PHOTOTRANSISTOR SENSOR Search Results
PHOTOTRANSISTOR SENSOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MRUS74SK-001 | Murata Manufacturing Co Ltd | Magnetic Sensor |
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MRUS74SD-001 | Murata Manufacturing Co Ltd | Magnetic Sensor |
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MRMS581P | Murata Manufacturing Co Ltd | Magnetic Sensor |
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MRMS591P | Murata Manufacturing Co Ltd | Magnetic Sensor |
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MRMS791B | Murata Manufacturing Co Ltd | Magnetic Sensor |
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PHOTOTRANSISTOR SENSOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Sensors Basic increments for ordering Basic order increments FInfrared LEDs FPhotointerrupters S Phototransistor output molded type FPhototransistors S Phototransistor output (case type) S Digital output FReflective photosensors (photoreflectors) S Phototransistor output |
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phototransistorContextual Info: Sensors Sensor product tables FInfrared Light Emitting Diodes FPhototransistors 150 Sensor product tables Sensors Sensor product tables FPhotointerrupters S Phototransistor output molded type S Phototransistor output (encased type) 151 Sensors S Digital phototransistor output |
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Contextual Info: Phototransistor S4404-01 High sensitivity phototransistor S4404-01 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications Miniature plastic package with lens Tape start/end mark sensor for VTRs, etc. Visible-cut package |
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S4404-01 S4404-01 SE-171 KPTR1002E02 | |
Contextual Info: Phototransistor S4404-18 High sensitivity phototransistor S4404-18 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications Miniature plastic package with lens Tape start/end mark sensor for VTRs, etc. Visible-cut package |
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S4404-18 S4404-18 SE-171 KPTR1005E01 | |
KPCB0001EA
Abstract: S2829 SE-171
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S2829 S2829 SE-171 KPTR1001E02 KPCB0001EA | |
phototransistor 500-600 nm
Abstract: phototransistor 600 nm S2829 KPCB0001EA SE-171
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S2829 S2829 SE-171 KPTR1001E02 phototransistor 500-600 nm phototransistor 600 nm KPCB0001EA | |
phototransistor 600 nm
Abstract: phototransistor visible light high sensitivity phototransistor KPCB0001EA S4404-01 SE-171
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S4404-01 S4404-01 SE-171 KPTR1002E02 phototransistor 600 nm phototransistor visible light high sensitivity phototransistor KPCB0001EA | |
high sensitivity phototransistor
Abstract: KPCB0001EA S4404-01 SE-171
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S4404-01 S4404-01 SE-171 KPTR1002E01 high sensitivity phototransistor KPCB0001EA | |
Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT277 PACKAGE DIMENSIONS DESCRIPTION! The MCT277 ¡s a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. |
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MCT277 E50151 C1686 C1679 C1243 | |
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT270 PACKAGE DIMENSIONS DESCRIPTIO N The MCT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor. WWW |
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MCT270 MCT270 E90700 ST1603A C1682 C1681 C1683 C1685 C1296A 74bfc | |
Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT270 PACKAGE DIMENSION! DESCRIPTION The M CT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. |
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MCT270 MCT270 2500VAC 3000VAC E50151 C2090 C1681 C1682 C1683 C1684 | |
PC3HU72YIP0B
Abstract: GP2AP002S00F GP1S296HCPSF GP1A173LCS2F GP2AP002A00F GP1UXC4xQS PC815XNNSZ0F GP1A101C2KSF GP2Y0A60SZLF GP1S173LCS2F
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PC35x series/PC451J00000F PC364NJ0000F PC355NJ0000F PC367NJ0000F PC354NJ0000F PC365NJ0000F PC3HU72YIP0B GP1UF31xXP0F: GP1UF31xYP0F: PC3HU72YIP0B GP2AP002S00F GP1S296HCPSF GP1A173LCS2F GP2AP002A00F GP1UXC4xQS PC815XNNSZ0F GP1A101C2KSF GP2Y0A60SZLF GP1S173LCS2F | |
Contextual Info: OPTOELECTRONICS I PHOTOTRANSISTOR OPTOCOUPLER MCT271 DESCRIPTION PACKAGE DIMENSIONS db & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. |
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MCT271 MCT271 E90700 C1682 C1681 C1683 C1684 C1296A 74bbfl51 C1294 | |
C1685 transistor
Abstract: transistor c1684 C1681 C2079 KJh transistor TRANSISTOR C1685 C1679 C1680 C1686 MCT271
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MCT271 ST1603A C2079 E90700 C1682 C1683 C1684 C1685 C1296A C1685 transistor transistor c1684 C1681 C2079 KJh transistor TRANSISTOR C1685 C1679 C1680 C1686 MCT271 | |
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C1681
Abstract: transistor c1684 c1685 NPN C1685 transistor t051
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MCT272 MCT272 Ratio--75% time--10 E50151 C2090 C1683 C1684 C1294 C1681 transistor c1684 c1685 NPN C1685 transistor t051 | |
C1243
Abstract: C2090
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MCT276 MCT276 E5015CAL C1686 C1679 C1680 C1243 C1243 C2090 | |
TIL111
Abstract: C1681
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TIL111 TIL111 E50151 C2079 C1686 C1679 C1680 C1681 C1682 | |
C1684
Abstract: C1683 C1681 transistor c1684 C1684 transistor transistor c1682 C1296A
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MCT271 MCT271 E90700 C1682 C1681 C1683 C1684 C1296A transistor c1684 C1684 transistor transistor c1682 C1296A | |
Contextual Info: su PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is |
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TIL111 TIL111 E90700 ST1603A C2079 74bbfi C1684 C1683 C1685 C1294 | |
TIL111Contextual Info: PHOTOTRANSISTOR OPTOISOLATOF OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type o ptically coupled isolator. An infrared em itting diode m anufactured from specially grow n gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is |
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TIL111 TIL111 ST1603A C2079 C1686 C1679 C1680 C1682 C1681 | |
PT100MF1MP
Abstract: phototransistor sharp
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PT100MF1MP PT100MF1MP phototransistor sharp | |
Contextual Info: SILICON SENSORS PHOTOINTERRUPTERS PHOTOINTERRUPTER PERFORMANCE SPECIFICATIONS Photointerrupters consist of an infrared emitting diode facing a silicon NPN phototransistor packaged in a black thermoplastic housing. The phototransistor switches from high to low |
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SS750-20 100pps | |
c1251
Abstract: C1336 C1240 diode C1109 C1240 C1321 C1322 C1324 MCT276 S555
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MCT276 E50151 MCT276 Cto150Â c1251 C1336 C1240 diode C1109 C1240 C1321 C1322 C1324 S555 | |
phototransistor 800 nm
Abstract: datasheet phototransistor Phototransistor EPH-3260 500LUX
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EPH-3260 500Lux 100pe phototransistor 800 nm datasheet phototransistor Phototransistor EPH-3260 500LUX |