BPW14
Abstract: BPW14NA BPW14NC Telefunken Phototransistor BPW14N BPW14NB 950nm
Text: Te m ic TELEFUNKEN Semiconductors BPW 14 N Silicon NPN Phototransistor Description BPW 14N is a high speed silicon NPN epitaxial planar phototransistor in a standard TO -18 hermetically sealed metal case. Its glass lens, featuring a viewing angle o f ±10°
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BPW14N
GG11S1S
BPW14
BPW14NA
BPW14NC
Telefunken Phototransistor
BPW14NB
950nm
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BPW17
Abstract: tfk Phototransistor CQY 99
Text: S< BPW 16/9 • BPW 17/9 'V Neunteilige 9-Element Silicon NPN Epitaxial Planar Phototransistor Arrays Anwendungen: Lochstreifenabtastung A pplications: Punched card and tape readers Features: Besondere Merkmale:
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BPW76
Abstract: BPW76A BPW76B
Text: BPW 76 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPW76 is a high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its flat glass window makes it ideal for applications with external optics.
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BPW76
D-74025
BPW76A
BPW76B
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BPW77NB
Abstract: BPW77N BPW77NA
Text: TELEFUNKEN Semiconductors BPW 77 N Silicon NPN Phototransistor Description BPW77N is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its glass lens featuring a viewing angle of ±10°
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D-74025
BPW77NB
BPW77NA
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BPW13A
Abstract: BPW13B BPW13C BPW13 950NM
Text: BPW 13 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPW13 is a high speed silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its flat glass window makes it ideal for applications with external optics. A base terminal
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BPW13
D-74025
BPW13A
BPW13B
BPW13C
950NM
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BPW85
Abstract: BPW85A BPW85B BPW85C infrared 950nm
Text: BPW 85 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. Due to its waterclear epoxy the device is sensitive to visible
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BPW85
D-74025
BPW85A
BPW85B
BPW85C
infrared 950nm
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BPW16N
Abstract: CQY 24
Text: TELEFUNKEN Semiconductors BPW 16 N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are
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D-74025
CQY 24
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CQY 26
Abstract: BPW17N diode 8308
Text: TELEFUNKEN Semiconductors BPW 17 N Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are
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D-74025
CQY 26
diode 8308
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BPW14
Abstract: bpw 104 BPW14N BPW14NA BPW14NB BPW14NC 1BPW
Text: TELEFUNKEN Semiconductors BPW 14 N Silicon NPN Phototransistor Description BPW14N is a high speed silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its glass lens, featuring a viewing angle of ±10° makes it insensible to ambient straylight. A base
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D-74025
BPW14
bpw 104
BPW14NA
BPW14NB
BPW14NC
1BPW
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BPW78
Abstract: BPW78A BPW78B Telefunken Phototransistor ica 700
Text: TELEFUNKEN Semiconductors BPW 78 Silicon NPN Phototransistor Description BPW78 is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package. A small recessed lens provides a high sensitivity in a low profile case. The epoxy package itself is an IR filter, spectrally
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BPW78
850nm)
D-74025
BPW78A
BPW78B
Telefunken Phototransistor
ica 700
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bpw 104
Abstract: BPW96 BPW96A BPW96B BPW96C
Text: BPW 96 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.
