PO403
Abstract: CTP01 ISA07 CTP04 BCT04 ISA08 CTP06 LIN06 BCT02 CTB04
Text: Price Sales Catalog Transaction Set 832 (Outbound from TI) Draft Copy ANSI X12 Version Format: 3010 Date: June 1, 1994 Copyright 1994 Texas Instruments Inc. All Rights Reserved The information and/or drawings set forth in this document and all rights in and to inventions
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IEA01
IEA02
PO403
CTP01
ISA07
CTP04
BCT04
ISA08
CTP06
LIN06
BCT02
CTB04
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SAMSUNG DDR4
Abstract: FR24 FR29 speed pid.c SAMSUNG tv scheme FRQ24
Text: ADVANCE INFORMATION KS0123 Data Sheet MULTIMEDIA VIDEO DIGITAL VIDEO ENCODER The KS0123 multi-standard video encoder converts CCIR 656 8-bit multiplexed digital component video into analog baseband signals. It outputs composite video CVBS and S-Video simultaneously at three analog output pins.
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KS0123
SAMSUNG DDR4
FR24
FR29
speed pid.c
SAMSUNG tv scheme
FRQ24
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275 A 23 200 E
Abstract: MS312002-20PC Z105
Text: MOSEL MS312002 262,144 X 8 CMOS Mask Programmable ROM 32 Pin DIP FEATURES DESCRIPTION • Access time: 200ns The M S 3 1 2 002 high performance R ead Only Memory is organ ized as 2 62 ,14 4 bytes by 8 bits. It is designed to be compatible with all microprocessors and similar applications where high
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MS312002
200ns
220mW
MS312002
MS312002-20
PID055
MS312002-20PC
P32-2
275 A 23 200 E
Z105
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MC5727
Abstract: TIL 729 A10C MS318003-20PC MS318003-20QC
Text: M OSEL MS318003 512K X 16, 1 MEG X 8 CMOS Mask Programmable ROM FEATURES DESCRIPTION • A c c e s s tim e: 2 0 0 n s m ax. T h e M O S E L M S 3 1 8 0 0 3 is a C M O S S l-g a te m a s k -p ro g ra m m a b le static re a d only m e m o ry o rg a n iz e d a s 5 2 4 ,2 8 8 w o rd s by 16 bits,
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MS318003
200ns
275mW
MS318003
PID059
MS318003-20PC
P42-1
MS318003-20QC
MC5727
TIL 729
A10C
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Untitled
Abstract: No abstract text available
Text: MOSEL MS314002 524,288 X 8 CMOS Mask Programmable ROM Compatible with All 32 Pin DIP EPROMs FEATURES DESCRIPTION • Access time: 200ns The M S 3 14 0 0 2 high performance R ead Only Memory is organ ized as 5 2 4 ,2 8 8 bytes by 8 bits It is designed to be compatible
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200ns
MS314002
MS314002-20
PID056
P32-2
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Untitled
Abstract: No abstract text available
Text: MOSEL MS314003 256K X16, 512K X 8 CMOS Mask Programmable ROM FEATURES DESCRIPTION • Two organizations selectable by BYTE pin The MS314003 is a CMOS Sl-gate mask-programmable static read only memory organized as 262,144 words by 16 bits. 524,288 words by 8 bits .
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MS314003
200ns
220mW
40-pin
64-pin
MS314003
PID057
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2943666671
Abstract: fr014 l289 FR2 material data sheet BEAD, WOUND FERRITE, 2943666671 FRQ24 FRQ05 fr024 Video cvbs 656 act ddr2 he ntc
Text: ADVANCE INFORMA TION KS0123 Data Sheet MULTIMEDIA VIDEO DIGITAL VIDEO ENCODER The KS0123 multi-standard video encoder converts CCIR 656 8-bit multiplexed digital component video into analog baseband signals. It outputs composite video CVBS and S-Video simultaneously at three analog output pins.
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KS0123
2943666671
fr014
l289
FR2 material data sheet
BEAD, WOUND FERRITE, 2943666671
FRQ24
FRQ05
fr024
Video cvbs 656
act ddr2 he ntc
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Untitled
Abstract: No abstract text available
Text: MOSEL MS314003 256KX16, 512K X 8 CMOS Mask Programmable ROM FEATURES DESCRIPTION • T w o o rga n izatio n s se le cta b le by B Y TE pin T h e M S 3 14 0 0 3 is a C M O S S l-g a te m a sk-p ro g ra m m a b le static read only m e m ory o rga n ized a s 2 6 2 ,1 4 4 w ord s by 16 bits.
