NTE3102
Abstract: No abstract text available
Text: NTE3102 Photon Coupled Interrupter Module NPN Transistor Description: The NTE3102 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical
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NTE3102
NTE3102
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NTE3103
Abstract: No abstract text available
Text: NTE3103 Photon Coupled Interrupter Module NPN Darlington Description: The NTE3103 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon Darlington connected phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. The
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NTE3103
NTE3103
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Untitled
Abstract: No abstract text available
Text: NTE3101 Photon Coupled Interrupter Module NPN Darlington Output Description: The NTE3101 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon Darlington connected phototransistor in a plastic housing. The package system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. The
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NTE3101
NTE3101
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NTE3101
Abstract: No abstract text available
Text: NTE3101 Photon Coupled Interrupter Module NPN Darlington Output Description: The NTE3101 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon Darlington connected phototransistor in a plastic housing. The package system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. The
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NTE3101
NTE3101
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S10 diode
Abstract: IS813
Text: IS813 S10/S7/S5/S3: Photon Coupled Interrupter, 4 Pin Transistor, Fast Switching Datasheet ISOCOM LTD: BSI9000 and CECC20000 Approved Manufacturer Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England Email: enquiry@isocomoptocouplers.com - Tel: +44 (0)191 4166546 - Fax: +44 (0)191 4155055
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IS813
S10/S7/S5/S3:
BSI9000
CECC20000
S10/S7/S5/S
IS813S10
IS813S7
IS813S5
IS813S3
S10 diode
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NTE3100
Abstract: No abstract text available
Text: NTE3100 Photon Coupled Interrupter Module Description: The NTE3100 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon phototransistor on a plastic housing. The package system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an “ON”
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NTE3100
NTE3100
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photo transistor til 78
Abstract: CNY36 vam8
Text: E SOLID STATE Dl ]>E|3fl?SQfll 0pnfl44 0 | Optoelectronic Specifications T *^ I -7 3 Photon Coupled Interrupter Module CNY36 The GE Solid State CNY36 is a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a plastic housing. The
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CNY36
CNY36
photo transistor til 78
vam8
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m150 diode
Abstract: 100MS CNY28 M150 ambient phototransistor
Text: G E SOLID STATE öl OOnöSti DEJ3Ö750Ö1 ^ g Optoelectronic Specifications. ~ ~ * : 41-13 Photon Coupled Interrupter Module CN Y28 The GE Solid State CNY28 is a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a plastic housing. The
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T-4/-73
CNY28
CNY28
-25-IF
m150 diode
100MS
M150
ambient phototransistor
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H22B1
Abstract: H22B2 H22B3
Text: SOLID STATE 01 DE§3fl750fil D I Optoelectronic Specifications T-41-73 1mm Aperture Photon Coupled Interrupter Module H22B1 ,H22B2 ,H22B3 The GE Solid State H22B Interrupter Module is a gallium arse nide infrared emitting diode coupled to a silicon darlington con
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3fl750fil
T-41-73
H22B1
H22B2
H22B3
-25-C
H22B2
H22B3
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PPT Diode specifications
Abstract: PHOTO TRANSISTOR ppt CNY29
Text: SOLID STATE □1 D E |3 fl? 50fll D 0na2fl 2 | "T-4/-7 3 Optoelectronic Specifications , Photon Coupled Interrupter Module C N Y29 The GE Solid State CNY29 is a gallium arsenide infrared emitting diode coupled with a silicon photo-darlington in a plastic housing.
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CNY29
CNY29
PPT Diode specifications
PHOTO TRANSISTOR ppt
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H21A
Abstract: H21A4 H21A5 H21A6 s5c diode
Text: SOL I D S TATE 01 »E 3Ö7S0Ö1 D0n?a5 Optoelectronic Specifications f - H 1-7 3 1mm Aperture Photon Coupled Interrupter Module H21A4,H21A5,H21A6 The GE Solid State H21A Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon phototransistor in a
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H21A4
H21A5
H21A6
H21A
H21A6
s5c diode
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GE H21A1
Abstract: h21a io 49
Text: G E SOLID STATE □1 DE I 3 0 7 5 0 0 1 0011760 Optoelectronic Specifications T-Ml-73 1mm Aperture Photon Coupled Interrupter Module H21A1,H21A2,H21A3 The GE Solid State H21A Interrupter Module is a gallium arse nide infrared emitting diode coupled to a silicon phototransistor in
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T-Ml-73
H21A1
H21A2
H21A3
H21A1,
H21A2,
GE H21A1
h21a io 49
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diode C20M
Abstract: C20m diode, TO SL394 H22L2 photo diode tk 69 UFF 100 02 c20m H22L H22L1 ir tk 69
