Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PHOTODIODE RADIATION Search Results

    PHOTODIODE RADIATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    IS2-1009EH-Q Renesas Electronics Corporation Radiation Hardened 2.5V Reference Visit Renesas Electronics Corporation
    IS2-1009RH-8 Renesas Electronics Corporation Radiation Hardened 2.5V Reference Visit Renesas Electronics Corporation
    ISYE-1009RH-Q Renesas Electronics Corporation Radiation Hardened 2.5V Reference Visit Renesas Electronics Corporation
    ISYE-1009EH-Q Renesas Electronics Corporation Radiation Hardened 2.5V Reference Visit Renesas Electronics Corporation
    IS0-1009EH-Q Renesas Electronics Corporation Radiation Hardened 2.5V Reference Visit Renesas Electronics Corporation

    PHOTODIODE RADIATION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si photodiode S10359 Highly reliable, quadrant photodiode for ArF excimer laser monitor S10359 is a Si photodiode with sensitivity extending into the VUV vacuum ultraviolet region and provides high reliability for VUV detection. S10359 is a variant (quadrant device) of the previously marketed S9683 photodiode. Its hermetically sealed package ensures


    Original
    PDF S10359 S10359 S9683 SE-171 KSPD1076E03

    PIN photodiode 420 nm

    Abstract: S3590-18 S3590-08 S3590-09 S3590-19 GSO 69
    Text: PHOTODIODE Si PIN photodiode S3590-18/-19 Large area Si PIN photodiode for scintillation counting Features Applications l Suitable for coupling with blue scintillator LSO, GSO, etc. l Radiation detection (PET, etc.) l Internal quantum efficiency: 100 % (λ=420 nm)


    Original
    PDF S3590-18/-19 S3590-19: SE-171 KPIN1039E01 PIN photodiode 420 nm S3590-18 S3590-08 S3590-09 S3590-19 GSO 69

    GSO 69

    Abstract: No abstract text available
    Text: PHOTODIODE Si PIN photodiode S3590-18/-19 Large area Si PIN photodiode for scintillation counting Features Applications l Suitable for coupling with blue scintillator LSO, GSO, etc. l Radiation detection (PET, etc.) l Internal quantum efficiency: 100 % (λ=420 nm)


    Original
    PDF S3590-18/-19 S3590-19: SE-171 KPIN1039E01 GSO 69

    S3590-08

    Abstract: S3590 S3590-09 S3590-18 S3590-19 ceramic scintillator PIN photodiode 420 nm
    Text: PHOTODIODE Si PIN photodiode S3590-18/-19 Large area Si PIN photodiode for scintillation counting Features Applications l Suitable for coupling with blue scintillator LSO, GSO, etc. l Radiation detection (PET, etc.) l Internal quantum efficiency: 100 % (λ=420 nm)


    Original
    PDF S3590-18/-19 S3590-19: SE-171 KPIN1039E01 S3590-08 S3590 S3590-09 S3590-18 S3590-19 ceramic scintillator PIN photodiode 420 nm

    Untitled

    Abstract: No abstract text available
    Text: Si PIN photodiode S12271 Large area, high-speed PIN photodiode for UV to near IR photometry The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the UV region and is suitable for optical power


    Original
    PDF S12271 KPIN1085E02

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si photodiode S9682, S9683 Highly reliable photodiode for VUV detection S9682 and S9683 are Si photodiodes specifically designed to detect VUV vacuum ultraviolet radiation with high reliability. These photodiodes are hermetically sealed in a metal package with a quartz window. There is no outgassing from the inside of the package, eliminating the cause of


    Original
    PDF S9682, S9683 S9682 S9683 S9682: S9683: SE-171 KSPD1069E02

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si photodiode S9682, S9683 Highly reliable photodiode for VUV detection S9682 and S9683 are Si photodiodes specifically designed to detect VUV vacuum ultraviolet radiation with high reliability. These photodiodes are hermetically sealed in a metal package with a quartz window. There is no outgassing from the inside of the package, eliminating the cause of


    Original
    PDF S9682, S9683 S9682 S9683 S9682: S9683: SE-171 KSPD1069E03

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si photodiode S9682, S9683 Highly reliable photodiode for VUV detection S9682 and S9683 are Si photodiodes specifically designed to detect VUV vacuum ultraviolet radiation with high reliability. These photodiodes are hermetically sealed in a metal package with a quartz window. There is no outgassing from the inside of the package, eliminating the cause of


