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    PHOTOTRANSISTOR BP 101 Search Results

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    Phototransistor bp 101

    Abstract: pin photodiode remote control bpy BPY61 rel photoelectric conversion Plastic Encapsulate Diodes phototransistor sensitive to red light silicon metal casing diode BPX62 transistor mm glass lens phototransistor
    Text: Silicon Photovoltaic Cells, Silicon Photodiodes and Phototransistors Appnote 16 Optoelectronic components are increasingly used in modern electronics. The main fields of application are light barriers for production control and safety devices, light control and regulating equipment like twilight switches, fire detectors and facilities


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    TAA761A

    Abstract: TDA4050B BPW32 TAA761 FLH101 TCA335A tda4050 TCA965 equivalent tca965 transistor bc238
    Text: Light Activated Switches Appnote 33 able and adjustable in its position an efficiency maximum can be achieved. Miniature Light Barrier for a Shaft Position Encoder or a Revolution Counter Figure 2. Miniature light barriers are required for shaft position encoders,


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    LD261 BPX81. TAA761A TDA4050B BPW32 TAA761 FLH101 TCA335A tda4050 TCA965 equivalent tca965 transistor bc238 PDF

    TRANSISTOR SMD MARKING CODE 3401

    Abstract: DIODE B-10 TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE r28 TRANSISTOR SMD MARKING CODE NM SFH4450 GEOY6969 SFH 4232 SFH 4740 702 transistor smd code
    Text: Infrared Components ge 88 - 92 107 108 Infrared Components Summary of Types Silicon Photodetectors For moreComponents Infrared detailed product Summary information of Types andSilicon technical Photodetectors datasheets, please visit http://catalog.osram-os.com


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    GEXY6713 TRANSISTOR SMD MARKING CODE 3401 DIODE B-10 TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE r28 TRANSISTOR SMD MARKING CODE NM SFH4450 GEOY6969 SFH 4232 SFH 4740 702 transistor smd code PDF

    TRANSISTOR SMD MARKING CODE 3401

    Abstract: Q65110A6342 TRANSISTOR SMD MARKING CODE 702 fototransistor BPW 39 SFH415U sidelooker smd DIODE transistor smd 3401 SFH 4740 LPT80 BPY62
    Text: Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden 107 Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden. 111


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    GEMY6050 TRANSISTOR SMD MARKING CODE 3401 Q65110A6342 TRANSISTOR SMD MARKING CODE 702 fototransistor BPW 39 SFH415U sidelooker smd DIODE transistor smd 3401 SFH 4740 LPT80 BPY62 PDF

    universal cell phone charger circuit diagram

    Abstract: schematic diagram of phone charger keihin cell phone adapter block diagram EPR-84 core EE13 transformer TDK Ferrite Core PC40 universal flyback transformer specification cell phone charger 103-270
    Text: Title Engineering Prototype Report for EP-84 <30 mW No-Load Consumption AC-DC Power Supply Using TNY264P TinySwitch -II Specification 85 VAC to 265 VAC Input, 5 V, 600 mA, 3 W Output Application Cell Phone Charger Author Power Integrations Application Department


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    EP-84 TNY264P 23-May-05 EN55022/CISPR22 universal cell phone charger circuit diagram schematic diagram of phone charger keihin cell phone adapter block diagram EPR-84 core EE13 transformer TDK Ferrite Core PC40 universal flyback transformer specification cell phone charger 103-270 PDF

    A New Detector for IR LED Light

    Abstract: Silicon Detector OSD5-5T GaAlAs detector IR photodiode 880 nm 850 nm LED RG830 Longwave laser ingaas LED IR photodiode 95w
    Text: A NEW DETECTOR FOR IRLED LIGHT As reprinted from SENSORS Magazine, December 1996 Issue A New Detector for IR LED Light A new GaAIAs processing technique has led to a wavelength-specific detector for 880 nm light that requires no signal modulation or optical filtering to eliminate


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    SNX-1380

    Abstract: HTB2-102-281 TNY277 equivalent TNY277 Santronics SNX 1380 TNY278 yw-360-02b YW-360-02B SNX-1380 LSPA20544 TNY279
    Text: Engineering Prototype Report for EP-91 – 12 W Power Supply using TinySwitch -III TNY278P Title Specification 85-265 VAC Input, 12 V, 1 A Output Application TinySwitch-III Reference Design (DAK-91) Author Power Integrations Applications Department Document


