PHOTODIODE VTS Search Results

photodiode VTS

Contextual Info: VTS Process Photodiode VTS_ _80H, 82H, 85H PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity makes them ideal for

Contextual Info: VTS Process Photodiode VTS_ _80H, 82H, 85H PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity makes them ideal for

VTS4085

Abstract: VTS-84 VTS1188 VTS-81 VTS-83 VTS-4085S VTS7080A vactec photodiode 21 187 photodiode VTS VTS-11
Contextual Info: This Material VTS-2 PROCESS LOW CAPACITANCE LARGE AREA PHOTODIODE Copyrighted FEATURES PRODUCT DESCRIPTION By Its Visible to IR spectral range. Response @ 940nm, 0.54 A/VJ, typ. Useable with visible and IR LEDS. 1-2% linearity over 3 to 4 decades. Moderate shunt resistance.

Contextual Info: SbE ]> • BDaObO'i GDDllGS 535 IVCT VTS7080A |~VTS-2 Process Photodiodes T-41-51 E G 8, G VACTEC PACKAGE DIMENSIONS inch mm ( 20.831 .820 PRODUCT DESCRIPTION CASE 16 Large area silicon photodiode mounted in a two lead 1.25" diameter hermetic package. Cathode is common to the

Contextual Info: 5bE D • 3030^0^ □□□1111 83^ « V C T VTS7070A VTS-3 Process Photodiodes E G & 6 VACTEC T - 9 0 -0 1 PACKAGE DIMENSIONS inch mm CASE 16 PRODUCT DESCRIPTION 1.25-HERMETIC PACKAGE CHIP ACTIVE AREA: .431 in2 (278 mm2) Large area planar silicon photodiode in

VTS7080A

Contextual Info: SbE ]> • 3030ijCH Q0011DS S3S ■VCT VTS7080A |~VTS-2 Process Photodiodes E G 8, G T-41-51 VACTEC PACKAGE DIMENSIONS inch mm ( 2 0 .8 3 1 .8 2 0 PRODUCT DESCRIPTION Large area silicon photodiode mounted in a two lead 1.25" diameter hermetic package. Cathode is common to the

Silicon Photocells

Abstract: VTS7070A uv led 365 vactec photodiode 21 187 UV Photodiode Vactec TR 0431 UV source led 220nm photodiode VTS VTS70
Contextual Info: VTS-3 PROCESS SUPER BLUE ENHANCED LARGE AREA PHOTODIODE FEATURES P R O D U C T DESCRIPTION • • • • • • • This series of P on N large area silicon diodes is intended for use in the photovoltaic m ode. These devices have excellent response in the UV region

Contextual Info: BPV23FL VÏSJMY Vishay Telefunken ▼ Silicon PIN Photodiode Description BPV23FL is a high speed and high sensitive PIN photo­ diode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters k p = 950

all type transistor equivalent

Abstract: pin details of photo transistor block diagram circuit diagram for photointerrupter IR block photodiode phototransistor HV photodiode chip silicon Infrared Phototransistor pn junction diode structure high sensitivity reflective photo interrupter ir led PHOTODIODE
Contextual Info: Introduction Detecting devices Photodiode When light is incident on a silicon PN junction, the light generates electron and hole pairs in the silicon crystal. When the energy of the incident light is greater than the silicon energy band gap Eg , the electrons and holes scatter in accordance with the concentration gradient of the

VTS7070A

Abstract: uv photodiode uv led 365
Contextual Info: SbE I VCT D VTS7070A VTS-3 Process Photodiodes E 6 & G VACTEC T - 9 0 -0 1 P A CK A G E D IM EN SIO N S inch mm CASE 16 P R O D U C T D ESCR IP TIO N Large area p lanar silicon photodiode in a tw o lead, “fla t 1 w indow hermetic package. Cath ode is com m on to the

Silicon Photocells

Abstract: vts-14 vactec
Contextual Info: VTS-1 SOLAR PROCESS LARGE AREA PHOTODIODE PROCESS PRODUCT DESCRIPTION FEATURES • • • • • • • V isib le to IR s p e c tra l range. U sea b le w ith visib le a n d IR LEDS. H ig h o p e n c irc u it v o lta g e @ lo w lig h t levels. 1-2% lin e a rity o v e r 3 to 4 decades.