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MS314003
256KX16,
MS314003-20
PID057
MS314003-20PC
MS314003-20QC
P40-1
Q64-1
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Untitled
Abstract: No abstract text available
Text: MOSEL MS621000 1048576 131,072 x 8 CMOS Static RAM with Data Retention and Low Power ADVANCE INFORMATION FEATURES DESCRIPTION • Available in 80/100/120 ns (Max.) The MOSEL MS621000 is a high performance, low power CMOS static RAM organized as 131,072 words by 8 bits.
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MS621000
MS621000
MS62TION
S621000-80PC
P32-2
S621000-80FC
S32-1
621000L-80P
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Untitled
Abstract: No abstract text available
Text: MOSEL MS318002 1,048,576 X 8 CMOS Mask Programmable ROM 32 Pin DIP FEATURES DESCRIPTION • Access time: 200ns The MS318002 high performance Read Only Memory is organ ized as 1,048,576 bytes by 8 bits. It is designed to be compatible with all microprocessors and similar applications where high
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OCR Scan
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PDF
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MS318002
200ns
MS318002
275mW
PID058
MS318002-20
P32-2
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Untitled
Abstract: No abstract text available
Text: MOSEL MS312002 262,144X8 CMOS Mask Programmable ROM 32 Pin DIP FEATURES DESCRIPTION • Access time: 200ns The MS312002 high performance Read Only Memory is organ ized as 262,144 bytes by 8 bits. It is designed to be compatible with all microprocessors and similar applications where high
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MS312002
144X8
200ns
MS312002
220mW
PID055
MS312002-20PC
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Untitled
Abstract: No abstract text available
Text: MOSEL MS64101 32K x 9 High Speed CMOS Static RAM with Parity Generator and Checker FEATURES DESCRIPTION • Organization: 32768 words x 9 bits The MOSEL MS64101 Parity RAM is a high speed, CMOS Static RAM with internal parity generation and parity error detection circuitry. It is organized as 32,768 x 9; the 9th
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MS64101
MS64101
715mW
605mW
138mW
500mV
MS64101-25NC
MS64101-35NC
MS64101-25FC
MS64101-35FC
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Untitled
Abstract: No abstract text available
Text: MOSEL MS314002 524,288 X 8 CMOS Mask Programmable ROM Compatible with All 32 Pin DIP EPROMs FEATURES DESCRIPTION • Access time: 200ns The MS314002 high performance Read Only Memory is organ ized as 524,288 bytes by 8 bits. It is designed to be compatible
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MS314002
200ns
MS314002
220mW
275nW
PID056
P32-2
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Untitled
Abstract: No abstract text available
Text: MOSEL MS621000 A D V A N C E IN F O R M A T IO N 1048576 131,072 x 8 CMOS Static RAM with Data Retention and Low Power FEATURES DESCRIPTION • Available in 8 0 /1 0 0 /1 2 0 ns (M ax.) T h e M O S E L M S 6 2 1 0 0 0 is a high perform ance, low power C M O S static R A M organized as 1 3 1 ,0 7 2 words by 8 bits.
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MS621000
PID051
MS621000-80PC
MS621000-80FC
MS621000L-80PC
MS621000L-80FC
MS621000-1OPC
MS621000-10FC
MS621000L-10PC
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Untitled
Abstract: No abstract text available
Text: MOSEL MS64101 ADVANCE INFORMATION 32K x 9 High Speed CMOS Static RAM FEATURES DESCRIPTION • High speed - 25/35 ns Max. The MOSEL MS64101 is a high performance, low power CMOS static RAM organized as 32768 words by 9 bits. The device supports easyrnemory expansion with both an
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MS64101
MS64101
715mW
138mW
PID050
S64101-25NC
P32-3
S64101-35NC
S64101-25FC
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MS621000-10FC
Abstract: MS621000-80FC MS621000-80PC MS621000L-80PC P322
Text: MOSEL MS621000 1048576 131,072 x 8 CMOS Static RAM with Data Retention and Low Power ADVANCE INFORMATION FEATURES DESCRIPTION • Available in 80/100/120 ns (Max.) The MOSEL MS621000 is a high performance, low power CMOS static RAM organized as 131,072 words by 8 bits.