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D-74025
bpw 104
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BPW96C
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tfk Phototransistor
Abstract: tfk 19 TFK BPW 20 transistor 2394 tfk bpw 76 diode s .* tfk phototransistor array BPW19 tfk 170 diode tfk 65
Text: BPW 19 - BPX 58 Zehnteilige Silizium-NPN-Epitaxial-Planar-Fototransistorzeile 10 Element Silicon NPN Epitaxial Planar Phototransistor Array Anwendungen: A btastgeräte, Lochstreifenleser Applications: Scanning equipments, tape readers Besondere Merkmale: • Kunststoffgehäuse
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J133
Abstract: Telefunken Electronic FLL100 a 4712 114144 BPW39 W-25 AL6G TD-325 COX-18
Text: TELEFUNKEN ELECTRONIC 17E D • fi'^OQ'ib OOOfiMlb 5 ■ AL66 BPW 39 ¥ LI FI!J1ÄIMelectronic ! CrMtMliKhnoipgtM Silicon NPN Epitaxial Planar Phototransistor Applications: Detector in electronic control and drive circuits Features: • Plastic case white clear
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0001141b
BPW39
10B3DIN41868
J133
Telefunken Electronic
FLL100
a 4712
114144
BPW39
W-25
AL6G
TD-325
COX-18
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Untitled
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC 17E D flTSD O Tb OQÜÔ4MÔ BPW 47 •DTfOJflRDIMIM] electronic Crtahve Tfechootog* Silicon NPN Epitaxial Planar Phototransistor Applications: Detector in electronic control and drive circuits Features: • Hermetically sealed case • Suitable for visible and near infrared
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5033/IEC
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BPW85C
Abstract: 416 npn phototransistor 8277 bpw 104 BPW85 BPW85A BPW85B Silicon NPN Phototransistor
Text: BPW85A, BPW85B, BPW85C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW85B,
BPW85C
2002/95/EC
2002/96/EC
BPW85
18-Jul-08
BPW85C
416 npn phototransistor
8277
bpw 104
BPW85A
BPW85B
Silicon NPN Phototransistor
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BPW-20R
Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200
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8239
Abstract: Vishay Telefunken Phototransistor BPW96 BPW96A BPW96B BPW96C
Text: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.
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D-74025
16-Nov-99
8239
Vishay Telefunken Phototransistor
BPW96A
BPW96B
BPW96C
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BPW85
Abstract: BPW85A BPW85B BPW85C Phototransistor bpw 80
Text: BPW85A, BPW85B, BPW85C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW85B,
BPW85C
2002/95/EC
2002/96/EC
BPW85
11-Mar-11
BPW85A
BPW85B
BPW85C
Phototransistor bpw 80
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near IR sensors with daylight filter
Abstract: luxmeter osram BPW20 photoconductive cells characteristic dc voltmeter circuit diagrams photodiode application luxmeter BPW 23 nf application luxmeter short distance measurement ir infrared diode luxmeter detector
Text: Vishay Semiconductors Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into
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w10MW)
near IR sensors with daylight filter
luxmeter osram
BPW20
photoconductive cells characteristic
dc voltmeter circuit diagrams
photodiode application luxmeter
BPW 23 nf
application luxmeter
short distance measurement ir infrared diode
luxmeter detector
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near IR sensors with daylight filter
Abstract: near IR photodiodes with daylight filter BPW 23 nf Telefunken Phototransistor photodiode application luxmeter Vishay Telefunken Phototransistor pin diodes radiation detector APPLICATION NOTE BpW34 photo voltaic cell BPW34 osram
Text: Vishay Telefunken Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into
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BPW96
Abstract: BPW96A BPW96B BPW96C
Text: BPW96 Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.
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BPW96
D-74025
15-Jul-96
BPW96A
BPW96B
BPW96C
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Untitled
Abstract: No abstract text available
Text: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.
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D-74025
16-Nov-99
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fototransistor BPW 39
Abstract: BPW21 photodetectors Q62702P945 SFH 3410 BPX 48 fototransistor
Text: SI-FOTODETEKTOREN SILICON PHOTODETECTORS 6. Fotodetektoren für spezielle Anwendungen Package Type ϕ Radiant sensitive area deg. mm2 6. Photodetectors for Special Applications IP IR VR = 10 V Sλ rel tr,tf (VR = 5 V) µA nA % µs 6.1 Blau-empfindliche Fotodiode
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Q62702-P945
Q62702-P1601
Q62702-P270
Q62702-P17-S1
Q62702-P305
fototransistor BPW 39
BPW21
photodetectors
Q62702P945
SFH 3410
BPX 48
fototransistor
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Untitled
Abstract: No abstract text available
Text: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.
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BPW96
D-74025
16-Nov-99
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