Text: G E SOLID STATE 01 DE|3a?5Qfll QOnTTfl fl | Optoelectronic Specifications. T - m 1mm Aperture Photon Coupled Interrupter Module H22L1,H22L2{ INCH MILLIMETERS SYMBOL MIN. T he G E Solid State H22L series is a gallium arsenide, infrared emitting diode coupled to a high speed integrated circuit detector. The
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H22L1
H22L2|
Ta-25Â
100Hz
diode C20M
C20m diode, TO
SL394
H22L2
photo diode tk 69
UFF 100 02
c20m
H22L
ir tk 69
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H22B4
Abstract: H22B5 H22B6 H22B CEUS
Text: G E SOLI» STATE DE 1 3fl7S0fll 01 4 | Optoelectronic Specifications. T - V / - 7 J 1mm Aperture Photon Coupled Interrupter Module H22B4,H22B5,H22B6 T he G E Solid State H22B Interrupter M odule is a gallium arse nide infrared emitting diode coupled to a silicon darlington con
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H22B4
H22B5
H22B6
750li
H22B6
H22B
CEUS
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H21B
Abstract: H21B1 H21B2 H21B3
Text: E SOLI» □1 STATE D E | 3 A 7 5 0 a i □01c17a4 fi | •— I v c w nr k/ Optoelectronic Specifications. 1mm Aperture Photon Coupled Interrupter Module H21B1,H21B2,H21B3 The GE Solid State H21B Interrupter Module is a gallium arse nide infrared emitting diode coupled to a silicon darlington con
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3A750ai
01c17a4
H21B1
H21B2
H21B3
RL-750fl
H21B
H21B3
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H22A
Abstract: H22A4 H22A5 H22A6
Text: G E SOLI» STATE 01 DE J 3Ô7S0Û1 001^712 7 | Optoelectronic Specifications T -4 1 -7 3 1mm Aperture Photon Coupled Interrupter Module H22A4 ,H 2 2 A 5 , H22A6 The GE Solid State H22A Interrupter Module is a gallium arse nide infrared emitting diode coupled to a silicon phototransistor in
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50fli
H22A4
H22A5
H22A6
Vce-45V
H22A
H22A4
H22A5
H22A6
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GE H21A1
Abstract: H21A1 H21A H21A2 H21A3
Text: G E SO LID STATE □1 DE I 3 0 7 5 0 0 1 0011760 Optoelectronic Specifications T-M l-73 1mm Aperture Photon Coupled Interrupter Module H21A1,H21A2,H21A3 T he G E Solid State H21A Interrupter M odule is a gallium arse nide infrared emitting diode coupled to a silicon phototransistor in
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-r-m-73
H21A1
H21A2
H21A3
100/is
GE H21A1
H21A
H21A3
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CNY37
Abstract: CNY 50 cny 37 cny 85 CNY36 172126 CNY photon coupled interrupter LUMINESZENZDIODE
Text: CNY 36 • CNY 37 Optoelektronischer Gabelkoppler Photon coupled interrupter modules Aufbau Em itter: GaAs Lum ineszenzdiode Construction Detektor: Silizium -NPN-Epitaxial-Planar-Fototransistor Anwendungen: O pto ele ktro n isch e Abtast- und Schalteinrichtung z. B. fü r Farbm askenerkennung,
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rL520pF
CNY37
CNY 50
cny 37
cny 85
CNY36
172126
CNY photon coupled interrupter
LUMINESZENZDIODE
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CS05S
Abstract: No abstract text available
Text: G E SOLID S TA TE 01 D E|3fl75001 0011710 Optoelectronic Specifications T -V /-7 3 1mm Aperture Photon Coupled Interrupter Module H22A1,H22A2,H22A3 T h e G E Solid S tate H 22A Interru p ter M odule is a gallium arse nide infrared em itting diode coupled to a silicon p h o totransistor in
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3fl75001
H22A1
H22A2
H22A3
CS05S
H22A1,
H22A2,
H22A3
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E 19826 D Optoelectronic Specifications. T-m-13 HARRIS SEMI COND SECTOR 37E D H 4302271 0027200 1 MHAS Photon Coupled Interrupter Module C N Y 28 T he G E Solid S tate CNY28 is a gallium arsenide infrared em itting diode coupled w ith a silicon p h o to tran sisto r in a plastic housing. T he
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T-m-13
CNY28
92CS-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E 19844 D Optoelectronic Specifications HARRI S SEMICOND 3 7E SECTOR •4305271 D Photon Coupled Interrupter Module C N Y 3 6 T he G E Solid S ta te C N Y36 is a gallium arsenide infrared em itting diode coupled w ith a silicon p h o to tran sisto r in a plastic housing. T he
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QG5730b
92CS-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E Optoelectronic Specifications 19828 T -4 /-7 3 HARRIS SEMICOND SECTOR 37E D Bi 43Q 2271 OCISVaSO T Photon Coupled Interrupter Module C N Y 2 9 •HAS t T he G E Solid S ta te C N Y29 is a gallium arsenide infrared em itting diode coupled w ith a silicon photo-darlington in a plastic housing.
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92CS-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: 3875081 G E S O L ID STATE 01E 19782 Optoelectronic Specifications_ HARRIS SE MI COND SECTOR 37E T> -r-M 1-7 3 I 4302271 0027244 3 HHAS 1m m Aperture Photon Coupled Interrupter Module H 21A 4,H 21A 5,H 21A 6 The GE Solid State H21A Interrupter Module is agallium arsenide
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92CS-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: 3875081 G E S O L ID 01E STATE 19 79 4 Optoelectronic Specifications _ H A RR IS SEMICOND SECTOR 37E T -4 1 -7 3 D 4302271 002725b 1mm Aperture Photon Coupled Interrupter Module H22B1 ,H22B2 ,H22B3 T he G E Solid S tate H22B In terru p ter M odule is a gallium arse
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002725b
H22B1
H22B2
H22B3
S-42662
92CS-429S1
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