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

Contextual Info: ONET1191V www.ti.com SLLS750A – AUGUST 2006 – REVISED SEPTEMBER 2006 11.3-GBPS DIFFERENTIAL VCSEL DRIVER FEATURES APPLICATIONS • • • • • • • • • • • • • • Up to 11.3-Gbps Operation Two-Wire Digital Interface Digitally Selectable Modulation Current up to

Contextual Info: ONET1191V www.ti.com SLLS750A – AUGUST 2006 – REVISED SEPTEMBER 2006 11.3-GBPS DIFFERENTIAL VCSEL DRIVER FEATURES APPLICATIONS • • • • • • • • • • • • • • Up to 11.3-Gbps Operation Two-Wire Digital Interface Digitally Selectable Modulation Current up to

CIRCUIT OF SMOKE ALARM WITH PHOTODIODE

Abstract: IR LED and photodiode SD4 diode ir led datasheet ir led diode SD4 smoke DETECTOR CIRCUIT DIAGRAM silicon PIN photodiode driver sound horn equivalent transistor 2n3704
Contextual Info: SD4 SD4 Advance Information CMOS Photo-Electric Smoke Detector Integrated Circuit Ordering Information Device Package Order No. SD4 16-Pin Plastic SD4P SD4 SOW-20 SD4WG Features General Description • 6µA – Average standby current ■ Minimum cost of external components

BLM15HG102SN1D

Abstract: s0212 15-V ONET1191V STM-64 P0031-04
Contextual Info: ONET1191V www.ti.com SLLS750A – AUGUST 2006 – REVISED SEPTEMBER 2006 11.3-GBPS DIFFERENTIAL VCSEL DRIVER FEATURES APPLICATIONS • • • • • • • • • • • • • • Up to 11.3-Gbps Operation Two-Wire Digital Interface Digitally Selectable Modulation Current up to

BLM15HG102sn1d

Contextual Info: ONET1191V www.ti.com SLLS750 – AUGUST 2006 11.3-GBPS DIFFERENTIAL VCSEL DRIVER FEATURES APPLICATIONS • • • • • • • • • • • • • • Up to 11.3-Gbps Operation Two-Wire Digital Interface Digitally Selectable Modulation Current up to

BLM15HG102SN1

Abstract: 15-V BLM15HG102SN1D ONET1191V STM-64
Contextual Info: ONET1191V www.ti.com SLLS750A – AUGUST 2006 – REVISED SEPTEMBER 2006 11.3-GBPS DIFFERENTIAL VCSEL DRIVER FEATURES APPLICATIONS • • • • • • • • • • • • • • Up to 11.3-Gbps Operation Two-Wire Digital Interface Digitally Selectable Modulation Current up to

Contextual Info: ONET1191V www.ti.com SLLS750A – AUGUST 2006 – REVISED SEPTEMBER 2006 11.3-GBPS DIFFERENTIAL VCSEL DRIVER FEATURES APPLICATIONS • • • • • • • • • • • • • • Up to 11.3-Gbps Operation Two-Wire Digital Interface Digitally Selectable Modulation Current up to

Contextual Info: ONET1191V www.ti.com SLLS750A – AUGUST 2006 – REVISED SEPTEMBER 2006 11.3-GBPS DIFFERENTIAL VCSEL DRIVER FEATURES APPLICATIONS • • • • • • • • • • • • • • Up to 11.3-Gbps Operation Two-Wire Digital Interface Digitally Selectable Modulation Current up to

sd2p smoke detector

Abstract: equivalent transistor 2n3704 LED monitor circuit diagram smoke alarm circuit CIRCUIT OF SMOKE ALARM WITH PHOTODIODE SD2P infrared photoelectric chamber smoke detector waveforms photodiode smoke alarm detector
Contextual Info: SD2 CMOS Photo-Electric Smoke Detector Integrated Circuit Ordering Information General Description Package Options Not recommended for new designs. 16-Pin Plastic Dip SOW-20 SD2P SD2WG This low power CMOS circuit is intended for use in a pulsed LED/ silicon cell smoke detector system. It is designed for use in low

CIRCUIT OF SMOKE ALARM WITH PHOTODIODE

Abstract: air horn IR LED and photodiode LED monitor circuit diagram smoke DETECTOR CIRCUIT DIAGRAM SD4 diode diode led ir equivalent transistor 2n3704 ir led datasheet IR LED infrared led
Contextual Info: SD4 CMOS Photo-Electric Smoke Detector Integrated Circuit Ordering Information Package Options 16-Pin Plastic SOW-20 SD4P SD4WG Features General Description • 6µA average standby current ■ Minimum cost of external components ■ 1mV sensitivity ■ 8 to 1 increase of sample rate when smoke detected

Contextual Info: ONET1191V www.ti.com SLLS750A – AUGUST 2006 – REVISED SEPTEMBER 2006 11.3-GBPS DIFFERENTIAL VCSEL DRIVER FEATURES APPLICATIONS • • • • • • • • • • • • • • Up to 11.3-Gbps Operation Two-Wire Digital Interface Digitally Selectable Modulation Current up to

Contextual Info: ONET1191V www.ti.com SLLS750A – AUGUST 2006 – REVISED SEPTEMBER 2006 11.3-GBPS DIFFERENTIAL VCSEL DRIVER FEATURES APPLICATIONS • • • • • • • • • • • • • • Up to 11.3-Gbps Operation Two-Wire Digital Interface Digitally Selectable Modulation Current up to