phototransistor
Abstract: No abstract text available
Text: Sensors Sensor product tables FInfrared Light Emitting Diodes FPhototransistors 150 Sensor product tables Sensors Sensor product tables FPhotointerrupters S Phototransistor output molded type S Phototransistor output (encased type) 151 Sensors S Digital phototransistor output
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PT008-33
Abstract: PT008
Text: epitex Opto-Device & Custom LED PHOTO-DIODE PT008-33 Lead Pb Free Product RoHS compliant PT008-33 mold type Phototransistor PT008-33 is an epoxy mold type phototransistor featuring high photo current. This phototransistor consists of a chip with 0.6*0.6mm active area mounted
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PT008-33
PT008-33
1000Lx
PT008
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ACPL-8x4
Abstract: No abstract text available
Text: ACPL-8x4 Multi-Channel Full-Pitch Phototransistor Optocoupler Data Sheet Description Features The ACPL-824 is an AC-input dual channel full-pitch phototransistor optocoupler which contains four light emitting diode optically coupled to two separate phototransistor. It is packaged in a 8-pin DIP package.
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ACPL-824
ACPL-844
16-pin
AV01-0475EN
ACPL-8x4
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PT008-05
Abstract: PT008
Text: epitex Opto-Device & Custom LED PHOTO-DIODE PT008-05 Lead Pb Free Product RoHS compliant PT008-05 mold type Phototransistor PT008-05 is an epoxy mold type phototransistor featuring high photo current. This phototransistor consists of a chip with 0.6*0.6mm active area mounted
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PT008-05
PT008-05
1000Lx
PT008
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PT010-05
Abstract: lens photodiode phototransistor
Text: epitex Opto-Device & Custom LED PHOTO-DIODE PT010-05 Lead Pb Free Product RoHS compliant PT010-05 mold type Phototransistor PT010-05 is an epoxy mold type phototransistor featuring high photo current. This phototransistor consists of a chip with 0.8*0.8mm active area mounted
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PT010-05
PT010-05
1000Lx
lens photodiode phototransistor
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PT010-33
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED PHOTO-DIODE PT010-33 Lead Pb Free Product RoHS compliant PT010-33 mold type Phototransistor PT010-33 is an epoxy mold type phototransistor featuring high photo current. This phototransistor consists of a chip with 0.8*0.8mm active area mounted
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PT010-33
PT010-33
1000Lx
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED PT010-33 PHOTO-DIODE PT010-33 mold type Phototransistor PT010-33 is an epoxy mold type phototransistor featuring high photo current. This phototransistor consists of a chip with 0.8*0.8mm active area mounted on a lead frame with a Φ3 clear epoxy lens.
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PT010-33
PT010-33
1000Lx
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED PT008-05 PHOTO-DIODE PT008-05 mold type Phototransistor PT008-05 is an epoxy mold type phototransistor featuring high photo current. This phototransistor consists of a chip with 0.6*0.6mm active area mounted on a lead frame with a Φ5 clear epoxy lens.
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PT008-05
PT008-05
1000Lx
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PC3HU72YIP0B
Abstract: GP2AP002S00F GP1S296HCPSF GP1A173LCS2F GP2AP002A00F GP1UXC4xQS PC815XNNSZ0F GP1A101C2KSF GP2Y0A60SZLF GP1S173LCS2F
Text: OPTO PHOTOCOUPLER LINEUP • Photocoupler Lineup <Phototransistor output type> Output type Single phototransistor Features Model No. series General purpose, High collector-emitter voltage, etc. Low input current AC input response Darlington phototransistor
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PC35x
series/PC451J00000F
PC364NJ0000F
PC355NJ0000F
PC367NJ0000F
PC354NJ0000F
PC365NJ0000F
PC3HU72YIP0B
GP1UF31xXP0F:
GP1UF31xYP0F:
PC3HU72YIP0B
GP2AP002S00F
GP1S296HCPSF
GP1A173LCS2F
GP2AP002A00F
GP1UXC4xQS
PC815XNNSZ0F
GP1A101C2KSF
GP2Y0A60SZLF
GP1S173LCS2F
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PC925LE
Abstract: GP2Y0A60 pc815xnns pc3sd13 GP2Y0A02YK PR36MF51NS PC357NJ0000F
Text: OPTO • Photocoupler PHOTOCOUPLER LINEUP Lineup <Phototransistor output type> Output type Single phototransistor Features Model No. series General purpose, High collector-emitter voltage Low input current AC input response Darlington phototransistor High sensitivity,
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PC357NJ0000F
PC451J00000F
PC364NJ0000F
PC355NJ0000F
PC452J00000F
PC367NJ0000F
PC354NJ0000F
PC365NJ0000F
GP1UF31xXP0F:
GP1UF31xYP0F:
PC925LE
GP2Y0A60
pc815xnns
pc3sd13
GP2Y0A02YK
PR36MF51NS
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PT200MC0NP
Abstract: phototransistor sharp PT202MR0MP1 GL610T PD60T PT600T
Text: PHOTOTRANSISTOR Revised version Dec. 10, 2003 Model PT202MR0MP1 Sales & Marketing Group -Electronic Components & Devices Infrared-cutoff, Small Chip Phototransistor Features Outline Dimensions Since the phototransistor has spectral sensitivity characteristics that are close to spectral luminous
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PT202MR0MP1
CollectPT200MC0NP
GL610T
PD60T
PT201MR0MP
PT202MR0MP1
PT200MC0NP
phototransistor sharp
GL610T
PD60T
PT600T
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Untitled
Abstract: No abstract text available
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT277 PACKAGE DIMENSIONS DESCRIPTION! The MCT277 ¡s a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.
