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    PHOTODIODES MITSUBISHI Search Results

    PHOTODIODES MITSUBISHI Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    OPT301M Texas Instruments Integrated Photodiode and Amplifier In Hermetically Sealed Package 8-TO -55 to 125 Visit Texas Instruments Buy
    OPT101P-JG4 Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 Visit Texas Instruments Buy
    OPT101P-J Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 Visit Texas Instruments Buy
    OPT101PG4 Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 Visit Texas Instruments Buy
    OPT101P Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 Visit Texas Instruments Buy

    PHOTODIODES MITSUBISHI Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    avalanche 1550nm photodiode 5 Ghz

    Abstract: Photo Diodes 1550nm photodiode 5 Ghz PD893E6 mitsubishi receiver InGaAs Photodiode 1550nm mitsubishi avalanche photodiode ingaas ghz
    Text: MITSUBISHI PHOTO DIODES PD8XX6 SERIES InGaAs AVALANCHE PHOTO DIODES PD893E6 Feature DESCRIPTION PD8XX6 Series are InGaAs avalanche photodiodes which has a sensitive area of φ20µm. PD8XX6 is suitable for receiving the light having a wavelength band of 1200 to 1580nm.


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    PD893E6 1580nm. 1580nm avalanche 1550nm photodiode 5 Ghz Photo Diodes 1550nm photodiode 5 Ghz PD893E6 mitsubishi receiver InGaAs Photodiode 1550nm mitsubishi avalanche photodiode ingaas ghz PDF

    PD8042

    Abstract: PD893D2 PD8932 PD893D
    Text: MITSUBISHI PHOTO DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES PD8042, PD8932, PD893D2 Feature DESCRIPTION PD8XX2 Series are InGaAs avalanche photodiodes which has a sensitive area of φ50µm. PD8XX2 is suitable for receiving the light having a wavelength band of 1000 to 1600nm.


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    PD8042, PD8932, PD893D2 1600nm. 1600nm PD8042 PD8932 PD8042 PD893D2 PD8932 PD893D PDF

    Photo Diodes

    Abstract: tia amplifier ghz PD739C13 mitsubishi receiver
    Text: MITSUBISHI PHOTO DIODES PD739C13 InGaAs PIN PHOTO DIODES PD739C13 Feature DESCRIPTION PD739C13 is a φ20µm InGaAs pin photodiodes with Trans-Impedance Amplifier TIA . This PD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical


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    PD739C13 PD739C13 488G/s, 180um Photo Diodes tia amplifier ghz mitsubishi receiver PDF

    PD8043

    Abstract: avalanche 1550nm photodiode 5 Ghz 1550nm photodiode 2 Ghz PD8933 PD893D3 InGaAs Photodiode 1550nm avalanche photodiode ingaas ghz
    Text: MITSUBISHI PHOTO DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES PD8043, PD8933, PD893D3 Feature DESCRIPTION PD8XX3 Series are InGaAs avalanche photodiodes which has a sensitive area of φ35µm. PD8XX3 is suitable for receiving the light having a wavelength band of 1000 to 1600nm.


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    PD8043, PD8933, PD893D3 1600nm. 1600nm PD8043 avalanche 1550nm photodiode 5 Ghz 1550nm photodiode 2 Ghz PD8933 PD893D3 InGaAs Photodiode 1550nm avalanche photodiode ingaas ghz PDF

    Photo Diodes

    Abstract: PD739A13 TIA AGC application note tia amplifier ghz TIA application note mitsubishi receiver pin photo diodes
    Text: MITSUBISHI PHOTO DIODES PD739A13 InGaAs PIN PHOTO DIODES PD739A13 Feature DESCRIPTION PD739A13 is a φ20µm InGaAs pin photodiodes with Trans-Impedance Amplifier TIA . This PD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical


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    PD739A13 PD739A13 10MHz-1 488G/s, 180um Photo Diodes TIA AGC application note tia amplifier ghz TIA application note mitsubishi receiver pin photo diodes PDF

    1300nm

    Abstract: PD793D26 PD7XX26 PIN 1300nm pin photo diodes
    Text: MITSUBISHI PHOTO DIODES PD7XX26 SERIES InGaAs PIN PHOTO DIODES PD793D26 Feature DESCRIPTION PD793D26 Series are InGaAs pin photodiodes which has a sensitive area of φ 20µm. PD7XX26 is suitable for receving the light having a wavelength band of 1000 to 1600nm.


