photodiode VTS
Abstract: No abstract text available
Text: VTS Process Photodiode VTS_ _80H, 82H, 85H PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity makes them ideal for
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: VTS Process Photodiode VTS_ _80H, 82H, 85H PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity makes them ideal for
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: ONET1191V www.ti.com SLLS750A – AUGUST 2006 – REVISED SEPTEMBER 2006 11.3-GBPS DIFFERENTIAL VCSEL DRIVER FEATURES APPLICATIONS • • • • • • • • • • • • • • Up to 11.3-Gbps Operation Two-Wire Digital Interface Digitally Selectable Modulation Current up to
|
Original
|
PDF
|
ONET1191V
SLLS750A
20-Pin
10-Gigabit
|
Untitled
Abstract: No abstract text available
Text: ONET1191V www.ti.com SLLS750A – AUGUST 2006 – REVISED SEPTEMBER 2006 11.3-GBPS DIFFERENTIAL VCSEL DRIVER FEATURES APPLICATIONS • • • • • • • • • • • • • • Up to 11.3-Gbps Operation Two-Wire Digital Interface Digitally Selectable Modulation Current up to
|
Original
|
PDF
|
ONET1191V
SLLS750A
20-Pin
10-Gigabit
OC-192/SDH
STM-64
|
CIRCUIT OF SMOKE ALARM WITH PHOTODIODE
Abstract: equivalent transistor 2n3704 IR LED and photodiode electro magnetic detector LED monitor circuit diagram smoke DETECTOR CIRCUIT DIAGRAM ul217 SD4 diode VTS4085
Text: SD4 CMOS Photo-Electric Smoke Detector Integrated Circuit Ordering Information Package Options 16-Pin Plastic SOW-20 SD4P SD4WG Features General Description • 6µA average standby current Not recommended for new designs. ■ Minimum cost of external components
|
Original
|
PDF
|
16-Pin
SOW-20
CIRCUIT OF SMOKE ALARM WITH PHOTODIODE
equivalent transistor 2n3704
IR LED and photodiode
electro magnetic detector
LED monitor circuit diagram
smoke DETECTOR CIRCUIT DIAGRAM
ul217
SD4 diode
VTS4085
|
CIRCUIT OF SMOKE ALARM WITH PHOTODIODE
Abstract: IR LED and photodiode SD4 diode ir led datasheet ir led diode SD4 smoke DETECTOR CIRCUIT DIAGRAM silicon PIN photodiode driver sound horn equivalent transistor 2n3704
Text: SD4 SD4 Advance Information CMOS Photo-Electric Smoke Detector Integrated Circuit Ordering Information Device Package Order No. SD4 16-Pin Plastic SD4P SD4 SOW-20 SD4WG Features General Description • 6µA – Average standby current ■ Minimum cost of external components
|
Original
|
PDF
|
16-Pin
SOW-20
20-pin
CIRCUIT OF SMOKE ALARM WITH PHOTODIODE
IR LED and photodiode
SD4 diode
ir led datasheet
ir led
diode SD4
smoke DETECTOR CIRCUIT DIAGRAM
silicon PIN photodiode driver
sound horn
equivalent transistor 2n3704
|
BLM15HG102SN1D
Abstract: s0212 15-V ONET1191V STM-64 P0031-04
Text: ONET1191V www.ti.com SLLS750A – AUGUST 2006 – REVISED SEPTEMBER 2006 11.3-GBPS DIFFERENTIAL VCSEL DRIVER FEATURES APPLICATIONS • • • • • • • • • • • • • • Up to 11.3-Gbps Operation Two-Wire Digital Interface Digitally Selectable Modulation Current up to
|
Original
|
PDF
|
ONET1191V
SLLS750A
20-Pin
10-Gigabit
BLM15HG102SN1D
s0212
15-V
ONET1191V
STM-64
P0031-04
|
BLM15HG102sn1d
Abstract: No abstract text available
Text: ONET1191V www.ti.com SLLS750 – AUGUST 2006 11.3-GBPS DIFFERENTIAL VCSEL DRIVER FEATURES APPLICATIONS • • • • • • • • • • • • • • Up to 11.3-Gbps Operation Two-Wire Digital Interface Digitally Selectable Modulation Current up to
|
Original
|
PDF
|
ONET1191V
SLLS750
20-Pin
10-Gigabit
OC-192/SDH
STM-64
BLM15HG102sn1d
|
BLM15HG102SN1
Abstract: 15-V BLM15HG102SN1D ONET1191V STM-64
