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    PHOTOSENSITIVE Search Results

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    Vishay Intertechnologies 6N136

    High Speed Optocouplers HS Phototransistor
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    TTI 6N136 Tube 61,950 50
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    TT Electronics plc OPB732WZ

    Optical Switches, Reflective, Phototransistor Output Reflective Sensor
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    TTI OPB732WZ Bulk 15,450 25
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    TT Electronics plc OP133

    Infrared Emitters High Intensity 935nm
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    TTI OP133 Bulk 12,850 50
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    Vishay Intertechnologies 4N36

    Transistor Output Optocouplers Phototransistor Out
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    TTI 4N36 Tube 8,150 50
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    TT Electronics plc OPB700ALZ

    Optical Switches, Reflective, Phototransistor Output Output Phototranstr Input Diode
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    TTI OPB700ALZ Bulk 6,472 1
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    PHOTOSENSITIVE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity BPW 34 B Cathode marking spacing ' Photosensitive area 2.65 mm X 2.65 mm Approx. weight 0.1 g GE006643 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified


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    GE006643 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Daylight-Cutoff Filter Reverse Gullwing Photosensitive area 2.65 mm x 2.65 mm BPW 34 FS (E9087) en Cathode lead CD O GEO06916 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.


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    E9087) GEO06916 E9087: PDF

    S9032-02

    Abstract: photodiode s9032-02 green light photodiode sensor photo ic S11012-01CR
    Text: Si photodiode S9032-02 RGB color sensor The S9032-02 is a color sensor molded into a plastic package having a 3-channel RGB photodiode sensitive to the blue (λp=460 nm), green (λp=540 nm) and red (λp=620 nm) regions of the spectrum. The S9032-02 has a 3-segment (RGB) circular photosensitive area of φ2 mm.


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    S9032-02 S9032-02 SE-171 KSPD1067E07 photodiode s9032-02 green light photodiode sensor photo ic S11012-01CR PDF

    s10917-35gt

    Abstract: 35GT s10917 LX 590 PF
    Text: Si photodiode S10917-35GT RGB color sensor integrated in small and thin package The S10917-35GT is a compact color sensor with a 3-channel photodiode mounted in one package, and sensitive to red λ=590 to 680 nm , green (λ=470 to 600 nm) and blue (λ=390 to 530 nm) light. An infrared-cut filter is formed on the photosensitive


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    S10917-35GT S10917-35GT SE-171 KSPD1078E05 35GT s10917 LX 590 PF PDF

    EUDYNA

    Abstract: STM-16
    Text: FID3Z2KX/LX PIN Photodiode FEATURES KX • Data rates up to 2.5 Gb/s • High Quantum Efficiency: 0.8A/W at 1,310nm • Low dark current: 0.1nA • Photosensitive area: 50µm diameter • Wide spectral response range: 900nm to 1,600nm APPLICATIONS • Optical transmission system: STM-1 OC-3 ,


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    310nm 900nm 600nm OC-12) STM-16 OC-48) 310nm 550nm EUDYNA STM-16 PDF

    quadrant photodiode rca

    Abstract: No abstract text available
    Text: E 6 & 6/CANAD A/O PTOELEK ID 303Dbl0 GDQ0143 IME « C A N A D ÆM Electro n • I v i I Photodiode C30927E DATA SHEET Optics % Quadrant Silicon Avalanche Photodiodes for Tracking Applications Optical Characteristics Full Angle for Totally illuminated Photosensitive S u r fa c e .


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    303Dbl0 GDQ0143 C30927E C30927E-03 C30927E-02 C30927E-01 VP-104 C30927E-01, C30927E-02, C30927E-03 quadrant photodiode rca PDF

    150AVP

    Abstract: caesium 56AVP Photocathode 56DUVP 150CVP 150UVP 56TVP 56TUVP XP1017
    Text: Photosensitive devices photomultipliers Type No. book 2 part 3 Photocathode Diameter Surface mm Description Av. A nod e Sensitivity Sensitivity at Vb (A/lm) <kV) Cathode Sensitivity No. of Stages (/iA/lm) Time Characteristic Rise Time (ns) 250 1.8 65 10