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    PD7XX26 PD793D26 PD793D26 1600nm. 1600nm 1300nm 1300nm, 1300nm PIN 1300nm pin photo diodes PDF

    mitsubishi APD

    Abstract: PD8* APD Photo Diodes tia amplifier ghz PD839C4 mitsubishi receiver "photo diodes" APD 1550nm PD839C4 equivalent
    Text: MITSUBISHI PHOTO DIODES PD839C4 InGaAs AVALANCHE PHOTO DIODES PD839C4 Feature DESCRIPTION PD839C4 is a φ35µm InGaAs Avalanche Photodiodes APD with Trans Impedance Amplifier(TIA). This APD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical


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    PD839C4 PD839C4 10MHz-1 488G/s, 180um mitsubishi APD PD8* APD Photo Diodes tia amplifier ghz mitsubishi receiver "photo diodes" APD 1550nm PD839C4 equivalent PDF

    Alumina submount

    Abstract: PD7087 PD708C7 PD7937 PD793D7 mitsubishi receiver
    Text: MITSUBISHI PHOTO DIODES PD7XX7 SERIES InGaAs PIN PHOTO DIODES PD7087, PD708C7, PD7937, PD793D7 Feature DESCRIPTION PD7XX7 Series are InGaAs pin photodiodes which has a sensitive area of φ 40µm. PD7XX7 is suitable for receving the light having a wavelength band of 1000 to 1600nm.


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    PD7087, PD708C7, PD7937, PD793D7 1600nm. 1600nm PD708C7) PD708C7 PD7937 Alumina submount PD7087 PD708C7 PD7937 PD793D7 mitsubishi receiver PDF

    mitsubishi APD

    Abstract: PD8* APD TIA AGC application note Photo Diodes PD839A4 photo amplifier tia amplifier ghz mitsubishi receiver "photo diodes" APD 1550nm
    Text: MITSUBISHI PHOTO DIODES PD839A4 InGaAs AVALANCHE PHOTO DIODES PD839A4 Feature DESCRIPTION PD839A4 is a φ35µm InGaAs Avalanche Photodiodes APD with Trans Impedance Amplifier(TIA). This APD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical


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    PD839A4 PD839A4 10MHz-1 488G/s, mitsubishi APD PD8* APD TIA AGC application note Photo Diodes photo amplifier tia amplifier ghz mitsubishi receiver "photo diodes" APD 1550nm PDF

    ia2c

    Abstract: No abstract text available
    Text: MITSUBISHI InGaAs PHOTODIODES PD8XX1 SERIES FOR OPTICAL COMMUNICATION MITSUBISHI DISCRETE SC TYPE NAME DQIMSM? fi H M I T S " 31E » \ -0 7 • ‘T ' M P D 8001, PD 8931 DESCRIPTION FEATURES The PD8XXÎ series are InGaAs avalanche photodiodes de­ •


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    001425G 55/im ia2c PDF

    PD7005

    Abstract: PD7035 PD7935
    Text: MITSUBISHI InGaAs PHOTODIODES P D 7X X 5 MITSUBISHI DISCRETE SC tj24ciô2ci G o m a a s s h i m i t s h 31E D SERIES FOR OPTICA L COMMUNICATION " T TYPE NAME - q i - c r ? PD7005, PD7035, PD7935 FEATURES DESCRIPTION M itsubishi PD7XX5 series are InGaAs photodiodes de­