Text: ONET1191V www.ti.com SLLS750A – AUGUST 2006 – REVISED SEPTEMBER 2006 11.3-GBPS DIFFERENTIAL VCSEL DRIVER FEATURES APPLICATIONS • • • • • • • • • • • • • • Up to 11.3-Gbps Operation Two-Wire Digital Interface Digitally Selectable Modulation Current up to
|
Original
|
PDF
|
ONET1191V
SLLS750A
20-Pin
10-Gigabit
BLM15HG102SN1
15-V
BLM15HG102SN1D
ONET1191V
STM-64
|
Untitled
Abstract: No abstract text available
Text: ONET1191V www.ti.com SLLS750A – AUGUST 2006 – REVISED SEPTEMBER 2006 11.3-GBPS DIFFERENTIAL VCSEL DRIVER FEATURES APPLICATIONS • • • • • • • • • • • • • • Up to 11.3-Gbps Operation Two-Wire Digital Interface Digitally Selectable Modulation Current up to
|
Original
|
PDF
|
ONET1191V
SLLS750A
20-Pin
10-Gigabit
OC-192/SDH
STM-64
|
Untitled
Abstract: No abstract text available
Text: ONET1191V www.ti.com SLLS750A – AUGUST 2006 – REVISED SEPTEMBER 2006 11.3-GBPS DIFFERENTIAL VCSEL DRIVER FEATURES APPLICATIONS • • • • • • • • • • • • • • Up to 11.3-Gbps Operation Two-Wire Digital Interface Digitally Selectable Modulation Current up to
|
Original
|
PDF
|
ONET1191V
SLLS750A
20-Pin
10-Gigabit
OC-192/SDH
STM-64
|
sd2p smoke detector
Abstract: equivalent transistor 2n3704 LED monitor circuit diagram smoke alarm circuit CIRCUIT OF SMOKE ALARM WITH PHOTODIODE SD2P infrared photoelectric chamber smoke detector waveforms photodiode smoke alarm detector
Text: SD2 CMOS Photo-Electric Smoke Detector Integrated Circuit Ordering Information General Description Package Options Not recommended for new designs. 16-Pin Plastic Dip SOW-20 SD2P SD2WG This low power CMOS circuit is intended for use in a pulsed LED/ silicon cell smoke detector system. It is designed for use in low
|
Original
|
PDF
|
16-Pin
SOW-20
UL217
sd2p smoke detector
equivalent transistor 2n3704
LED monitor circuit diagram
smoke alarm circuit
CIRCUIT OF SMOKE ALARM WITH PHOTODIODE
SD2P
infrared photoelectric chamber
smoke detector waveforms
photodiode smoke alarm detector
|
CIRCUIT OF SMOKE ALARM WITH PHOTODIODE
Abstract: air horn IR LED and photodiode LED monitor circuit diagram smoke DETECTOR CIRCUIT DIAGRAM SD4 diode diode led ir equivalent transistor 2n3704 ir led datasheet IR LED infrared led
Text: SD4 CMOS Photo-Electric Smoke Detector Integrated Circuit Ordering Information Package Options 16-Pin Plastic SOW-20 SD4P SD4WG Features General Description • 6µA average standby current ■ Minimum cost of external components ■ 1mV sensitivity ■ 8 to 1 increase of sample rate when smoke detected
|
Original
|
PDF
|
16-Pin
SOW-20
CIRCUIT OF SMOKE ALARM WITH PHOTODIODE
air horn
IR LED and photodiode
LED monitor circuit diagram
smoke DETECTOR CIRCUIT DIAGRAM
SD4 diode
diode led ir
equivalent transistor 2n3704
ir led datasheet
IR LED infrared led
|
Untitled
Abstract: No abstract text available
Text: ONET1191V www.ti.com SLLS750A – AUGUST 2006 – REVISED SEPTEMBER 2006 11.3-GBPS DIFFERENTIAL VCSEL DRIVER FEATURES APPLICATIONS • • • • • • • • • • • • • • Up to 11.3-Gbps Operation Two-Wire Digital Interface Digitally Selectable Modulation Current up to
|
Original
|
PDF
|
ONET1191V
SLLS750A
20-Pin
10-Gigabit
OC-192/SDH
STM-64
|
|
|
VTS4085
Abstract: VTS-84 VTS1188 VTS-81 VTS-83 VTS-4085S VTS7080A vactec photodiode 21 187 photodiode VTS VTS-11
Text: This Material VTS-2 PROCESS LOW CAPACITANCE LARGE AREA PHOTODIODE Copyrighted FEATURES PRODUCT DESCRIPTION By Its Visible to IR spectral range. Response @ 940nm, 0.54 A/VJ, typ. Useable with visible and IR LEDS. 1-2% linearity over 3 to 4 decades. Moderate shunt resistance.
