TEMIC S289P
Abstract: S289P Telefunken Phototransistor
Text: S289P Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters with lp >850nm. A plastic
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S289P
S289P
850nm.
D-74025
15-Jul-96
TEMIC S289P
Telefunken Phototransistor
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ic 8253
Abstract: phototransistor, 850nm TEKT5400 8239 TEKT5400S TSKS5400S
Text: TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor Description TEKT5400S is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package.A small recessed lens provides a high sensitivity in a low profile case.
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TEKT5400S
TEKT5400S
850nm
TSKS5400S
D-74025
ic 8253
phototransistor, 850nm
TEKT5400
8239
TSKS5400S
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Untitled
Abstract: No abstract text available
Text: TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor Description TEKT5400S is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package.A small recessed lens provides a high sensitivity in a low profile case.
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TEKT5400S
TEKT5400S
850nm
TSKS5400S
D-74025
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Untitled
Abstract: No abstract text available
Text: S289P Vishay Telefunken Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally
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Original
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S289P
S289P
850nm.
D-74025
20-May-99
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PDF
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S289P
Abstract: phototransistor, 850nm
Text: S289P Vishay Semiconductors Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally
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Original
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S289P
S289P
850nm.
D-74025
20-May-99
phototransistor, 850nm
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PDF
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S289P
Abstract: Telefunken Phototransistor
Text: S289P Vishay Telefunken Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally
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Original
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S289P
S289P
850nm.
D-74025
20-May-99
Telefunken Phototransistor
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PDF
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S289P
Abstract: Telefunken Phototransistor
Text: S289P Vishay Telefunken Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally
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Original
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S289P
S289P
850nm.
D-74025
20-May-99
Telefunken Phototransistor
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PDF
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phototransistor no s289p
Abstract: S289P s289
Text: S289P Vishay Semiconductors Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally
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S289P
S289P
850nm.
18-Jul-08
phototransistor no s289p
s289
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phototransistor no s289p
Abstract: S289P
Text: S289P Vishay Semiconductors Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally
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Original
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S289P
S289P
850nm.
08-Apr-05
phototransistor no s289p
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lens emitter phototransistor
Abstract: No abstract text available
Text: S 289 P TELEFUNKEN Semiconductors Silicon Darlington Phototransistor Description S 289 P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally
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850nm.
D-74025
lens emitter phototransistor
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PDF
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MID-14H22
Abstract: No abstract text available
Text: SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR MID-14H22 Description Package Dimensions Unit: mm inches The MID-14H22 is a NPN silicon phototransistor mounted in a lensed ,black plastic and side looking package. 4.00 ± .08 (.158±.003) 1.22 .048 4.12 (.162) Features
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MID-14H22
MID-14H22
850nm
30MIN
00MIN
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8239
Abstract: 8257 ic 8255 phototransistor, 850nm S350P
Text: S350P Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable
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S350P
S350P
850nm.
D-74025
15-Jul-96
8239
8257
ic 8255
phototransistor, 850nm
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30H22
Abstract: MID-30H22
Text: T-1 PACKAGE NPN PHOTOTRANSISTOR Description MID-30H22 Package Dimensions The MID-30H22 is a NPN silicon phototransistor mou- Unit : mm inches nted in a lensed , special dark plastic package.The lens- ψ3.00 (.118) ing effect of the package allows an acceptance half view
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MID-30H22
MID-30H22
40MIN
00MIN
850nm)
30H22
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MID-40H22
Abstract: phototransistor, 850nm
Text: TO-46 PACKAGE NPN PHOTOTRANSISTOR MID-40H22 Description Package Dimensions The MID-40H22 is a NPN silicon phototransistor mounted in a lensed, special dark plastic package. Unit :mm inches 4.75 (.187) 45° 5.80 (.228) Features l l l l l COLLECTOR INDICATOR
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MID-40H22
MID-40H22
00MIN
phototransistor, 850nm
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8239
Abstract: S350P of ic 8255
Text: S350P Vishay Telefunken Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are easily
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S350P
S350P
850nm.
D-74025
20-May-99
8239
of ic 8255
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PDF
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Untitled
Abstract: No abstract text available
Text: S350P Vishay Telefunken Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are easily
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S350P
S350P
850nm.
D-74025
20-May-99
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PDF
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S350P
Abstract: ic 8255 phototransistor, 850nm
Text: S350P Vishay Telefunken Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are easily
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S350P
S350P
850nm.
D-74025
20-May-99
ic 8255
phototransistor, 850nm
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PDF
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ic 8255
Abstract: S350P
Text: TELEFUNKEN Semiconductors S 350 P Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are
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S350P
850nm.
D-74025
ic 8255
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PDF
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Untitled
Abstract: No abstract text available
Text: _ S289P w m m f _ ▼ Vishay Telefunken Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epi taxial planar Darlington phototransistor in a standard T-1 0 3 mm package. The epoxy package itself is an IR filter, spectrally
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OCR Scan
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S289P
S289P
850nm.
20-May-99
S289P_
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PDF
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Untitled
Abstract: No abstract text available
Text: S350P Vishay Semiconductors Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are easily
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S350P
S350P
850nm.
08-Apr-05
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PDF
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MID-33H22
Abstract: No abstract text available
Text: T-1 PACKAGE NPN PHOTOTRANSISTOR Description MID-33H22 Package Dimensions The MID-33H22 is a NPN silicon phototransistor mou- Unit: mm inches nted in a lensed, special dark plastic package. The lens- ψ3.00 (.118 ing effect of the package allows an acceptance half view
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MID-33H22
MID-33H22
40MIN.
00MIN
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8239
Abstract: 8257 ic 8255 IC 8256 S350P
Text: S350P Vishay Semiconductors Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are easily
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Original
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S350P
S350P
850nm.
18-Jul-08
8239
8257
ic 8255
IC 8256
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PDF
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S350P
Abstract: No abstract text available
Text: S350P Vishay Telefunken Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are easily
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Original
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S350P
S350P
850nm.
D-74025
20-May-99
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PDF
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BPW78
Abstract: BPW78A BPW78B bpw 104
Text: BPW78 Silicon NPN Phototransistor Description BPW78 is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package. A small recessed lens provides a high sensitivity in a low profile case. The epoxy package itself is an IR filter, spectrally
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BPW78
BPW78
850nm)
D-74025
15-Jul-96
BPW78A
BPW78B
bpw 104
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PDF
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