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    tj24clà PD7005, PD7035, PD7935 1300nm) 00mEM2 1300nm, 200ps/dlv PD7005 PD7035 PD7935 PDF

    Untitled

    Abstract: No abstract text available
    Text: M IT S U B IS H I InGaAs PHOTODIODES P D 7X X 5 MITSUBISHI DISCRETE SC 31E B ì> SERIES tj24cl ñ 2 ci GGIMEBR ^ HIMITS FOR O P T IC A L C O M M U N IC A TIO N j "T-m-cn TYPE NAME PD7005, PD7035, PD7935 DESCRIPTION FEATURES Mitsubishi PD7XX5 series are InGaAs photodiodes de­


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    tj24cl PD7005, PD7035, PD7935 1600nm 1300nm) 1300nm, PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI InGaAs PHOTODIODES PD7XX6 MITSUBISHI DISCRETE SC 31E D I S E R IE S Q014E43 □ B M I T 5 F O R O P T IC A L C O M M U N IC A T IO N T - 4 1 -D 7 TYPE NAME DESCRIPTION FEATURES The PD 7X X 6 series are InG aAs photodiodes designed to • • High quantum efficiency


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    Q014E43 300/um 0ai424b 1300nm) 1300nm, PDF

    photodiodes mitsubishi

    Abstract: No abstract text available
    Text: blE ]> • GD1 4 7 2 5 MITSUBISHI DISCRETE 7 flfl IMITS MITSUBISHI InGaAs PHOTODIODES PD8XX2 SERIES SC FOR OPTICAL COMMUNICATION TYPE NAME DESCRIPTION PD8XX2 is an FEATURES InGaAs avalanche • High quantum efficiency photodiode suitable fo r receiving the light having a wavelength


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    1600nm. photodiodes mitsubishi PDF

    Untitled

    Abstract: No abstract text available
    Text: bl E D • bEHTflE'ì D014713 Tbb MITS MITSUBISHI DISCRETE SC MITSUBISHI InGaAs PHOTODIODES PD7XX5 SERIES FOR OPTICAL COMMUNICATION TYPE NAME FEATURES DESCRIPTION PD7XX5 is an InGaAs pin photodiode having light receiving diameter o f 80 fi m, w hich a is suitable


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    D014713 1600nm. 1600nm 1300nm) 1300nm, PDF

    mitsubishi ml laser

    Abstract: S1250 n type laser diode
    Text: MITSUBISHI OPTICAL SEMICONDUCTOR DEVICES ORDERING INFORMATION 1. LASER DIODES, PHOTODIODES Device type f ML : Laser diode l^PD : Photodiode * i Wavelength code Package code (2 digits, or, 2 digits + 1 alphabet) Chip series No. * Pin connection 2 /fixed only to the monitor PD»


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    S1250 mitsubishi ml laser S1250 n type laser diode PDF

    Photo Diodes

    Abstract: "photo diodes"
    Text: MITSUBISHI PHOTO DIODES PD7XX13 SERIES InGaAs PIN PHOTO DIODES Feature DESCRIPTION 0 B u it in GaAs Pre-amplifier with AGC function ^Single 5.0 supply voltage for Pre-amplifier ^D ifferential output ^ B a ll lens cap PD7XX8 Series are a 02O|xm InGaAs pin photodiodes


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    PD7XX13 200MHz, 10MHz-1 488G/S Photo Diodes "photo diodes" PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SILICON AVALANCHE PHOTODIODES blE ]> • PD1XX2 SERIES bSHRflST 0014705 TiT » M I T S MITSUBISHI DISCRETE SC FOR OPTICAL COMMUNICATION AND RADAR SYSTEMS TYPE NAME DESCRIPTION FEATURES PD1XX2 is a silicon avalanche photodiode (Si-APD) • High speed response (pulse rise tim e 150ps)