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MCT277
E50151
C1686
C1679
C1243
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Untitled
Abstract: No abstract text available
Text: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT270 PACKAGE DIMENSIONS DESCRIPTIO N The MCT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor. WWW
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MCT270
MCT270
E90700
ST1603A
C1682
C1681
C1683
C1685
C1296A
74bfc
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Untitled
Abstract: No abstract text available
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT270 PACKAGE DIMENSION! DESCRIPTION The M CT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.
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MCT270
MCT270
2500VAC
3000VAC
E50151
C2090
C1681
C1682
C1683
C1684
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Untitled
Abstract: No abstract text available
Text: OPTOELECTRONICS I PHOTOTRANSISTOR OPTOCOUPLER MCT271 DESCRIPTION PACKAGE DIMENSIONS db & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.
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MCT271
MCT271
E90700
C1682
C1681
C1683
C1684
C1296A
74bbfl51
C1294
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C1685 transistor
Abstract: transistor c1684 C1681 C2079 KJh transistor TRANSISTOR C1685 C1679 C1680 C1686 MCT271
Text: [ S PHOTOTRANSISTOR OPTOCOUPLER U OPTOELECTRONICS MCT271 DESCRIPTION PACKAGE DIMENSIONS & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor.
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MCT271
ST1603A
C2079
E90700
C1682
C1683
C1684
C1685
C1296A
C1685 transistor
transistor c1684
C1681
C2079
KJh transistor
TRANSISTOR C1685
C1679
C1680
C1686
MCT271
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C1681
Abstract: transistor c1684 c1685 NPN C1685 transistor t051
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT272 PACKAGE DIMENSION! The MCT272 is a phototransistor-type optically coupled Isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r ~ 6.86 6.35
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MCT272
MCT272
Ratio--75%
time--10
E50151
C2090
C1683
C1684
C1294
C1681
transistor c1684
c1685
NPN C1685
transistor t051
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C1243
Abstract: C2090
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS MCT276 PACKAGE IENSIONS The MCT276 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode Is selectively coupled with a high speed NPN silicon phototransistor. r~ 6.86
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MCT276
MCT276
E5015CAL
C1686
C1679
C1680
C1243
C1243
C2090
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TIL111
Abstract: C1681
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOISOLATOR TIL111 DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is
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TIL111
TIL111
E50151
C2079
C1686
C1679
C1680
C1681
C1682
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C1684
Abstract: C1683 C1681 transistor c1684 C1684 transistor transistor c1682 C1296A
Text: C sö PHOTOTRANSISTOR OPTOCOUPLER DPTDELECîHGNiCS 1 MCT271 PACKAGE DIMENSIONS DESCRIPTION The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor.
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MCT271
MCT271
E90700
C1682
C1681
C1683
C1684
C1296A
transistor c1684
C1684 transistor
transistor c1682
C1296A
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Untitled
Abstract: No abstract text available
Text: su PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is
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TIL111
TIL111
E90700
ST1603A
C2079
74bbfiÂ
C1684
C1683
C1685
C1294
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TIL111
Abstract: No abstract text available
Text: PHOTOTRANSISTOR OPTOISOLATOF OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type o ptically coupled isolator. An infrared em itting diode m anufactured from specially grow n gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is
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TIL111
TIL111
ST1603A
C2079
C1686
C1679
C1680
C1682
C1681
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c1251
Abstract: C1336 C1240 diode C1109 C1240 C1321 C1322 C1324 MCT276 S555
Text: DESIGNER SERIES MCT276 Monsanto PHOTOTRANSISTOR OPTOISOLATORS FEATURE SPECIFICATIONS DESCRIPTION • Highest speed discrete phototransistor optoisolator The MCT276 is a phototransistor-type optically coupled isolator. An infrared emitting diode manu factured from specially grown gallium arsenide is selec
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MCT276
E50151
MCT276
Cto150Â
c1251
C1336
C1240 diode
C1109
C1240
C1321
C1322
C1324
S555
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C1684 r .85 transistor
Abstract: transistor c1684
Text: mm QUALITY PHOTOTRANSISTOR OPTOCOUPLER • [ te c h n o lo g ie s MCT275 DESCRIPTION The M CT275 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with a high voltage NPN silicon phototransistor.
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MCT275
MCT275
E50151
C1683
C1684
C1685
C1284
C1296A
C1684 r .85 transistor
transistor c1684
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