Untitled
Abstract: No abstract text available
Text: Phototransistor S2829 Subminiature package phototransistor The S2829 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Application Subminiature plastic package with lens Rotary encoders Visible-cut package Touch screen
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S2829
S2829
B1201,
KPTR1001E03
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PC852XNNSZ0F
Abstract: pc3hu7xyip PC357NJ0000F
Text: OPTO • Photocoupler PHOTOCOUPLER LINEUP Lineup <Phototransistor output type> Output type Single phototransistor Features Model No. series General purpose, High collector-emitter voltage Low input current AC input response Darlington phototransistor High sensitivity,
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PC357NJ0000F
PC451J00000F
PC364NJ0000F
PC355NJ0000F
PC452J00000F
PC367NJ0000F
PC354NJ0000F
PC365NJ0000F
PC925LENSZ0F
PC928J00000Fâ
PC852XNNSZ0F
pc3hu7xyip
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PC925LE
Abstract: GP2Y0A60 pc815xnns pc3sd13 GP2Y0A02YK PR36MF51NS PC357NJ0000F
Text: OPTO • Photocoupler PHOTOCOUPLER LINEUP Lineup <Phototransistor output type> Output type Single phototransistor Features Model No. series General purpose, High collector-emitter voltage Low input current AC input response Darlington phototransistor High sensitivity,
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PC357NJ0000F
PC451J00000F
PC364NJ0000F
PC355NJ0000F
PC452J00000F
PC367NJ0000F
PC354NJ0000F
PC365NJ0000F
GP1UF31xXP0F:
GP1UF31xYP0F:
PC925LE
GP2Y0A60
pc815xnns
pc3sd13
GP2Y0A02YK
PR36MF51NS
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PT200MC0NP
Abstract: phototransistor sharp PT202MR0MP1 GL610T PD60T PT600T
Text: PHOTOTRANSISTOR Revised version Dec. 10, 2003 Model PT202MR0MP1 Sales & Marketing Group -Electronic Components & Devices Infrared-cutoff, Small Chip Phototransistor Features Outline Dimensions Since the phototransistor has spectral sensitivity characteristics that are close to spectral luminous
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PT202MR0MP1
CollectPT200MC0NP
GL610T
PD60T
PT201MR0MP
PT202MR0MP1
PT200MC0NP
phototransistor sharp
GL610T
PD60T
PT600T
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PDF
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Untitled
Abstract: No abstract text available
Text: Phototransistor S4404-01 High sensitivity phototransistor S4404-01 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications Miniature plastic package with lens Tape start/end mark sensor for VTRs, etc. Visible-cut package
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S4404-01
S4404-01
SE-171
KPTR1002E02
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Untitled
Abstract: No abstract text available
Text: Phototransistor S4404-18 High sensitivity phototransistor S4404-18 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications Miniature plastic package with lens Tape start/end mark sensor for VTRs, etc. Visible-cut package
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S4404-18
S4404-18
SE-171
KPTR1005E01
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hamamatsu CDs photoconductive cells kk
Abstract: hamamatsu CDs photoconductive
Text: PRELIMINARY PHOTOTRANSISTOR Phototransistor S10084, S10115 Phototransistor having spectral response close to human eye sensitivity S10084 and S10115 are phototransistors with spectral response close to the visual sensitivity human eye sensitivity . S10084 is sealed in a
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S10084,
S10115
S10084
S10115
S10084)
S10115)
SE-171
KPTR1004E01
hamamatsu CDs photoconductive cells kk
hamamatsu CDs photoconductive
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MOC256
Abstract: MOC256M
Text: AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOC256-M DESCRIPTION The MOC256 is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector.
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MOC256-M
MOC256
E90700
MOC256V-M)
MOC256M
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Infrared Phototransistor
Abstract: QEE213 QSE213 QSE214
Text: QSE213/QSE214 Plastic Silicon Infrared Phototransistor Features Description • ■ ■ ■ ■ ■ The QSE213/QSE214 is a silicon phototransistor encapsulated in a medium angle, infrared transparent, black thin plastic sidelooker package. NPN Silicon Phototransistor
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QSE213/QSE214
QSE213/QSE214
QEE213
Infrared Phototransistor
QEE213
QSE213
QSE214
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PDF
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PT100MF1MP
Abstract: phototransistor sharp
Text: Under development New product PT100MF1MP Phototransistor Compact, Surface Mount Type Phototransistor Outline Dimensions 0.75 1.5 Unit : mm 1.5 0.4 1 2.2 (1) Compact, thin type(3.0 x 1.5 × 2.2mm) (2) Darlington phototransistor output (3) Surface mount type
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PT100MF1MP
PT100MF1MP
phototransistor sharp
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MOC256-M
Abstract: MOC256M
Text: AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOC256-M DESCRIPTION The MOC256-M is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector.
