or Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt single power supply operation — Minimizes system-level power requirements ■ High performance

IDT49C410

Abstract: IDT49C402 IDT49C818
Contextual Info: FAST CMOS OCTAL REGISTER W ITH SPC Serial P r o t o c o l C h a n n e l ADVANCE INFORMATION IDT49C818 Inu'-v«1 DESCRIPTION: FEATURES: • High-speed non-inverting 8-bit parallel register for any data path, control path or pipelining application • Pin-out similar to the Am29818 and 54/74S818, but uses an

L256ML

Abstract: transistor marking A21 uAM29LV256M L256MH12V amd part marking L256mh LAA064 Product Selector Guide
Contextual Info: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations

Contextual Info: a A d v a n c e Inform ation Am27C800 8 Megabit 1,048,576 x 8-bit/524,288 x 16-Bit ROM Compatible CMOS EPROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS m • ■ ■ Fast access time -1 2 0 ns Low power consumption - 25 nA typical CMOS standby current

AM29C953

Abstract: Am29C855 AM29C853
Contextual Info: A m 29C 833/A m 29C 853/A m 29C 855 A m 29C 933/A m 29C 953/A m 29C 955 Am29C833/Am29C853/Am29C855 Am29C933/Am29C953/Am29C955 High-Performance CMOS Parity Bus Transceivers DISTINCTIVE CHARACTERISTICS • • • • High-speed CMOS bidirectional bus transceivers

CFV024

Abstract: AM27C49 AM27C49T35PC CDV024 AM27C49T
Contextual Info: Am27C49 65,536-Bit 8192x8 High-Performance CMOS PROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS High-speed (35 ns)/Low-Power (90 mA) CMOS EPROM Technology Direct plug-in replacement for Bipolar PROMs JEDEC-approved pinout S-Volt ±10% power supplies for both Commer­

L640ML12P

Abstract: 64 fortified bga ei 306 20 64
Contextual Info: ADVANCE INFORMATION Am29LV640MH/L 64 Megabit 4 M x 16-Bit/8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 V for read, erase, and program operations

PCB VK 557

Abstract: AM27C191 AM27C291 PD3024 am27c
Contextual Info: a Am27C191 /Am27C291 16,384-Bit 2048x8 High-Performance CMOS PROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-speed (25 ns)/Low-Power (60 mA) CMOS EPROM Technology • 5-Volt ±10% power supplies for both Commercial and Military • Direct plug-ln replacement for Bipolar PROMs —

AM26LS32

Contextual Info: Product specification Philips Semiconductors-Signetlcs Linear Products Quad high-speed differential line receivers PIN CONFIGURATION FEATURES • Input voltage range of 15V differential or common mode on AM26LS33; 7V (differential or common mode) on AM26LS32

AM27C49

Abstract: AM27C49T-55
Contextual Info: Am27C49 65,536-Bit 8192x8 High-Performance CMOS PROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS High-speed (35 ns)/Low-Power (90 mA) CMOS EPROM Technology Direct plug-in replacement for Bipolar PROMs — JEDEC-approved pinout S-Volt ±10% power supplies for both Commer­

Contextual Info: ADVANCE INFORM ATION AMD£1 Am29F160D 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 5.0 Volt-only, Boot or Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt single power supply operation ■ — Minimizes system-level power requirem ents ■

Contextual Info: ADVANCE INFORMATION AM D Am29F160D 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 5.0 Volt-only, Boot or Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt single power supply operation ■ — Minimizes system-level power requirem ents ■ High perform ance

Contextual Info: AMDB Am29LV102B 2 Megabit 256 K x 8-Bit CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and

LAA064

Abstract: g6 amd
Contextual Info: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations

Contextual Info: ADV MICRO MEMORY 14E D | 0ES752fl üa27t.?S Am27C49 =1 Adva^ 65,536-Bit (8192x8 High-Performance CMOS PROM Devices DISTINCTIVE CHARACTERISTICS • • • High-speed (35 ns)/Low-Power (90 mA) CMOS EPROM Technology Direct plug-ln replacement for Bipolar PROMs —

Am29LV256MH

Abstract: 64-ball ei 306 20 64
Contextual Info: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations

29c833

Abstract: 29C933 amd 955
Contextual Info: Am29C833/Am29C853/Am29C855 Am29C933/Am29C953/Am29C955 Am29C833/Am29C853/Am29C855 Am29C933/Am29C953/Am29C955 High-Performance CMOS Parity Bus Transceivers DISTINCTIVE CHARACTERISTICS • • • • High-speed CMOS bidirectional bustransceivers - T-R delay = 6 ns typical

AM29C953

Abstract: CD3024 PD3024 AM29C833BLA
Contextual Info: Am29C833/Am29C853/Am29C855 Am29C933/Am29C953/Am29C955 Am29C833/Am29C853/Am29C855 Am29C933/Am29C953/Am29C955 High-Performance CMOS Parity Bus Transceivers DISTINCTIVE CHARACTERISTICS • • • • High-speed CMOS bidirectional bustransceivers - T-R delay = 6 ns typical