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    PIN DIODES 10GHZ Search Results

    PIN DIODES 10GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    PIN DIODES 10GHZ Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: MA4AGP907 MA4AGFCP910 M/A-COM Products AlGaAs Flip Chip PIN Diodes Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V3 RoHS Compliant Chip Dimensions MA4GP907 and MA4GFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency


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    PDF MA4AGP907 MA4AGFCP910 MA4GP907 MA4GFCP910 MA4AGFCP910

    MA4GFCP910

    Abstract: PIN diodes 10GHZ
    Text: MA4AGP907 MA4AGFCP910 M/A-COM Products AlGaAs Flip Chip PIN Diodes Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V3 RoHS Compliant Chip Dimensions MA4AGP907 and MA4GFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency


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    PDF MA4AGP907 MA4AGFCP910 MA4GFCP910 MA4AGFCP910 MA4GFCP910 PIN diodes 10GHZ

    MA4AGFCP910

    Abstract: MA4AGP907 MA4AGSBP907 MADP
    Text: MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 Chip Dimensions MA4AGP907 and MA4AGFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed


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    PDF MA4AGP907 MA4AGFCP910 MA4AGP907 MA4AGFCP910 MA4AGSBP907 MADP

    madp pin diode

    Abstract: No abstract text available
    Text: MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes M/A-COM Products Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 RoHS Compliant Chip Dimensions MA4AGP907 and MA4AGFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency


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    PDF MA4AGP907 MA4AGFCP910 MA4AGFCP910 madp pin diode

    MA4AGFCP910

    Abstract: MA4AGP907 MA4AGSBP907
    Text: MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes V4 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions MA4AGP907 and MA4AGFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL


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    PDF MA4AGP907 MA4AGFCP910 MA4AGP907 MA4AGFCP910 MA4AGSBP907

    Untitled

    Abstract: No abstract text available
    Text: MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes V4 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions MA4AGP907 and MA4AGFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL


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    PDF MA4AGP907 MA4AGFCP910 MA4AGP907 MA4AGFCP910

    SN62 PB36 ag2

    Abstract: MA4BN1840-1
    Text: MA4BN1840-1 V2 Monolithic HMIC Integrated Bias Network 18 – 40 GHz Chip Layout Features • • • • • Broad Bandwidth Specified from 18 to 40 GHz Useable from 10GHz to 50GHz Extremely Low Insertion Loss. High RF-DC Isolation Rugged, Fully Monolithic, Glass Encapsulated


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    PDF MA4BN1840-1 10GHz 50GHz MA4BN1840-1 SN62 PB36 ag2

    Untitled

    Abstract: No abstract text available
    Text: MA4BN1840-1 Monolithic HMIC Integrated Bias Network M/A-COM Products Rev. V3 RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified 18 to 40GHz Usable 10GHz to 50 GHz Extremely Low Insertion Loss High RF-DC Isolation Rugged, Fully Monolithic Glass Encapsulation


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    PDF MA4BN1840-1 40GHz 10GHz MA4BN1840-1

    Untitled

    Abstract: No abstract text available
    Text: MA4BN1840-1 Monolithic HMIC Integrated Bias Network M/A-COM Products Rev. V3 RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified 18 to 40GHz Usable 10GHz to 50 GHz Extremely Low Insertion Loss High RF-DC Isolation Rugged, Fully Monolithic Glass Encapsulation


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    PDF MA4BN1840-1 40GHz 10GHz MA4BN1840-1

    ultrasonic proximity detector

    Abstract: ultrasonic proximity detector circuit MA4BN1840-1
    Text: MA4BN1840-1 Monolithic HMIC Integrated Bias Network RoHS Compliant Rev. V3 Features ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified 18 to 40GHz Usable 10GHz to 50 GHz Extremely Low Insertion Loss High RF-DC Isolation Rugged, Fully Monolithic Glass Encapsulation


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    PDF MA4BN1840-1 40GHz 10GHz MA4BN1840-1 ultrasonic proximity detector ultrasonic proximity detector circuit

    MA4BN1840-1

    Abstract: No abstract text available
    Text: MA4BN1840-1 Monolithic HMIC Integrated Bias Network Rev. V3 Features •      Broad Bandwidth Specified 18 to 40GHz Usable 10GHz to 50 GHz Extremely Low Insertion Loss High RF-DC Isolation Rugged, Fully Monolithic Glass Encapsulation


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    PDF MA4BN1840-1 40GHz 10GHz MA4BN1840-1

    Untitled

    Abstract: No abstract text available
    Text: Very Wideband RF Choke 50Ω TCCH-80+ 50 to 8200 MHz Maximum Ratings Operating Temperature Features • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ. • usable up to 10GHz


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    PDF TCCH-80+ 10GHz GU1041 2002/95/EC) TB-272 PL-147) M108294 ED-11032/4

    Untitled

    Abstract: No abstract text available
    Text: Very Wideband RF Choke 50Ω TCCH-80+ 50 to 8200 MHz Maximum Ratings Features Operating Temperature • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ. • usable up to 10GHz


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    PDF TCCH-80+ 10GHz GU1041 2002/95/EC) TB-272 PL-147) M108294 ED-11032/4

    hitachi mosfet power amplifier audio application

    Abstract: transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram hvm15 varicap UHF/VHF booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI
    Text: C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION: • UHV / VHF Tuners


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    PDF AmVC132 HVC133 HVC134 HVM131S HVM131SR HVM132 HVM132WK hitachi mosfet power amplifier audio application transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram hvm15 varicap UHF/VHF booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI

    Latching

    Abstract: Switches Coaxial Switches
    Text: Series CCT-39S COAX SWITCHES Multi-Throw DC-10 GHz, SP9T & SP10T Latching Coaxial Switch, Internal 50Ω Termination PART NUMBER DESCRIPTION CCT-39S Commercial Latching Multi-throw, DC-10GHz The CCT-39S is a broadband, multi-throw, electromechanical coaxial switch designed to switch a


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    PDF CCT-39S DC-10 SP10T DC-10GHz CCT-39S -39SX90-MS CCT-39SX00-DS CCT-39SX90-R Latching Switches Coaxial Switches

    cdma Booster schematic

    Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
    Text: May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com/smallsignaldiscretes Table of Contents Applications Mobile Communication ……………. Consumer …………………………………. Automotive & Industrial.………….