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    EP-91 TNY278P) DAK-91) EPR-91 7-February-06 flex89 SNX-1380 HTB2-102-281 TNY277 equivalent TNY277 Santronics SNX 1380 TNY278 yw-360-02b YW-360-02B SNX-1380 LSPA20544 TNY279 PDF

    RDR-91

    Abstract: Power Integrations TNY279PG yw-360-02b SNX-R1380
    Text: Title Reference Design Report for a 12 W Power Supply Using TinySwitchTM-III TNY278PG Specification 85-265 VAC Input, 12 V, 1 A Output Application TinySwitch-III Reference Design Author Applications Engineering Department Document Number RDR-91 Date February 11, 2013


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    TNY278PG RDR-91 RDR-91 Power Integrations TNY279PG yw-360-02b SNX-R1380 PDF

    HTB2-102-281

    Abstract: Epcos Ferrite Core Data book 2007 power supply dvd player LG TNY277PN k20s TNY278PN yw-360-02b EE25 transformer DVD player circuit diagram for lg TNY278
    Text: Engineering Prototype Report for RDK-91 –12 W Power Supply Using TinySwitch -III TNY278PN Title Specification 85-265 VAC Input, 12 V, 1 A Output Application TinySwitch-III Reference Design (RDK-91) Author Power Integrations Applications Department Document


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    RDK-91 TNY278PN) RDK-91) RDR-91 18-July-2007 flex89 HTB2-102-281 Epcos Ferrite Core Data book 2007 power supply dvd player LG TNY277PN k20s TNY278PN yw-360-02b EE25 transformer DVD player circuit diagram for lg TNY278 PDF

    HTB2-102-281

    Abstract: EE25 bobbin TNY278PN yw-360-02b EKMX401ELL220ML20S MOSFET 818 ln TNY278 DER-228 ee25 ferrite core TNY277
    Text: Design Example Report Title 15 W Power Supply with <30 mW No-load Input Power Using TinySwitch-III TNY278P Specification 85 VAC – 265 VAC Input; 12 V, 1.25 A Output Application TinySwitch-III Reference Design Author Applications Engineering Department


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    TNY278P) DER-228 HTB2-102-281 EE25 bobbin TNY278PN yw-360-02b EKMX401ELL220ML20S MOSFET 818 ln TNY278 DER-228 ee25 ferrite core TNY277 PDF

    cera-mite .1m 2kv

    Abstract: TOP233y B66311-G-X167 NTC Siemens m 822 transformer calculation UF3003 equivalent 1n4007 t7 schematic diagram 230VAC to 14VDC POWER SUPPLY 19372K SU10V-03100
    Text: Title Engineering Prototype Report EPR-00010 15W, Universal Input, Single Output, Isolated Converter with TOP233Y (EP-10) Recipients Application Battery Charger Author S. L. Date 14-November-2000 Abstract This document presents the specification, schematic & BOM, transformer calculation,


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    EPR-00010) OP233Y EP-10) 14-November-2000 EPR-00010 cera-mite .1m 2kv TOP233y B66311-G-X167 NTC Siemens m 822 transformer calculation UF3003 equivalent 1n4007 t7 schematic diagram 230VAC to 14VDC POWER SUPPLY 19372K SU10V-03100 PDF

    Photo diode TFK S 186 P

    Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
    Text: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission


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    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


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    10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 PDF

    60 SMD 5050 Ultra Bright LEDs

    Abstract: MMA 0204 HV - Professional
    Text: Vishay Intertechnology, Inc. One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components To view datasheets of the products contained in the Engineer’s Toolbox, please visit www.vishay.com/ref/et1 Alternative


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    VMN-MS6495-1011 60 SMD 5050 Ultra Bright LEDs MMA 0204 HV - Professional PDF

    Leader 8020 schematics Oscilloscope

    Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    vse-db0103-0810 Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s PDF

    Phototransistor bp 101

    Abstract: P781
    Text: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor BP 103 M aße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1130 nm


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    Q62702-P75 Q62702-P79-S1 Q62702-P79-S2 Q62702-P79-S4 62702-P781 /PCe//PCE25° 11III Phototransistor bp 101 P781 PDF

    Phototransistor bp 101

    Abstract: BP103 siemens
    Text: SIEM ENS BP 103 fet06017 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. W esentliche M erkmale Features • • • • Speziell geeignet für Anwendungen im