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    XP1110 XP1116 XP1117 15QUVP 150AVP 150CVP XP1016 XP1017 56AVP caesium Photocathode 56DUVP 150UVP 56TVP 56TUVP PDF

    G1125-02

    Abstract: S2216 02 S1863 G1126-02
    Text: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length


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    00G2534 254nm 560nm 633nm G1125-02 G1126-02 G1127-02 G2119 G1745 G1746 S2216 02 S1863 PDF

    Untitled

    Abstract: No abstract text available
    Text: MPPC modules C11202 series Single pixel photon counting module for low-light-level detection The C11202 series is a single-photon counting module capable of detecting low light levels. The C11202 series is made up of a single-pixel thermoelectrically cooled MPPC, a signal amplifier circuit, a comparator circuit, a high-voltage power supply circuit, and a temperature control circuit. The photosensitive area is available in two sizes of ϕ50 m and ϕ100 μm, and


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    C11202 B1201, KACC1207E03 PDF

    Selection guide

    Abstract: Photo IC S10604 S11059-01WT
    Text: Selection guide - March 2015 Photo IC Sophisticated sensors integrated with photosensitive element and signal processing circuit HAMAMATSU PHOTONICS K.K. Photo IC The photo IC is a light receiver element with various functions. It integrates a photosensitive element and a signal processing circuit into one package.


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    B1201, KPIC0001E08 Selection guide Photo IC S10604 S11059-01WT PDF

    LM 012/14

    Abstract: No abstract text available
    Text: Head-on PMT Photosensor Modules H10493 Series The H10493 series photosensor modules incorporate a 28 mm 1-1/8" diameter head-on photomultiplier tube, a high voltage power supply, and a low noise amplifier. Since it has a wide photosensitive area of 25 mm diameter,


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    H10493 H10493-001 H10493-011 H10493-002 H10493-012 H10493-003 H10493-013 TPMOC0230EA AWG26 LM 012/14 PDF

    Untitled

    Abstract: No abstract text available
    Text: ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs Ultrafast response of several tens picosecond FEATURES Ultrafast response *1 tr , tf = 30 ps (Typ.) Low dark current 100 pA (Ta=25 °C) Large photosensitive area 200 mm *1: Values excluding response time of light source, bias tee, assembly circuit,


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    G4176 G4176-03 G4176-01 G4176-03 SE-164 LPRD1022E05 PDF

    49/S12572-050C

    Abstract: No abstract text available
    Text: MPPC multi-pixel photon counter S12572-025, -050,-100C/P Low afterpulse, for general measurement Photosensitive area: 3 x 3 mm The S12572 series are general-purpose MPPC with drastically reduced afterpulses compared to our previously marketed products. By widening the operating voltage range and improving the time resolution and photon detection efficiency, the


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    S12572-025, -100C/P S12572 B1201, KAPD1043E03 49/S12572-050C PDF

    BPX92

    Abstract: Bpx 95 photodetector 850 nm aa3b
    Text: SIEMENS BPX92 SILICO N PHOTODIODE Package D im ensions in Inches mm Chip position FEATURES * Silicon Planar Photodiode * Transparent Plastic C a se Photosensitive area 051 x 031 (1 3 x 8) ' * 0.2* (S.08 mm) Lead Sp ac in g 0 1 6 (4 ) 006 ( 2) • Low D ark Current, 1 n A


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    BPX92 BPX92 Bpx 95 photodetector 850 nm aa3b PDF

    4502 C

    Abstract: 1500-nm
    Text: Large Area InGaAs p-i-n Photodiode Sheet 1 of 3 35PD500-TO The 35PD500-TO, an InGaAs photodiode with a 500um-diameter photosensitive packaged in a TO-46 header, is a versatile device with applications in high sensitivity instrumentation, laser back-facet monitoring, and low-bit-rate telecomm and datacomm transmission. Planar semiconductor design and


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    35PD500-TO 35PD500-TO, 500um-diameter 4502 C 1500-nm PDF

    hamamatsu S875

    Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
    Text: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out­ line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size