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    PDF B132-H9014-X-X-7600 NB07-1094 cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz

    LTC6409UDB

    Abstract: LTC6409IUDB LTC6409 LTC6409CUDB#TRMPBF LTC6409HUDB 1043D LTC6409CUDB LTC2262-14 LTC6409C LTC6409H
    Text: LTC6409 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver Description Features 10GHz Gain-Bandwidth Product n 88dB SFDR at 100MHz, 2V P-P n 1.1nV/√Hz Input Noise Density n Input Range Includes Ground n External Resistors Set Gain Min 1V/V n 3300V/µs Differential Slew Rate


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    PDF LTC6409 10GHz 100MHz, 10-Lead 8dB/14dB/20dB/26dB LTC6401-20/LTC6401-26 LTC6406/LTC6405 70dBc/ 65dBc LTC6409UDB LTC6409IUDB LTC6409 LTC6409CUDB#TRMPBF LTC6409HUDB 1043D LTC6409CUDB LTC2262-14 LTC6409C LTC6409H

    LTC6409IUDB

    Abstract: LTC6409 LTC2262-14 LTC6409C LTC6409CUDB LTC6409H LTC6409HUDB Marking C4 LTC6409UDB
    Text: LTC6409 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver Description Features 10GHz Gain-Bandwidth Product n 88dB SFDR at 100MHz, 2V P-P n 1.1nV/√Hz Input Noise Density n Input Range Includes Ground n External Resistors Set Gain Min 1V/V n 3300V/µs Differential Slew Rate


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    PDF LTC6409 10GHz 100MHz, 10-Lead 8dB/14dB/20dB/26dB LTC6401-20/LTC6401-26 LTC6406/LTC6405 70dBc/ 65dBc LTC6409IUDB LTC6409 LTC2262-14 LTC6409C LTC6409CUDB LTC6409H LTC6409HUDB Marking C4 LTC6409UDB

    6409f

    Abstract: LTM9011-14 LTC6409
    Text: LTC6409 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver DESCRIPTION FEATURES n n n n n n n n n n n n 10GHz Gain-Bandwidth Product 88dB SFDR at 100MHz, 2VP-P 1.1nV/√Hz Input Noise Density Input Range Includes Ground External Resistors Set Gain Min 1V/V


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    PDF LTC6409 10GHz 100MHz, 300V/Â 10-Lead LTC6401-20/LTC6401-26 LTC6406/LTC6405 70dBc/â 65dBc 6409f LTM9011-14 LTC6409

    ku-band pll lnb

    Abstract: MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)


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    PDF 11a/b/g AV00-0061EN AV00-0116EN ku-band pll lnb MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package

    MESFET Application

    Abstract: hitachi mosfet power amplifier audio application 2sk2685 spice 00E-12 hitachi mosfet audio application note Hitachi audio mosfet application booster gsm antenna hitachi discrete circuit diagram wireless video transmitter and re 2SK239A
    Text: C 1998 Dirk Plha HITACHI Hitachi Discrete Devices for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Discrete Devices for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION:


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    PDF 49E-13 00E-01 00E-06 44E-13 HVC133 30E-12 27E-15 HVM132WK MESFET Application hitachi mosfet power amplifier audio application 2sk2685 spice 00E-12 hitachi mosfet audio application note Hitachi audio mosfet application booster gsm antenna hitachi discrete circuit diagram wireless video transmitter and re 2SK239A

    ISDB-t modulator

    Abstract: ku-band pll lnb HP 5082-3081 MMIC SOT 363 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 mga-62563 mga 51563 MGA-30316
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)


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    PDF 11a/b/g AV00-0116EN AV00-0141EN ISDB-t modulator ku-band pll lnb HP 5082-3081 MMIC SOT 363 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 mga-62563 mga 51563 MGA-30316

    Untitled

    Abstract: No abstract text available
    Text: m G E C PLESSEY CT3551-1.2 PIN DIODES - INTRODUCTION IN TR O D U C TIO N PIN diodes are devices whose impedance to high frequency signals can be controlled by a d.c. or low frequency bias signal. They can be supplied as unencapsulated chips or in a wide variety of packages suitable for applications from less


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    PDF CT3551-1 DC2400A DC2600A DA2000

    diode ph-150

    Abstract: ph-30 diode LM 3140 diode ph-30 LM 3141
    Text: What H E W L E T T mLfiM P A C K A R D Hermetic PIN Diodes for Stripline/M icrostrip Sw itches/ A ttenuators Technical Data 5082-3140 5082-3141 Features Outline 60 • Broadband Operation HF through X-Band • Low Insertion Loss Less than 0.5 dB to 10 GHz


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    PDF AN929: diode ph-150 ph-30 diode LM 3140 diode ph-30 LM 3141