    Original
    PDF S9682, S9683 S9682 S9683 S9682: S9683: SE-171 KSPD1069E02

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si photodiode S9682, S9683 Highly reliable photodiode for VUV detection S9682 and S9683 are Si photodiodes specifically designed to detect VUV vacuum ultraviolet radiation with high reliability. These photodiodes are hermetically sealed in a metal package with a quartz window. There is no outgassing from the inside of the package, eliminating the cause of


    Original
    PDF S9682, S9683 S9682 S9683 S9682: S9683: SE-171 KSPD1069E03

    S9682

    Abstract: S9683 SE-171
    Text: PHOTODIODE Si photodiode S9682, S9683 Highly reliable photodiode for VUV detection S9682 and S9683 are Si photodiodes specifically designed to detect VUV vacuum ultraviolet radiation with high reliability. These photodiodes are hermetically sealed in a metal package with a quartz window. There is no outgassing from the inside of the package, eliminating the cause of


    Original
    PDF S9682, S9683 S9682 S9683 S9682: S9683: SE-171 KSPD1069E02

    S10045

    Abstract: violet laser diode chip
    Text: Patent Pending PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its


    Original
    PDF S10044 S10044 S5106) S10045) SE-171 KPIN1076E02 S10045 violet laser diode chip

    Untitled

    Abstract: No abstract text available
    Text: Patent Pending PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its


    Original
    PDF S10044 S10044 S5106) S10045) SE-171 KPIN1076E02

    far uv photodiode

    Abstract: No abstract text available
    Text: PHOTODIODE Si PIN photodiode S1722-02 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 is a high-speed Si PIN photodiode having a large active area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the far UV region and is suitable for optical power meters.


    Original
    PDF S1722-02 S1722-02 SE-171 KPIN1045E06 far uv photodiode

    far uv photodiode

    Abstract: Radiation Detector
    Text: PHOTODIODE Si PIN photodiode S1722-02 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 is a high-speed Si PIN photodiode having a large active area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the far UV region and is suitable for optical power meters.


    Original
    PDF S1722-02 S1722-02 SE-171 KPIN1045E04 far uv photodiode Radiation Detector

    S268P

    Abstract: No abstract text available
    Text: S268P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant


    Original
    PDF S268P S268P D-74025 15-Jul-96

    CD 8403

    Abstract: S268P
    Text: TELEFUNKEN Semiconductors S 268 P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides


    Original
    PDF S268P D-74025 CD 8403

    Untitled

    Abstract: No abstract text available
    Text: TEMD5020 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5020 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 4.4 mm2 sensitive area, detecting visible and near infrared radiation.


    Original
    PDF TEMD5020 TEMD5020 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/EC 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: TEMD5020 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5020 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 4.4 mm2 sensitive area, detecting visible and near infrared radiation.


    Original
    PDF TEMD5020 TEMD5020 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/EC 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: TEMD5010 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5010 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 7.5 mm2 sensitive area, detecting visible and near infrared radiation.


    Original
    PDF TEMD5010 TEMD5010 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/EC 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: BPV10 Vishay Semiconductors Silicon PIN Photodiode Description BPV10 is a very high speed and high sensitive PIN photodiode in a standard T-1¾ plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. Features


    Original
    PDF BPV10 BPV10 2002/95/EC 2002/96/EC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: TEMD5010 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5010 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 7.5 mm2 sensitive area, detecting visible and near infrared radiation.


    Original
    PDF TEMD5010 TEMD5010 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/EC 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: TEMD5020 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5020 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 5.7 mm2 sensitive area, detecting visible and near infrared radiation.


    Original
    PDF TEMD5020 TEMD5020 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/EC D-74025 08-Mar-05

    C30919E

    Abstract: avalanche photodiode bias photodiode amplifier rise time avalanche photodiode
    Text: JJ^EG sG CANADA LTD. Optoelectronics Division Formerly ItGJl Effective January 1,1991 tro :ics Photodiode C30919E DATA SHEET U Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module


    OCR Scan
    PDF C30919E 92LS-58S1 C30919E avalanche photodiode bias photodiode amplifier rise time avalanche photodiode

    BPX92

    Abstract: No abstract text available
    Text: SIEMENS BPX92 SILICON PHOTODIODE FEATURES * Silicon Planar Photodiode * Transparent Plastic Case * 0.2* 5.08 mm Lead Spacing * Low D ark Current, 1 nA Maximum Ratings DESCRIPTION The BPX 92 is a silicon planar photodiode in a transparent plastic package. Its terminals


    OCR Scan
    PDF BPX92 BPX92