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    560nm 633nm 930nm S2386 S2386-18K S1133-01, S1133-11, S1087-01, G1118, G1738 hamamatsu S875 S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133 PDF

    GEO06861

    Abstract: Q62702-P1605
    Text: Neu: Silizium-PIN-Fotodiode New: Silicon PIN Photodiode 1.1 0.9 6.7 6.2 0.5 ˚ 0.2 0.1 0.0.1 0.3 1.2 1.1 Chip position BP 104 S 4.0 3.7 1.7 1.5 0.9 0.7 4.5 4.3 1.6 ±0.2 Cathode lead feo06862 Photosensitive area 2.20 mm x 2.20 mm GEO06861 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.


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    feo06862 GEO06861 OHF02284 OHF01778 OHF00082 OHF01402 GEO06861 Q62702-P1605 PDF

    RPM6933

    Abstract: No abstract text available
    Text: Communication ICs Remote control photosensitive 1C RPM6900 Series The RPM6900 series are remote control photosensitive units in a compact, lightweight package made from a resin mold. Applications RPM6900 series models VCRs, TVs, movies, air conditioners, audio equipment,


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    RPM6900 RPM6933 RPM6933-V4 RPM6936 RPM6936-V4 RPM6937 RPM6937-V4 RPM6938 RPM6933 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 1 13PD75-ST, -SMA, -FC, -SC The 13PD75-ST, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO-46 header and aligned in an AT&T ST active device mount, is intended for high speed and low noise


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    13PD75-ST, 1300nm PDF

    InGaAs photodiode TO-46

    Abstract: No abstract text available
    Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD75-TO The 13PD75-TO, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO-46 header, is intended for high speed and low noise applications. The diameter of the photosensitive region is


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    13PD75-TO 13PD75-TO, InGaAs photodiode TO-46 PDF

    Untitled

    Abstract: No abstract text available
    Text: RPM-600CBR series Remote controlled photosensitive IC This small size single-chip lightweight molded 1C is used to detect light from a remote source. It is molded in plastic. Dimensions Units : mm RPM-600CBR-L Features (l)(2)(3 ) • compact and light plastic package


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    RPM-600CBR RPM-600CBR-L RPM-630-S RPM-633-S RPM-637-S RPM-638-S RPM-640-S RPM-600CBR-S 001D3S5 PDF

    C4674-01

    Abstract: S5990-01 S5991-01
    Text: Two-dimensional PSD S5990-01, S5991-01 Improved tetra-lateral type for surface mounting Features Applications Large photosensitive area S5990-01: 4 x 4 mm S5991-01: 9 × 9 mm Light spot detection Pointing device computer mouse, track-ball Position measurement


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    S5990-01, S5991-01 S5990-01: S5991-01: C4674-01 KPSD1010E05 C4674-01 S5990-01 S5991-01 PDF

    InGaAs pin photodiode 1Ghz

    Abstract: TELCOM 13PD100-TO
    Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD100-TO The 13PD100-TO, an InGaAs photodiode with a 100µm-diameter photosensitive region and packaged in a TO-46 header, is the largest standard device enabling a 1GHz frequency cutoff. Planar semiconductor


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    13PD100-TO 13PD100-TO, InGaAs pin photodiode 1Ghz TELCOM 13PD100-TO PDF

    photodiode responsivity 1550nm 2

    Abstract: TO-5 header 1550nm photodiode Photodiode, TO-5 Photodiode, 1550nm 1300nm-1550nm InGaAs Photodiode 1550nm
    Text: Large Area InGaAs p-i-n Photodiode 35PD2M-TO The 35PD2M-TO, an InGaAs photodiode with a 2mm-diameter photosensitive region and packaged in a TO-5 header, is designed for applications in high sensitivity instrumentation and sensing. Low dark current and high dynamic impedance are featured. Reliability is assured by


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    35PD2M-TO 35PD2M-TO, 1300nm 1550nm -40oC 250oC photodiode responsivity 1550nm 2 TO-5 header 1550nm photodiode Photodiode, TO-5 Photodiode, 1550nm 1300nm-1550nm InGaAs Photodiode 1550nm PDF