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    150ps) 800GHz) AD1000) PDF

    Untitled

    Abstract: No abstract text available
    Text: b lE » • bSH^fiST üüm?G3 M ITS U B IS H I D1 7 DISCRETE « M IT S MITSUBISHI SILICON Pin PHOTODIODES PD2XX1 SERIES SC FOR OPTICAL COMMUNICATION AND RADAR SYSTEMS TYPE NAME DESCRIPTION FEATURES PD2XX1 is a silicon pin photodiode having a light • High speed response


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    800nm 850nm PD2101 PDF

    Untitled

    Abstract: No abstract text available
    Text: M IT S U B IS H I InGaAs PHOTO DIODES PD8XX2 SERIES FO R O PTICAL. C O M M U N IC A T IO N MITSUBISHI DISCRETE SC TYPE NAME E bSMRôS'ï Q01H2S1 T EIMITS 31E D :"Pm -07 PD3002, PD3932 DESCRIPTION FEATURES The PD 8X X 2 series are InG aAs avalanche photodiodes de­


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    Q01H2S1 PD3002, PD3932 1300nrn PDF

    750NR

    Abstract: AD1000 1000nm ir avalanche photodiodes M025 PD1002 PD1032 10 gb laser diode Silicon apd
    Text: MITSUBISHI SILICON AVALANCHE PHOTODIODES LIE D • b S 4 tìfl2cì 0 a m 7 0 S MITSUBISHI PD1XX2 SERIES TTT « M I T S DISCRETE SC FOR OPTICAL COMMUNICATION AND RADAR SYSTEMS TYPE NAME FEATURES DESCRIPTION PD 1XX2 is a silico n avalanche p h o to d io d e (S i-A P D )


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    PD1002, PD1032 150ps) 800GHz) AD1000) 750NR AD1000 1000nm ir avalanche photodiodes M025 PD1002 PD1032 10 gb laser diode Silicon apd PDF

    30h80

    Abstract: avalanche photodiodes vn09 PD80 PD8932 InGaAs photodiodes mitsubishi high speed
    Text: M IT S U B IS H I InGaAs P H O TO DIO DES PDSXX2 VîS* F O R O PTICAL. C O M M U N IC A T IO N MITSUBISHI DISCRETE SC TYPE NAME S E R IE S 1=24=102^ 0014251 T EIMITS 31E D r^rm-o7 PD3002, PD8932 DESCRIPTION FEATURES The P08XX2 series are InGaAs avalanche photodiodes de­


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    PD8932 rr-m-07 1300nm DQ14ESS 30h80 avalanche photodiodes vn09 PD80 PD8932 InGaAs photodiodes mitsubishi high speed PDF

    avalanche photodiodes

    Abstract: PD8001
    Text: M IT S U B IS H I InGaAs PH O T O DIO DES PDSXX1 SERIES F O R O P T IC A L C O M M U N IC A T IO N MITSUBISHI DISCRETE SC TYPE NAME DQIMSM? fi EHMIT5' 31E D • T '- M l - c r ç P D 8001, PD8931 DESCRIPTION FEATURES The P D 8 X X t series are In G aA s avalanche photodiodes d e ­


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    PD8001, PD8931 55/im avalanche photodiodes PD8001 PDF

    30h80

    Abstract: No abstract text available
    Text: M IT S U B IS H I InGaAs PH O T O DIO DES PD7XX6 SERIES MITSUBISHI DISCRETE SC 31E D I bSM^ÛE^ 0014EM3 □ B M I T 5 FO R O P T IC A L C O M M U N IC A T IO N r-P i4l -vrt TYPE NAME DESCRIPTION FEATURES The P D 7 X X 6 se rie s are In G a A s photodiodes de sign e d to


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    0014EM3 T-q-l-07 300/um 1001300nm) 1300nm, 30h80 PDF