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MS621000
MS621000L
MS621000
PID051
MS621000-80PC
P32-2
MS621000-80FC
S32-1
MS621000-10FC
MS621000L-80PC
P322
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Untitled
Abstract: No abstract text available
Text: M OSEL MS314002 524,288 X 8 CMOS Mask Programmable ROM Compatible with All 32 Pin DIP EPROMs FEATURES DESCRIPTION • Access time: 200ns T h e M S 3 14 0 0 2 high performance Read Only Memory is organ ized as 5 2 4 ,2 8 8 bytes by 8 bits. It is designed to be compatible
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MS314002
200ns
220mW
275nW
MS314002
PID056
MS314002-20
P32-2
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Untitled
Abstract: No abstract text available
Text: MOSEL MS312002 ~\J 262,144 X 8 CMOS Mask Programmable ROM 32 Pin DIP FEATURES DESCRIPTION • Access time: 200ns The MS312002 high performance Read Only Memory is organ ized as 262,144 bytes by 8 bits. It is designed to be compatible with all microprocessors and similar applications where high
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OCR Scan
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PDF
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200ns
220mW
MS312002
MS312002
PID055
MS312002-20PC
P32-2
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AX1015
Abstract: No abstract text available
Text: MOSEL / MS318002 / 1,048,576 X 8 CMOS Mask Programmable ROM 32 Pin DIP FEATURES DESCRIPTION • Access time: 200ns T h e MSS 18002 high performance Read Only Memory is organ ized as 1,0 4 0,57 6 bytes by 8 bits It is designed to be compatible with all microprocessors and similar applications where high
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200ns
MS318002
PID058
P32-2
AX1015
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Untitled
Abstract: No abstract text available
Text: KS0123 Multimedia ELECTRONICS DIGITAL VIDEO ENCODER The KS0123 multi - standard video encoder converts CCIR 656 8 - bit multiplexed digital component video into analog baseband signals. It output ccomposite video C V BS and S - Video simultaneoulsy at three
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KS0123
KS0123
33b4b
32-PLCC-REC.
44-PLCC-SQ.
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CE-v1H
Abstract: MS314003-20PC MS314003-20QC
Text: MOSEL MS314003 256K X 16, 512K X 8 CMOS Mask Programmable ROM FEATURES DESCRIPTION • Tw o organizations selectable by B YTE pin Th e M S 3 14 0 0 3 is a C M O S Sl-gate m ask-program mable static read only memory organized as 2 6 2 ,1 4 4 words by 16 bits.
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MS314003
200ns
220mW
40-pin
64-pin
MS314003
A0-A17
PID057
CE-v1H
MS314003-20PC
MS314003-20QC
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Untitled
Abstract: No abstract text available
Text: MOSEL MS318002 1,048,576 X 8 CMOS Mask Programmable ROM 32 Pin DIP FEATURES DESCRIPTION • Access time: 200ns The MS318002 high performance Read Only Memory is organ ized as 1,048,576 bytes by 8 bits. It is designed to be compatible with all microprocessors and similar applications where high per
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PDF
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MS318002
200ns
257mW
275nW
MS318002
10OpF
PID058
MS318002-20
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CI 576
Abstract: No abstract text available
Text: MOSEL MS318002 1,048,576 X 8 CMOS Mask Programmable ROM 32 Pin DIP FEATURES DESCRIPTION • Access time: 200ns The M S 3 18 0 0 2 high performance R ead Only Mem ory is organ ized as 1,048,576 bytes by 8 bits. It is designed to be compatible with all microprocessors and similar applications where high
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S318002
200ns
275mW
275jiW
MS318002
PID058
MS318002
MS318002-20
P32-2
CI 576
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Untitled
Abstract: No abstract text available
Text: MOSEL MS314002 524,288 X 8 CMOS Mask Programmable ROM Compatible with All 32 Pin DIP EPROMs FEATURES DESCRIPTION • Access time: 200ns The MS314002 high performance Read Only Memory is organ ized as 524,288 bytes by 8 bits. It is designed to be compatible
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MS314002
200ns
220mW
MS314002
S314002
100pF
MS314002-20
PID056
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