|
OCR Scan
|
PDF
|
940nm,
VTS1188L
I/TS4085H
VTS4085S
VTS608S/
10O3V
VTS7080A
VTS4085
VTS-84
VTS1188
VTS-81
VTS-83
VTS-4085S
vactec photodiode 21 187
photodiode VTS
VTS-11
|
Untitled
Abstract: No abstract text available
Text: SbE ]> • BDaObO'i GDDllGS 535 IVCT VTS7080A |~VTS-2 Process Photodiodes T-41-51 E G 8, G VACTEC PACKAGE DIMENSIONS inch mm ( 20.831 .820 PRODUCT DESCRIPTION CASE 16 Large area silicon photodiode mounted in a two lead 1.25" diameter hermetic package. Cathode is common to the
|
OCR Scan
|
PDF
|
VTS7080A
T-41-51
100/iW
|
Untitled
Abstract: No abstract text available
Text: 5bE D • 3030^0^ □□□1111 83^ « V C T VTS7070A VTS-3 Process Photodiodes E G & 6 VACTEC T - 9 0 -0 1 PACKAGE DIMENSIONS inch mm CASE 16 PRODUCT DESCRIPTION 1.25-HERMETIC PACKAGE CHIP ACTIVE AREA: .431 in2 (278 mm2) Large area planar silicon photodiode in
|
OCR Scan
|
PDF
|
VTS7070A
25-HERMETIC
|
VTS7080A
Abstract: No abstract text available
Text: SbE ]> • 3030ijCH Q0011DS S3S ■VCT VTS7080A |~VTS-2 Process Photodiodes E G 8, G T-41-51 VACTEC PACKAGE DIMENSIONS inch mm ( 2 0 .8 3 1 .8 2 0 PRODUCT DESCRIPTION Large area silicon photodiode mounted in a two lead 1.25" diameter hermetic package. Cathode is common to the
|
OCR Scan
|
PDF
|
3030bCH
00011DS
VTS7080A
T-41-51
VTS7080yp.
VTS7080A
|
Silicon Photocells
Abstract: VTS7070A uv led 365 vactec photodiode 21 187 UV Photodiode Vactec TR 0431 UV source led 220nm photodiode VTS VTS70
Text: VTS-3 PROCESS SUPER BLUE ENHANCED LARGE AREA PHOTODIODE FEATURES P R O D U C T DESCRIPTION • • • • • • • This series of P on N large area silicon diodes is intended for use in the photovoltaic m ode. These devices have excellent response in the UV region
|
OCR Scan
|
PDF
|
340nm,
633nm,
800nm
220nm
VTS-74
VTS-75
VTS-76
VTS--77
VTS7070A|
Silicon Photocells
VTS7070A
uv led 365
vactec photodiode 21 187
UV Photodiode
Vactec
TR 0431
UV source led 220nm
photodiode VTS
VTS70
|
Untitled
Abstract: No abstract text available
Text: BPV23FL VÏSJMY Vishay Telefunken ▼ Silicon PIN Photodiode Description BPV23FL is a high speed and high sensitive PIN photo diode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters k p = 950
|
OCR Scan
|
PDF
|
BPV23FL
BPV23FL
D-74025
17-Sep-98
|
all type transistor equivalent
Abstract: pin details of photo transistor block diagram circuit diagram for photointerrupter IR block photodiode phototransistor HV photodiode chip silicon Infrared Phototransistor pn junction diode structure high sensitivity reflective photo interrupter ir led PHOTODIODE
Text: Introduction Detecting devices Photodiode When light is incident on a silicon PN junction, the light generates electron and hole pairs in the silicon crystal. When the energy of the incident light is greater than the silicon energy band gap Eg , the electrons and holes scatter in accordance with the concentration gradient of the
|
OCR Scan
|
PDF
|
|
VTS7070A
Abstract: uv photodiode uv led 365
Text: SbE I VCT D VTS7070A VTS-3 Process Photodiodes E 6 & G VACTEC T - 9 0 -0 1 P A CK A G E D IM EN SIO N S inch mm CASE 16 P R O D U C T D ESCR IP TIO N Large area p lanar silicon photodiode in a tw o lead, “fla t 1 w indow hermetic package. Cath ode is com m on to the
|
OCR Scan
|
PDF
|
303DtiDc1
VTS7070A
T-90-01
VTS7070A
uv photodiode
uv led 365
|
Silicon Photocells
Abstract: vts-14 vactec
Text: VTS-1 SOLAR PROCESS LARGE AREA PHOTODIODE PROCESS PRODUCT DESCRIPTION FEATURES • • • • • • • V isib le to IR s p e c tra l range. U sea b le w ith visib le a n d IR LEDS. H ig h o p e n c irc u it v o lta g e @ lo w lig h t levels. 1-2% lin e a rity o v e r 3 to 4 decades.
|
OCR Scan
|
PDF
|
VTS-64
VTS-66
VTS-67
Silicon Photocells
vts-14
vactec
|
H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
|
OCR Scan
|
PDF
|
1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
2600-70XX
2N5777-80
H0A0872-n55
H0A1405-1
H0A0865-L51
h0a1405
HOA708-1
HOA9
til78 phototransistor
MOC70T3
ir diode TIL38
H0A1874-12
|