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MOC256-M
MOC256-M
E90700,
MOC256V-M)
MOC256M
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PDF
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AP3216
Abstract: AP3216P3C
Text: PHOTOTRANSISTOR AP3216P3C Features Description MECHANICALLY AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips. THE AP3216 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. PACKAGE : 2000PCS / REEL. RoHS COMPLIANT. Package Dimensions
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AP3216P3C
AP3216
2000PCS
DSAB4397
MAR/02/2005
100mW
AP3216P3C
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PDF
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KPA-3010P3BT
Abstract: No abstract text available
Text: PHOTOTRANSISTOR KPA-3010P3BT Description Features !MECHANICALLY AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips. THE KPA-3010P3C SERIES INFRARED EMITTING LED LAMP. !BLUE TRANSPARENT LENS. !PACKAGE : 2000PCS / REEL. Package Dimensions
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KPA-3010P3BT
KPA-3010P3C
2000PCS
DSAB7650
SEP/03/2002
100uA
20mW/cm2
940nm
KPA-3010P3BT
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PDF
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phototransistor datasheet
Abstract: MTLC0140-9
Text: MTLC0140-9 Data Sheet Phototransistor Chips High Gain Phototransistor Device Structure Base Electrode 1. NPN Phototransistor 2. Planar Type Active Area 3. Electrodes: 3.1 N Collector : Aluminum alloy (Front Side) Gold Alloy-(Back Side) 3.2 P (Base): Aluminum Alloy
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MTLC0140-9
phototransistor datasheet
MTLC0140-9
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GP1A101C2KSF
Abstract: pc3sh13 PC3HU7 GP1A054 GP1A173 GP1A173LCS2F GP2Y0A60 GP1A204HCS0 GP1A054RDKLF GP1A057SGKLF
Text: OPTO PHOTOCOUPLER LINEUP • Photocoupler Lineup <Phototransistor output type> Output type Single phototransistor Features Model No. series General purpose, High collector-emitter voltage, etc. PC35x series/PC451J00000F 56 Low input current PC367NJ0000F
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PC35x
series/PC451J00000F
PC367NJ0000F
PC354NJ0000F
PC364NJ0000F
PC355NJ0000F
PC365NJ0000F
PC3H71xNIP0F
PC4H510NIP0F
PC3H3J00000F/PC3H4J00000F
GP1A101C2KSF
pc3sh13
PC3HU7
GP1A054
GP1A173
GP1A173LCS2F
GP2Y0A60
GP1A204HCS0
GP1A054RDKLF
GP1A057SGKLF
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PDF
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AP2012P3C
Abstract: No abstract text available
Text: PHOTOTRANSISTOR AP2012P3C Features Description MECHANICALLY AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips. THE AP2012 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. PACKAGE : 2000PCS / REEL. RoHS COMPLIANT. Package Dimensions
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AP2012P3C
AP2012
2000PCS
DSAF1594
MAR/29/2005
100mW
AP2012P3C
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Untitled
Abstract: No abstract text available
Text: 2.0x1.25mm PHOTOTRANSISTOR Part Number: APT2012P3BT Description Features z 2.0mmx1.25mm SMT LED,0.75mm thickness. Made with NPN silicon phototransistor chips. z Mechanically and spectrally matched to infrared emitting LED lamp. z Package: 2000pcs / reel .
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APT2012P3BT
2000pcs
DSAH3784
WYNECAH3784
JUN/06/2012
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Untitled
Abstract: No abstract text available
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT277 PACKAGE DIMENSIONS DESCRIPTION! The MCT277 ¡s a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.
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MCT277
E50151
C1686
C1679
C1243
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PDF
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Untitled
Abstract: No abstract text available
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT270 PACKAGE DIMENSION! DESCRIPTION The M CT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.
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MCT270
MCT270
2500VAC
3000VAC
E50151
C2090
C1681
C1682
C1683
C1684
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PDF
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Untitled
Abstract: No abstract text available
Text: OPTOELECTRONICS I PHOTOTRANSISTOR OPTOCOUPLER MCT271 DESCRIPTION PACKAGE DIMENSIONS db & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.
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OCR Scan
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MCT271
MCT271
E90700
C1682
C1681
C1683
C1684
C1296A
74bbfl51
C1294
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PDF
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TIL111
Abstract: No abstract text available
Text: PHOTOTRANSISTOR OPTOISOLATOF OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type o ptically coupled isolator. An infrared em itting diode m anufactured from specially grow n gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is
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TIL111
TIL111
ST1603A
C2079
C1686
C1679
C1680
C1682
C1681
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICON SENSORS PHOTOINTERRUPTERS PHOTOINTERRUPTER PERFORMANCE SPECIFICATIONS Photointerrupters consist of an infrared emitting diode facing a silicon NPN phototransistor packaged in a black thermoplastic housing. The phototransistor switches from high to low
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SS750-20
100pps
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PDF
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c1251
Abstract: C1336 C1240 diode C1109 C1240 C1321 C1322 C1324 MCT276 S555
Text: DESIGNER SERIES MCT276 Monsanto PHOTOTRANSISTOR OPTOISOLATORS FEATURE SPECIFICATIONS DESCRIPTION • Highest speed discrete phototransistor optoisolator The MCT276 is a phototransistor-type optically coupled isolator. An infrared emitting diode manu factured from specially grown gallium arsenide is selec
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MCT276
E50151
MCT276
Cto150Â
c1251
C1336
C1240 diode
C1109
C1240
C1321
C1322
C1324
S555
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PDF
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CQY80NG
Abstract: 5n on UG16
Text: CQY80N G _ Vishay Telefunken Optocoupler with Phototransistor Output Description The CQY80N(G) series consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package.
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CQY80N
CNY80NG
11-Ja
CNY80N
CQY80NG
5n on
UG16
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