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    Phototransistor bp 101

    Abstract: SFH300 siemens SFH nm Q62702-P1057 Q62702-P1058 Q62702-P1189 Q62702-P1192 Q62702-P1193 Q62702-P85-S2 Q62702-P85-S3
    Text: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 300 SFH 300 FA Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1130 nm SFH 300


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    GE006652 /CE0250 0HF01593 Phototransistor bp 101 SFH300 siemens SFH nm Q62702-P1057 Q62702-P1058 Q62702-P1189 Q62702-P1192 Q62702-P1193 Q62702-P85-S2 Q62702-P85-S3 PDF

    Phototransistor bp 101

    Abstract: UAA 180 RED Color band DIODES UAA 180 A uaa180 tca 761 UAA 761 A TDA 1047 P-DIP-18 Q67000-A1104
    Text: S IE M E N S LED Driver for Light Band Displays UAA 180 Bipolar IC Integrated circuit for driving 12 light emitting diodes. Corresponding to the input voltage, LEDs forming a light band are controlled sim ilar to a thermometer scale. By using an appropriate circuitry the brightness of the LEDs can be varied and the light


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    Q67000-A1104 P-DIP-18 Phototransistor bp 101 UAA 180 RED Color band DIODES UAA 180 A uaa180 tca 761 UAA 761 A TDA 1047 P-DIP-18 PDF

    Phototransistor bp 101

    Abstract: uaa180 UAA 180 UAA 180 A TDA1046
    Text: SIEMENS LED Driver for Light Band Displays UAA 180 Bipolar IC Integrated circuit for driving 12 light emitting diodes. Corresponding to the input voltage, LEDs forming a light band are controlled similar to a therm om eter scale. By using an appropriate circuitry the brightness of the LEDs can be varied and the light


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    UAA180 67000-A1104 P-DIP-18 Phototransistor bp 101 uaa180 UAA 180 UAA 180 A TDA1046 PDF

    UAA180

    Abstract: UAA 180 Linear Thermometer ic UAA180 Phototransistor bp 101 TDA1046 LD461 tca 761 DIODE BP TDA 1047 TDA1047
    Text: SIEMENS LED Driver for Light Band Displays UAA 180 Bipolar IC Integrated circuit for driving 12 light emitting diodes. Corresponding to the input voltage, LEDs forming a light band are controlled similar to a thermometer scale. By using an appropriate circuitry the brightness of the LEDs can be varied and the light


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    Q67000-A1104 P-DIP-18 UAA180 UAA180 UAA 180 Linear Thermometer ic UAA180 Phototransistor bp 101 TDA1046 LD461 tca 761 DIODE BP TDA 1047 TDA1047 PDF

    UAA 170

    Abstract: a940 Phototransistor bp 101 Phototransistor L14 UAA170 VU-METER Q67000-A940 Q67000.A940 UAA 170 16 spot phototransistor AV12
    Text: S IE M E N S LED Driver for Light Spot Displays UAA 170 Bipolar IC IC for driving 16 light emitting diodes. Depending on the input voltage, the individual LEDs are driven within one row in form of a light spot. The UAA 170 provides a linear relation between control voltage and the driven LED.


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    Q67000-A940 P-DIP-16 AV12/13 AV12/13 UAA 170 a940 Phototransistor bp 101 Phototransistor L14 UAA170 VU-METER Q67000.A940 UAA 170 16 spot phototransistor AV12 PDF

    BP101

    Abstract: ZMX140 Transistor BPX25 Phototransistor bp 101 BPX25 ZM100 BPX29 ZM110 ZMX131 ZMX150
    Text: SILICON PLANAR PHOTO-TRANSISTORS and GaAs L.E.Ds In electro-optical design involving photo-transistors and light emitting diodes the package is an important factor. The device package determines the circuit complexity, system sensitivity, size, channel to channel isolation where arrays are concerned


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    ZM100 ZQ/IX130 ZME60* ZME140f ZME150Ã ZME60 fZME140 tfME150 BP101 ZMX140 Transistor BPX25 Phototransistor bp 101 BPX25 BPX29 ZM110 ZMX131 ZMX150 PDF

    led 7 segment anode TIL 702

    Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
    Text: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9


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    10x10 led 7 segment anode TIL 702 trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150 PDF